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2024

Yang, Cheng and Adam, Christian and Götschel, Sebastian

Complex Near-Field Measurement Using On-The-Fly Scan with In-phase and Quadrature Demodulation

In Tagungsband "2024 15th German Microwave Conference (GeMiC)", 2024, p. 181-184
Duisburg, Germany, 2024

Abstract:
Recently, a new near-field measurement technique based on on-the-fly (OTF) scanning and a Hilbert transform (HT) was proposed, allowing for rapid phase retrieval using a single probe. However, because of the required Nyquist rate sampling, this method encounters challenges related to costly data acquisition, storage, and processing demands, thereby restricting its use at MHz and GHz frequencies. In this paper a novel method is proposed, which addresses these issues by introducing in-phase and quadrature (IQ) demodulation in place of the HT. Its inherent frequency down conversion of the measured signal enables sampling at a significantly lower rate. To demonstrate the effectiveness of the proposed method, it is employed in a near-field scanner to measure the magnetic fields of two distinct devices under test: a wireless power transmitter and a microstrip line, operating at 125 kHz and 1 GHz, respectively. Measurement results, compared to conventional field measurement approaches, show a good correlation, affirming the suitability of this fast and cost-effective solution for antennas, and RF systems.

BibTeX:
@inproceedings{yang_otf-scan-iq-demod_2024,
author = {Yang and Cheng and Adam and Christian and G{\"o}tschel and Sebastian},
title = {{C}omplex {N}ear-{F}ield {M}easurement {U}sing {O}n-{T}he-{F}ly {S}can with {I}n-phase and {Q}uadrature {D}emodulation},
year = {2024},
month = {mar},
booktitle = {2024 15th German Microwave Conference (GeMiC)},
note = {Duisburg, Germany, 2024},
pages = {181-184} }

[Abstract] [BibTeX] [DOI]

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2023

Yang, Cheng and Adam, Christian and Götschel, Sebastian

Single-probe Near-field Phase Retrieval using On-The-Fly Scan and Hilbert Transform

In Tagungsband "2023 International Symposium on Electromagnetic Compatibility – EMC Europe", 2023, p. 1--6
ISSN: 2325-0364

Abstract:
A novel near-field measurement method is proposed for fast phase retrieval using a single probe. The method is based on a new understanding of the on-the-fly (OTF) scan process as a spatio-temporal sampling operation of near-field responses. As a result, the near-field measurement is interpreted as a signal modulation of a source signal and a variable spatio-temporal function defined by the field responses and the motion of the probe. To retrieve the complex field responses, the Hilbert Transform (HT) is utilized for envelope and phase demodulation of signals recorded by an oscilloscope. To demonstrate the proof of concept, both numerical and experimental examples are provided with a detailed description of the method implementation. Measurement-to-measurement correlations at 125 kHz are conducted using a six-axis industry robot with multiple probes and instruments, showing its efficiency, effectiveness, and flexibility. Compared to conventional near-field measurement methods, the proposed method allows 90% reduction of measurement time and achieves a relative accuracy of phase retrieval above 96% with a simplified measurement setup, opening up new opportunities for near-field measurement applications.

BibTeX:
@inproceedings{yang_single-probe_2023,
author = {Yang and Cheng and Adam and Christian and G{\"o}tschel and Sebastian},
title = {{S}ingle-probe {N}ear-field {P}hase {R}etrieval using {O}n-{T}he-{F}ly {S}can and {H}ilbert {T}ransform},
year = {2023},
month = {09},
booktitle = {2023 International Symposium on Electromagnetic Compatibility – EMC Europe},
note = {ISSN: 2325-0364},
pages = {1--6} }

[Abstract] [BibTeX] [DOI]
Singer, Julian A. and Stramm, Till and Fasel, Jens and Schween, Oliver and Gelaeschus, Anton and Bahr, Andreas and Kuhl, Matthias

Flexible Polymer Optical Waveguides for Integrated Optogenetic Brain Implants

In Tagungsband "2023 IEEE 36th International Conference on Micro Electro Mechanical Systems Conference (MEMS)", 2023
2023 IEEE 36th International Conference on Micro Electro Mechanical Systems Conference (MEMS)

Abstract:
This paper presents a manufacturing process for flexible optical waveguides made of biocompatible polydimethylsiloxane (PDMS) to be attached to future optogenetic implants. Based on a complementary metal-oxide-semiconductor (CMOS) application-specific integrated circuit (ASIC), the system uses integrated single photon avalanche diodes (SPADs) as sensors for fluorescence imaging (FI) and post-CMOS micro light-emitting diodes (µLEDs) for stimulation [1]. Attaching fibers to SPADs and µLEDs to collect and distribute light from and to deeper brain layers can unfold previously unachieved medical applications. Two technologies for biocompatible waveguide manufacturing are presented: thin-film and molding. Such a combination of integrated bidirectional implantable ASICs with custom waveguide manufacturing is not limited to medical scenarios but opens up a broad field of applications.

BibTeX:
@inproceedings{mems23singer,
author = {Singer and Julian A. and Stramm and Till and Fasel and Jens and Schween and Oliver and Gelaeschus and Anton and Bahr and Andreas and Kuhl and Matthias},
title = {{F}lexible {P}olymer {O}ptical {W}aveguides for {I}ntegrated {O}ptogenetic {B}rain {I}mplants},
year = {2023},
booktitle = {2023 IEEE 36th International Conference on Micro Electro Mechanical Systems Conference (MEMS)},
note = {2023 IEEE 36th International Conference on Micro Electro Mechanical Systems Conference (MEMS)} }

[Abstract] [BibTeX]
Kim Allinger, Matthias Kuhl

A closed-loop 12bit CMOS-integrated stress sensor system with 4bit adjustable sensitivity from 178-11kPa/LSB at up to 22.5kSa/s and 5bit dynamic range adjustment

In Tagungsband "2023 IEEE International Solid-State Circuits Conference (ISSCC)", 2023
February 19-23, 2023 San Francisco, CA

Abstract:

BibTeX:
@inproceedings{Kim_ISSCC_2023,
author = {Kim Allinger and Matthias Kuhl},
title = {{A} closed-loop 12bit {C}{M}{O}{S}-integrated stress sensor system with 4bit adjustable sensitivity from 178-11k{P}a/{L}{S}{B} at up to 22.5k{S}a/s and 5bit dynamic range adjustment},
year = {2023},
booktitle = {2023 IEEE International Solid-State Circuits Conference (ISSCC)},
note = {February 19-23, 2023 San Francisco, CA} }

[BibTeX]
Mohammad Sadeghi, Eric Elzenheimer, Henrik Wolframm, Johan Arbustini, Angeles De la Cruz-García, Christine Selhuber-Unkel, Andreas Bahr, Michael Höft, Gerhard Schmidt, Franz Faupel

Quantitative Evaluation of Magnetic Nanoparticles for Bio-imaging by Magnetoelectric Thin-Film Sensor

In Tagungsband "57th DGBMT Annual Conference on Biomedical Engineering", 2023
26.-28.09.2023, Duisburg, Germany (accepted)

Abstract:

BibTeX:
@inproceedings{Bahr2023,
author = {Mohammad Sadeghi and Eric Elzenheimer and Henrik Wolframm and Johan Arbustini and Angeles De la Cruz-García and Christine Selhuber-Unkel and Andreas Bahr and Michael H{\"o}ft and Gerhard Schmidt and Franz Faupel},
title = {{Q}uantitative {E}valuation of {M}agnetic {N}anoparticles for {B}io-imaging by {M}agnetoelectric {T}hin-{F}ilm {S}ensor},
year = {2023},
booktitle = {57th DGBMT Annual Conference on Biomedical Engineering},
note = {26.-28.09.2023, Duisburg, Germany (accepted)} }

[BibTeX]
MD Wasif Absar, Anton Gelaeschus, Julian Singer, Andreas Bahr

Ultra-Low Frequency Digital Controlled Oscillator using CMOS Thyristor Based Delay Elements

In Tagungsband "Analog Workshop 2023", 2023
Analog Workshop, München, 2023

Abstract:

BibTeX:
@inproceedings{Paper:Absar:2023,
author = {MD Wasif Absar and Anton Gelaeschus and Julian Singer and Andreas Bahr},
title = {{U}ltra-{L}ow {F}requency {D}igital {C}ontrolled {O}scillator using {C}{M}{O}{S} {T}hyristor {B}ased {D}elay {E}lements},
year = {2023},
booktitle = {Analog Workshop 2023},
note = {Analog Workshop, M{\"u}nchen, 2023} }

[BibTeX]

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2022

Barth, Tobias and Münch, Matthias and Seide, Klaus and Adam, Christian and Krautschneider, Wolfgang and Schulz, Arndt-Peter

Additive manufactured versus traditional osteosynthesis plates - a finite element analysis

Artikel in "Transactions on Additive Manufacturing Meets Medicine", vol. 4, Nr. 1, p. 644--644, 2022
Number: 1

Abstract:
Additive Manufacturing (AM) is rapidly gaining acceptance in healthcare. Due to 3D printing of polyetheretherketone (PEEK) constructions almost any complex geometry, e. g. bio-mimicking implants or light-weight hollow implant bodies, can be produced. In this paper a direct comparison between PEEK and titanium osteosynthesis plates is achieved with a finite element analysis. By that, pros and cons of PEEK as implant material are discussed and different use cases are identified. For the comparison a generic osteosynthesis plate for diaphysis is designed. The exceeding of the yield strength even at low bending and torsional loads highlights the problems that occur when applying PEEK implants at locations which are affected by moderate mechanical loads. Since fracture stabilisation is the main function of osteosynthesis plates, stiffness is a highly relevant property of these. Therefore, a direct exchange of titanium to PEEK would increase the risk of non-union. Thus, a different structure or an improved material, e. g. carbon fibre PEEK composite, is required for loaded locations to replace metallic implants.

BibTeX:
@article{barth:additive:2022,
author = {Barth and Tobias and M{\"u}nch and Matthias and Seide and Klaus and Adam and Christian and Krautschneider and Wolfgang and Schulz and Arndt-Peter},
title = {{A}dditive manufactured versus traditional osteosynthesis plates - a finite element analysis},
year = {2022},
month = {09},
journal = {Transactions on Additive Manufacturing Meets Medicine},
note = {Number: 1},
number = {1},
pages = {644--644},
volume = {4} }

[Abstract] [BibTeX] [DOI]
Patrick Kleinschnittger, Andreas Bahr, Wolfang Krautschneider

Anregungsimpulsbasierte Impedanzspektroskopie alkalischer und erdalkalischer Lösungen

aug 2022
Beim Biosignale Workshop 2022

Abstract:
Die Impedanzspektroskopie ermöglicht interessante Anwendungen bei der Analyse von biologischem Material. Da bei einer Messung die Superposition aller die Impedanz beeinflussenden Effekte gemessen wird, ist die Interpretation der Messergebnisse häufig sehr schwierig, eine Untersuchung einzelner Bestandteile einer Probe nur bedingt möglich. Eine mögliche Lösung dieses Problems stellt die anregungsimpulsbasierte Impedanzspektroskopie dar. Bei diesem neuen Messverfahren wird ein monophasischer Rechteckpotentialimpuls an die Probe angelegt und die Stromantwort des Systems gemessen. In dieser Arbeit werden vier verschiedene Ionenlösungen verglichen. Basierend auf dem Relaxationsverhalten der Lösungen kann zwischen alkalischen und erdalkalischen Lösungen unterschieden werden.

BibTeX:
@misc{Kleinschnittger:Impedanz:2022,
author = {Patrick Kleinschnittger and Andreas Bahr and Wolfang Krautschneider},
title = {{A}nregungsimpulsbasierte {I}mpedanzspektroskopie alkalischer und erdalkalischer {L}{\"o}sungen},
year = {2022},
month = {08},
howpublished = {Workshop Beitrag},
note = {Beim Biosignale Workshop 2022} }

[Abstract] [BibTeX]
Nico Hinz, Julius Dehoust, Matthias Münch, Klaus Seide, Tobias Barth, Arndt Peter Schulz, Karl-Heinz Frosch, Maximilian Hartel

Biomechanical analysis of fixation methods in acetabular fractures : a systematic review of test setups

Artikel in "European Journal of Trauma and Emergency Surgery", vol. 48, p. 3541-3560, 2022

Abstract:

BibTeX:
@article{Barth:Fracturefixation:2022,
author = {Nico Hinz and Julius Dehoust and Matthias M{\"u}nch and Klaus Seide and Tobias Barth and Arndt Peter Schulz and Karl-Heinz Frosch and Maximilian Hartel},
title = {{B}iomechanical analysis of fixation methods in acetabular fractures : a systematic review of test setups},
year = {2022},
month = {03},
journal = {European Journal of Trauma and Emergency Surgery},
pages = {3541-3560},
volume = {48} }

[BibTeX] [DOI]
Lukas Rennpferdt, Patrick Kleinschnittger, Andreas Bahr, Hoc Khiem Trieu

3D printed silicone spinal cord implant withsub-millimeter feature size

Artikel in "Transactions on Additive Manufacturing Meets Medicine", vol. 4, Nr. 1, 2022

Abstract:
Spinal cord injury (SCI) can lead to the dysfunction of nerve fibers by hemi- or complete transection, resulting in permanent paraplegia. In recent years, a number of therapies have been developed to treat spinal cord injury. A mechanical microconnector system (mMS) that supports the regeneration of nerve fibers after SCI through a combination of different therapies was designed in previous works. For this implantable mMS with minimum feature size of a few hundreds of micrometers, it is essential to provide fast, flexible, three-dimensional fabrication. This paper describes a new fabrication method of the mMS made of silicone using additive manufacturing based on a commercially available material jetting printer. The application of this technology advances the fabrication and adaptability of mMS in terms of higher elasticity of the implant using silicone and additionally with respect to high customizability and rapid prototyping using additive manufacturing. We show the successful adaption and realization of a silicone-based mMS dimensioned for a human model with structure sizes down to 300 μm. We elaborate the advantages and disadvantages of additive, silicone-based 3D printing for this application in comparison to molding-based and subtractive 3D printing methods, thus demonstrating the relevance of this technology for medical application.

BibTeX:
@article{Rennpferdt:3D-Druck:2022,
author = {Lukas Rennpferdt and Patrick Kleinschnittger and Andreas Bahr and Hoc Khiem Trieu},
title = {3{D} printed silicone spinal cord implant withsub-millimeter feature size},
year = {2022},
journal = {Transactions on Additive Manufacturing Meets Medicine},
number = {1},
volume = {4} }

[Abstract] [BibTeX] [DOI]

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2021

Adam, Christian and Barth, Tobias and Münch, Matthias and Seide, Klaus and Krautschneider, Wolfgang H.

An Electronic Osteosynthesis Implant for Continuous Load Monitoring using a Strain Gauge

In Tagungsband "2021 IEEE Biomedical Circuits and Systems Conference (BioCAS)", 2021, p. 01-06
2021 IEEE Biomedical Circuits and Systems Conference (BioCAS), Berlin, 7.-9. October 2021

Abstract:
The utilization of strain gauges for monitoring the applied mechanical load to osteosynthesis plates using electronic implants was reported several times in literature. The technique was found to provide valuable information for monitoring the fracture healing process and for improving the rehabilitation. This paper introduces a new electronic osteosynthesis implant, which uses supercapacitors as an energy storage for short term autonomous operation. Moreover, a bluetooth low energy (BLE) transceiver is integrated into the system, which covers larger distances and is less sensitive to misalignment than the commonly used inductive data transmission. This improves the usability of the proposed system for the patients. The system can continuously sample and transmit strain values at a sampling rate of 5 Hz for more than 10 min without being recharged. More than 60 cm of distance in any practically relevant direction can be covered by the BLE data transmission if the implant is placed 5 cm deep in a phantom. The implant dimensions of 20 mm x 16 mm still fit on osteosynthesis plates for larger bones.

BibTeX:
@inproceedings{Adam:Osteosynthesis:2021,
author = {Adam and Christian and Barth and Tobias and M{\"u}nch and Matthias and Seide and Klaus and Krautschneider and Wolfgang H.},
title = {{A}n {E}lectronic {O}steosynthesis {I}mplant for {C}ontinuous {L}oad {M}onitoring using a {S}train {G}auge},
year = {2021},
month = {10},
booktitle = {2021 IEEE Biomedical Circuits and Systems Conference (BioCAS)},
note = {2021 IEEE Biomedical Circuits and Systems Conference (BioCAS), Berlin, 7.-9. October 2021},
pages = {01-06} }

[Abstract] [BibTeX] [DOI]
Faragalla, Mohamed and Krautschneider, Wolfgang and Kuhl, Matthias

Low-Leakage Differential-Drive Rectifier as 13.56 MHz Inductive Energy Harvester for Deep Medical Implants with Field Exposure Compliance

In Tagungsband "2021 IEEE International Symposium on Circuits and Systems (ISCAS)", 2021, p. 1-5
Korea, 22-28 May 2021

Abstract:
In this paper, we present a 13.56 MHz energy harvester for arterial pressure measurement implants placed at deep distances in human bodies. A 50 Î¼m diameter thin wire is used to fabricate a 150-turn solenoid coil around a PCB stripe with a cross-sectional area of 1.35 Ï‡ 1 mm². The solenoid has a length of 12 mm, low-frequency inductance of 4.75 Î¼Î—, and series resistance of 8 Î©. With this coil and an 11-stage modified differential-drive rectifier, our harvester achieved 698 nW (-31.56 dBm) sensitivity for unloaded output voltage of 1.88 V and maximum receiver efficiency of >72% at -23.5 dBm available power using 0.0228 mm² silicon area in 180 nm technology. A transmission distance of 21 cm was reached under compliance with the field exposure levels set by the IEEE Std. C95.1-2019.

BibTeX:
@inproceedings{9401629,
author = {Faragalla and Mohamed and Krautschneider and Wolfgang and Kuhl and Matthias},
title = {{L}ow-{L}eakage {D}ifferential-{D}rive {R}ectifier as 13.56 {M}{H}z {I}nductive {E}nergy {H}arvester for {D}eep {M}edical {I}mplants with {F}ield {E}xposure {C}ompliance},
year = {2021},
month = {05},
booktitle = {2021 IEEE International Symposium on Circuits and Systems (ISCAS)},
note = {Korea, 22-28 May 2021},
pages = {1-5} }

[Abstract] [BibTeX] [DOI]
Singer, Julian A. and Gelaeschus, Anton and Schuster, Christian and Trieu, Hoc Khiem and Kuhl, Matthias

Integrierte optoelektronische Systeme basierend auf hochempfindlichen Einzelphotonendetektoren für optogenetische Anwendungen

In Tagungsband "Mikroelektronik, Mikrosystemtechnik und ihre Anwendungen - Innovative Produkte fÃ¼r zukunftsfahige Markte - MikroSystemTechnik Congress 2021", 2021, p. 212--215
MST Kongress 2021

Abstract:

BibTeX:
@inproceedings{mst21singer,
author = {Singer and Julian A. and Gelaeschus and Anton and Schuster and Christian and Trieu and Hoc Khiem and Kuhl and Matthias},
title = {{I}ntegrierte optoelektronische {S}ysteme basierend auf hochempfindlichen {E}inzelphotonendetektoren f{\"u}r optogenetische {A}nwendungen},
year = {2021},
booktitle = {Mikroelektronik, Mikrosystemtechnik und ihre Anwendungen - Innovative Produkte fÃ¼r zukunftsfahige Markte - MikroSystemTechnik Congress 2021},
note = {MST Kongress 2021},
pages = {212--215} }

[BibTeX]

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2020

Kuhl, Juliane and Mendoza Ponce, Pablo Daniel and Krautschneider, Wolfgang and Krause, Dieter

Additively manufactured anatomical heart model for performance evaluation of aortic valve implants

Artikel in "Transactions on Additive Manufacturing Meets Medicine", vol. 2, Nr. 1, 2020

Abstract:

BibTeX:
@article{kuhl2020additively,
author = {Kuhl and Juliane and Mendoza Ponce and Pablo Daniel and Krautschneider and Wolfgang and Krause and Dieter},
title = {{A}dditively manufactured anatomical heart model for performance evaluation of aortic valve implants},
year = {2020},
month = {09},
journal = {Transactions on Additive Manufacturing Meets Medicine},
number = {1},
volume = {2} }

[BibTeX]
Pablo Mendoza Ponce, Gayas Sayed, Lait Abu Saleh, Wolfgang H. Krautschneider and Matthias Kuhl

A 1.9 nW Timer and Clock Generation Unit for Low Data-Rate Implantable Medical Devices

In Tagungsband "LASCAS 2020 - 11th IEEE Latin American Symposium on Circuits and Systems" der IEEE, 2020
San José, Costa Rica, 25-28 February 2020

Abstract:
This work presents a thyristor-based low power timer for wake up control of implantable monitoring devices, as well as a clock generation unit based on said approach. By using CMOS thyristors as delay elements in a ring oscillator, major drawbacks of conventional ring oscillators, such as a high stage count of inverters and capacitors with large currents flowing to ground during switching, can be overcome. This is particularly relevant for low frequency generation where these issues become even more critical in terms of power and area. Thyristors generate larger delays per stage while presenting a faster transition when switching between states, when compared to a typical CMOS inverter, an thus demand a smaller dynamic power. Timer, clock gating control and clock generation units were combined, implemented, and fabricated in 350nm CMOS technology. The timer is able to wake up the clocking system (and hence a digital control unit) every 32.45 s with a power budget of less than 2nW, while the clock generation unit produces a signal of 8.2 kHz.

BibTeX:
@inproceedings{MendozaPonce:LASCASTimer:2020,
author = {Pablo Mendoza Ponce and Gayas Sayed and Lait Abu Saleh and Wolfgang H. Krautschneider and Matthias Kuhl},
title = {{A} 1.9 n{W} {T}imer and {C}lock {G}eneration {U}nit for {L}ow {D}ata-{R}ate {I}mplantable {M}edical {D}evices},
year = {2020},
month = {02},
booktitle = {LASCAS 2020 - 11th IEEE Latin American Symposium on Circuits and Systems},
note = {San José, Costa Rica, 25-28 February 2020},
organization = {IEEE} }

[Abstract] [BibTeX]
Johan Solis-Arbustini, Pablo Mendoza-Ponce, Wolfgang H. Krautschneider and Matthias Kuhl

A 16-bits Pressure Sensing Interface Integrating a 460 fJ/conv Incremental Sigma Delta ADC for Medical Devices

In Tagungsband "LASCAS 2020 - 11th IEEE Latin American Symposium on Circuits and Systems" der IEEE, 2020
San José, Costa Rica, 25-28 February 2020

Abstract:
This work presents an incremental 2nd-order sigma delta using a single operational transconductance amplifier. This design provides a good trade-off between time conversion, high bit resolution, power consumption and area utilization for a pressure sensing reading interface. The modulator, designed in 180nm CMOS technology, has been optimized for low area utilization, occupying only 0:058mm2. Post-layout simulations were performed showing a resolution of 150 μV while consuming 120 μW and 460 fJ=conv. The system has a resolution of 16 bits, a bandwidth of 2kHz, an oversampling ratio of 512 and a sampling frequency of 2MHz.

BibTeX:
@inproceedings{Arbustini:LASCAS:2020,
author = {Johan Solis-Arbustini and Pablo Mendoza-Ponce and Wolfgang H. Krautschneider and Matthias Kuhl},
title = {{A} 16-bits {P}ressure {S}ensing {I}nterface {I}ntegrating a 460 f{J}/conv {I}ncremental {S}igma {D}elta {A}{D}{C} for {M}edical {D}evices},
year = {2020},
month = {02},
booktitle = {LASCAS 2020 - 11th IEEE Latin American Symposium on Circuits and Systems},
note = {San José, Costa Rica, 25-28 February 2020},
organization = {IEEE} }

[Abstract] [BibTeX]

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2019

Mendoza Ponce, Pablo and Abu Saleh, Lait and Krautschneider, Wolfgang and Kuhl, Matthias

3D-printing technology as a tool for medical implantable electronic devices

Artikel in "Transactions on Additive Manufacturing Meets Medicine", p. Vol 1 (2019): Trans. AMMM--, 2019

Abstract:
Medical implantable electronic devices (IMD) are of great use to research and in the treatment of various health conditions. 3D printing technology is proving to revolutionize multiple industries, including IMDs, by allowing rapid research, development and production. This paper presents how 3D printing technology was utilized during the modeling, prototyping and fabrication process of the first version of an implantable device intended for interstitial pressure monitoring.

BibTeX:
@article{https://doi.org/10.18416/ammm.2019.1909s02t03,
author = {Mendoza Ponce and Pablo and Abu Saleh and Lait and Krautschneider and Wolfgang and Kuhl and Matthias},
title = {3{D}-printing technology as a tool for medical implantable electronic devices},
year = {2019},
month = {11},
journal = {Transactions on Additive Manufacturing Meets Medicine},
pages = {Vol 1 (2019): Trans. AMMM--} }

[Abstract] [BibTeX] [DOI]
Christian Adam, Michael H. Teyfel and Dietmar Schroeder

Analog-to-Probability Conversion - Efficient Extraction of Information Based on Stochastic Signal Models

In Tagungsband "Progress in Industrial Mathematics at ECMI 2018", Verlag Springer International Publishing (Cham), 2019, p. 583--587, Herausgeber Faragó I., Izsák F., Simon P.
The 20th European Conference on Mathematics for Industry, Budapest, Ungary, 18-22 June 2018

Abstract:
Analog-to-probability conversion is introduced as a new concept for efficient parameter extraction from analog signals that can be described by nonlinear models. The current state of information about these parameters is represented by a multivariate probability distribution. Only a digital-to-analog converter and a comparator are required as acquisition hardware. The introduced approach reduces the number of comparisons to be done by the hardware and therefore the total energy consumption. As a proof of concept the algorithm is implemented on a system-on-chip and compared to a nonlinear least squares approach.

BibTeX:
@inproceedings{Adam:ECMI_APC:2019,
author = {Christian Adam and Michael H. Teyfel and Dietmar Schroeder},
title = {{A}nalog-to-{P}robability {C}onversion - {E}fficient {E}xtraction of {I}nformation {B}ased on {S}tochastic {S}ignal {M}odels},
year = {2019},
month = {11},
booktitle = {Progress in Industrial Mathematics at ECMI 2018},
address = {Cham},
editor = {Faragó I., Izsák F., Simon P.},
note = {The 20th European Conference on Mathematics for Industry, Budapest, Ungary, 18-22 June 2018},
pages = {583--587},
publisher = {Springer International Publishing} }

[Abstract] [BibTeX] [DOI]
M. Seifaei and D. Schillinger and M. Kuhl and M. Keller and U. Zschieschang and H. Klauk and Y. Manoli

Modified Bootstrap Switching Scheme for Organic Digital Integrated Circuits

Artikel in "IEEE Solid-State Circuits Letters", vol. 2, Nr. 10, p. 219-222, 2019

Abstract:
The design and implementation of a modified bootstrap switching circuit based on p-channel organic thin-film transistors and integrated thin-film resistors that addresses the lack of high-performance n-channel organic transistors is presented. Using the bootstrap technique, the fall time of the output stage is decreased by more than a factor of 10, resulting in a 10.39 times higher operating frequency for a load capacitance of 10 nF, and rail-to-rail output swing is achieved. A minimum-area inverter and a Schmitt-trigger-based inverter are presented that serve as references for comparison and as small-footprint alternatives to the bootstrap circuit. The dynamic performance of the proposed circuits is validated by comparing three different ring oscillator implementations.

BibTeX:
@article{8854293,
author = {M. Seifaei and D. Schillinger and M. Kuhl and M. Keller and U. Zschieschang and H. Klauk and Y. Manoli},
title = {{M}odified {B}ootstrap {S}witching {S}cheme for {O}rganic {D}igital {I}ntegrated {C}ircuits},
year = {2019},
month = {10},
journal = {IEEE Solid-State Circuits Letters},
number = {10},
pages = {219-222},
volume = {2} }

[Abstract] [BibTeX] [DOI]
P. Mendoza-Ponce and G. Sayed and L. A. Saleh and W. H. Krautschneider and M. Kuhl

A Pressure Sensor with 0.30 mmHg Resolution incorporating a 4.19 pJ/conv Thyristor-based Capacitance-to-Time Converter for Intra-Corporeal Pressure Monitoring Applications

In Tagungsband "2019 IEEE Biomedical Circuits and Systems Conference (BioCAS)", 2019, p. 1-4
IEEE Biomedical Circuits and Systems Conference, Nara, Japan, 2019

Abstract:
This work presents a Capacitance-to-Digital Converter for in-vivo pressure monitoring in clinical scenarios. The developed system combines a Capacitance-to-Time Converter (CTC) and a Time-to-Digital Converter (TDC), of which the CTC presents a novel architecture based on CMOS Thyristor elements with a power consumption of only 2.99 µW. The interface was implemented in a 350 nm CMOS technology and tested in combination with a commercially available capacitive pressure transducer. The Capacitance-to-Time Converter unit achieves an average pressure resolution of 0.30 mmHg while consuming 4.19 pJ/conv.

BibTeX:
@inproceedings{8919042,
author = {P. Mendoza-Ponce and G. Sayed and L. A. Saleh and W. H. Krautschneider and M. Kuhl},
title = {{A} {P}ressure {S}ensor with 0.30 mm{H}g {R}esolution incorporating a 4.19 p{J}/conv {T}hyristor-based {C}apacitance-to-{T}ime {C}onverter for {I}ntra-{C}orporeal {P}ressure {M}onitoring {A}pplications},
year = {2019},
month = {10},
booktitle = {2019 IEEE Biomedical Circuits and Systems Conference (BioCAS)},
note = {IEEE Biomedical Circuits and Systems Conference, Nara, Japan, 2019},
pages = {1-4} }

[Abstract] [BibTeX] [DOI]
Butz, Natalie and Kuhl, Matthias and Manoli, Yiannos

Charge Balancing Circuit, Stimulator Circuit and Method for Charge Balancing

apr 2019
US Patent App. 16/217,432

Abstract:

BibTeX:
@misc{butz2019charge,
author = {Butz and Natalie and Kuhl and Matthias and Manoli and Yiannos},
title = {{C}harge {B}alancing {C}ircuit, {S}timulator {C}ircuit and {M}ethod for {C}harge {B}alancing},
year = {2019},
month = {04},
note = {US Patent App. 16/217,432} }

[BibTeX]
Kuhl, Matthias and Manoli, Yiannos and Plachta, Dennis and Stieglitz, Thomas and Cota, Oscar

Digital biopotential acquisition system having 8 channels

Verlag Google Patents, feb 2019
US Patent App. 16/078,541

Abstract:

BibTeX:
@misc{kuhl2019digital,
author = {Kuhl and Matthias and Manoli and Yiannos and Plachta and Dennis and Stieglitz and Thomas and Cota and Oscar},
title = {{D}igital biopotential acquisition system having 8 channels},
year = {2019},
month = {02},
note = {US Patent App. 16/078,541},
publisher = {Google Patents} }

[BibTeX]

top

2018

Viviane S. Teixeira, Jan-Patrick Kalckhoff, Wolfgang Krautschneider, Dietmar Schroeder

Bioimpedance Analysis of L929 and HaCaT Cells in Low Frequency Range

In Tagungsband "Bioimpedance Analysis of L929 and HaCaT Cells in Low Frequency Range" der DGBMT - German Society for Biomedical Engineering (VDE|DGBMT), Verlag De Gruyter, 2018, Nr. 4(1), Serie "1", p. 1-4, Herausgeber Current Directions in Biomedical Engineering 2018
BMT 2018 - 52nd DGBMT Annual Conference of the German Society for Biomedical Engineering

Abstract:
In this work, Bioimpedance Spectroscopy (BIS) is used to study fluids and cell solutions. A new four-electrode-terminal(4T) chamber using 3D printing and stainless steel corrosion resistant (V4A) was designed to measure the impedance oflive cell solutions at the frequency range 0.1Hz-1MHz. At frequencies below 1kHz the double layer (DL) that builds atelectrode’s surface raises the impedance substantially preventing the observation of the real impedance of the cells. Thenew 4T design circumvents the DL, is more robust and cheap, and allows for the repeatability of the results. Experimentswere performed in vitro with two cell lines, L929 (mouse fibroblasts) and HaCaT (human keratinocytes). Resultsshow that it is possible to distinguish between the two cell lines by means of its BIS measurements in the new setup.Also, a low-frequency dispersion ( -dispersion) was observed in HaCaT cells solution, but not in L929. By the end, apotentiostat circuit model was developed in LTSpice to simulate the hardware setup and two different circuit modelswere used to fit cell's data.

BibTeX:
@inproceedings{Teixeira:BMT2018,
author = {Viviane S. Teixeira and Jan-Patrick Kalckhoff and Wolfgang Krautschneider and Dietmar Schroeder},
title = {{B}ioimpedance {A}nalysis of {L}929 and {H}a{C}a{T} {C}ells in {L}ow {F}requency {R}ange},
year = {2018},
month = {09},
booktitle = {Bioimpedance Analysis of L929 and HaCaT Cells in Low Frequency Range},
editor = {Current Directions in Biomedical Engineering 2018},
note = {BMT 2018 - 52nd DGBMT Annual Conference of the German Society for Biomedical Engineering},
number = {4(1)},
organization = {DGBMT - German Society for Biomedical Engineering (VDE|DGBMT)},
pages = {1-4},
publisher = {De Gruyter},
series = {1} }

[Abstract] [BibTeX]
P. Mendoza-Ponce and B. John and D. Schroeder and W. H. Krautschneider

Super-capacitors for implantable medical devices with wireless power transmission

In Tagungsband "2018 14th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)", 2018, p. 241-244
2018 14th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)

Abstract:
Patients using implantable devices with wireless power transmission (such as inductive telemetry) as the energy source are required to carry external hardware and antennas on their body continuously during the monitoring period. This discomfort can be reduced by integrating tiny super-capacitors as an energy source for the device. The external wireless telemetry unit used to activate and interrogate the implantable device charges the super capacitors integrated on it. When the wireless telemetry unit is removed, the super capacitor powers the implantable device. This paper shows the benefits of integrating super capacitors onto an existing pressure sensing medical implant that utilises an inductive telemetry link. Test results show that the implant can be powered for a full day using an 88 mF super capacitor. This super capacitor can be fully charged using the inductive telemetry link at a wireless distance of 20 cm in 81 seconds.

BibTeX:
@inproceedings{8430360,
author = {P. Mendoza-Ponce and B. John and D. Schroeder and W. H. Krautschneider},
title = {{S}uper-capacitors for implantable medical devices with wireless power transmission},
year = {2018},
month = {07},
booktitle = {2018 14th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)},
note = {2018 14th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)},
pages = {241-244} }

[Abstract] [BibTeX] [DOI]
Butz, Natalie and Taschwer, Armin and Nessler, Sebastian and Manoli, Yiannos and Kuhl, Matthias

A 22 V Compliant 56$$$$ackslash$mu$$ $ W Twin-Track Active Charge Balancing Enabling 100\% Charge Compensation Even in Monophasic and 36\% Amplitude Correction in Biphasic Neural Stimulators

Artikel in "IEEE Journal of Solid-State Circuits", vol. 53, Nr. 8, p. 2298--2310, 2018

Abstract:

BibTeX:
@article{butz201822,
author = {Butz and Natalie and Taschwer and Armin and Nessler and Sebastian and Manoli and Yiannos and Kuhl and Matthias},
title = {{A} 22 {V} {C}ompliant 56$$$$ackslash$mu$$ $ {W} {T}win-{T}rack {A}ctive {C}harge {B}alancing {E}nabling 100% {C}harge {C}ompensation {E}ven in {M}onophasic and 36% {A}mplitude {C}orrection in {B}iphasic {N}eural {S}timulators},
year = {2018},
journal = {IEEE Journal of Solid-State Circuits},
number = {8},
pages = {2298--2310},
publisher = {IEEE},
volume = {53} }

[BibTeX]
De Dorigo, Daniel and Moranz, Christian and Graf, Hagen and Marx, Maximilian and Wendler, Daniel and Shui, Boyu and Herbawi, Abdalrahman Sayed and Kuhl, Matthias and Ruther, Patrick and Paul, Oliver and others

Fully Immersible Subcortical Neural Probes With Modular Architecture and a Delta-Sigma ADC Integrated Under Each Electrode for Parallel Readout of 144 Recording Sites

Artikel in "IEEE Journal of Solid-State Circuits", vol. 53, Nr. 11, p. 3111--3125, 2018

Abstract:

BibTeX:
@article{de2018fully2,
author = {De Dorigo and Daniel and Moranz and Christian and Graf and Hagen and Marx and Maximilian and Wendler and Daniel and Shui and Boyu and Herbawi and Abdalrahman Sayed and Kuhl and Matthias and Ruther and Patrick and Paul and Oliver and others},
title = {{F}ully {I}mmersible {S}ubcortical {N}eural {P}robes {W}ith {M}odular {A}rchitecture and a {D}elta-{S}igma {A}{D}{C} {I}ntegrated {U}nder {E}ach {E}lectrode for {P}arallel {R}eadout of 144 {R}ecording {S}ites},
year = {2018},
journal = {IEEE Journal of Solid-State Circuits},
number = {11},
pages = {3111--3125},
publisher = {IEEE},
volume = {53} }

[BibTeX]
Juan-Jose Montero-Rodriguez

Impedance spectroscopy for characterization of biological matter

Buch, erschienen bei Logos Berlin (Berlin), vol. 8, Serie "Wissenschaftliche Beiträge zur Medizinelektronik", 2018, Herausgeber Wolfgang Krautschneider

Abstract:
Standard characterization methods of biological cells are time consuming and may reduce cell viability by staining them with markers. An alternative fast and non-destructive method is developed using impedance spectroscopy, which has potential applications in biology. The technique is used to identify tumor cells in mice, detect bacterial eye infections, monitor fruit ripening, and measure sweat lactate concentration in humans by using a skin sensor. These applications often require a portable measurement system. Therefore, three portable systems were designed and tested. It has been shown that the method can be further improved by four-terminal measurements. For extension of the method in the millimeter-wave frequencies, full electromagnetic simulation of the chip has been carried out, and electrodes and interconnections have been adjusted accordingly.

BibTeX:
@book{Rodriguez.2018,
author = {Juan-Jose Montero-Rodriguez},
title = {{I}mpedance spectroscopy for characterization of biological matter},
year = {2018},
address = {Berlin},
editor = {Wolfgang Krautschneider},
publisher = {Logos Berlin},
series = {Wissenschaftliche Beitr{\"a}ge zur Medizinelektronik},
volume = {8} }

[Abstract] [BibTeX]
Seifaei, Masoud and De Dorigo, Daniel and Fleig, David Ingvar and Kuhl, Matthias and Zschieschang, Ute and Klauk, Hagen and Manoli, Yiannos

Stable, Self-Biased and High-Gain Organic Amplifiers with Reduced Parameter Variation Effect

In Tagungsband "2018 IEEE Asian Solid-State Circuits Conference (A-SSCC)" der IEEE, 2018, p. 119--122

Abstract:

BibTeX:
@inproceedings{seifaei2018stable,
author = {Seifaei and Masoud and De Dorigo and Daniel and Fleig and David Ingvar and Kuhl and Matthias and Zschieschang and Ute and Klauk and Hagen and Manoli and Yiannos},
title = {{S}table, {S}elf-{B}iased and {H}igh-{G}ain {O}rganic {A}mplifiers with {R}educed {P}arameter {V}ariation {E}ffect},
year = {2018},
booktitle = {2018 IEEE Asian Solid-State Circuits Conference (A-SSCC)},
organization = {IEEE},
pages = {119--122} }

[BibTeX]
De Dorigo, Daniel and Moranz, Christian and Graf, Hagen and Marx, Maximilian and Shui, Boyu and Kuhl, Matthias and Manoli, Yiannos

A fully immersible deep-brain neural probe with modular architecture and a delta-sigma ADC integrated under each electrode for parallel readout of 144 recording sites

In Tagungsband "2018 IEEE International Solid-State Circuits Conference-(ISSCC)" der IEEE, 2018, p. 462--464

Abstract:

BibTeX:
@inproceedings{de2018fully,
author = {De Dorigo and Daniel and Moranz and Christian and Graf and Hagen and Marx and Maximilian and Shui and Boyu and Kuhl and Matthias and Manoli and Yiannos},
title = {{A} fully immersible deep-brain neural probe with modular architecture and a delta-sigma {A}{D}{C} integrated under each electrode for parallel readout of 144 recording sites},
year = {2018},
booktitle = {2018 IEEE International Solid-State Circuits Conference-(ISSCC)},
organization = {IEEE},
pages = {462--464} }

[BibTeX]
Shui, Boyu and Keller, Matthias and Kuhl, Matthias and Manoli, Yiannos

A 70.8 dB 0.0045 mm 2 low-power continuous-time incremental delta-sigma modulator for multi-site neural recording interfaces

In Tagungsband "2018 IEEE International Symposium on Circuits and Systems (ISCAS)" der IEEE, 2018, p. 1--4

Abstract:

BibTeX:
@inproceedings{shui201870,
author = {Shui and Boyu and Keller and Matthias and Kuhl and Matthias and Manoli and Yiannos},
title = {{A} 70.8 d{B} 0.0045 mm 2 low-power continuous-time incremental delta-sigma modulator for multi-site neural recording interfaces},
year = {2018},
booktitle = {2018 IEEE International Symposium on Circuits and Systems (ISCAS)},
organization = {IEEE},
pages = {1--4} }

[BibTeX]
Butz, Natalie and Kalita, Utpal and Kuhl, Matthias and Manoli, Yiannos

Active Charge Balancer with 6.6 to 40 V Quad-Rail Power Supply Compliance for Neural Stimulators

In Tagungsband "2018 IEEE International Symposium on Circuits and Systems (ISCAS)" der IEEE, 2018, p. 1--4

Abstract:

BibTeX:
@inproceedings{butz2018active,
author = {Butz and Natalie and Kalita and Utpal and Kuhl and Matthias and Manoli and Yiannos},
title = {{A}ctive {C}harge {B}alancer with 6.6 to 40 {V} {Q}uad-{R}ail {P}ower {S}upply {C}ompliance for {N}eural {S}timulators},
year = {2018},
booktitle = {2018 IEEE International Symposium on Circuits and Systems (ISCAS)},
organization = {IEEE},
pages = {1--4} }

[BibTeX]
Sayed, Gayas Mohiuddin and Mendoza-Ponce, Pablo and Krautschneider, Wolfgang and Kuhl, Matthias

Ultra-Low-Power Self-Biased 1 nA Current Reference Circuit for Medical Monitoring Devices in 350 nm and 180 nm CMOS Technology

In Tagungsband "ANALOG 2018; 16th GMM/ITG-Symposium" der VDE, 2018, p. 1--4

Abstract:

BibTeX:
@inproceedings{sayed2018ultra,
author = {Sayed and Gayas Mohiuddin and Mendoza-Ponce and Pablo and Krautschneider and Wolfgang and Kuhl and Matthias},
title = {{U}ltra-{L}ow-{P}ower {S}elf-{B}iased 1 n{A} {C}urrent {R}eference {C}ircuit for {M}edical {M}onitoring {D}evices in 350 nm and 180 nm {C}{M}{O}{S} {T}echnology},
year = {2018},
booktitle = {ANALOG 2018; 16th GMM/ITG-Symposium},
organization = {VDE},
pages = {1--4} }

[BibTeX]
Bibin John, Clemens Spink, Markus Braunschweig, Rajeev Ranjan, Dietmar Schroeder, Andreas Koops, Gregor Woldt, Ilka Rauh, Andreas Leuzinger, Gerhard Adam, Wolfgang H. Krautschneider

A Stent Graft Occlusion Detection : Pressure Sensing Implant Device with Inductive Power and Data Telemetry

In Tagungsband "ISCAS 2018, IEEE", 2018
Florence, 27-30 may 2018

Abstract:

BibTeX:
@inproceedings{bibin:iscas2018,
author = {Bibin John and Clemens Spink and Markus Braunschweig and Rajeev Ranjan and Dietmar Schroeder and Andreas Koops and Gregor Woldt and Ilka Rauh and Andreas Leuzinger and Gerhard Adam and Wolfgang H. Krautschneider},
title = {{A} {S}tent {G}raft {O}cclusion {D}etection : {P}ressure {S}ensing {I}mplant {D}evice with {I}nductive {P}ower and {D}ata {T}elemetry},
year = {2018},
booktitle = {ISCAS 2018, IEEE},
note = {Florence, 27-30 may 2018} }

[BibTeX] [DOI]
Rajeev Ranjan, Mirko Hansen, Pablo Mendoza Ponce, Lait Abu Saleh, Dietmar Schroeder, Martin Ziegler, Herman Kohlstedt, Wolfgang H. Krautschneider

Integration of Double Barrier Memristor with Neuron ASIC for Neuromorphic Hardware Learning

In Tagungsband "ISCAS 2018, IEEE", 2018
Florence, 27-30 may 2018

Abstract:

BibTeX:
@inproceedings{ranjan:ISCAS2018,
author = {Rajeev Ranjan and Mirko Hansen and Pablo Mendoza Ponce and Lait Abu Saleh and Dietmar Schroeder and Martin Ziegler and Herman Kohlstedt and Wolfgang H. Krautschneider},
title = {{I}ntegration of {D}ouble {B}arrier {M}emristor with {N}euron {A}{S}{I}{C} for {N}euromorphic {H}ardware {L}earning},
year = {2018},
booktitle = {ISCAS 2018, IEEE},
note = {Florence, 27-30 may 2018} }

[BibTeX] [DOI]

top

2017

Rajeev Ranjan, Alexandros Kyrmanidis, Wolf Lukas Hellweg, Pablo Mendoza Ponce, Lait Abu Saleh, Dietmar Schroeder, Wolfgang H. Krautschneider

Integrated Circuit with Memristor Emulator Array and Neuron Circuits for Biologically Inspired Neuromorphic Pattern Recognition

Artikel in "Journal of Circuits, Systems and Computers", vol. 26, Nr. 11, 2017

Abstract:

BibTeX:
@article{Ranjan:JCSC:2017,
author = {Rajeev Ranjan and Alexandros Kyrmanidis and Wolf Lukas Hellweg and Pablo Mendoza Ponce and Lait Abu Saleh and Dietmar Schroeder and Wolfgang H. Krautschneider},
title = {{I}ntegrated {C}ircuit with {M}emristor {E}mulator {A}rray and {N}euron {C}ircuits for {B}iologically {I}nspired {N}euromorphic {P}attern {R}ecognition},
year = {2017},
month = {11},
journal = {Journal of Circuits, Systems and Computers},
number = {11},
volume = {26} }

[BibTeX] [DOI]
Diego Lujan Villarreal

Toward Pixel-wise Vision in Epiretinal Visual Prosthesis

Dissertation an der TUHH, PhD Dissertation, 2017

Abstract:
Visual prosthesis aims to restore vision to those affected by sight-robbing illnesses. Although government-approved vision devices provide advantageous sight enhancements, visual and spatial perception of electrically activated cells requires significant improvement for delivering functional vision. High-level theoretical studies of electrode arrangements and of realistic neural responses in the retina are modeled for enhancing visual perception. Computational efficiency in neural modeling and deep theoretical thinking for a possible physical realization of electronics are considered. The theoretical viability of increasing electrode sites, safe avenues of stimulation that guarantee electrochemical safety and pixel-wise stimulation are met. The understanding of the physical aspects of phosphenes is addressed. Neural modeling is verified by means of experimental studies from literature.

BibTeX:
@phdthesis{ddlv,
author = {Diego Lujan Villarreal},
title = {{T}oward {P}ixel-wise {V}ision in {E}piretinal {V}isual {P}rosthesis},
year = {2017},
month = {11},
school = {TUHH},
type = {PhD Dissertation} }

[Abstract] [BibTeX]
Diego Lujan Villarreal, Dietmar Schroeder and Wolfgang H. Krautschneider

Biomimetic Stimulating Array for Single Localized Stimulation in Visual Prosthesis

Artikel in "International Journal of Computational & Neural Engineering (IJCNE)", vol. 4, Nr. 3, p. 76-90, 2017

Abstract:
Visual prostheses electrically stimulate nearby neurons to generate artificial vision in patients blinded by retinal degenerative diseases. Current prosthetic devices offer limited spatial resolution that results in unselective stimulation of ganglion cells and the generation of percepts with shapes other than a small spot of light. In this study, we introduce a theoretical ap-proach to treat the biomimetic retinal electrode array. This array produces electrodes that are self-determined to adjust their spatial parameters for single localized stimulation. Electrode stimulation of the biomimetic electrode array was simulated in a 3D reconstruction of the retina and ganglionic layer at locations in the retina with high area cell density. We also simulated ganglion cell stimulation in the far periphery as the array could be relocated on the retina due to the natural movements of the eye. Single localized stimulation was achieved throughout the retinal regions near the fovea, which is required in humans for activities where visual detail is of primary importance and thus relevant for high resolution vision. Single-cell stimula-tion responses leveled off until 30° of eccentricity in average using the biomimetic array with large array area. That is, the biomimetic array can produce a stable stimulation of single cells and a broad field of view for a wide region of the retina.Lastly, we provide considerations for the biomimetic electrode array for practical applications. Together of being useful to improve single cell activation, the applicability of the biomimetic electrode array can yield strategies to increase the area of the array and produce a wide-ranging field of view.

BibTeX:
@article{bsaslsvp,
author = {Diego Lujan Villarreal and Dietmar Schroeder and Wolfgang H. Krautschneider},
title = {{B}iomimetic {S}timulating {A}rray for {S}ingle {L}ocalized {S}timulation in {V}isual {P}rosthesis},
year = {2017},
month = {10},
journal = {International Journal of Computational {&} Neural Engineering (IJCNE)},
number = {3},
pages = {76-90},
volume = {4} }

[Abstract] [BibTeX]
Jonas David Rieseler, Matthias Kuhl

A Superposition-Based Analog Data Compression Scheme for Massively-Parallel Neural Recordings

In Tagungsband "2017 IEEE Biomedical Circuits and Systems Conference (BioCAS)", 2017, p. 1--4, Herausgeber IEEE

Abstract:

BibTeX:
@inproceedings{rieseler:2017,
author = {Jonas David Rieseler and Matthias Kuhl},
title = {{A} {S}uperposition-{B}ased {A}nalog {D}ata {C}ompression {S}cheme for {M}assively-{P}arallel {N}eural {R}ecordings},
year = {2017},
month = {10},
booktitle = {2017 IEEE Biomedical Circuits and Systems Conference (BioCAS)},
editor = {IEEE},
pages = {1--4} }

[BibTeX]
Diego Lujan Villarreal, Dietmar Schroeder and Wolfgang H. Krautschneider

A Treatise of the Physical Aspects of Phosphenes and Single-Cell Selectivity in Retinal Stimulation

Artikel in "International Journal of Computational & Neural Engineering (IJCNE)", vol. 4, Nr. 2, p. 55-70, 2017

Abstract:
Objective: Artificial vision is currently in an early-stage of maturity. This can be understood as a falling short of visualprosthesis to generate a complete visual scene with detail perception. Similarly, the physical aspects of phosphenes or spotsof light demand a better understanding.Approach: This study introduces the strategy of the activation area and pinpoints its usefulness to estimate the amountof cells activated and identify the size and shape of the phosphenes. A simulation framework was built by integrating therelevant retinal interface elements and the dynamics of the ionic channels in the ganglion cells. Shape perceptions reportedby Keserü in clinical trials were directly compared with our simulation framework. Similarly, the strategy of the activationarea is used on a proposed electrode array to activate single cells and to produce a small spot of light required for highresolutionvision.Main Results: The wide range of shape responses formerly described by patients is highly correlated with our simulationbasedfindings. Single-cell selectivity was reached throughout the regions near the fovea, which is necessary in humans foractivities where visual detail is of primary importance and thus relevant for high resolution vision. For realistic applications,we provided the dimensions of the electrode carrier for single localized stimulation.Significance: Together of being useful to identify the physical aspects of phosphenes generated by electrical stimulation,the applicability of the activation area can yield valuable strategies to attain single-cell selectivity

BibTeX:
@article{atpapscsrs,
author = {Diego Lujan Villarreal and Dietmar Schroeder and Wolfgang H. Krautschneider},
title = {{A} {T}reatise of the {P}hysical {A}spects of {P}hosphenes and {S}ingle-{C}ell {S}electivity in {R}etinal {S}timulation},
year = {2017},
month = {09},
journal = {International Journal of Computational {&} Neural Engineering (IJCNE)},
number = {2},
pages = {55-70},
volume = {4} }

[Abstract] [BibTeX]
Bibin John

Smart system for invasive measurement of biomedical parameters

Buch, erschienen bei Logos Verlag Berlin GmbH, Serie "Wissenschaftliche Beiträge zur Medizinelektronik, Bd. 7", 2017, Herausgeber Wolfgang Krautschneider

Abstract:

BibTeX:
@book{johnDiss17,
author = {Bibin John},
title = {{S}mart system for invasive measurement of biomedical parameters},
year = {2017},
month = {09},
editor = {Wolfgang Krautschneider},
publisher = {Logos Verlag Berlin GmbH},
series = {Wissenschaftliche Beitr{\"a}ge zur Medizinelektronik, Bd. 7} }

[BibTeX]
Andreas Bahr

Aufnahme von Hirnsignalen mit extrem miniaturisierten elektronischen Systemen zur Untersuchung von lokalen neuronalen Vernetzungen

Buch, erschienen bei Logos Verlag Berlin GmbH, Serie "Wissenschaftliche Beiträge zur Medizinelektronik, Bd. 6", 2017, Herausgeber Wolfgang Krautschneider

Abstract:

BibTeX:
@book{BahrDiss2017,
author = {Andreas Bahr},
title = {{A}ufnahme von {H}irnsignalen mit extrem miniaturisierten elektronischen {S}ystemen zur {U}ntersuchung von lokalen neuronalen {V}ernetzungen},
year = {2017},
month = {08},
editor = {Wolfgang Krautschneider},
publisher = {Logos Verlag Berlin GmbH},
series = {Wissenschaftliche Beitr{\"a}ge zur Medizinelektronik, Bd. 6} }

[BibTeX]
Juan J. Montero-Rodriguez, Adolfo J. Fernández-Castro, Dietmar Schroeder, Wolfgang Krautschneider

Development of an impedance spectroscopy device for on-line cell growth monitoring

Artikel in "Electronics Letters", 2017

Abstract:
The impedance and dielectric properties of biological samples are often used to estimate the number of cells growing in a culture, and monitor the cell growth in real time. For these type of studies, high-cost and complex commercial equipment is often required. This work presents the design and implementation of a standalone device for impedance spectroscopy of cell samples, featuring low cost, portability, and easy reconfigurability of frequency and voltage. The device can generate sinusoidal, square and triangular signals with frequencies up to 125 kHz, at voltages in the range from 0 V to 100 mV. Cell growth experiments were carried out with yeast cultures, and the results are compared with a commercial Agilent 4284A LCR meter. The error percentages for magnitude and phase measurements are less than 5%.

BibTeX:
@article{Montero2017,
author = {Juan J. Montero-Rodriguez and Adolfo J. Fernández-Castro and Dietmar Schroeder and Wolfgang Krautschneider},
title = {{D}evelopment of an impedance spectroscopy device for on-line cell growth monitoring},
year = {2017},
month = {06},
journal = {Electronics Letters} }

[Abstract] [BibTeX] [DOI]
Enver Solan, Sven Dirkmann, Mirko Hansen, Dietmar Schroeder, Hermann Kohlstedt, Martin Ziegler, Thomas Mussenbrock and Karlheinz Ochs

An enhanced lumped element electrical model of a double barrier memristive device

Artikel in "Journal of Physics D: Applied Physics", vol. 50, Nr. 19, p. 195102, 2017

Abstract:
The massive parallel approach of neuromorphic circuits leads to effective methods for solving complex problems. It has turned out that resistive switching devices with a continuous resistance range are potential candidates for such applications. These devices are memristive systems—nonlinear resistors with memory. They are fabricated in nanotechnology and hence parameter spread during fabrication may aggravate reproducible analyses. This issue makes simulation models of memristive devices worthwhile. Kinetic Monte-Carlo simulations based on a distributed model of the device can be used to understand the underlying physical and chemical phenomena. However, such simulations are very time-consuming and neither convenient for investigations of whole circuits nor for real-time applications, e.g. emulation purposes. Instead, a concentrated model of the device can be used for both fast simulations and real-time applications, respectively. We introduce an enhanced electrical model of a valence change mechanism (VCM) based double barrier memristive device (DBMD) with a continuous resistance range. This device consists of an ultra-thin memristive layer sandwiched between a tunnel barrier and a Schottky-contact. The introduced model leads to very fast simulations by using usual circuit simulation tools while maintaining physically meaningful parameters. Kinetic Monte-Carlo simulations based on a distributed model and experimental data have been utilized as references to verify the concentrated model.

BibTeX:
@article{Solan:2017,
author = {Enver Solan and Sven Dirkmann and Mirko Hansen and Dietmar Schroeder and Hermann Kohlstedt and Martin Ziegler and Thomas Mussenbrock and Karlheinz Ochs},
title = {{A}n enhanced lumped element electrical model of a double barrier memristive device},
year = {2017},
month = {05},
journal = {Journal of Physics D: Applied Physics},
number = {19},
pages = {195102},
volume = {50} }

[Abstract] [BibTeX] [DOI]
Andreas Bahr, Lait Abu Saleh, Dietmar Schroeder and Wolfgang H. Krautschneider

Neural Recording Integrated Circuit for the Recording of Brain Signals from Neonatal Mice

Artikel in "Activity Report 2016, Europractice IC Service", p. 35 - 36, 2017

Abstract:

BibTeX:
@article{BahrEuropractice2017,
author = {Andreas Bahr and Lait Abu Saleh and Dietmar Schroeder and Wolfgang H. Krautschneider},
title = {{N}eural {R}ecording {I}ntegrated {C}ircuit for the {R}ecording of {B}rain {S}ignals from {N}eonatal {M}ice},
year = {2017},
month = {03},
journal = {Activity Report 2016, Europractice IC Service},
pages = {35 - 36} }

[BibTeX]
Viviane Silva Teixeira, Jan-Patrick Kalckhoff, Wolfgang Krautschneider

Impedance Spectroscopy Measurement of Ionic Solutions in order to Distinguish between Different Ions

In Tagungsband "ICTOpen 2017 Conference Proceedings" der NWO, 2017, p. 14-17
Amersfoort, Nederlands, March 21-22, 2017

Abstract:
In this work simulation and experimental results of the frequency response of ionic solutions are presented. The used technique known as Electrical Impedance Spectroscopy (EIS) can be used for electrical characterization of chemical solutions regarding their ionic concentration. This technique may be used in several fields, e.g. for measurement of biological cells and tissues and for food quality control.

BibTeX:
@inproceedings{Teixeira:ICTO2017,
author = {Viviane Silva Teixeira and Jan-Patrick Kalckhoff and Wolfgang Krautschneider},
title = {{I}mpedance {S}pectroscopy {M}easurement of {I}onic {S}olutions in order to {D}istinguish between {D}ifferent {I}ons},
year = {2017},
month = {03},
booktitle = {ICTOpen 2017 Conference Proceedings},
note = {Amersfoort, Nederlands, March 21-22, 2017},
organization = {NWO},
pages = {14-17} }

[Abstract] [BibTeX]
David Katzmarek, Andreas Bahr, Lait Abu Saleh, Dietmar Schroeder and Wolfgang H. Krautschneider

New Data Recording Plugin for the Integration of an Integrated Circuit for Neural Recordings into the Electrophysiology Open Source User Interface Open Ephys

In Tagungsband "ICTOpen 2017 Conference Proceedings", 2017
Amersfoort, The Netherlands, March 21 - 22, 2017

Abstract:

BibTeX:
@inproceedings{BahrICTOpen2017,
author = {David Katzmarek and Andreas Bahr and Lait Abu Saleh and Dietmar Schroeder and Wolfgang H. Krautschneider},
title = {{N}ew {D}ata {R}ecording {P}lugin for the {I}ntegration of an {I}ntegrated {C}ircuit for {N}eural {R}ecordings into the {E}lectrophysiology {O}pen {S}ource {U}ser {I}nterface {O}pen {E}phys},
year = {2017},
month = {03},
booktitle = {ICTOpen 2017 Conference Proceedings},
note = {Amersfoort, The Netherlands, March 21 - 22, 2017} }

[BibTeX] [DOI]
Pablo Mendoza Ponce, Dietmar Schröder, Wolfgang H. Krautschneider

Trade-off Study on Switched Capacitor Regulators for Implantable Medical Devices

In Tagungsband "ICTOpen 2017 Conference Proceedings" der NWO, 2017, p. 4-7
Amersfoort, Nederlands, 21-22 March 2017

Abstract:
This study presents the trade-offs when using a Switched capacitor (SC) DC-DC converter as the energy management device on a highly integrated implantable medical device. The efficiency of the Low Dropout Regulator (LDO) is presented and used as a reference point to determine the performance gain when using an SC converter. Also, the balance between load requirements and optimum parameters for implementing an SC converter is analyzed. The analysis presented can be used to determine when an SC converter is the best solution for energy management on an implantable device.

BibTeX:
@inproceedings{Mendoza:ICTOpen2017,
author = {Pablo Mendoza Ponce and Dietmar Schr{\"o}der and Wolfgang H. Krautschneider},
title = {{T}rade-off {S}tudy on {S}witched {C}apacitor {R}egulators for {I}mplantable {M}edical {D}evices},
year = {2017},
month = {03},
booktitle = {ICTOpen 2017 Conference Proceedings},
note = {Amersfoort, Nederlands, 21-22 March 2017},
organization = {NWO},
pages = {4-7} }

[Abstract] [BibTeX]
Cagil Gümüs, Andreas Bahr, Lait Abu Saleh, Dietmar Schroeder and Wolfgang Krautschneider

Comparison of Single Ended and Differential Signalling for Wired Biomedical Implants Using SPI Communication with Reed Solomon Error Correction Codes

In Tagungsband "Biomedical Engineering (BioMed 2017)", 2017, Herausgeber IASTED
Innsbruck, Austria, February 20 - 21, 2017

Abstract:

BibTeX:
@inproceedings{BahrBioMed2017,
author = {Cagil G{\"u}m{\"u}s and Andreas Bahr and Lait Abu Saleh and Dietmar Schroeder and Wolfgang Krautschneider},
title = {{C}omparison of {S}ingle {E}nded and {D}ifferential {S}ignalling for {W}ired {B}iomedical {I}mplants {U}sing {S}{P}{I} {C}ommunication with {R}eed {S}olomon {E}rror {C}orrection {C}odes},
year = {2017},
month = {02},
booktitle = {Biomedical Engineering (BioMed 2017)},
editor = {IASTED},
note = {Innsbruck, Austria, February 20 - 21, 2017} }

[BibTeX] [DOI]
Meister, Tilo and Ellinger, Frank and Bartha, Johann W and Berroth, Manfred and Burghartz, Joachim and Claus, Martin and Frey, Lothar and Gagliardi, Alessio and Grundmann, Marius and Kuhl, Matthias and others

Program FFlexCom—High frequency flexible bendable electronics for wireless communication systems

In Tagungsband "2017 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS)" der IEEE, 2017, p. 1--6

Abstract:

BibTeX:
@inproceedings{meister2017program,
author = {Meister and Tilo and Ellinger and Frank and Bartha and Johann W and Berroth and Manfred and Burghartz and Joachim and Claus and Martin and Frey and Lothar and Gagliardi and Alessio and Grundmann and Marius and Kuhl and Matthias and others},
title = {{P}rogram {F}{F}lex{C}om—{H}igh frequency flexible bendable electronics for wireless communication systems},
year = {2017},
booktitle = {2017 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS)},
organization = {IEEE},
pages = {1--6} }

[BibTeX]
Hafner, Julian and Kuhl, Matthias and Schwaerzle, Michael and Hehn, Thorsten and Rossbach, Daniel and Paul, Oliver

Fabrication of Planar Copper Microcoils for Telemetric Orthodontic Applications

In Tagungsband "Multidisciplinary Digital Publishing Institute Proceedings", 2017, vol. 1, Nr. 4, p. 571

Abstract:

BibTeX:
@inproceedings{hafner2017fabrication,
author = {Hafner and Julian and Kuhl and Matthias and Schwaerzle and Michael and Hehn and Thorsten and Rossbach and Daniel and Paul and Oliver},
title = {{F}abrication of {P}lanar {C}opper {M}icrocoils for {T}elemetric {O}rthodontic {A}pplications},
year = {2017},
booktitle = {Multidisciplinary Digital Publishing Institute Proceedings},
number = {4},
pages = {571},
volume = {1} }

[BibTeX]

top

2016

Butz, Natalie and Kuhl, Matthias and Manoli, Yiannos

Charge Balancing Circuit, Stimulator Circuit and Method for Charge Balancing

dec 2016
US Patent App. 15/173,380

Abstract:

BibTeX:
@misc{butz2016charge,
author = {Butz and Natalie and Kuhl and Matthias and Manoli and Yiannos},
title = {{C}harge {B}alancing {C}ircuit, {S}timulator {C}ircuit and {M}ethod for {C}harge {B}alancing},
year = {2016},
month = {12},
note = {US Patent App. 15/173,380} }

[BibTeX]
Andreas Bahr, Lait Abu Saleh, Robin Hinsch, Dietmar Schroeder, Dirk Isbrandt and Wolfgang H. Krautschneider

Small Area, Low Power Neural Recording Integrated Circuit in 130 nm CMOS Technology for Small Mammalians

In Tagungsband "Proceedings of the IEEE 28th International Conference on Microelectronics", 2016, Herausgeber IEEE
28th International Conference on Microelectronics (ICM), Cairo, Egypt, 17 - 20 December 2016

Abstract:

BibTeX:
@inproceedings{Bahr:IEEE:ICM:2016,
author = {Andreas Bahr and Lait Abu Saleh and Robin Hinsch and Dietmar Schroeder and Dirk Isbrandt and Wolfgang H. Krautschneider},
title = {{S}mall {A}rea, {L}ow {P}ower {N}eural {R}ecording {I}ntegrated {C}ircuit in 130 nm {C}{M}{O}{S} {T}echnology for {S}mall {M}ammalians},
year = {2016},
month = {12},
booktitle = {Proceedings of the IEEE 28th International Conference on Microelectronics},
editor = {IEEE},
note = {28th International Conference on Microelectronics (ICM), Cairo, Egypt, 17 - 20 December 2016} }

[BibTeX] [DOI]
Andreas Bahr, Lait Abu Saleh, Dietmar Schroeder and Wolfgang H. Krautschneider

Towards an implantable integrated neural recording system for neonatal mice

In Tagungsband "2016 Neuroscience Meeting Planner", 2016, Herausgeber Society for Neuroscience
Neuroscience 2016, San Diego, USA, 12-16 November 2016

Abstract:

BibTeX:
@inproceedings{Bahr:Neuroscience:2016,
author = {Andreas Bahr and Lait Abu Saleh and Dietmar Schroeder and Wolfgang H. Krautschneider},
title = {{T}owards an implantable integrated neural recording system for neonatal mice},
year = {2016},
month = {11},
booktitle = {2016 Neuroscience Meeting Planner},
editor = {Society for Neuroscience},
note = {Neuroscience 2016, San Diego, USA, 12-16 November 2016} }

[BibTeX] [DOI]
Bibin John, Clemens Spink, Markus Braunschweig, Rajeev Ranjan, Dietmar Schroeder, Andreas Koops, Gregor Woldt, Ilka Rauh, Andreas Leuzinger, Gerhard Adam, Wolfgang H. Krautschneider

Telemetric System for Monitoring of Endoleak in Abdominal Aorta Aneurysm using Multiple Pressure Sensors integrated on a Stent Graft

In Tagungsband "12th IEEE Biomedical Circuits and Systems (BioCAS2016)" der IEEE, 2016
Shanghai, China, 17-19 October 2016

Abstract:
An abdominal aortic aneurysm (AAA) is the dilation of the abdominal aorta due to weakening of the arterial wall. Endovascular aneurysm repair (EVAR) using an implantable stent graft is the commonly used method for treatment of AAA. An endoleak, which is the leakage of blood around the stent graft, is the complication after EVAR creating trauma to the weakened arterial walls of the aneurysm leading to further enlargement and risk of rupture. This paper details the design, implementation and testing of a wirelessly powered implant device containing multiple pressure sensors to be mounted on a stent graft for detecting endoleak. The tested implant device can be powered for distance of 20 cm using an external RF power source of 2.65 W. A stent prototype with sixteen pressure sensors is fabricated and tested using an in-vitro chamber. The resolution and directionality of the pressure sensors in the stent prototype are measured. Different wirebonding glob top encapsulations are evaluated for mechanical stress induced during stent delivery.

BibTeX:
@inproceedings{BioCAS2016,
author = {Bibin John and Clemens Spink and Markus Braunschweig and Rajeev Ranjan and Dietmar Schroeder and Andreas Koops and Gregor Woldt and Ilka Rauh and Andreas Leuzinger and Gerhard Adam and Wolfgang H. Krautschneider},
title = {{T}elemetric {S}ystem for {M}onitoring of {E}ndoleak in {A}bdominal {A}orta {A}neurysm using {M}ultiple {P}ressure {S}ensors integrated on a {S}tent {G}raft},
year = {2016},
month = {10},
booktitle = {12th IEEE Biomedical Circuits and Systems (BioCAS2016)},
note = {Shanghai, China, 17-19 October 2016},
organization = {IEEE} }

[Abstract] [BibTeX] [DOI]
Andreas Bahr, Lait Abu Saleh, Dietmar Schroeder and Wolfgang H. Krautschneider

High speed digital interfacing for a neural data acquisition system - Enabling of live display functionality for a neural recording system

In Tagungsband "Current Directions in Biomedical Engineering. Band 2, Heft 1, Seiten 87–90", 2016, Herausgeber Dössel, Olaf
BMT 2016, "Dreiländertagung" Swiss, Austrian  and German Societies of Biomedical Engineering, Basel, 4 – 6 October 2016

Abstract:
Diseases like schizophrenia and genetic epilepsy are supposed to be caused by disorders in the early development of the brain. For the further investigation of these relationships a custom designed application specific integrated circuit (ASIC) was developed that is optimized for the recording from neonatal mice. To enable the live display of the neural signals a multichannel neural data acquisition system with live display functionality is presented. It implements a high speed data transmission from the ASIC to a computer with a live display functionality. The system has been successfully implemented and was used in a neural recording of a head-fixed mouse.

BibTeX:
@inproceedings{Bahr:BMT:2016,
author = {Andreas Bahr and Lait Abu Saleh and Dietmar Schroeder and Wolfgang H. Krautschneider},
title = {{H}igh speed digital interfacing for a neural data acquisition system - {E}nabling of live display functionality for a neural recording system},
year = {2016},
month = {10},
booktitle = {Current Directions in Biomedical Engineering. Band 2, Heft 1, Seiten 87–90},
editor = {D{\"o}ssel, Olaf},
note = {BMT 2016, "Dreil{\"a}ndertagung" Swiss, Austrian {&}#8232;and German Societies of Biomedical Engineering, Basel, 4 – 6 October 2016} }

[Abstract] [BibTeX] [DOI]
Jan C. Loitz, Aljoscha Reinert, Ann-Kristin Neumann, Fanny Quandt, Dietmar Schroeder and Wolfgang H. Krautschneider

A flexible standalone system with integrated sensor feedback for multi-pad electrode FES of the hand

Artikel in "Current Directions in Biomedical Engineering", vol. 2, Nr. 1, p. 391-394, 2016

Abstract:

BibTeX:
@article{Loitz:BMT:2016,
author = {Jan C. Loitz and Aljoscha Reinert and Ann-Kristin Neumann and Fanny Quandt and Dietmar Schroeder and Wolfgang H. Krautschneider},
title = {{A} flexible standalone system with integrated sensor feedback for multi-pad electrode {F}{E}{S} of the hand},
year = {2016},
month = {09},
journal = {Current Directions in Biomedical Engineering},
number = {1},
pages = {391-394},
volume = {2} }

[BibTeX] [DOI]
F. Quandt, J. Feldheim, J.C. Loitz, D. Wolff, M. Rohm, R. Rupp, W.H. Krautschneider, F.C. Hummel

EP 5. Decrement of the effect of neuromuscular electrical stimulation over time in chronic stroke patients

Artikel in "Clinical Neurophysiology", vol. 127, Nr. 9, p. 234-235, 2016

Abstract:

BibTeX:
@article{Quandt:Stroke:2016,
author = {F. Quandt and J. Feldheim and J.C. Loitz and D. Wolff and M. Rohm and R. Rupp and W.H. Krautschneider and F.C. Hummel},
title = {{E}{P} 5. {D}ecrement of the effect of neuromuscular electrical stimulation over time in chronic stroke patients},
year = {2016},
month = {09},
journal = {Clinical Neurophysiology},
number = {9},
pages = {234-235},
volume = {127} }

[BibTeX] [DOI]
Aljoscha Reinert, Jan C. Loitz, Fanny Quandt, Dietmar Schroeder andWolfgang H. Krautschneider

Smart control for functional electrical stimulation with optimal pulse intensity

Artikel in "Current Directions in Biomedical Engineering", vol. 2, Nr. 1, p. 395-398, 2016

Abstract:

BibTeX:
@article{Reinert:BMT:2016,
author = {Aljoscha Reinert and Jan C. Loitz and Fanny Quandt and Dietmar Schroeder andWolfgang H. Krautschneider},
title = {{S}mart control for functional electrical stimulation with optimal pulse intensity},
year = {2016},
month = {09},
journal = {Current Directions in Biomedical Engineering},
number = {1},
pages = {395-398},
volume = {2} }

[BibTeX] [DOI]
R. Ranjan and B. John and D. Schroeder and W. H. Krautschneider

Capacitance to Digital Converter ASIC with Wireless Energy and Wireless Data Transmission for a Medical Implant

In Tagungsband "ANALOG 2016; 15. ITG/GMM-Symposium" der VDE, 2016, p. 93-97
Bremen, Germany , 12-14 Sep 2016

Abstract:
A typical medical implant electronics consists of a sensor with additional electronic components for sensor measurement, wireless energy harvesting and wireless data transmission. The implant electronics must be as small as possible, so that it can be implanted inside the body of the patient. This paper details the design of an application-specific integrated circuit (ASIC) which integrates sensor measurement, wireless power reception and wireless data transmission in a single die. The ASIC is designed to support a capacitive pressure sensor and it is powered using inductive coupling. The sensor measurement uses a reference fixed capacitor to compensate for the baseline drift of pressure value in the implant. The ASIC is designed in a 350 nm High Voltage CMOS technology.

BibTeX:
@inproceedings{Ranjan:ANALOG2016,
author = {R. Ranjan and B. John and D. Schroeder and W. H. Krautschneider},
title = {{C}apacitance to {D}igital {C}onverter {A}{S}{I}{C} with {W}ireless {E}nergy and {W}ireless {D}ata {T}ransmission for a {M}edical {I}mplant},
year = {2016},
month = {09},
booktitle = {ANALOG 2016; 15. ITG/GMM-Symposium},
note = {Bremen, Germany , 12-14 Sep 2016},
organization = {VDE},
pages = {93-97} }

[Abstract] [BibTeX]
Rajeev Ranjan, Alexandros Kyrmanidis, Wolf Lukas Hellweg, Pablo Mendoza Ponce, Lait Abu Saleh, Dietmar Schroeder, Wolfgang H. Krautschneider

Integrated Circuit with Memristor Emulator Array and Neuron Circuits for Neuromorphic Pattern Recognition

In Tagungsband "39th International Conference on Telecommunications and Signal Processing (TSP 2016)" der IEEE, 2016, p. 265-268
Vienna, Austria, 27-29 June 2016

Abstract:

BibTeX:
@inproceedings{TSP2016paper2,
author = {Rajeev Ranjan and Alexandros Kyrmanidis and Wolf Lukas Hellweg and Pablo Mendoza Ponce and Lait Abu Saleh and Dietmar Schroeder and Wolfgang H. Krautschneider},
title = {{I}ntegrated {C}ircuit with {M}emristor {E}mulator {A}rray and {N}euron {C}ircuits for {N}euromorphic {P}attern {R}ecognition},
year = {2016},
month = {06},
booktitle = {39th International Conference on Telecommunications and Signal Processing (TSP 2016)},
note = {Vienna, Austria, 27-29 June 2016},
organization = {IEEE},
pages = {265-268} }

[BibTeX] [DOI]
Rajeev Ranjan,Pablo Mendoza Ponce, Anirudh Kankuppe, Bibin John, Lait Abu Saleh, Dietmar Schroeder, Wolfgang H. Krautschneider

Programmable Memristor Emulator ASIC for Biologically Inspired Memristive Learning

In Tagungsband "39th International Conference on Telecommunications and Signal Processing (TSP 2016)" der IEEE, 2016, p. 261-264
Vienna, Austria , 27-29 June 2016

Abstract:

BibTeX:
@inproceedings{TSP2016paper1,
author = {Rajeev Ranjan,Pablo Mendoza Ponce and Anirudh Kankuppe and Bibin John and Lait Abu Saleh and Dietmar Schroeder and Wolfgang H. Krautschneider},
title = {{P}rogrammable {M}emristor {E}mulator {A}{S}{I}{C} for {B}iologically {I}nspired {M}emristive {L}earning},
year = {2016},
month = {06},
booktitle = {39th International Conference on Telecommunications and Signal Processing (TSP 2016)},
note = {Vienna, Austria , 27-29 June 2016},
organization = {IEEE},
pages = {261-264} }

[BibTeX] [DOI]
Diego Lujan Villarreal, Dietmar Schroeder and Wolfgang H. Krautschneider

Feasibility Study of a 1000+ Electrode Array in Epiretinal Prosthesis

In Tagungsband "International Journal of Bioscience, Biochemistry and Bioinformatics", 2016
In Tagungsband "8th International Conference on Bioinformatics and Biomedical Technology Conference Proceedings", 2016 Barcelona, Spain. June 10-12, 2016.

Abstract:

BibTeX:
@inproceedings{icbbt2016_1,
author = {Diego Lujan Villarreal and Dietmar Schroeder and Wolfgang H. Krautschneider},
title = {{F}easibility {S}tudy of a 1000+ {E}lectrode {A}rray in {E}piretinal {P}rosthesis},
year = {2016},
month = {06},
booktitle = {International Journal of Bioscience, Biochemistry and Bioinformatics},
note = {In Tagungsband "8th International Conference on Bioinformatics and Biomedical Technology Conference Proceedings", 2016 Barcelona, Spain. June 10-12, 2016.} }

[BibTeX]
Diego Lujan Villarreal, Dietmar Schroeder and Wolfgang H. Krautschneider

Novel Method for Realizing 1000+ Electrode Array in Epi- or Subretinal Prosthesis

In Tagungsband "International Journal of Bioscience, Biochemistry and Bioinformatics", 2016
In Tagungsband "8th International Conference on Bioinformatics and Biomedical Technology Conference Proceedings", 2016 Barcelona, Spain. June 10-12, 2016.

Abstract:

BibTeX:
@inproceedings{icbbt2016_2,
author = {Diego Lujan Villarreal and Dietmar Schroeder and Wolfgang H. Krautschneider},
title = {{N}ovel {M}ethod for {R}ealizing 1000+ {E}lectrode {A}rray in {E}pi- or {S}ubretinal {P}rosthesis},
year = {2016},
month = {06},
booktitle = {International Journal of Bioscience, Biochemistry and Bioinformatics},
note = {In Tagungsband "8th International Conference on Bioinformatics and Biomedical Technology Conference Proceedings", 2016 Barcelona, Spain. June 10-12, 2016.} }

[BibTeX]
Andreas Bahr, Lait Abu Saleh, Dietmar Schroeder and Wolfgang H. Krautschneider

Integrierter Schaltkreis zur Aufnahme von Biosignalen

In Tagungsband "Proceedings of the Workshop Biosignal Processing", 2016
Berlin, Germany, April 7 - 8, 2016

Abstract:

BibTeX:
@inproceedings{BahrBioSignal2016,
author = {Andreas Bahr and Lait Abu Saleh and Dietmar Schroeder and Wolfgang H. Krautschneider},
title = {{I}ntegrierter {S}chaltkreis zur {A}ufnahme von {B}iosignalen},
year = {2016},
month = {04},
booktitle = {Proceedings of the Workshop Biosignal Processing},
note = {Berlin, Germany, April 7 - 8, 2016} }

[BibTeX]
Diego Lujan Villarreal, Dietmar Schroeder and Wolfgang H. Krautschneider

Charge Density Study using Low Electrode Diameter in Epiretinal Prosthesis

In Tagungsband "Conference proceedings ICTOpen2016", 2016
In Tagungsband "ICTOpen 2016 Conference Proceedings", 2016 Amersfoort, The Netherlands, March 22 - 23, 2016

Abstract:

BibTeX:
@inproceedings{ictopen2016,
author = {Diego Lujan Villarreal and Dietmar Schroeder and Wolfgang H. Krautschneider},
title = {{C}harge {D}ensity {S}tudy using {L}ow {E}lectrode {D}iameter in {E}piretinal {P}rosthesis},
year = {2016},
month = {03},
booktitle = {Conference proceedings ICTOpen2016},
note = {In Tagungsband "ICTOpen 2016 Conference Proceedings", 2016 Amersfoort, The Netherlands, March 22 - 23, 2016} }

[BibTeX]
Radu Ciocoveanu, Andreas Bahr and Wolfgang H. Krautschneider

Design of a Rail-to-Rail Folded Cascode Amplifierwith Transconductance Feedback Circuit

In Tagungsband "ICTOpen 2016 Conference Proceedings", 2016
Amersfoort, The Netherlands, March 22 - 23, 2016

Abstract:

BibTeX:
@inproceedings{BahrICTOpen2016,
author = {Radu Ciocoveanu and Andreas Bahr and Wolfgang H. Krautschneider},
title = {{D}esign of a {R}ail-to-{R}ail {F}olded {C}ascode {A}mplifierwith {T}ransconductance {F}eedback {C}ircuit},
year = {2016},
month = {03},
booktitle = {ICTOpen 2016 Conference Proceedings},
note = {Amersfoort, The Netherlands, March 22 - 23, 2016} }

[BibTeX] [DOI]
Juan J. Montero-Rodríguez, Edgar Eduardo Salazar-Flórez, Paola Vega-Castillo, Jakob M. Tomasik, Wjatscheslaw Galjan, Kristian M. Hafkemeyer and Wolfgang Krautschneider

An Impedance Spectroscopy ASIC for Low-Frequency Characterization of Biological Samples

In Tagungsband "9th International Joint Conference on Biomedical Engineering Systems and Technologies (BIOSTEC 2016) - Volume 1: BIODEVICES", 2016, p. 222-228, Herausgeber SCITEPRESS
Rome, Italy, February 21 - 23, 2016

Abstract:

BibTeX:
@inproceedings{Montero2016,
author = {Juan J. Montero-Rodríguez and Edgar Eduardo Salazar-Flórez and Paola Vega-Castillo and Jakob M. Tomasik and Wjatscheslaw Galjan and Kristian M. Hafkemeyer and Wolfgang Krautschneider},
title = {{A}n {I}mpedance {S}pectroscopy {A}{S}{I}{C} for {L}ow-{F}requency {C}haracterization of {B}iological {S}amples},
year = {2016},
month = {02},
booktitle = {9th International Joint Conference on Biomedical Engineering Systems and Technologies (BIOSTEC 2016) - Volume 1: BIODEVICES},
editor = {SCITEPRESS},
note = {Rome, Italy, February 21 - 23, 2016},
pages = {222-228} }

[BibTeX] [DOI]
Jan C. Loitz, Aljoscha Reinert, Nils Remer, Dietmar Schroeder and Wolfgang H. Krautschneider

Energy Minimization during Transcutaneous Electrical Stimulation by Charge Efficient Stimulation Pulses - Benefits of Using Short Duration and High Amplitude Stimulation Pulses

In Tagungsband "9th International Joint Conference on Biomedical Engineering Systems and Technologies (BIOSTEC 2016) - Volume 1: BIODEVICES", 2016, p. 251-255, Herausgeber SCITEPRESS
Rome, Italy, February 21 - 23, 2016

Abstract:

BibTeX:
@inproceedings{Loitz:BD:2016,
author = {Jan C. Loitz and Aljoscha Reinert and Nils Remer and Dietmar Schroeder and Wolfgang H. Krautschneider},
title = {{E}nergy {M}inimization during {T}ranscutaneous {E}lectrical {S}timulation by {C}harge {E}fficient {S}timulation {P}ulses - {B}enefits of {U}sing {S}hort {D}uration and {H}igh {A}mplitude {S}timulation {P}ulses},
year = {2016},
month = {02},
booktitle = {9th International Joint Conference on Biomedical Engineering Systems and Technologies (BIOSTEC 2016) - Volume 1: BIODEVICES},
editor = {SCITEPRESS},
note = {Rome, Italy, February 21 - 23, 2016},
pages = {251-255} }

[BibTeX] [DOI]
Andreas Bahr, Lait Abu Saleh, Dietmar Schroeder and Wolfgang H. Krautschneider

Integrated 16-Channel Neural Recording Circuit with SPI Interface and Error Correction Code in 130 nm CMOS Technology

In Tagungsband "9th International Joint Conference on Biomedical Engineering Systems and Technologies (BIOSTEC 2016) - Volume 1: BIODEVICES", 2016, p. 263-268, Herausgeber SCITEPRESS
Rome, Italy, February 21 - 23, 2016

Abstract:
In the research of neural diseases like epilepsy and schizophrenia genetic mouse models play a very important role. Dysfunctions during early brain development might cause these diseases. The analysis of the brain signals is the key to understand this process and develop treatments. To enable the acquisition of brain signals from neonatal mice, an integrated circuit for neural recording is presented. It is minimized for low area consumption and can be placed in a miniaturized system on the head of the mouse. It is intended to acquire the local field and action potentials from the brain. 16 analog input channels are implemented. The biomedical signals are amplified with analog pre-amplifiers. Two parallel structures of 8:1 multiplexer, post-amplifier and ADC are implemented to digitize the signals. The post-amplifier has programmable gain and high driving capability. The ADC is implemented as a 10 bit SAR ADC. Digital SPI interfacing is used to reduce the number of transmission lines. Reed Solomon Error Correction Coding has been implemented to enable error correction. The mixed-signal integrated circuit has been successfully implemented in a 130 nm CMOS technology. It is optimized for low area consumption; the channel density is approximately 10 channels/mm².

BibTeX:
@inproceedings{BahrBiodevices2016,
author = {Andreas Bahr and Lait Abu Saleh and Dietmar Schroeder and Wolfgang H. Krautschneider},
title = {{I}ntegrated 16-{C}hannel {N}eural {R}ecording {C}ircuit with {S}{P}{I} {I}nterface
and {E}rror {C}orrection {C}ode in 130 nm {C}{M}{O}{S} {T}echnology},
year = {2016},
month = {02},
booktitle = {9th International Joint Conference on Biomedical Engineering Systems and Technologies (BIOSTEC 2016) - Volume 1: BIODEVICES},
editor = {SCITEPRESS},
note = {Rome, Italy, February 21 - 23, 2016},
pages = {263-268} }

[Abstract] [BibTeX] [DOI]
Aljoscha Reinert, Jan C. Loitz, Nils Remer, Dietmar Schroeder and Wolfgang H. Krautschneider

Usability of Passive Models for Energy Minimization of Transcutaneous Electrical Stimulation - Possibilities and Shortcomings of Analytical Solutions of Passive Models and Possible Improvements

In Tagungsband "9th International Joint Conference on Biomedical Engineering Systems and Technologies (BIOSTEC 2016) - Volume 1: BIODEVICES", 2016, p. 269-274, Herausgeber SCITEPRESS
Rome, Italy, February 21 - 23, 2016

Abstract:

BibTeX:
@inproceedings{Reinert:BD:2016,
author = {Aljoscha Reinert and Jan C. Loitz and Nils Remer and Dietmar Schroeder and Wolfgang H. Krautschneider},
title = {{U}sability of {P}assive {M}odels for {E}nergy {M}inimization of {T}ranscutaneous {E}lectrical {S}timulation - {P}ossibilities and {S}hortcomings of {A}nalytical {S}olutions of {P}assive {M}odels and {P}ossible {I}mprovements},
year = {2016},
month = {02},
booktitle = {9th International Joint Conference on Biomedical Engineering Systems and Technologies (BIOSTEC 2016) - Volume 1: BIODEVICES},
editor = {SCITEPRESS},
note = {Rome, Italy, February 21 - 23, 2016},
pages = {269-274} }

[BibTeX] [DOI]
Rajeev Ranjan, Bibin John, Dipal Gosh, Soumil Kumar, Lait Abu Saleh, Dietmar Schroeder and Wolfgang H. Krautschneider

Wireless Energy and Data Transmission ASIC for Blood Pressure Measurement in an Aneurysm Implant

In Tagungsband "9th International Joint Conference on Biomedical Engineering Systems and Technologies (BIOSTEC 2016) - Volume 1: BIODEVICES", 2016, p. 256-262, Herausgeber SCITEPRESS
Rome, Italy, February 21 - 23, 2016

Abstract:

BibTeX:
@inproceedings{RanjanBiodevices2016,
author = {Rajeev Ranjan and Bibin John and Dipal Gosh and Soumil Kumar and Lait Abu Saleh and Dietmar Schroeder and Wolfgang H. Krautschneider},
title = {{W}ireless {E}nergy and {D}ata {T}ransmission {A}{S}{I}{C} for {B}lood {P}ressure {M}easurement in an {A}neurysm {I}mplant},
year = {2016},
month = {02},
booktitle = {9th International Joint Conference on Biomedical Engineering Systems and Technologies (BIOSTEC 2016) - Volume 1: BIODEVICES},
editor = {SCITEPRESS},
note = {Rome, Italy, February 21 - 23, 2016},
pages = {256-262} }

[BibTeX] [DOI]
Bibin John, Rajeev Ranjan, Clemens Spink, Dietmar Schroeder, Andreas Koops, Gerhard Adam, Wolfgang H. Krautschneider

Wireless Blood Pressure Measurement Implant Electronics for integration in a Stent Graft

In Tagungsband "Biomedical Engineering (BioMed 2016)", 2016, Herausgeber IASTED
Innsbruck, Austria, February 15 - 16, 2016

Abstract:

BibTeX:
@inproceedings{BioMed2016,
author = {Bibin John and Rajeev Ranjan and Clemens Spink and Dietmar Schroeder and Andreas Koops and Gerhard Adam and Wolfgang H. Krautschneider},
title = {{W}ireless {B}lood {P}ressure {M}easurement {I}mplant {E}lectronics for integration in a {S}tent {G}raft},
year = {2016},
month = {02},
booktitle = {Biomedical Engineering (BioMed 2016)},
editor = {IASTED},
note = {Innsbruck, Austria, February 15 - 16, 2016} }

[BibTeX] [DOI]
P. Morel and E. Ferrea and B. Taghizadeh-Sarshouri and J. Cardona Audi and R. Ruff and K.-P. Hoffmann and S. Lewis and M. Russold and H. Dietl and L. Abu-Saleh and D. Schroeder and W. Krautschneider and T. Meiners and A. Gail

Long-term decoding of movement force and direction with a wireless myoelectric implant

Artikel in "Journal of Neural Engineering", vol. 13, Nr. 1, p. 016002, 2016

Abstract:
Objective. The ease of use and number of degrees of freedom of current myoelectric hand prostheses is limited by the information content and reliability of the surface electromyography (sEMG) signals used to control them. For example, cross-talk limits the capacity to pick up signals from small or deep muscles, such as the forearm muscles for distal arm amputations, or sites of targeted muscle reinnervation (TMR) for proximal amputations. Here we test if signals recorded from the fully implanted, induction-powered wireless Myoplant system allow long-term decoding of continuous as well as discrete movement parameters with better reliability than equivalent sEMG recordings. The Myoplant system uses a centralized implant to transmit broadband EMG activity from four distributed bipolar epimysial electrodes. Approach. Two Rhesus macaques received implants in their backs, while electrodes were placed in their upper arm. One of the monkeys was trained to do a cursor task via a haptic robot, allowing us to control the forces exerted by the animal during arm movements. The second animal was trained to perform a center-out reaching task on a touchscreen. We compared the implanted system with concurrent sEMG recordings by evaluating our ability to decode time-varying force in one animal and discrete reach directions in the other from multiple features extracted from the raw EMG signals. Main results. In both cases, data from the implant allowed a decoder trained with data from a single day to maintain an accurate decoding performance during the following months, which was not the case for concurrent surface EMG recordings conducted simultaneously over the same muscles. Significance. These results show that a fully implantable, centralized wireless EMG system is particularly suited for long-term stable decoding of dynamic movements in demanding applications such as advanced forelimb prosthetics in a wide range of configurations (distal amputations, TMR).

BibTeX:
@article{Morel:JNeurEng:2016,
author = {P. Morel and E. Ferrea and B. Taghizadeh-Sarshouri and J. Cardona Audi and R. Ruff and K.-P. Hoffmann and S. Lewis and M. Russold and H. Dietl and L. Abu-Saleh and D. Schroeder and W. Krautschneider and T. Meiners and A. Gail},
title = {{L}ong-term decoding of movement force and direction with a wireless myoelectric implant},
year = {2016},
month = {01},
journal = {Journal of Neural Engineering},
number = {1},
pages = {016002},
volume = {13} }

[Abstract] [BibTeX] [DOI]
Bibin John, Rajeev Ranjan, Lait Abu Saleh, Dietmar Schroeder and Wolfgang H. Krautschneider

Wireless Energy and Data Transmission ASIC for a Medical Implant

Artikel in "Activity Report 2015, Europractice IC Service", p. 22, 2016

Abstract:

BibTeX:
@article{Europractice2015,
author = {Bibin John and Rajeev Ranjan and Lait Abu Saleh and Dietmar Schroeder and Wolfgang H. Krautschneider},
title = {{W}ireless {E}nergy and {D}ata {T}ransmission {A}{S}{I}{C} for a {M}edical {I}mplant},
year = {2016},
journal = {Activity Report 2015, Europractice IC Service},
pages = {22} }

[BibTeX]
Cota, Oscar F and Plachta, Dennis and Stieglitz, Thomas and Kundumattathil, Sarath and Manoli, Yiannos and Kuhl, Matthias

In vivo characterization of a versatile 8-channel digital biopotential recording system with sub-$mu$V RMS input noise

In Tagungsband "2016 38th Annual International Conference of the IEEE Engineering in Medicine and Biology Society (EMBC)" der IEEE, 2016, p. 6311--6314

Abstract:

BibTeX:
@inproceedings{cota2016vivo,
author = {Cota and Oscar F and Plachta and Dennis and Stieglitz and Thomas and Kundumattathil and Sarath and Manoli and Yiannos and Kuhl and Matthias},
title = {{I}n vivo characterization of a versatile 8-channel digital biopotential recording system with sub-$mu${V} {R}{M}{S} input noise},
year = {2016},
booktitle = {2016 38th Annual International Conference of the IEEE Engineering in Medicine and Biology Society (EMBC)},
organization = {IEEE},
pages = {6311--6314} }

[BibTeX]
Butz, Natalie and Taschwer, Armin and Manoli, Yiannos and Kuhl, Matthias

22.6 A 22V compliant 56$mu$W active charge balancer enabling 100\% charge compensation even in monophasic and 36\% amplitude correction in biphasic neural stimulators

In Tagungsband "2016 IEEE International Solid-State Circuits Conference (ISSCC)" der IEEE, 2016, p. 390--391

Abstract:

BibTeX:
@inproceedings{butz201622,
author = {Butz and Natalie and Taschwer and Armin and Manoli and Yiannos and Kuhl and Matthias},
title = {22.6 {A} 22{V} compliant 56$mu${W} active charge balancer enabling 100% charge compensation even in monophasic and 36% amplitude correction in biphasic neural stimulators},
year = {2016},
booktitle = {2016 IEEE International Solid-State Circuits Conference (ISSCC)},
organization = {IEEE},
pages = {390--391} }

[BibTeX]
Kuhl, Matthias and Manoli, Yiannos

Area reduction techniques for deep-brain probes with electronic depth control

In Tagungsband "2016 IEEE International Symposium on Circuits and Systems (ISCAS)" der IEEE, 2016, p. 1834--1837

Abstract:

BibTeX:
@inproceedings{kuhl2016area,
author = {Kuhl and Matthias and Manoli and Yiannos},
title = {{A}rea reduction techniques for deep-brain probes with electronic depth control},
year = {2016},
booktitle = {2016 IEEE International Symposium on Circuits and Systems (ISCAS)},
organization = {IEEE},
pages = {1834--1837} }

[BibTeX]
Hehn, T and Hoffmann, D and Kuhl, M and Leicht, J and Lotze, N and Moranz, C and Rossbach, D and Ylli, K and Manoli, Y

Energy-Harvesting Applications and Efficient Power Processing

In "CHIPS 2020 VOL. 2", Verlag Springer International Publishing, 2016, p. 275--300

Abstract:

BibTeX:
@incollection{hehn2016energy,
author = {Hehn and T and Hoffmann and D and Kuhl and M and Leicht and J and Lotze and N and Moranz and C and Rossbach and D and Ylli and K and Manoli and Y},
title = {{E}nergy-{H}arvesting {A}pplications and {E}fficient {P}ower {P}rocessing},
year = {2016},
booktitle = {CHIPS 2020 VOL. 2},
pages = {275--300},
publisher = {Springer International Publishing} }

[BibTeX]
Hehn, Thorsten and Kuhl, Matthias and Rossbach, Daniel and Folkmer, Bernd and Mintenbeck, Dieter and Manoli, Yiannos

StressSens: Drahtlose und energieautonome CMOS-integrierte Stressmessung

In Tagungsband "VDE-Kongress 2016" der VDE VERLAG GmbH, 2016

Abstract:

BibTeX:
@inproceedings{hehn2016stresssens,
author = {Hehn and Thorsten and Kuhl and Matthias and Rossbach and Daniel and Folkmer and Bernd and Mintenbeck and Dieter and Manoli and Yiannos},
title = {{S}tress{S}ens: {D}rahtlose und energieautonome {C}{M}{O}{S}-integrierte {S}tressmessung},
year = {2016},
booktitle = {VDE-Kongress 2016},
organization = {VDE VERLAG GmbH} }

[BibTeX]

top

2015

C. Spink, B. John, W.H. Krautschneider, D. Schroeder, R. Fischbach, M. Braunschweig, J.-H. Buhk, G.B. Adam, A. Koops

Integrated Stent-graft for Wireless 4-dimensional Aneurysm Sac Pressure Monitoring after Endovascular Aortic Aneurysm Repair (EVAR): First in Vitro Results

In Tagungsband "101st Scientific Assembly and Annual Meeting (RSNA 2015)" der Radiological Society of North America, 2015
RSNA 2015, Chicago, 29. Nov. - 4. Dec. 2015

Abstract:

BibTeX:
@inproceedings{Spink:RSNA:2015,
author = {C. Spink and B. John and W.H. Krautschneider and D. Schroeder and R. Fischbach and M. Braunschweig and J.-H. Buhk and G.B. Adam and A. Koops},
title = {{I}ntegrated {S}tent-graft for {W}ireless 4-dimensional {A}neurysm {S}ac {P}ressure {M}onitoring after {E}ndovascular {A}ortic {A}neurysm {R}epair ({E}{V}{A}{R}): {F}irst in {V}itro {R}esults},
year = {2015},
month = {11},
booktitle = {101st Scientific Assembly and Annual Meeting (RSNA 2015)},
note = {RSNA 2015, Chicago, 29. Nov. - 4. Dec. 2015},
organization = {Radiological Society of North America} }

[BibTeX]
Jan Loitz, Aljoscha Reinert, Dietmar Schroeder, Wolfgang Krautschneider

Impact of electrode geometry on force generation during functional electrical stimulation

Artikel in "Current Directions in Biomedical Engineering", vol. 1, Nr. 1, p. 458–461, 2015

Abstract:

BibTeX:
@article{Loitz:BMT:2015,
author = {Jan Loitz and Aljoscha Reinert and Dietmar Schroeder and Wolfgang Krautschneider},
title = {{I}mpact of electrode geometry on force generation during functional electrical stimulation},
year = {2015},
month = {09},
journal = {Current Directions in Biomedical Engineering},
number = {1},
pages = {458–461},
volume = {1} }

[BibTeX] [DOI]
Andreas Bahr, Lait Abu-Saleh, Dietmar Schroeder, Wolfgang Krautschneider

Development of a Neural Recording Mixed Signal Integrated Circuit for Biomedical Signal Acquisition

In Tagungsband "BMT 2015", Verlag DE GRUYTER, 2015
49th Annual Conference of the German Society for Biomedical Engineering, Lübeck, September 16-18, 2015

Abstract:
The analysis of electrocorticographic signals (ECoG) from the cortex of mice plays a key role in certain genetic mouse disease models. For experiments with neonatal mice (body weight: 3-5 g) an application specific integrated circuit (ASIC) with small size and low power requirements is necessary. Towards reaching this goal a 16 channel neural recording mixed signal ASIC was developed and successfully fabricated in 130 nm CMOS technology.

BibTeX:
@inproceedings{Bahr:BMT:2015,
author = {Andreas Bahr and Lait Abu-Saleh and Dietmar Schroeder and Wolfgang Krautschneider},
title = {{D}evelopment of a {N}eural {R}ecording {M}ixed {S}ignal {I}ntegrated {C}ircuit for {B}iomedical {S}ignal {A}cquisition},
year = {2015},
month = {09},
booktitle = {BMT 2015},
note = {49th Annual Conference of the German Society for Biomedical Engineering, L{\"u}beck, September 16-18, 2015},
publisher = {DE GRUYTER} }

[Abstract] [BibTeX] [DOI]
Zhihao Pan

Modeling and optimization of discrete ESD protection devices

Dissertation an der TUHH, Dissertation (Verlag Dr. Hut), 2015

Abstract:

BibTeX:
@phdthesis{Pan:ESD:2015,
author = {Zhihao Pan},
title = {{M}odeling and optimization of discrete {E}{S}{D} protection devices},
year = {2015},
month = {06},
address = {Verlag Dr. Hut},
school = {TUHH},
type = {Dissertation} }

[BibTeX]
Prada Rojas, Jorge Enrique, Krautschneider, Wolfgang, Vega Castillo, Paola

Design of a Wide Tuning-Range CMOS 130-nm Quadrature VCO for Cell Impedance Spectroscopy

In Tagungsband "6th IEEE Germany Student Conference Proceedings" der IEEE, Verlag IEEE, 2015, p. 7-12, Herausgeber IEEE
IEEE Germany Student Conference, Hamburg, TUHH 18-19.06.2015

Abstract:

BibTeX:
@inproceedings{Prada:IEEE:2015,
author = {Prada Rojas and Jorge Enrique and Krautschneider and Wolfgang and Vega Castillo and Paola},
title = {{D}esign of a {W}ide {T}uning-{R}ange {C}{M}{O}{S} 130-nm {Q}uadrature {V}{C}{O} for {C}ell {I}mpedance {S}pectroscopy},
year = {2015},
month = {06},
booktitle = {6th IEEE Germany Student Conference Proceedings},
editor = {IEEE},
note = {IEEE Germany Student Conference, Hamburg, TUHH 18-19.06.2015},
organization = {IEEE},
pages = {7-12},
publisher = {IEEE} }

[BibTeX]
Juan J. Montero-Rodriguez, Dietmar Schroeder, Wolfgang Krautschneider and Ricardo Starbird

Equivalent circuit models for electrochemical impedance spectroscopy of PEDOT-coated electrodes

In Tagungsband "6th IEEE Germany Student Conference Proceedings" der IEEE, Verlag IEEE, 2015, p. 13-16, Herausgeber IEEE
IEEE Germany Student Conference, Hamburg, TUHH 18-19.06.2015

Abstract:

BibTeX:
@inproceedings{Montero:IEEE:2015,
author = {Juan J. Montero-Rodriguez and Dietmar Schroeder and Wolfgang Krautschneider and Ricardo Starbird},
title = {{E}quivalent circuit models for electrochemical impedance spectroscopy of {P}{E}{D}{O}{T}-coated electrodes},
year = {2015},
month = {06},
booktitle = {6th IEEE Germany Student Conference Proceedings},
editor = {IEEE},
note = {IEEE Germany Student Conference, Hamburg, TUHH 18-19.06.2015},
organization = {IEEE},
pages = {13-16},
publisher = {IEEE} }

[BibTeX]
I. Subbiah, N. Abo Elneel, G. Varga, A. Ashok, D. Schroeder

Low power on-chip load tracking-zero compensation method for low dropout regulator

In Tagungsband "IEEE 13th International New Circuits and Systems Conference (NEWCAS 2015)", 2015, p. 1-4
NEWCAS 2015, Grenoble, 7.-10. June 2015

Abstract:
This paper describes a novel frequency compensation method for a low dropout regulator (LDO). The proposed load tracking-zero compensation circuit not only eliminates the need for a bulky external off-chip capacitor that is typically employed in conventional compensation techniques, but also consumes very low additional quiescent current of 7.5Î¼A that makes this method highly suitable for integrated SoC power management applications. It is demonstrated that this compensation technique, designed for the LDO in 130-nm CMOS technology, improves the stability and enhances the load regulation of the low dropout regulator.

BibTeX:
@inproceedings{Subbiah:NEWCAS:2015,
author = {I. Subbiah and N. Abo Elneel and G. Varga and A. Ashok and D. Schroeder},
title = {{L}ow power on-chip load tracking-zero compensation method for low dropout regulator},
year = {2015},
month = {06},
booktitle = {IEEE 13th International New Circuits and Systems Conference (NEWCAS 2015)},
note = {NEWCAS 2015, Grenoble, 7.-10. June 2015},
pages = {1-4} }

[Abstract] [BibTeX] [DOI]
K.-P. Hoffmann, L. Abu-Saleh, J.M. Cardona Audi, H. Dietl, H. Frank, A. Gail, E. Kaniusas, W.H. Krautschneider, S. Lewis, T. Meiners, R. Ruff, M. Russold, D. Schroeder, S. Westendorff

Implantierbares myoelektrisches Assistenzsystem zur intuitiven Steuerung einer bionischen Handprothese

Artikel in "Orthopädie-Technik", Nr. 5, p. 36--40, 2015

Abstract:
Das vorgestellte implantierbare myoelektrische Assistenzsystem zur intuitiven Steuerung einer bionischen Handprothese erfasst mit epimysial fixierten Elektroden selektiv Aktivitäten einzelner Muskeln. Diese Signale wurden im Tierexperiment über einen Zeitraum von mehr als neun Monaten erstmals vielkanalig drahtlos und in Echtzeit übertragen. Nach Analyse und Klassifikation lassen sie sich definierten Bewegungsmustern zuordnen. So können diese epimysialen Potenziale für eine intuitive Steuerung von Handprothesen herangezogen werden. Gegenwärtige Forschungen gelten der Entwicklung eines voll implantierbaren mikrotechnischen Assistenzsystems, das mit einem integrierten Stimulator auch ein sensorisches Feedback ermöglichen soll. Damit können wichtige Voraussetzungen für den Einsatz bionischer Handprothesen geschaffen werden.

BibTeX:
@article{Hoffmann:OT:2015,
author = {K.-P. Hoffmann and L. Abu-Saleh and J.M. Cardona Audi and H. Dietl and H. Frank and A. Gail and E. Kaniusas and W.H. Krautschneider and S. Lewis and T. Meiners and R. Ruff and M. Russold and D. Schroeder and S. Westendorff},
title = {{I}mplantierbares myoelektrisches {A}ssistenzsystem zur intuitiven {S}teuerung einer bionischen {H}andprothese},
year = {2015},
month = {05},
journal = {Orthop{\"a}die-Technik},
number = {5},
pages = {36--40} }

[Abstract] [BibTeX]
Andreas Bahr, Lait Abu-Saleh, Dietmar Schroeder, Wolfgang Krautschneider

16 Channel Neural Recording Mixed Signal ASIC

In Tagungsband "CDNLive EMEA 2015 Conference Proceedings", 2015
CDNLive EMEA 2015, Munich, 27.-29.04.2015

Abstract:
A mixed signal ASIC for biomedical signal acquisition - recording of ECoG signals in the cortex of mice - was developed. The ASIC consists of 16 analog channels, recording the signals with an input range of +/- 8mV. The signals are amplified by a low noise preamplifier, multiplexed to a post amplifier, digitized with a 10 bit SAR-ADC, and are accessible via a parallel digital output. The ASIC is designed in 130 nm CMOS technology, the area of the chip is 1.5 x 1.5 mm².

BibTeX:
@inproceedings{Bahr:CDNLive:2015,
author = {Andreas Bahr and Lait Abu-Saleh and Dietmar Schroeder and Wolfgang Krautschneider},
title = {16 {C}hannel {N}eural {R}ecording {M}ixed {S}ignal {A}{S}{I}{C}},
year = {2015},
month = {05},
booktitle = {CDNLive EMEA 2015 Conference Proceedings},
note = {CDNLive EMEA 2015, Munich, 27.-29.04.2015} }

[Abstract] [BibTeX]
Pragoti Pran Bora, Paola Vega-Castillo, Wolfgang Krautschneider

Designing a Broadband Cherry Hooper BJT amplifier for the 30-50 GHz range

In Tagungsband "17. Workshop Analogschaltungen", 2015
Darmstadt, 5.-6. March 2015

Abstract:
We present the design of a broadband amplifier to be integrated in a cell impedance measurement system for carrying out impedance measurements in the frequency range of 30-50 GHz. The amplifier is designed in a 130 nm SiGe:C HBT with a maximum transit frequency of 250 GHz and a maximum oscillation frequency of 300 GHz. To attain the wide frequency range of operation, the proposed design features two Cherry-Hooper gain stages, followed by two pairs of cascaded emitter followers as output buffer. Simulations show that the amplifier provides a gain of 20 dB in 30-44 GHz range with a band pass upper cut frequency of 50 GHz, and consumes a DC power of 125.1 mW operating at a supply voltage of 3.3 V.

BibTeX:
@inproceedings{Bora:Hooper:2015,
author = {Pragoti Pran Bora and Paola Vega-Castillo and Wolfgang Krautschneider},
title = {{D}esigning a {B}roadband {C}herry {H}ooper {B}{J}{T} amplifier for the 30-50 {G}{H}z range},
year = {2015},
month = {03},
booktitle = {17. Workshop Analogschaltungen},
note = {Darmstadt, 5.-6. March 2015} }

[Abstract] [BibTeX]
C. Spink, J. Buhk, B. John, W. Krautschneider, D. Schroeder, R. Fischbach, M. Braunschweig, G. Adam, A. Koops

Integriertes, kabelloses, 4-dimensionales Druckmonitoring nach Endovaskulärer Aortenreparatur (EVAR): Erste in vitro Ergebnisse im Gefäßmodel

Artikel in "Fortschr Röntgenstr 2015", vol. 187, p. RK_WISS401_6, 2015

Abstract:

BibTeX:
@article{evar2015,
author = {C. Spink and J. Buhk and B. John and W. Krautschneider and D. Schroeder and R. Fischbach and M. Braunschweig and G. Adam and A. Koops},
title = {{I}ntegriertes, kabelloses, 4-dimensionales {D}ruckmonitoring nach {E}ndovaskul{\"a}rer {A}ortenreparatur ({E}{V}{A}{R}): {E}rste in vitro {E}rgebnisse im {G}ef{\"a}{ss}model},
year = {2015},
journal = {Fortschr R{\"o}ntgenstr 2015},
pages = {RK_WISS401_6},
volume = {187} }

[BibTeX] [DOI]
Becker, F and Kuhl, M and Manoli, Y and Paul, O

Neuartiger Smart Tooth mit zehnfach höherer Kraftauflösung

Artikel in "MikroSystemTechnik 2015", 2015

Abstract:

BibTeX:
@article{becker2015neuartiger,
author = {Becker and F and Kuhl and M and Manoli and Y and Paul and O},
title = {{N}euartiger {S}mart {T}ooth mit zehnfach h{\"o}herer {K}raftaufl{\"o}sung},
year = {2015},
journal = {MikroSystemTechnik 2015},
publisher = {VDE VERLAG GmbH} }

[BibTeX]
Zimmermann, D and Moranz, C and Kuhl, M and Freund, I and Müller, C and Reinecke, H and Manoli, Y and Manoli, Y

On-Chip Brennstoffzellen als Energieversorgung für RFID Systeme

Artikel in "MikroSystemTechnik 2015", 2015

Abstract:

BibTeX:
@article{zimmermann2015chip,
author = {Zimmermann and D and Moranz and C and Kuhl and M and Freund and I and M{\"u}ller and C and Reinecke and H and Manoli and Y and Manoli and Y},
title = {{O}n-{C}hip {B}rennstoffzellen als {E}nergieversorgung f{\"u}r {R}{F}{I}{D} {S}ysteme},
year = {2015},
journal = {MikroSystemTechnik 2015},
publisher = {VDE VERLAG GmbH} }

[BibTeX]
Cota, Oscar F and Plachta, Dennis and Stieglitz, Thomas and Manoli, Yiannos and Kuhl, Matthias

In-vivo characterization of a 0.8--3 $mu$V RMS input-noise versatile CMOS pre-amplifier

In Tagungsband "2015 7th International IEEE/EMBS Conference on Neural Engineering (NER)" der IEEE, 2015, p. 458--461

Abstract:

BibTeX:
@inproceedings{cota2015vivo,
author = {Cota and Oscar F and Plachta and Dennis and Stieglitz and Thomas and Manoli and Yiannos and Kuhl and Matthias},
title = {{I}n-vivo characterization of a 0.8--3 $mu${V} {R}{M}{S} input-noise versatile {C}{M}{O}{S} pre-amplifier},
year = {2015},
booktitle = {2015 7th International IEEE/EMBS Conference on Neural Engineering (NER)},
organization = {IEEE},
pages = {458--461} }

[BibTeX]
Becker, F and Kuhl, M and Manoli, Y and Paul, O

Novel method to operate piezo-FET-based stress sensor offers tenfold increase in sensitivity

In Tagungsband "2015 IEEE SENSORS" der IEEE, 2015, p. 1--4

Abstract:

BibTeX:
@inproceedings{becker2015novel2,
author = {Becker and F and Kuhl and M and Manoli and Y and Paul and O},
title = {{N}ovel method to operate piezo-{F}{E}{T}-based stress sensor offers tenfold increase in sensitivity},
year = {2015},
booktitle = {2015 IEEE SENSORS},
organization = {IEEE},
pages = {1--4} }

[BibTeX]
Becker, F and Kuhl, M and Manoli, Y and Paul, O

Novel instrumented tooth with tenfold increase in force resolution

In Tagungsband "2015 Transducers-2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)" der IEEE, 2015, p. 1105--1108

Abstract:

BibTeX:
@inproceedings{becker2015novel,
author = {Becker and F and Kuhl and M and Manoli and Y and Paul and O},
title = {{N}ovel instrumented tooth with tenfold increase in force resolution},
year = {2015},
booktitle = {2015 Transducers-2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)},
organization = {IEEE},
pages = {1105--1108} }

[BibTeX]
C. Spink, B. John,W.H. Krautschneider, D. Schroeder, R. Fischbach, M. Braunschweig, J.-H. Buhk, G.B. Adam, A. Koops

Non-invasive 4-dimensional wireless aneurysm sac pressure monitoring after endovascular aortic aneurysm repair (EVAR): conceptional design of an integrated stent-graft and first in vitro results

In Tagungsband "ECR 2015 Book of Abstracts - B - Scientific Sessions and Late-Breaking Clinical Trials", 2015
European Congress of Radiology, 4–8 March 2015, Vienna, Austria

Abstract:

BibTeX:
@inproceedings{ecr2015,
author = {C. Spink and B. John,W.H. Krautschneider and D. Schroeder and R. Fischbach and M. Braunschweig and J.-H. Buhk and G.B. Adam and A. Koops},
title = {{N}on-invasive 4-dimensional wireless aneurysm sac pressure monitoring after endovascular aortic aneurysm repair ({E}{V}{A}{R}): conceptional design of an integrated stent-graft and first in vitro results},
year = {2015},
booktitle = {ECR 2015 Book of Abstracts - B - Scientific Sessions and Late-Breaking Clinical Trials},
note = {European Congress of Radiology, 4–8 March 2015, Vienna, Austria} }

[BibTeX] [DOI]
Kuhl, Matthias and Manoli, Yiannos

A 0.01 mm$^2$ Fully-Differential 2-Stage Amplifier with Reference-Free CMFB Using an Architecture-Switching-Scheme for Bandwidth Variation

In Tagungsband "Proc. of IEEE European Solid-State Circuits Conference", 2015

Abstract:

BibTeX:
@inproceedings{kuhl20150,
author = {Kuhl and Matthias and Manoli and Yiannos},
title = {{A} 0.01 mm$^2$ {F}ully-{D}ifferential 2-{S}tage {A}mplifier with {R}eference-{F}ree {C}{M}{F}{B} {U}sing an {A}rchitecture-{S}witching-{S}cheme for {B}andwidth {V}ariation},
year = {2015},
booktitle = {Proc. of IEEE European Solid-State Circuits Conference} }

[BibTeX]

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2014

M. Russold, S. Lewis, L. Abu-Saleh, J.M. Cardona Audi, M. Hahn, M. Schiestl, R. Ruff, D. Schroeder, B. Taghizadeh, S. Plümer, K.-P. Hoffmann, W. Krautschneider, A. Gail, T. Meiners, H. Lanmüller, O. Aszmann, H. Dietl

Development of a fully implantable EMG measurement system: Status report on the MyoPlant project

In Tagungsband "BMT 2014", 2014, p. S1085
Hannover, 8.-10.2014

Abstract:

BibTeX:
@inproceedings{Russold:BMT:2014,
author = {M. Russold and S. Lewis and L. Abu-Saleh and J.M. Cardona Audi and M. Hahn and M. Schiestl and R. Ruff and D. Schroeder and B. Taghizadeh and S. Pl{\"u}mer and K.-P. Hoffmann and W. Krautschneider and A. Gail and T. Meiners and H. Lanm{\"u}ller and O. Aszmann and H. Dietl},
title = {{D}evelopment of a fully implantable {E}{M}{G} measurement system: {S}tatus report on the {M}yo{P}lant project},
year = {2014},
month = {10},
booktitle = {BMT 2014},
note = {Hannover, 8.-10.2014},
pages = {S1085} }

[BibTeX]
Aljoscha Reinert, Jan Loitz, Dietmar Schroeder, Wolfgang Krautschneider

Forearm motor point characterization for smart electrode array shaping

In Tagungsband "BMT 2014", 2014, p. S1031
Hannover, 8.-10.10.2014

Abstract:

BibTeX:
@inproceedings{Reinert:BMT:2014,
author = {Aljoscha Reinert and Jan Loitz and Dietmar Schroeder and Wolfgang Krautschneider},
title = {{F}orearm motor point characterization for smart electrode array shaping},
year = {2014},
month = {10},
booktitle = {BMT 2014},
note = {Hannover, 8.-10.10.2014},
pages = {S1031} }

[BibTeX]
Iyappan Subbiah, Andreas Süss, Andrey Kravchenko, Bedrich Hosticka, Wolfgang Krautschneider

A Low Noise Saturation-Stacked Bandgap Reference for Image Sensor Applications

In Tagungsband "Proc. International Semiconductor Conference (CAS) 2014", 2014, p. 247-250
Sinaia, 13.-15.10.2014

Abstract:
Abstract: A novel architecture for a bandgap voltage reference is presented in this paper. The voltage reference, designed for image sensor applications, is primarily targeted for a low-noise operation along with other practical constraints such as high power supply rejection, temperature immunity and short start-up time. The analysis and operation of the circuit is discussed and the trade-offs involved in the implementation aspects are examined. The measurement results of the fabricated circuit in a 0.35-μm CMOS process show a noise voltage level of 450 nV/√Hz at 10 Hz, a temperature coefficient of 14 ppm/K and a PSRR of 52 dB.

BibTeX:
@inproceedings{Subbiah:Bandgap:2014,
author = {Iyappan Subbiah and Andreas S{\"u}ss and Andrey Kravchenko and Bedrich Hosticka and Wolfgang Krautschneider},
title = {{A} {L}ow {N}oise {S}aturation-{S}tacked {B}andgap {R}eference for {I}mage {S}ensor {A}pplications},
year = {2014},
month = {10},
booktitle = {Proc. International Semiconductor Conference (CAS) 2014},
note = {Sinaia, 13.-15.10.2014},
pages = {247-250} }

[Abstract] [BibTeX] [DOI]
C. Riggert and M. Ziegler and D. Schroeder and W.H. Krautschneider and H. Kohlstedt

MemFlash device: floating gate transistors as memristive devices for neuromorphic computing

Artikel in "Semiconductor Science and Technology", vol. 29, Nr. 10, p. 104011, 2014

Abstract:
Memristive devices are promising candidates for future non-volatile memory applications and mixed-signal circuits. In the field of neuromorphic engineering these devices are especially interesting to emulate neuronal functionality. Therefore, new materials and material combinations are currently investigated, which are often not compatible with Si-technology processes. The underlying mechanisms of the device often remain unclear and are paired with low device endurance and yield. These facts define the current most challenging development tasks towards a reliable memristive device technology. In this respect, the MemFlash concept is of particular interest. A MemFlash device results from a diode configuration wiring scheme of a floating gate transistor, which enables the persistent device resistance to be varied according to the history of the charge flow through the device. In this study, we investigate the scaling conditions of the floating gate oxide thickness with respect to possible applications in the field of neuromorphic engineering. We show that MemFlash cells exhibit essential features with respect to neuromorphic applications. In particular, cells with thin floating gate oxides show a limited synaptic weight growth together with low energy dissipation. MemFlash cells present an attractive alternative for state-of-art memresitive devices. The emulation of associative learning is discussed by implementing a single MemFlash cell in an analogue circuit.

BibTeX:
@article{Riggert:SST:2014,
author = {C. Riggert and M. Ziegler and D. Schroeder and W.H. Krautschneider and H. Kohlstedt},
title = {{M}em{F}lash device: floating gate transistors as memristive devices for neuromorphic computing},
year = {2014},
month = {09},
journal = {Semiconductor Science and Technology},
number = {10},
pages = {104011},
volume = {29} }

[Abstract] [BibTeX] [DOI]
Zhihao Pan and Schroeder, D. and Holland, S. and Krautschneider, W.H.

Understanding and Modeling of Diode Voltage Overshoots During Fast Transient ESD Events

Artikel in "IEEE Transactions on Electron Devices", vol. 61, Nr. 8, p. 2682-2689, 2014

Abstract:
Diodes in forward direction exhibit excellent ESD ruggedness and are thus widely used in both discrete and on-chip electro-static discharge (ESD) protection devices. Due to the conductivity modulation under an ESD stress, a transient voltage overshoot is observed at the beginning of a fast discharge event. Since the voltage overshoot can be harmful, understanding the origin of the overshoot is crucial to design optimized protection diodes. In this paper, it will be shown that existing models can result in much underestimated overshoot voltage, especially for diodes with a large lowly doped region. This can be attributed to the negligence of transient charge distribution in the lowly doped region. A new model that takes this effect into account as well as impact-ionization is presented.

BibTeX:
@article{Pan:TransED:2014,
author = {Zhihao Pan and Schroeder and D. and Holland and S. and Krautschneider and W.H.},
title = {{U}nderstanding and {M}odeling of {D}iode {V}oltage {O}vershoots {D}uring {F}ast {T}ransient {E}{S}{D} {E}vents},
year = {2014},
month = {08},
journal = {IEEE Transactions on Electron Devices},
number = {8},
pages = {2682-2689},
volume = {61} }

[Abstract] [BibTeX] [DOI]
M. Ziegler, D. Schroeder, W. Krautschneider, H. Kohlstedt

Memristive operation mode of floating gate transistors for neuromorphic applications

In Tagungsband "DPG-Frühjahrstagung" der Deutsche Physikalische Gesellschaft, 2014
Dresden, 30. März - 4. April 2014

Abstract:
A memristive operation mode of a single floating gate transistor (MemFlash-cell) is presented. To ensure the memristive operation mode, the three-terminal device is reduced to a two-terminal device in such a way that the device resistance varied accordingly to the charge flow through the device during source-drain voltage application. In particular, we provide evidence that the MemFlash-cell can be used to mimic synaptic functionality. Furthermore, based on Hebbian learning, a synaptic analytical expression for the learning rate of this device is derived. The experimental findings are theoretically supported by a capacitive based model. The presented two-terminal MemFlash-cell can be considered as a potential substitute for any memristive device in neuromorphic circuits, cross bar arrays, or reconfigurable logics, and is compatible with state-of-the-art Si-fabrication technology.

BibTeX:
@inproceedings{Ziegler:DPG:2014,
author = {M. Ziegler and D. Schroeder and W. Krautschneider and H. Kohlstedt},
title = {{M}emristive operation mode of floating gate transistors for neuromorphic applications},
year = {2014},
month = {04},
booktitle = {DPG-Fr{\"u}hjahrstagung},
note = {Dresden, 30. M{\"a}rz - 4. April 2014},
organization = {Deutsche Physikalische Gesellschaft} }

[Abstract] [BibTeX]
Kuhl, Matthias

Full-custom Analog-mixed Signal Components for CMOS Integrated Autonomous Microelectronic Systems: Anwendungsbezogene Analog-mixed Signal Komponenten Für CMOS-integrierte Autonome Mikroelektronische Systeme

Dissertation an der Universität, 2014

Abstract:

BibTeX:
@phdthesis{kuhl2014full,
author = {Kuhl and Matthias},
title = {{F}ull-custom {A}nalog-mixed {S}ignal {C}omponents for {C}{M}{O}{S} {I}ntegrated {A}utonomous {M}icroelectronic {S}ystems: {A}nwendungsbezogene {A}nalog-mixed {S}ignal {K}omponenten {F}{\"u}r {C}{M}{O}{S}-integrierte {A}utonome {M}ikroelektronische {S}ysteme},
year = {2014},
school = {Universit{\"a}t} }

[BibTeX]
Kuhl, Matthias

Full-Custom Analog/Mixed Signal Components for CMOS Integrated Autonomous Microelectronic Systems

, 2014

Abstract:

BibTeX:
@article{kuhlfull,
author = {Kuhl and Matthias},
title = {{F}ull-{C}ustom {A}nalog/{M}ixed {S}ignal {C}omponents for {C}{M}{O}{S} {I}ntegrated {A}utonomous {M}icroelectronic {S}ystems},
year = {2014} }

[BibTeX]
Muller, Natalie and Manoli, Yiannos and Kuhl, Matthias

A 1.6 nS, 16$mu$W, 30V Gm-C Integrator for Offset Voltage Monitoring in Neural Stimulators

In Tagungsband "IEEE International Symposium on Circuits and Systems", 2014, p. 2381--2384

Abstract:

BibTeX:
@inproceedings{muller20141,
author = {Muller and Natalie and Manoli and Yiannos and Kuhl and Matthias},
title = {{A} 1.6 n{S}, 16$mu${W}, 30{V} {G}m-{C} {I}ntegrator for {O}ffset {V}oltage {M}onitoring in {N}eural {S}timulators},
year = {2014},
booktitle = {IEEE International Symposium on Circuits and Systems},
pages = {2381--2384} }

[BibTeX]
Mario A. Meza-Cuevas, Dietmar Schroeder, Wolfgang H. Krautschneider

A scalable 64 channel neurostimulator based on a hybrid architecture of current steering DAC

In Tagungsband "Middle East Conference on Biomedical Engineering (MECBME 2014)", 2014, p. 111-114
Doha, Qatar, 17.-20.02.2014

Abstract:
In this work a 130 nm CMOS 64 channel neural stimulator is presented, which is scalable by connecting it in a daisy chain configuration,for applications requiring larger number of stimulation sites, as it is of interest for retinal implants with improved resolution. Each channel is composed of a hybrid architecture current steering 8 bit DAC, enabling the low power consumption and high channel integration on a small chip area. Besides, the DAC allows stimulating with several waveforms in order to save stimulation energy. An onchip module was implemented to control galvanostatic deposition of PEDOT on the electrodes. A schema is presented to avoid the residual charge due to cross electrode stimulation and process mismatch.

BibTeX:
@inproceedings{Meza:MECBME:2014,
author = {Mario A. Meza-Cuevas and Dietmar Schroeder and Wolfgang H. Krautschneider},
title = {{A} scalable 64 channel neurostimulator based on a hybrid architecture of current steering {D}{A}{C}},
year = {2014},
booktitle = {Middle East Conference on Biomedical Engineering (MECBME 2014)},
note = {Doha, Qatar, 17.-20.02.2014},
pages = {111-114} }

[Abstract] [BibTeX] [DOI]

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2013

Diego Lujan Villarreal, Dietmar Schroeder, and Wolfgang H. Krautschneider

Equivalent Circuit Model to Simulate Neurostimulation by using Different Waveforms

In Tagungsband "ICT Open 2013", 2013
Eindhoven, November 27-28, 2013

Abstract:

BibTeX:
@inproceedings{Lujan:Waveforms:2013,
author = {Diego Lujan Villarreal and Dietmar Schroeder and and Wolfgang H. Krautschneider},
title = {{E}quivalent {C}ircuit {M}odel to {S}imulate {N}eurostimulation by using {D}ifferent {W}aveforms},
year = {2013},
month = {11},
booktitle = {ICT Open 2013},
note = {Eindhoven, November 27-28, 2013} }

[BibTeX]
Lewis, S. and Russold, M. and Dietl, H. and Ruff, R. and Cardona, J.M. and Hoffmann, K.-P. and Abu-Saleh, L. and Schroeder, D. and Krautschneider, W.H. and Westendorff, S. and Gail, A. and Meiners, T. and Kaniusas, E.

Fully Implantable Multi-Channel Measurement System for Acquisition of Muscle Activity

Artikel in "IEEE Transactions on Instrumentation and Measurement", vol. 62, Nr. 7, p. 1972-1981, 2013

Abstract:
This paper presents intramuscular electromyogram (EMG) signals obtained with a fully implantable measurement system that were recorded during goal directed arm movements. In a first implantation thin film electrodes were epimysially implanted on the deltoideus of a rhesus macaque and the encapsulation process was monitored by impedance measurements. Increase of impedance reached a constant level after four weeks indicating a complete encapsulation of electrodes. EMG recorded with these electrodes yielded a signal-to-noise ratio of about 80 dB at 200 Hz. The EMG recorded during goal-directed arm movements showed a high similarity to movements in the same direction and at the same time presented clear differences between different movement directions intime domain. Six classifiers and seven time and frequency domain features were investigated with the aim of discriminating the direction of arm movement from EMG signals. Reliable recognition of arm movementswas achieved for a subset of the movements under investigation only. A second implantation of the whole measurement system for nine weeks demonstrated simple handling during surgery and good biotolerance in the animals.

BibTeX:
@article{Lewis:IEEETransIM:2013,
author = {Lewis and S. and Russold and M. and Dietl and H. and Ruff and R. and Cardona and J.M. and Hoffmann and K.-P. and Abu-Saleh and L. and Schroeder and D. and Krautschneider and W.H. and Westendorff and S. and Gail and A. and Meiners and T. and Kaniusas and E.},
title = {{F}ully {I}mplantable {M}ulti-{C}hannel {M}easurement {S}ystem for {A}cquisition of {M}uscle {A}ctivity},
year = {2013},
month = {07},
journal = {IEEE Transactions on Instrumentation and Measurement},
number = {7},
pages = {1972-1981},
volume = {62} }

[Abstract] [BibTeX] [DOI]
A. Koops, B.T. Bradford, D. Schroeder, W.H. Krautschneider, G. Adam, J.H. Buhk

An integrated stent-graft for noninvasive 4-dimensional aneurysm sac pressure monitoring after endovascular aortic aneurysm repair (EVAR): First in vivo results in a porcine model

Artikel in "Journal of Vascular and Interventional Radiology", vol. 24, Nr. 4, p. S176, 2013

Abstract:

BibTeX:
@article{Koops:JVIR:2013,
author = {A. Koops and B.T. Bradford and D. Schroeder and W.H. Krautschneider and G. Adam and J.H. Buhk},
title = {{A}n integrated stent-graft for noninvasive 4-dimensional aneurysm sac pressure monitoring after endovascular aortic aneurysm repair ({E}{V}{A}{R}): {F}irst in vivo results in a porcine model},
year = {2013},
month = {04},
journal = {Journal of Vascular and Interventional Radiology},
number = {4},
pages = {S176},
volume = {24} }

[BibTeX] [DOI]
B. Bradford, D. Schroeder, W. Krautschneider

A gain boosted folded cascode using telescopic boosting amplifiers with switched capacitor input level shifters

In Tagungsband "Biomedical Engineering (BioMed 2013)", 2013, p. 89-96
February 13-15, 2013 Innsbruck, Austria

Abstract:
This paper describes a single stage fully differential folded cascode operational transconductance amplifier (OTA) with fully differential gain boosting amplifiers designed in 1.2 VDC 130nm CMOS process technology. The amplifier is the driver for an analog to digital converter (ADC) of a blood pressure sensing medical implant which uses wireless power transmission as its energy source. The medical implant’s design specifications require an amplifier with a an output voltage swing of ±850mV, and a closed loop settling time of 125μs to an accuracy of 0.025% while driving a differential load of 5pF with a feedback factor of F = 1/20, all with an absolute minimum of power consumption. The gain boosting amplifiers are telescopic cascoded amplifiers, which, by their design, have an input and output common mode voltage relationship which is opposite to what is needed for a gain boosted cascode configuration. To correct for this, a method for DC shifting the amplifier’s input voltage using a switched capacitor network is presented.

BibTeX:
@inproceedings{Bradford:BIOMED:2013,
author = {B. Bradford and D. Schroeder and W. Krautschneider},
title = {{A} gain boosted folded cascode using telescopic boosting amplifiers with switched capacitor input level shifters},
year = {2013},
month = {02},
booktitle = {Biomedical Engineering (BioMed 2013)},
note = {February 13-15, 2013 Innsbruck, Austria},
pages = {89-96} }

[Abstract] [BibTeX] [DOI]
Ricardo Starbird, Wolfgang Krautschneider, Grit Blume, and Wolfgang Bauhofer

In Vitro Biocompatibility Study and Electrical Properties of the PEDOT, PEDOT Collagen-Coat, PEDOT Nanotubes and PEDOT Aerogels for Neural Electrodes

In Tagungsband "Biomedical Engineering (BioMed 2013)", 2013
February 13-15, 2013 Innsbruck, Austria

Abstract:
The aim of this study is to evaluate the cytotoxicity of Poly(3,4-ethylenedioxythiophene) (PEDOT), PEDOT-collagen and PEDOT nanostructured coatings for neural electrodes. Incorporation of cell growth factors and the structuration of supporting material are two strategies to improve cell adhesion and biocompatibility in order to produce better and more specific neural implants. PEDOT coat, PEDOT-collagen coat, PEDOT nanotubes and PEDOT aerogel were tested for biocompability using the standard ISO 10993-5. PEDOT and PEDOT-Collagen coats were deposited via galvanostatic electropolymerization from a NaPSS micellar dispersion. In addition PEDOT nanotubes were obtained by hard polycarbonate template and PEDOT aerogels were chemically produced through a soft starch template. PEDOT samples were studied for biocompatibility, characterized by LCRmeter and Scanning electron microscopy (SEM). Biocompatibility test verified the absence of cytotoxic effects in all the PEDOT samples.

BibTeX:
@inproceedings{STARBIRD:BIOMED:2013,
author = {Ricardo Starbird and Wolfgang Krautschneider and Grit Blume and and Wolfgang Bauhofer},
title = {{I}n {V}itro {B}iocompatibility {S}tudy and {E}lectrical {P}roperties of the {P}{E}{D}{O}{T}, {P}{E}{D}{O}{T} {C}ollagen-{C}oat, {P}{E}{D}{O}{T} {N}anotubes and {P}{E}{D}{O}{T} {A}erogels for {N}eural {E}lectrodes},
year = {2013},
month = {02},
booktitle = {Biomedical Engineering (BioMed 2013)},
note = {February 13-15, 2013 Innsbruck, Austria} }

[Abstract] [BibTeX] [DOI]
B.T. Bradford, W. Krautschneider, D. Schroeder

Design of a Switched Capacitor Fully Differential Capacitive Pressure Sensor with Unbalanced Parasitic Input Capacitances in 130 nm CMOS Technology

In Tagungsband "Proceedings of the International Conference on Biomedical Electronics and Devices (BIODEVICES 2013)", Verlag SCITEPRESS, 2013, Nr. 38, p. 137-142
Barcelona, Spain, 11-14 February, 2013

Abstract:
A switched capacitor amplifier for measuring a micro-machined capacitive pressure sensor using correlated double sampling has been designed in 130nm CMOS technology. The switched capacitor amplifier design uses a combination of correlated double sampling, input offset cancellation, and output offset cancellation to help reject 1/f noise and DC offset mismatch. The noise of the system has been analyzed and optimized for switched capacitor correlated double sampling operation, and a method for sizing the operational transconductance amplifier (OTA) components according to the system noise and accuracy requirements is presented. The entire sensor sampling system achieves 0.75 mmHg resolution at 4 ksps with a total current consumption less than 3 μA when used to measure a commercially available capacitive pressure sensor.

BibTeX:
@inproceedings{Bradford:BIODEVICES:2013,
author = {B.T. Bradford and W. Krautschneider and D. Schroeder},
title = {{D}esign of a {S}witched {C}apacitor {F}ully {D}ifferential {C}apacitive {P}ressure {S}ensor with {U}nbalanced {P}arasitic {I}nput {C}apacitances in 130 nm {C}{M}{O}{S} {T}echnology},
year = {2013},
month = {02},
booktitle = {Proceedings of the International Conference on Biomedical Electronics and Devices (BIODEVICES 2013)},
note = {Barcelona, Spain, 11-14 February, 2013},
number = {38},
pages = {137-142},
publisher = {SCITEPRESS} }

[Abstract] [BibTeX]
J.M. Tomasik, W. Galjan, K.M. Hafkemeyer, D. Schroeder, W.H. Krautschneider

A configurable integrated circuit for biomedical signal acquisition

In Tagungsband "Biomedical Engineering Systems and Technologies (BIOSTEC 2011)", Verlag Springer, 2013, vol. 273, p. 43-56
4th International Joint Conference, BIOSTEC 2011, Rome, Italy, 26-29 January 2011, Revised Selected Papers

Abstract:

BibTeX:
@inproceedings{Tomasik:Springer:2013,
author = {J.M. Tomasik and W. Galjan and K.M. Hafkemeyer and D. Schroeder and W.H. Krautschneider},
title = {{A} configurable integrated circuit for biomedical signal acquisition},
year = {2013},
month = {01},
booktitle = {Biomedical Engineering Systems and Technologies (BIOSTEC 2011)},
note = {4th International Joint Conference, BIOSTEC 2011, Rome, Italy, 26-29 January 2011, Revised Selected Papers},
pages = {43-56},
publisher = {Springer},
volume = {273} }

[BibTeX] [DOI]
Kuhl, Matthias and Gieschke, Pascal and Rossbach, Daniel and Hilzensauer, Sascha A and Panchaphongsaphak, Thanapon and Ruther, Patrick and Lapatki, Bernd G and Paul, Oliver and Manoli, Yiannos

A wireless stress mapping system for orthodontic brackets using CMOS integrated sensors

Artikel in "IEEE journal of solid-state circuits", vol. 48, Nr. 9, p. 2191--2202, 2013

Abstract:

BibTeX:
@article{kuhl2013wireless,
author = {Kuhl and Matthias and Gieschke and Pascal and Rossbach and Daniel and Hilzensauer and Sascha A and Panchaphongsaphak and Thanapon and Ruther and Patrick and Lapatki and Bernd G and Paul and Oliver and Manoli and Yiannos},
title = {{A} wireless stress mapping system for orthodontic brackets using {C}{M}{O}{S} integrated sensors},
year = {2013},
journal = {IEEE journal of solid-state circuits},
number = {9},
pages = {2191--2202},
publisher = {IEEE},
volume = {48} }

[BibTeX]
Moranz, C and Kuhl, M and Zimmermann, D and Becker, J and Müller, C and Reinecke, H and Manoli, Y

CMOS integrierte Spannungsversorgung basierend auf Mikro-Brennstoffzellen

Artikel in "Mikrosystemtechnik 2013", 2013

Abstract:

BibTeX:
@article{moranz2013cmos,
author = {Moranz and C and Kuhl and M and Zimmermann and D and Becker and J and M{\"u}ller and C and Reinecke and H and Manoli and Y},
title = {{C}{M}{O}{S} integrierte {S}pannungsversorgung basierend auf {M}ikro-{B}rennstoffzellen},
year = {2013},
journal = {Mikrosystemtechnik 2013},
publisher = {VDE VERLAG GmbH} }

[BibTeX]
Kuhl, Matthias and Gieschke, Pascal and Paul, Oliver and Manoli, Yiannos

Ein CMOS-Stresskartierungssystem mit 24 FET-basierten Stresssensoren für intelligente kieferorthopädische Brackets

Artikel in "Mikrosystemtechnik 2013", 2013

Abstract:

BibTeX:
@article{kuhl2013cmos,
author = {Kuhl and Matthias and Gieschke and Pascal and Paul and Oliver and Manoli and Yiannos},
title = {{E}in {C}{M}{O}{S}-{S}tresskartierungssystem mit 24 {F}{E}{T}-basierten {S}tresssensoren f{\"u}r intelligente kieferorthop{\"a}dische {B}rackets},
year = {2013},
journal = {Mikrosystemtechnik 2013},
publisher = {VDE VERLAG GmbH} }

[BibTeX]
Nashwa Abo Elneel, Dietmar Schroeder, Wolfgang Krautschneider

Programmable 2-channel ASIC for portable long-term monitoring of biomedical signals

Artikel in "Activity Report 2012, Europractice IC Service", p. 16-17, 2013

Abstract:

BibTeX:
@article{Europractice12,
author = {Nashwa Abo Elneel and Dietmar Schroeder and Wolfgang Krautschneider},
title = {{P}rogrammable 2-channel {A}{S}{I}{C} for portable long-term monitoring of biomedical signals},
year = {2013},
journal = {Activity Report 2012, Europractice IC Service},
pages = {16-17} }

[BibTeX]
Rajeev Ranjan, Bryce Bradford

Impact of process scaling on analog design performance from 350nm to 40nm

In Tagungsband "4th IEEE Germany Student Conference Proceedings", 2013
Hamburg , 6th-7th june 2013

Abstract:

BibTeX:
@inproceedings{Ranjan:IEEE:2013,
author = {Rajeev Ranjan and Bryce Bradford},
title = {{I}mpact of process scaling on analog design performance from 350nm to 40nm},
year = {2013},
booktitle = {4th IEEE Germany Student Conference Proceedings},
note = {Hamburg , 6th-7th june 2013} }

[BibTeX]

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2012

M. Ziegler, M. Oberländer, D. Schroeder, W.H. Krautschneider, H. Kohlstedt

Memristive operation mode of floating gate transistors: A two-terminal MemFlash-cell

Artikel in "Applied Physics Letters", vol. 101, p. 263504, 2012

Abstract:
A memristive operation mode of a single floating gate transistor is presented. The device resistance varied accordingly to the charge flow through the device. Hysteretic current-voltages including a resistance storage capability were observed. These experimental findings are theoretically supported by a capacitive based model. The presented two-terminal MemFlash-cell can be considered as a potential substitute for any memristive device (especially for reconfigurable logic, cross-bar arrays, and neuromorphic circuits) and is basically compatible with current Si-fabrication technology. The obvious trade-off between a memristive device based on a state-of-the-art silicon process technology and power consumption concerns will be discussed.

BibTeX:
@article{Ziegler:APL:2012,
author = {M. Ziegler and M. Oberl{\"a}nder and D. Schroeder and W.H. Krautschneider and H. Kohlstedt},
title = {{M}emristive operation mode of floating gate transistors: {A} two-terminal {M}em{F}lash-cell},
year = {2012},
month = {12},
journal = {Applied Physics Letters},
pages = {263504},
volume = {101} }

[Abstract] [BibTeX] [DOI]
Farzad Hosseini, Dietmar Schroeder, Wolfgang H. Krautschneider

Capacitive sensors for detection of the movement artifacts in active capacitive electrocardiography electrodes

In Tagungsband "BMEiCON 2012", 2012
BMEiCON 2012, Ubon Ratchathani, Thailand, 5-7 Dec 2012

Abstract:
A capacitive sensor system is integrated into an active capacitive ECG electrode. This system provides a signal, which is correlated with movement artifacts during ECG signal acquisition, and can be used as reference signal in an adaptive filter.

BibTeX:
@inproceedings{Hosseini:BMEiCON:2012,
author = {Farzad Hosseini and Dietmar Schroeder and Wolfgang H. Krautschneider},
title = {{C}apacitive sensors for detection of the movement artifacts in active capacitive electrocardiography electrodes},
year = {2012},
month = {12},
booktitle = {BMEiCON 2012},
note = {BMEiCON 2012, Ubon Ratchathani, Thailand, 5-7 Dec 2012} }

[Abstract] [BibTeX]
Ricardo Starbird, Wolfgang Bauhofer, Mario A. Meza-Cuevas and Wolfgang H. Krautschneider

Effect of experimental factors on the properties of PEDOT-NaPSS galvanostatically deposited from an aqueous micellar media for invasive electrodes

In Tagungsband "BMEiCON 2012", 2012
BMEiCON 2012, Ubon Ratchathani, Thailand, 5-7 Dec 2012

Abstract:

BibTeX:
@inproceedings{Starbird:BMEiCON:2012,
author = {Ricardo Starbird and Wolfgang Bauhofer and Mario A. Meza-Cuevas and Wolfgang H. Krautschneider},
title = {{E}ffect of experimental factors on the properties of {P}{E}{D}{O}{T}-{N}a{P}{S}{S} galvanostatically deposited from an aqueous micellar media for invasive electrodes},
year = {2012},
month = {12},
booktitle = {BMEiCON 2012},
note = {BMEiCON 2012, Ubon Ratchathani, Thailand, 5-7 Dec 2012} }

[BibTeX] [DOI]
Mario A. Meza-Cuevas, Karthik Ramesh, Dietmar Schroeder and Wolfgang H. Krautschneider

Hybrid architecture of a DAC for neurostimulation

In Tagungsband "BMEiCON 2012", 2012
BMEiCON 2012, Ubon Ratchathani, Thailand, 5-7 Dec 2012

Abstract:
Electrical Neurostimulation has been effective for treating and reducing symptoms of neurological diseases, for alleviating some types of chronic pain and for restoring sensory or neuromuscular deficits. Because of the energy and size limitation on fully implantable devices, it is important to keep devices small and at low power. It was already demonstrated that non-rectangular waveforms provide a more energy-efficient neural stimulation. In this article is shown how a hybrid architecture of current steering DAC is suitable to this application, because of its specifications: the ability to convert several waveforms directly from digital to analog current signals, low power consumption, small chip area requirement, the capability of sharing common stages and also for its simplicity. An ASIC has been developed composed of four stimulator channels, capable of driving several current waveforms. The design is implemented in 130 nm CMOS technology.

BibTeX:
@inproceedings{Meza:BMEiCON:2012,
author = {Mario A. Meza-Cuevas and Karthik Ramesh and Dietmar Schroeder and Wolfgang H. Krautschneider},
title = {{H}ybrid architecture of a {D}{A}{C} for neurostimulation},
year = {2012},
month = {12},
booktitle = {BMEiCON 2012},
note = {BMEiCON 2012, Ubon Ratchathani, Thailand, 5-7 Dec 2012} }

[Abstract] [BibTeX]
B.T. Bradford, W. Krautschneider, D. Schroeder

A 10 bit Fully Differential SAR ADC in 130nm CMOS Technology with Variable Offset Comparator Trimming

In Tagungsband "ICT.Open 2012", 2012
Rotterdam, 22-23 October 2012

Abstract:
A 10 bit fully differential input SAR ADC has been developed as part of a micro-machined capacitive pressure sensor measurement system for a wireless medical implant.

BibTeX:
@inproceedings{Bradford_ICTOpen:2012,
author = {B.T. Bradford and W. Krautschneider and D. Schroeder},
title = {{A} 10 bit {F}ully {D}ifferential {S}{A}{R} {A}{D}{C} in 130nm {C}{M}{O}{S} {T}echnology
with {V}ariable {O}ffset {C}omparator {T}rimming},
year = {2012},
month = {10},
booktitle = {ICT.Open 2012},
note = {Rotterdam, 22-23 October 2012} }

[Abstract] [BibTeX]
Farzad Hosseini, Dietmar Schroeder, Wolfgang H. Krautschneider

Digitally controlled analog frontend for capacitive ECG measurements

In Tagungsband "ICT.Open 2012", 2012
Rotterdam, 22-23 October 2012

Abstract:
In this work we describe a capacitive ECG system, which is based on an ASIC designed in our institute. Here we will focus on the analog frontend of the system and specify and verify the optimal design performance to fulfil the required task.

BibTeX:
@inproceedings{Hosseini:ICTOpen:2012,
author = {Farzad Hosseini and Dietmar Schroeder and Wolfgang H. Krautschneider},
title = {{D}igitally controlled analog frontend for capacitive {E}{C}{G} measurements},
year = {2012},
month = {10},
booktitle = {ICT.Open 2012},
note = {Rotterdam, 22-23 October 2012} }

[Abstract] [BibTeX]
Diego Lujan Villarreal, Dietmar Schroeder and Wolfgang H. Krautschneider

Equivalent circuit model to simulate the neuromuscular electrical stimulation

In Tagungsband "ICT.Open 2012", 2012
Rotterdam, 22-23 October 2012

Abstract:
In this study, an equivalent circuit model (ECM) to simulate the Neuromuscular Electrical Stimulation (NMES) has been developed. The ECM was built from the transcutaneous electrodes to the cell membrane to simulate the nerve stimulation with biphasic rectangular waveform. The model was developed in a series of ‘tissue subsystems’, hence these can be treated independently. The frequency and current density dependency of the electrode-electrolyte gel-skin interfaces and of the tissues were considered. The ECM was used to simulate in PSpice 6 strength–duration curves obtained by experimental transcutaneous stimulation of the extensor muscles in the forearm of one subject using two fully gelled electrodes of size 45x80 mm². To ensure the muscle contraction, a three axial accelerometer was placed on the proximal phalange of the middle finger. The mean voltage response in the stimulation experiments was compared with ECM simulations with the waveform mentioned. The energy dissipation in the human tissue layers was investigated using the ECM. The correlation coefficient was used to evaluate quantitatively the agreement between simulations and experiments.

BibTeX:
@inproceedings{Lujan:ICTOpen:2012,
author = {Diego Lujan Villarreal and Dietmar Schroeder and Wolfgang H. Krautschneider},
title = {{E}quivalent circuit model to simulate the neuromuscular electrical stimulation},
year = {2012},
month = {10},
booktitle = {ICT.Open 2012},
note = {Rotterdam, 22-23 October 2012} }

[Abstract] [BibTeX]
Mario A. Meza-Cuevas, Alexander Gummenscheimer, Dietmar Schroeder and Wolfgang H. Krautschneider

Portable Neuromuscular Electrical Stimulator

In Tagungsband "ICT.Open 2012", 2012
Rotterdam, Netherlands, 22-23 October 2012

Abstract:
Neuromuscular electrical stimulation is useful for restoring the movement of extremities in the treatment of some neurological disorders. A portable neuromuscular stimulator was developed for rehabilitation, Functional Electrical Stimulation (FNS) and for experimentation. The device is battery powered and can be controlled wirelessly. The adjustable current output is one of the advantages of this stimulator, because it can deliver several waveforms and it is possible to change every parameter on the stimulation signal. Power consumption, high selectivity, patient comfort and portability are important terms for medical electronic devices. Several setups were developed for the neuromuscular stimulator in order to perform different experiments.

BibTeX:
@inproceedings{Meza:ICTOpen:2012,
author = {Mario A. Meza-Cuevas and Alexander Gummenscheimer and Dietmar Schroeder and Wolfgang H. Krautschneider},
title = {{P}ortable {N}euromuscular {E}lectrical {S}timulator},
year = {2012},
month = {10},
booktitle = {ICT.Open 2012},
note = {Rotterdam, Netherlands, 22-23 October 2012} }

[Abstract] [BibTeX]
Mario A. Meza-Cuevas, Dietmar Schroeder and Wolfgang H. Krautschneider

Neuromuscular Electrical Stimulation Using Different Waveforms: Properties comparison by applying single pulses

In Tagungsband "International Conference on BioMedical Enginering and Informatics 2012", 2012, p. 840-845
BMEI 2012, Chongqing, China, 16-18 Oct 2012

Abstract:
Electrical Neurostimulation is useful in several medical therapies, for the treatment of neuromuscular deficits and for restoring physiological and sensory functions. Fully implantable devices are preferable in order to reach high selectivity and to give comfort to the patient. However, smaller devices bring more challenges regarding fabrication techniques and technology compliances, and power consumption is an important issue. In this study we analyze the use of different waveforms for performing neuromuscular stimulation, and we show how different waveforms require less energy to produce the same muscle reaction.

BibTeX:
@inproceedings{Meza:BMEI:2012,
author = {Mario A. Meza-Cuevas and Dietmar Schroeder and Wolfgang H. Krautschneider},
title = {{N}euromuscular {E}lectrical {S}timulation {U}sing {D}ifferent {W}aveforms: {P}roperties comparison by applying single pulses},
year = {2012},
month = {10},
booktitle = {International Conference on BioMedical Enginering and Informatics 2012},
note = {BMEI 2012, Chongqing, China, 16-18 Oct 2012},
pages = {840-845} }

[Abstract] [BibTeX] [DOI]
B.T. Bradford, W. Krautschneider, D. Schroeder

Wireless power transmission for powering medical implants situated in an abdominal aortic aneurysm

In Tagungsband "46th DGBMT Annual Conference (BMT 2012)", 2012, p. 887-890
BMT 2012, Jena, 16.-19. Sept. 2012

Abstract:
This paper will describe a wireless power transmission system which has been used during in vivo testing to power a blood pressure sensing implant located inside the abdominal aorta of a 100 kg swine. Wireless power transmission is accomplished using an external power sender which is magnetically coupled to an RF energy harvester block which has been integrated into the medical implant’s system package. The power sender is a class E amplifier which drives a wire loop antenna at 4 MHz, and the power receiver uses a ferro-magnetic core in an LC resonant circuit coupled to a Schottky diode charge pump rectifier followed by a DC voltage regulator.

BibTeX:
@inproceedings{Bradford:BMT:2012,
author = {B.T. Bradford and W. Krautschneider and D. Schroeder},
title = {{W}ireless power transmission for powering medical implants situated in an abdominal aortic aneurysm},
year = {2012},
month = {09},
booktitle = {46th DGBMT Annual Conference (BMT 2012)},
note = {BMT 2012, Jena, 16.-19. Sept. 2012},
pages = {887-890} }

[Abstract] [BibTeX] [DOI]
K.M. Hafkemeyer, A. Domdey, D. Schroeder, W.H. Krautschneider

Array Test Structures for Gate Dielectric Integrity Measurements and Statistics

Artikel in "IEEE Transactions on Semiconductor Manufacturing", vol. 25, Nr. 2, p. 130 -135, 2012

Abstract:
An array test structure for highly parallelized stressing and measurements of ultrathin MOS gate dielectrics is presented. The array test structure consisting of thousands of NMOS devices under test (DUTs) provides a large and significant statistical base for analysis of dielectric breakdown and the stress induced degradation of transistor parameters. The test array has been fabricated in a standard mixed-mode 130 nm CMOS technology. As such technologies offer both thin and thick gate dielectrics for MOS transistors, different gate dielectric thicknesses have been chosen for DUTs and digital control logic which gives the possibility to stress the DUTs with high gate voltages and prevent the control logic from degradation.

BibTeX:
@article{Hafkemeyer:TransSM:2012,
author = {K.M. Hafkemeyer and A. Domdey and D. Schroeder and W.H. Krautschneider},
title = {{A}rray {T}est {S}tructures for {G}ate {D}ielectric {I}ntegrity {M}easurements and {S}tatistics},
year = {2012},
month = {05},
journal = {IEEE Transactions on Semiconductor Manufacturing},
number = {2},
pages = {130 -135},
volume = {25} }

[Abstract] [BibTeX] [DOI]
S. Lewis, M.F. Russold, H. Dietl, R. Ruff, T. Doerge, K.-P. Hoffmann, L. Abu-Saleh, D. Schroeder, W. Krautschneider, S. Westendorff, A. Gail, T. Meiners, and E. Kaniusas

Acquisition of muscle activity with a fully implantable multi-channel measurement system

In Tagungsband "IEEE International Instrumentation and Measurement Technology Conference (I2MTC)", 2012, p. 996 -999
Graz, 13.-16. May, 2012

Abstract:
This work presents intramuscular measurements of the electromyogram (EMG) during goal directed arm movements. Thin film electrode arrays were epimysially implanted on the deltoideus of a rhesus macaque and the encapsulation process was monitored by impedance measurements. Increase of impedance plateaued after four weeks indicating a complete incorporation of electrodes. EMG recorded with these electrodes yielded a signal to noise ratio of about 80 dB at 200 Hz. The EMG recorded during goal directed arm movements showed high similarity amongst movements in the same direction while presenting clear differences between different movement directions. A second implantation of the whole measurement system for nine weeks proved good handling and biotolerance.

BibTeX:
@inproceedings{Lewis:I2MTC:2012,
author = {S. Lewis and M.F. Russold and H. Dietl and R. Ruff and T. Doerge and K.-P. Hoffmann and L. Abu-Saleh and D. Schroeder and W. Krautschneider and S. Westendorff and A. Gail and T. Meiners and and E. Kaniusas},
title = {{A}cquisition of muscle activity with a fully implantable multi-channel measurement system},
year = {2012},
month = {05},
booktitle = {IEEE International Instrumentation and Measurement Technology Conference (I2MTC)},
note = {Graz, 13.-16. May, 2012},
pages = {996 -999} }

[Abstract] [BibTeX] [DOI]
Kuhl, Matthias and Müller, Claas and Manoli, Yiannos and Erdler, Gilbert

Electrical voltage supply

Verlag Google Patents, mar 2012
US Patent 8,129,861

Abstract:

BibTeX:
@misc{kuhl2012electrical,
author = {Kuhl and Matthias and M{\"u}ller and Claas and Manoli and Yiannos and Erdler and Gilbert},
title = {{E}lectrical voltage supply},
year = {2012},
month = {03},
note = {US Patent 8,129,861},
publisher = {Google Patents} }

[BibTeX]
Kuhl, Matthias and Müller, Claas and Manoli, Yiannos and Erdler, Gilbert

Electrical voltage supply

mar 2012
US Patent 8,129,861

Abstract:

BibTeX:
@misc{kuhl2012electrical2,
author = {Kuhl and Matthias and M{\"u}ller and Claas and Manoli and Yiannos and Erdler and Gilbert},
title = {{E}lectrical voltage supply},
year = {2012},
month = {03},
note = {US Patent 8,129,861} }

[BibTeX]
Lait Abu-Saleh, Wjatscheslaw Galjan, Jakob Tomasik,Dietmar Schroeder, Wolfgang H. Krautschneider

A 130nm ASIC for EMG Signal Acquisition to Control a Hand Prosthetic

In Tagungsband "BIODEVICES 2012", 2012, p. 149-153
BIODEVICES 2012, Vilamoura, Portugal, 1.-4. February 2012

Abstract:
A mixed-signal chip in 130nm Technology is described. The chip acquires EMG signals from five differential inputs. The signals are amplified, multiplexed and digitized inside the developed chip. The ASIC is optimised for low power and low noise and is intended for application in medical implants. Furthermore, the chip provides a configuration option for several parameters for the analogue part of the chip. The chip has been tested by recording EMG signals from implanted myo-electrodes.

BibTeX:
@inproceedings{AbuSaleh:MyoC1Biodevices:2012,
author = {Lait Abu-Saleh and Wjatscheslaw Galjan and Jakob Tomasik,Dietmar Schroeder and Wolfgang H. Krautschneider},
title = {{A} 130nm {A}{S}{I}{C} for {E}{M}{G} {S}ignal {A}cquisition to {C}ontrol a {H}and {P}rosthetic},
year = {2012},
month = {02},
booktitle = {BIODEVICES 2012},
note = {BIODEVICES 2012, Vilamoura, Portugal, 1.-4. February 2012},
pages = {149-153} }

[Abstract] [BibTeX] [DOI]
Mario A. Meza Cuevas, Lait Abu-Saleh, Dietmar Schroeder, Wolfgang Krautschneider

Toward the optimal architecture of an ASIC for neurostimulation

In Tagungsband "BIODEVICES 2012", 2012, p. 179-184
BIODEVICES 2012, Vilamoura, Portugal, 1-4. February 2012

Abstract:
Electrical Neurostimulation has been effective in several medical therapies and also for restoring physiological, sensory and neuromuscular deficits. The rectangular pulse waveform has been used as a standard shape for neural stimulation. However, it has been shown that non-rectangular waveforms provide a more energy-efficient neural stimulation. An ASIC has been developed composed of a stimulator, capable of driving several current waveforms, and an analog channel for biosignal acquisition. The design is implemented in 130 nm / 1.2 V CMOS technology, requiring a silicon area of 0.696 mm2. Experimental results show that the stimulator can generate analog signals from a digital input of 8 bits. The output stage can drive up to ±9.8 μA, with a DNL and INL of 0.47 and 1.05 LSB, respectively. Its SFDR is 50.2 dB. And it consumes a maximum of 128.12 μW. The analog input channel presents a power consumption of 140 μW, a gain of 52.2 dB, a bandwidth of 0.5 – 1130 Hz and 10 μVrms of noise.

BibTeX:
@inproceedings{Meza:BIOSTEC:2012,
author = {Mario A. Meza Cuevas and Lait Abu-Saleh and Dietmar Schroeder and Wolfgang Krautschneider},
title = {{T}oward the optimal architecture of an {A}{S}{I}{C} for neurostimulation},
year = {2012},
month = {02},
booktitle = {BIODEVICES 2012},
note = {BIODEVICES 2012, Vilamoura, Portugal, 1-4. February 2012},
pages = {179-184} }

[Abstract] [BibTeX] [DOI]
Arthur Schott, Wjatscheslaw Galjan and Wolfgang Krautschneider

16-Kanal ASIC mit ECoG Signalaufnahmesystemen für neurologische Experimente

Artikel in "PTB, BBS 2012", 2012

Abstract:

BibTeX:
@article{Schott_BBS2012,
author = {Arthur Schott and Wjatscheslaw Galjan and Wolfgang Krautschneider},
title = {16-{K}anal {A}{S}{I}{C} mit {E}{C}o{G} {S}ignalaufnahmesystemen f{\"u}r neurologische {E}xperimente},
year = {2012},
journal = {PTB, BBS 2012} }

[BibTeX]
Fabian Wagner

Automatisierte Partitionierung von Mixed-Signal Schaltungen für die Realisierung von Systems-in-Package

Dissertation an der Technische Universität Hamburg-Harburg (Logos Verlag Berlin, Comeniushof, Gubener Str. 47,10243 Berlin), 2012

Abstract:

BibTeX:
@phdthesis{Wagner:SiP:2012,
author = {Fabian Wagner},
title = {{A}utomatisierte {P}artitionierung von {M}ixed-{S}ignal {S}chaltungen f{\"u}r die {R}ealisierung von {S}ystems-in-{P}ackage},
year = {2012},
address = {Logos Verlag Berlin, Comeniushof, Gubener Str. 47,10243 Berlin},
school = {Technische Universit{\"a}t Hamburg-Harburg} }

[BibTeX]
Farzad Hosseini and Wolfgang Krautschneider

Kapazitives Sensorsystem zur Ableitung und Unterdrückung der Bewegungsartefakte in kapazitiven EKG Elektroden

Artikel in "PTB, BBS 2012", 2012

Abstract:

BibTeX:
@article{Hosseini_BBS2012,
author = {Farzad Hosseini and Wolfgang Krautschneider},
title = {{K}apazitives {S}ensorsystem zur {A}bleitung und {U}nterdr{\"u}ckung der {B}ewegungsartefakte in kapazitiven {E}{K}{G} {E}lektroden},
year = {2012},
journal = {PTB, BBS 2012} }

[BibTeX]

top

2011

Lait Abu-Saleh, Wjatscheslaw Galjan, Jakob M. Tomasik, Dietmar Schröder, Wolfgang H. Krautschneider

Ein ASIC in 130nm-Technologie für die Aufnahme von EMG-Signalen zur Ansteuerung einer Prothese

In Tagungsband "ANALOG 2011", Verlag VDE-Verlag, 2011, vol. 70, Serie "GMM-Fachbericht", p. 155
12.GMM/ITG-Fachtagung, Erlangen, 7.- 9. November 2011

Abstract:
Es wird ein Mixed-Signal ASIC in 130nm-Technologie zur Aufnahme von EMG-Signalen beschrieben. Der Chip erfasst Muskelsignale aus fünf Kanälen, verstärkt sie und gibt die Signalwerte digitalisiert aus. Der Chip wurde auf Leistungseffizienz und Rauschminimierung optimiert und für die Anwendung in Implantaten realisiert.

BibTeX:
@inproceedings{AbuSaleh:Analog:2011,
author = {Lait Abu-Saleh and Wjatscheslaw Galjan and Jakob M. Tomasik and Dietmar Schr{\"o}der and Wolfgang H. Krautschneider},
title = {{E}in {A}{S}{I}{C} in 130nm-{T}echnologie f{\"u}r die {A}ufnahme von {E}{M}{G}-{S}ignalen zur {A}nsteuerung einer {P}rothese},
year = {2011},
month = {11},
booktitle = {ANALOG 2011},
note = {12.GMM/ITG-Fachtagung, Erlangen, 7.- 9. November 2011},
pages = {155},
publisher = {VDE-Verlag},
series = {GMM-Fachbericht},
volume = {70} }

[Abstract] [BibTeX]
Mario Meza, Lait Abu-Saleh, Dietmar Schroeder, Wolfgang Krautschneider

ASIC for Neurostimulation with Different Waveforms

In Tagungsband "BMT 2011", 2011
Freiburg, Germany, 27.-30. September 2011

Abstract:
An ASIC was developed to provide stimulation currents with digitally defined waveforms. The system is composed of a stimulator and a biosignal amplifier. The stimulator consists of a serial input interface, an 8 bit DAC, and an output stage capable to drive bipolar current signals. The amplifier is composed of an AC-coupled preamplifier, a lowpass filter and a postamplifier. With this circuit it is possible to stimulate neurons and, additionally, to detect and monitor bioelectrical signals.

BibTeX:
@inproceedings{Meza:BMT:2011,
author = {Mario Meza and Lait Abu-Saleh and Dietmar Schroeder and Wolfgang Krautschneider},
title = {{A}{S}{I}{C} for {N}eurostimulation with {D}ifferent {W}aveforms},
year = {2011},
month = {09},
booktitle = {BMT 2011},
note = {Freiburg, Germany, 27.-30. September 2011} }

[Abstract] [BibTeX]
S. Lewis, M. Russold, H. Dietl, S. Westendorff, A. Gail, T. Dörge, R. Ruff, K.-P. Hoffmann, L. Abu-Saleh, D. Schröder, W. Krautschneider

Detection of arm movement from EMG signals recorded with fully implanted electrodes: A case study in a rhesus macaque

In Tagungsband "BMT 2011", 2011
Freiburg, 27.-30. September 2011

Abstract:
Recent development of prosthetic limbs has resulted in a high number of degrees of freedom. In contrast state of the art control of prosthetic limbs is still limited to one degree of freedom at a time. The presented work is part of the development of a fully implantable EMG recording system that aims at providing an intuitive way of simultaneous control of multiple degrees of freedom for upper limb prosthetic devices.

BibTeX:
@inproceedings{Lewis:BMT:2011,
author = {S. Lewis and M. Russold and H. Dietl and S. Westendorff and A. Gail and T. D{\"o}rge and R. Ruff and K.-P. Hoffmann and L. Abu-Saleh and D. Schr{\"o}der and W. Krautschneider},
title = {{D}etection of arm movement from {E}{M}{G} signals recorded with fully implanted electrodes: {A} case study in a rhesus macaque},
year = {2011},
month = {09},
booktitle = {BMT 2011},
note = {Freiburg, 27.-30. September 2011} }

[Abstract] [BibTeX]
Schroeder, D.

Physical foundation of a recently proposed Schottky-contact model

Artikel in "IEEE Transactions on Electron Devices", vol. 58, Nr. 3, p. 874 -875, 2011

Abstract:
The goal of this correspondence is to supplement the Schottky-contact model proposed in "Generalized Drift-Diffusion Model for Rectifying Schottky Contact Simulation, " IEEE Transactions on Electron Devices, vol. 57, no. 7, July 2010, with a solid physical foundation by rigorously rederiving it from an analytical solution of Boltzmann's equation in the boundary layer.

BibTeX:
@article{Schroeder:ED:2011,
author = {Schroeder and D.},
title = {{P}hysical foundation of a recently proposed {S}chottky-contact model},
year = {2011},
month = {03},
journal = {IEEE Transactions on Electron Devices},
number = {3},
pages = {874 -875},
volume = {58} }

[Abstract] [BibTeX] [DOI]
Jakob M. Tomasik, Wjatscheslaw Galjan, Kristian M. Hafkemeyer, Dietmar Schroeder and Wolfgang H. Krautschneider

An integrated multi-channel system for biomedical signal acquisition

In Tagungsband "BIODEVICES 2011, International Conference on Biomedical Electronics and Devices" der INSTICC, 2011, p. 36--45
Rome, Italy, 26. - 29. January 2011

Abstract:
A CMOS configurable system-on-chip (SoC) for biomedical signal acquisition is described. The SoC is composed of 10 channels, each channel including a programmable analog front-end (AFE) and a 20 bit analog-to-digital converter (ADC). The digitized signals are read out via a high-speed serial communication bus. The AFE includes a common-mode rejection ratio (CMRR) calibration circuitry resulting in a CMRR of more than 80 dB and an active DC-suppression circuitry giving the DC-coupled instrumentation amplifier the possibility to tolerate DC-offsets of up to ±1 V for a power supply voltage of 3.3 V. In lownoise mode the AFE achieves an input referred noise of less than 50 nVrms for EEG application (0.5-70 Hz) and the power consumption of a channel including AFE and ADC is less than 5 mW in low-power mode. A prototype has been fabricated in a 0.35 μm CMOS process.

BibTeX:
@inproceedings{Tomasik:BiomedSoC:2011,
author = {Jakob M. Tomasik and Wjatscheslaw Galjan and Kristian M. Hafkemeyer and Dietmar Schroeder and Wolfgang H. Krautschneider},
title = {{A}n integrated multi-channel system for biomedical signal acquisition},
year = {2011},
month = {01},
booktitle = {BIODEVICES 2011, International Conference on Biomedical Electronics and Devices},
note = {Rome, Italy, 26. - 29. January 2011},
organization = {INSTICC},
pages = {36--45} }

[Abstract] [BibTeX]
Moranz, C and Kuhl, M and Manoli, Y

A digitally adjusted power supply for systems-on-chip based on CMOS integrated fuel cells

Artikel in "Proceedings of PowerMEMS", p. 86--89, 2011

Abstract:

BibTeX:
@article{moranz2011digitally,
author = {Moranz and C and Kuhl and M and Manoli and Y},
title = {{A} digitally adjusted power supply for systems-on-chip based on {C}{M}{O}{S} integrated fuel cells},
year = {2011},
journal = {Proceedings of PowerMEMS},
pages = {86--89} }

[BibTeX]
Kristian M. Hafkemeyer

Experimentelle und theoretische Untersuchungen der Degradation von ultradünnen MOS-Gatedielektrika

Dissertation an der TU Hamburg-Harburg, 2011

Abstract:

BibTeX:
@phdthesis{Hafkemeyer:2011,
author = {Kristian M. Hafkemeyer},
title = {{E}xperimentelle und theoretische {U}ntersuchungen der {D}egradation von ultrad{\"u}nnen {M}{O}{S}-{G}atedielektrika},
year = {2011},
school = {TU Hamburg-Harburg} }

[BibTeX]
Kuhl, Matthias and Gieschke, Pascal and Rossbach, Daniel and Hilzensauer, Sascha Alexander and Ruther, Patrick and Paul, Oliver and Manoli, Yiannos

ISSCC 2011/SESSION 6/SENSORS & ENERGY HARVESTING/6.3

Artikel in "ISSCC", 2011

Abstract:

BibTeX:
@article{kuhlisscc,
author = {Kuhl and Matthias and Gieschke and Pascal and Rossbach and Daniel and Hilzensauer and Sascha Alexander and Ruther and Patrick and Paul and Oliver and Manoli and Yiannos},
title = {{I}{S}{S}{C}{C} 2011/{S}{E}{S}{S}{I}{O}{N} 6/{S}{E}{N}{S}{O}{R}{S} {&} {E}{N}{E}{R}{G}{Y} {H}{A}{R}{V}{E}{S}{T}{I}{N}{G}/6.3},
year = {2011},
journal = {ISSCC} }

[BibTeX]
Kuhl, M and Gieschke, P and Paul, O and Manoli, Y

A differential difference amplifier with automatic gain selection as readout interface for cmos stress sensors in orthodontic brackets

In Tagungsband "2011 16th International Solid-State Sensors, Actuators and Microsystems Conference" der IEEE, 2011, p. 819--822

Abstract:

BibTeX:
@inproceedings{kuhl2011differential,
author = {Kuhl and M and Gieschke and P and Paul and O and Manoli and Y},
title = {{A} differential difference amplifier with automatic gain selection as readout interface for cmos stress sensors in orthodontic brackets},
year = {2011},
booktitle = {2011 16th International Solid-State Sensors, Actuators and Microsystems Conference},
organization = {IEEE},
pages = {819--822} }

[BibTeX]
Kuhl, Matthias and Gieschke, Pascal and Rossbach, Daniel and Hilzensauer, Sascha Alexander and Ruther, Patrick and Paul, Oliver and Manoli, Yiannos

A telemetric stress-mapping CMOS chip with 24 FET-based stress sensors for smart orthodontic brackets

In Tagungsband "2011 IEEE International Solid-State Circuits Conference" der IEEE, 2011, p. 108--110

Abstract:

BibTeX:
@inproceedings{kuhl2011telemetric,
author = {Kuhl and Matthias and Gieschke and Pascal and Rossbach and Daniel and Hilzensauer and Sascha Alexander and Ruther and Patrick and Paul and Oliver and Manoli and Yiannos},
title = {{A} telemetric stress-mapping {C}{M}{O}{S} chip with 24 {F}{E}{T}-based stress sensors for smart orthodontic brackets},
year = {2011},
booktitle = {2011 IEEE International Solid-State Circuits Conference},
organization = {IEEE},
pages = {108--110} }

[BibTeX]
Manoli, Yiannos and Hehn, Thorsten and Hoffmann, Daniel and Kuhl, Matthias and Lotze, Niklas and Maurath, Dominic and Moranz, Christian and Rossbach, Daniel and Spreemann, Dirk

Energy harvesting and chip autonomy

In "Chips 2020", Verlag Springer Berlin Heidelberg, 2011, p. 393--420

Abstract:

BibTeX:
@incollection{manoli2011energy,
author = {Manoli and Yiannos and Hehn and Thorsten and Hoffmann and Daniel and Kuhl and Matthias and Lotze and Niklas and Maurath and Dominic and Moranz and Christian and Rossbach and Daniel and Spreemann and Dirk},
title = {{E}nergy harvesting and chip autonomy},
year = {2011},
booktitle = {Chips 2020},
pages = {393--420},
publisher = {Springer Berlin Heidelberg} }

[BibTeX]

top

2010

Arthur Schott, Lait Abu-Saleh, Jakob Tomasik, Wjatscheslaw Galjan, and Wolfgang Krautschneider

Design measures for performance compensation of analog circuits during reduction of technology structures

In Tagungsband "ProRISC2010 Program for Research on Integrated Circuits and Systems", 2010
Veldhoven (The Netherlands), 18.-19. November 2010

Abstract:

BibTeX:
@inproceedings{Schott:circuits:2010,
author = {Arthur Schott and Lait Abu-Saleh and Jakob Tomasik and Wjatscheslaw Galjan and and Wolfgang Krautschneider},
title = {{D}esign measures for performance compensation of analog circuits during reduction of technology structures},
year = {2010},
month = {11},
booktitle = {ProRISC2010 Program for Research on Integrated Circuits and Systems},
note = {Veldhoven (The Netherlands), 18.-19. November 2010} }

[BibTeX]
J. Buhk and B.T. Bradford and A. Koops and D. Schroeder and W.H. Krautschneider and G. Adam

An integrated stent-graft for non-invasive 4-dimensional aneurysm sac pressure monitoring after endovascular aortic aneurysm repair

In Tagungsband "RSNA 2010", 2010, p. LL-VIS-WE4A
Chicago, Nov. 28 - Dec. 3, 2010

Abstract:
Purpose: To evaluate a concept for non-invasive measurement of the pressure in the aneurysm sac following endovascular aortic aneurysm repair (EVAR) using a prototypic stent-graft with an integrated foldable network of pressure sensors covering the surface of the implant and capable of wireless digital data transmission. Material and Methods: Based on a commercially available aortic stent-graft we initially constructed a prototype with 4 silicon-based pressure sensors arranged on the surface of the implant fitting into a standard 24 F delivery sheath. Digital data conversion is performed by a microcontroller integrated into the sensor array. Energy transfer is performed by inductive coupling, with a data transfer rate of 25 kbit / s (adequate for 80 samples / s / channel). The receiver puts out standardized data via a Universal Serial Bus (USB) port, which can be used for 4-dimensional visualization of the pressure distribution. Based on this prototype we designed a dedicated application specific integrated circuit (ASIC) capable of 256 single pressure sensors in order to provide coverage of the whole surface of a future implant. Due to the full integration of all microelectronic devices on the implant no further procedural steps are necessary during the intervention or later on. Results: The in vitro tests in a vessel model demonstrated a reliable 4-dimensional acquisition of a pressure profile on the surface of the implant and the precise wireless energy and digital data transmission over a distance of 50 cm. Ongoing in vivo experiments in a swine model are currently being performed to confirm these results. Conclusion: The non-invasive acquisition of a pressure profile in the aneurysm sac after EVAR by integrating the detectors on the outer surface of the stent-graft allows detecting a regional pressure elevation due to early endoleak, and it is a practical and efficient option for continuous and direct pressure monitoring which reduces the necessity of follow-up imaging to rule out an endoleak. An implementation into a product and testing in a clinical study seems feasible.

BibTeX:
@inproceedings{Buhk:RSNA:2010,
author = {J. Buhk and B.T. Bradford and A. Koops and D. Schroeder and W.H. Krautschneider and G. Adam},
title = {{A}n integrated stent-graft for non-invasive 4-dimensional aneurysm sac pressure monitoring after endovascular aortic aneurysm repair},
year = {2010},
month = {11},
booktitle = {RSNA 2010},
note = {Chicago, Nov. 28 - Dec. 3, 2010},
pages = {LL-VIS-WE4A} }

[Abstract] [BibTeX]
Lait Abu-Saleh, Wjatscheslaw Galjan, Jakob M. Tomasik, Dietmar Schröder and Wolfgang H. Krautschneider

Ein implantierbares System zur Aufnahme von EMG-Signalen zur Ansteuerung einer Prothese

In Tagungsband "BMT2010", 2010
Rostock, Germany, 6.-8. Oct. 2010

Abstract:
Es wird ein implantierbares System zur Ansteuerung von Handprothesen beschrieben. Das System erfasst Muskelsignale und überträgt sie per Funk an eine Basisstation, welche sich in der Prothese befindet. Die Energieversorgung sowie die Übermittlung der Daten erfolgt drahtlos. Das System ist auf hohe Leistungseffizienz optimiert, um komfortablen mobilen Einsatz zu ermöglichen. An implantable system for control of hand prostheses is described. The system acquires muscle signals and transmits them to a base station which is part of the prosthesis. Both the power supply and the data transfer is wirelessly carried out. The system is optimized for high power efficiency to allow comfortable mobile applications.

BibTeX:
@inproceedings{la:BMT:2010,
author = {Lait Abu-Saleh and Wjatscheslaw Galjan and Jakob M. Tomasik and Dietmar Schr{\"o}der and Wolfgang H. Krautschneider},
title = {{E}in implantierbares {S}ystem zur {A}ufnahme von {E}{M}{G}-{S}ignalen zur {A}nsteuerung einer {P}rothese},
year = {2010},
month = {10},
booktitle = {BMT2010},
note = {Rostock, Germany, 6.-8. Oct. 2010} }

[Abstract] [BibTeX]
Fabian Wagner, Nashwa Abo Elneel, Dietmar Schroeder and Wolfgang Krautschneider

Scalable System in Package for Biomedical Applications

In Tagungsband "BMT2010", 2010
Rostock, Germany, 6.-8. Oct. 2010

Abstract:
In this work, a System in Package (SiP) for biomedical signal acquisition with a variable number of channels is presented and the advantages of SiP in terms of flexibility and scalability are discussed. Two ASICs were designed to acquire and digitize a broad range of biomedical signals such as ECG, EEG and EMG(ExG). A prototype with 3 channels, a microcontroller and a wireless transceiver was realized on a 2.45x2.45x0.3 cm3 leadless chip carrier and successfully operated.

BibTeX:
@inproceedings{fw:BMT:2010,
author = {Fabian Wagner and Nashwa Abo Elneel and Dietmar Schroeder and Wolfgang Krautschneider},
title = {{S}calable {S}ystem in {P}ackage for {B}iomedical {A}pplications},
year = {2010},
month = {10},
booktitle = {BMT2010},
note = {Rostock, Germany, 6.-8. Oct. 2010} }

[Abstract] [BibTeX]
H. Dietl, A. Gail, K.-P. Hoffmann, W. Krautschneider, T. Meiners

Verbundprojekt MyoPlant

In Tagungsband "BMT2010", 2010
Rostock, Germany, 6.-8. Oct. 2010

Abstract:
Der Verlust einer Extremität ist ein einschneidendes Ereignis mit großen Einschränkungen im täglichen Leben. Weltweit leben geschätzte 1.000.000 Menschen mit dem Verlust einer Hand. In Deutschland schätzt man 20.000 Betroffene für das Jahr 2003 (Statistisches Bundesamt für Statistik). Derzeit am Markt erhältliche Handprothesen bilden nur einen Bruchteil der natürlichen Funktionalität nach, sind in ihrer Beweglichkeit stark eingeschränkt, haben eine komplizierte und ineffiziente Bedienung und vermitteln kein Feedback an den Benutzer. Oft ist nur eine Griffart (Freiheitsgrad) möglich. Eine simultane Steuerung mehrerer Freiheitsgrade wird insbesondere von der Anzahl der Steuersignale eingeschränkt. Das Ziel des Projektes MyoPlant ist daher die Entwicklung eines bionischen Handprothesensystems (mit mehreren Freiheitsgraden) auf der Basis eines myogen gesteuerten intelligenten Implantates. Eine wesentliche Steigerung der Funktionalität soll durch die Realisierung einer multifunktionalen, intuitiven und simultanen Steuerung mittels invasiv erfasster muskulärer Aktivität unter Zuhilfenahme von sensorischer Rückkopplung erreicht werden.

BibTeX:
@inproceedings{MyoPlant:BMT:2010,
author = {H. Dietl and A. Gail and K.-P. Hoffmann and W. Krautschneider and T. Meiners},
title = {{V}erbundprojekt {M}yo{P}lant},
year = {2010},
month = {10},
booktitle = {BMT2010},
note = {Rostock, Germany, 6.-8. Oct. 2010} }

[Abstract] [BibTeX]
Bryce Bradford, Wolfgang Krautschneider, and Dietmar Schröder

Wireless Power and Data Transmission for a Pressure Sensing Medical Implant

In Tagungsband "BMT2010", 2010
Rostock, Germany, 6.-8. Oct. 2010

Abstract:
Recent advances in low power integrated circuits are opening up a whole new realm of possibilities in the field of medical implants. One such possibility is to have implants which require neither wires nor batteries. Such an implant could be put in place and monitored using external equipment for the life of the patient, and it would never require later surgical operations to replace the batteries. The implant could be powered by the RF field generated by an external reader, and it would transmit its data back to the external reader using that same RF field. This paper will discuss the development of a medical implant which is designed to measure the blood pressure level profile from inside an abdominal aortic aneurysm sac. This implant is designed to collect pressure sample readings from an array of pressure sensors, and to transmit those pressure sample values to an external reading device.

BibTeX:
@inproceedings{bb:BMT:2010,
author = {Bryce Bradford and Wolfgang Krautschneider and and Dietmar Schr{\"o}der},
title = {{W}ireless {P}ower and {D}ata {T}ransmission for a {P}ressure {S}ensing {M}edical {I}mplant},
year = {2010},
month = {10},
booktitle = {BMT2010},
note = {Rostock, Germany, 6.-8. Oct. 2010} }

[Abstract] [BibTeX]
Nashwa Abo Elneel, Erkan Aksoy, Dietmar Schroeder

A power-adaptable A/D converter with integrated data compression

Artikel in "Analog Integrated Circuits and Signal Processing", vol. 64, Nr. 3, p. 249-259, 2010

Abstract:
A novel adaptable analog/digital converter (ADC) that combines analog/digital conversion and entropy-coding for integrated data compression and low-power operation is reported. The converter has high flexibility of operation in terms of adaptable resolution, conversion rate and input signal statistics. This feature allows to adaptively react to changes of the situation and to put the device in each case into the optimum configuration. The ADC has been realized in a 0.6 μm CMOS technology with a peak resolution of 12 bit and 200 kS/s maximum sampling rate. A comprehensive power model of the converter is presented that reflects precisely the power consumption determined from experiments. The model is very useful for optimizing the converter configuration in the node of a wireless sensor network for specific situations. A feasible real-life application is demonstrated.

BibTeX:
@article{Elneel:ECOC4:2010,
author = {Nashwa Abo Elneel and Erkan Aksoy and Dietmar Schroeder},
title = {{A} power-adaptable {A}/{D} converter with integrated data compression},
year = {2010},
month = {09},
journal = {Analog Integrated Circuits and Signal Processing},
number = {3},
pages = {249-259},
volume = {64} }

[Abstract] [BibTeX] [DOI]
Pan, Zhihao and Holland, Steffen and Schroeder, Dietmar and Krautschneider, Wolfgang

Improved impact-ionization modelling and validation with pn-junction diodes

In Tagungsband "15th International Conference on Simulation of Semiconductor Devices and Processes", Verlag IEEE, 2010, p. 287 -290
SISPAD 2010, Bologna, September 6-8, 2010

Abstract:
Impact-ionization at low and high electric field as well as the temperature dependence has to be modeled well in order to improve the predictive capability of TCAD tools. The high field behavior is of particular interest for ESD protection devices with low breakdown voltages which are used to protect ICs made with modern technologies. In this paper, the model for estimating the impact-ionization proposed by Valdinoci [1] with the parameters of Reggiani [2] has been examined with diodes of various breakdown voltages. It was found that the experimental breakdown voltages of the diodes are underestimated using that model. The cause was traced back to the overestimation of the electron impact-ionization coefficient at high electric fields. By adjusting the model parameters to the experiments of Van Overstraeten [3] and Grant [4], who measured the impact-ionization coefficient in silicon for fields up to 7.7e5 V/cm, we extend the model's validity to high fields. With the new parameter set, a much better agreement to the measured breakdown voltages is obtained. As a check for the temperature dependence of the impact-ionization, the diodes were further investigated under 100 ns transmission line pulses (TLP). The measured high-current I-V characteristic is well reproduced by simulations using the new model, as opposed to the well-established model based on Chynoweth's law. Both the failure level and the damage location are well predicted by the simulation.

BibTeX:
@inproceedings{Pan:SISPAD:2010,
author = {Pan and Zhihao and Holland and Steffen and Schroeder and Dietmar and Krautschneider and Wolfgang},
title = {{I}mproved impact-ionization modelling and validation with pn-junction diodes},
year = {2010},
month = {09},
booktitle = {15th International Conference on Simulation of Semiconductor Devices and Processes},
note = {SISPAD 2010, Bologna, September 6-8, 2010},
pages = {287 -290},
publisher = {IEEE} }

[Abstract] [BibTeX] [DOI]
Fabian Wagner, Nashwa Abo Elneel, Dietmar Schroeder and Wolfgang Krautschneider

Design and Implementation of an Integrated RF System-in-Package for Healthcare Applications

In Tagungsband "Electronics System Integration Technology Conference 2010", 2010
ESTC 2010, Berlin, Germany, 13.-16. Sep. 2010

Abstract:
A 3 channel ECG system with wireless data transmission is presented. It is built as a System in Package (SiP) consisting of 6 dies and 39 SMD components mounted on a FR4 substrate at a size of 2.45 x 2.45 mm2. Design considerations and ASIC partitioning is addressed in this work. In addition, measurement results are presented proving that a SiP can compete with a System on Chip.

BibTeX:
@inproceedings{fw:ESTC:2010,
author = {Fabian Wagner and Nashwa Abo Elneel and Dietmar Schroeder and Wolfgang Krautschneider},
title = {{D}esign and {I}mplementation of an {I}ntegrated {R}{F} {S}ystem-in-{P}ackage for {H}ealthcare {A}pplications},
year = {2010},
month = {09},
booktitle = {Electronics System Integration Technology Conference 2010},
note = {ESTC 2010, Berlin, Germany, 13.-16. Sep. 2010} }

[Abstract] [BibTeX]
Bibin John, Kristian M. Hafkemeyer, Wolfgang H. Krautschneider

An opamp array test structure for stress test measurements

In Tagungsband "Zuverlässigkeit und Entwurf (GMM-FB 66)", 2010, Nr. 66, Herausgeber VDE/VDI-Gesellschaft Mikroelektronik, Mikrosystem- und Feinwerktechnik (GMM)
4. GMM/GI/ITG-Fachtagung, Wildbad Kreuth, Germany, 13.-15. Sept. 2010

Abstract:
This paper is about setting up of an opamp array test structure for investigating the degradation of differential amplifier circuit performance and variation of its individual transistor parameters in a stress test. In an analog circuit implemented using transistors with ultra-thin gate dielectric oxide, the increased gate leakage current results in the increased chances of transistor dielectric breakdown and effects significantly the circuit performance. Differential amplifiers with transistors having tox=2.2 nm are designed for applying voltage and temperature stresses. Transmission gates and other logic circuitry transistors with oxide thickness 6.5 nm are used to stress the differential amplifier circuit and to address individual transistors in the differential amplifier circuit. An array of 16 differential amplifiers with transmission gates are implemented for stress test measurements.

BibTeX:
@inproceedings{BJ:2010,
author = {Bibin John and Kristian M. Hafkemeyer and Wolfgang H. Krautschneider},
title = {{A}n opamp array test structure for stress test measurements},
year = {2010},
month = {09},
booktitle = {Zuverl{\"a}ssigkeit und Entwurf (GMM-FB 66)},
editor = {VDE/VDI-Gesellschaft Mikroelektronik, Mikrosystem- und Feinwerktechnik (GMM)},
note = {4. GMM/GI/ITG-Fachtagung, Wildbad Kreuth, Germany, 13.-15. Sept. 2010},
number = {66} }

[Abstract] [BibTeX]
Pan, Z. and Holland, S. and Schroeder, D. and Krautschneider, W. H.

Understanding the Mechanisms of Degradation and Failure Observed in ESD Protection Devices Under System-Level Tests

Artikel in "IEEE Transactions on Device and Materials Reliability", vol. 10, Nr. 2, p. 187 -191, 2010

Abstract:
The behavior and the failure mechanism of a monolithic bidirectional ESD protection device under a system-level ESD pulse are investigated. The device is realized by two diffused vertical back-to-back connected diodes. When the bottom p-n junction is stressed with an 18-kV system-level pulse, the device exhibited the typical signature of second thermal breakdown. Surprisingly, no ESD damage could initially be observed by measuring the poststress leakage current, even when the ESD level was further increased to 30 kV. A degrading IV behavior was later found to be associated with the second thermal breakdown. Based on simulations, local crystal defects are proposed to explain the observed degradation of the IV behavior. It is shown that, in this case, leakage-current measurements alone fail to detect such ESD damage. Failure analysis of the device confirms the existence of the crystal damage.

BibTeX:
@article{Pan:TransDevMatRel:2010,
author = {Pan and Z. and Holland and S. and Schroeder and D. and Krautschneider and W. H.},
title = {{U}nderstanding the {M}echanisms of {D}egradation and {F}ailure {O}bserved in {E}{S}{D} {P}rotection {D}evices {U}nder {S}ystem-{L}evel {T}ests},
year = {2010},
month = {06},
journal = {IEEE Transactions on Device and Materials Reliability},
number = {2},
pages = {187 -191},
volume = {10} }

[Abstract] [BibTeX] [DOI]
Nashwa Abo Elneel and Fabian Wagner and Dietmar Schroeder and Wolfgang H. Krautschneider

Floorplanning and Design Considerations of an RF System-in-Package for Biomedical Signal Acquisition

In Tagungsband "CDNLive! EMEA 2010", 2010
Munich, Germany, 4.-6. May 2010

Abstract:
In order to investigate eventual benefits of a SiP approach over a SoC for biomedical signal acquisition, a system, consisting of three channels for amplifying and digitizing the acquired signals as well as a microcontroller, was partitioned into three single chan-nel dies, such that interconnects are reduced and digital signals are separated from ana-log signals. The substrate was designed to be as small as possible, while being easy to mount. Hence, the IOs of the substrate were made like LCC pins, which enabled han-dling it like an SMD. Two channel dies were stacked as well as the 3rd channel die and the decimator die, resulting in a substrate size of 2.5x2.5 cm2. In addition, the SiP inte-grates 36 SMD components to support the required functionality, leaving just a battery, antenna and power supply circuitry as external components.To design the system, IC5.1.41 and SPB16.01 with “Cadence SiP RF Architectö and “Cadence SiP RF Layoutö were used. We successfully applied the RF SiP Methodology as proposed in the Cadence RF SiP Methodology Kit. Afterwards, all components were placed, die stacks and wire-bonds were created, and manually routed. Finally the whole system was checked for performance and design rules. Furthermore, the back-annotation feature of the RF transmission lines from layout to the schematic greatly helped in the procedure of matching the differential RF port of the transceiver die to the antenna. Considering that this was our first SiP project, the methodology and tools pro-vided enough support to get functional hardware with a design effort of approx. four person months, including learning the tools.

BibTeX:
@inproceedings{na:SiP:2010,
author = {Nashwa Abo Elneel and Fabian Wagner and Dietmar Schroeder and Wolfgang H. Krautschneider},
title = {{F}loorplanning and {D}esign {C}onsiderations of an {R}{F} {S}ystem-in-{P}ackage for {B}iomedical {S}ignal {A}cquisition},
year = {2010},
month = {05},
booktitle = {CDNLive! EMEA 2010},
note = {Munich, Germany, 4.-6. May 2010} }

[Abstract] [BibTeX]
Bibin John, Fabian Wagner and Wolfgang H. Krautschneider

Comparison of Decimation Filter Architectures for a Sigma-Delta Analog to Digital Converter

In Tagungsband "IEEE Student Conference 2010", 2010
Hamburg, Germany, 20.-21. May 2010

Abstract:
Different decimation ﬁlter architectures are compared for integration with an existing sec- ond order sigma-delta modulator to form a sigma- delta ADC. The decimation ﬁlters are implemented using a third order cascaded integrator comb ﬁlter programmed to work for oversampling ratios of 64, 128 and 256. IIR-FIR, non-recursive and polyphase architectures of decimation ﬁlters are simulated and implemented using 130nm CMOS technology. Pros and cons of different architectures are compared using parameters like area, power consumption and potential for future technologies.

BibTeX:
@inproceedings{bj:Decimation:2010,
author = {Bibin John and Fabian Wagner and Wolfgang H. Krautschneider},
title = {{C}omparison of {D}ecimation {F}ilter {A}rchitectures for a {S}igma-{D}elta {A}nalog to {D}igital {C}onverter},
year = {2010},
month = {05},
booktitle = {IEEE Student Conference 2010},
note = {Hamburg, Germany, 20.-21. May 2010} }

[Abstract] [BibTeX]
Henning Karger

Single Poly Non-Volatile Memory Cells in a 130 nm Standard Mixed Mode CMOS Process

In Tagungsband "IEEE Student Conference 2010", 2010
Hamburg, Germany, 20.-21. May 2010

Abstract:
A small system for non-volatile data storage was designed, fabricated in 130nm and characterized. Key beneﬁts are full compatibility with low-cost standard CMOS processes and the ease of integration in integrated circuit design projects.

BibTeX:
@inproceedings{hk:Memory:2010,
author = {Henning Karger},
title = {{S}ingle {P}oly {N}on-{V}olatile {M}emory {C}ells in a 130 nm {S}tandard {M}ixed {M}ode {C}{M}{O}{S} {P}rocess},
year = {2010},
month = {05},
booktitle = {IEEE Student Conference 2010},
note = {Hamburg, Germany, 20.-21. May 2010} }

[Abstract] [BibTeX]
Wjatscheslaw Galjan

Leistungseffiziente analog/digitale integrierte Schaltungen zur Aufnahme und Verarbeitung von biomedizinischen Signalen

Dissertation an der TU Hamburg-Harburg (Logos Verlag Berlin), 2010
Wissenschaftliche Beiträge zur Medizinelektronik, Bd. 1

Abstract:
Die vorliegende Arbeit beschäftigt sich mit der Aufnahme und der Verarbeitung von biomedizinischen Signalen mit Hilfe von speziell optimierten integrierten Schaltungen. Die realisierten Mikrochips erlauben eine hochqualitative Signalaufnahme mit sehr niedriger Leistungsaufnahme auf kleinstem Volumen. Durch die Integration eines digitalen Signalprozessors in einem und die Sicherstellung der Kaskadierbarkeit in dem anderen können die Mikrochips für autonome Systeme mit wenigen bis mehreren Hundert Kanälen verwendet werden.

BibTeX:
@phdthesis{Galjan:Diss:2010,
author = {Wjatscheslaw Galjan},
title = {{L}eistungseffiziente analog/digitale integrierte {S}chaltungen zur {A}ufnahme und {V}erarbeitung von biomedizinischen {S}ignalen},
year = {2010},
address = {Logos Verlag Berlin},
note = {Wissenschaftliche Beitr{\"a}ge zur Medizinelektronik, Bd. 1},
school = {TU Hamburg-Harburg} }

[Abstract] [BibTeX]
Jakob M. Tomasik

Low-Noise and Low-Power CMOS Amplifiers, Analog Front-Ends, and Systems for Biomedical Signal Acquisition

Dissertation an der TU Hamburg-Harburg (Logos Verlag Berlin), 2010
Wissenschaftliche Beiträge zur Medizinelektronik, Bd. 2

Abstract:
This work describes the analysis, design and realisation of biomedical amplifiers and analog front-end building blocks implemented in CMOS technology. In this context, a 1.2 V, 130 nm CMOS operational amplifier design is presented which allows to adjust its noise and power specifications. The amplifier and front-end concepts were used in the design of biomedical system-on-chip solutions that include calibration and DC-offset supression techniques.

BibTeX:
@phdthesis{Tomasik:CMOS:2009,
author = {Jakob M. Tomasik},
title = {{L}ow-{N}oise and {L}ow-{P}ower {C}{M}{O}{S} {A}mplifiers, {A}nalog {F}ront-{E}nds, and {S}ystems for {B}iomedical {S}ignal {A}cquisition},
year = {2010},
address = {Logos Verlag Berlin},
note = {Wissenschaftliche Beitr{\"a}ge zur Medizinelektronik, Bd. 2},
school = {TU Hamburg-Harburg} }

[Abstract] [BibTeX]
Manoli, Y and Manoli, Y and Hehn, T and Hehn, T and Hoffmann, D and Hoffmann, D and Kuhl, M and Kuhl, M and Lotze, N and Lotze, N and others

Applications of Energy Harvesting

In Tagungsband "VDE-Kongress 2010" der VDE VERLAG GmbH, 2010

Abstract:

BibTeX:
@inproceedings{manoli2010applications,
author = {Manoli and Y and Manoli and Y and Hehn and T and Hehn and T and Hoffmann and D and Hoffmann and D and Kuhl and M and Kuhl and M and Lotze and N and Lotze and N and others},
title = {{A}pplications of {E}nergy {H}arvesting},
year = {2010},
booktitle = {VDE-Kongress 2010},
organization = {VDE VERLAG GmbH} }

[BibTeX]

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2009

A. Domdey, K.M. Hafkemeyer, D. Schroeder, W.H. Krautschneider

Reliability analysis of gate dielectrics by applying array test structures and automated test systems

In Tagungsband "NORCHIP 2009", 2009
Trondheim, Norway, 16-17 November 2009

Abstract:
In this paper, we present an approach to analyse the degradation behaviour of the gate dielectric of thousands of MOS transistors simultaneously. Our approach is based on array test structures and automated test systems. The array test structures with a matrix-like arrangement of the MOS devices under test (DUT) have been designed and fabricated in a 130 nm mixed-mode CMOS process. They permit to stress up to 4k DUTs under same conditions. Several array test structures with different perimeters as well as areas integrated on one chip are available. Low-cost automated test systems allow for gate voltage stress experiments on a large scale with numerous array test structures in parallel. Experimental results are shown.

BibTeX:
@inproceedings{Domdey:NORCHIP:2009,
author = {A. Domdey and K.M. Hafkemeyer and D. Schroeder and W.H. Krautschneider},
title = {{R}eliability analysis of gate dielectrics by applying array test structures and automated test systems},
year = {2009},
month = {11},
booktitle = {NORCHIP 2009},
note = {Trondheim, Norway, 16-17 November 2009} }

[Abstract] [BibTeX]
A. Domdey, K. Hafkemeyer and W. Krautschneider

Reliability Analysis of MOSFET Thin Gate Dielectrics by Applying Test Structures and Automated Test Systems

In Tagungsband "Proceedings SAFE 2009", 2009
Veldhoven (The Netherlands)

Abstract:
In this paper, we present an approach to analyse the degradation behaviour of the gate dielectric of thousands of MOS transistors simultaneously. Our approach is based on array test structures and automated test systems. The array test structures with a matrix-like arrangement of the MOS devices under test (DUT) have been designed and fabricated in a 130 nm mixed-mode CMOS process. They permit to stress up to 4k DUTs under same conditions. Several array test structures with different perimeters as well as areas integrated on one chip are available. Low-cost automated test systems allow for gate voltage stress experiments on a large scale with numerous array test structures in parallel. Experimental results are shown.

BibTeX:
@inproceedings{Domdey:MOSFET:2009,
author = {A. Domdey and K. Hafkemeyer and W. Krautschneider},
title = {{R}eliability {A}nalysis of {M}{O}{S}{F}{E}{T} {T}hin {G}ate {D}ielectrics by {A}pplying {T}est {S}tructures and {A}utomated {T}est {S}ystems},
year = {2009},
month = {11},
booktitle = {Proceedings SAFE 2009},
note = {Veldhoven (The Netherlands)} }

[Abstract] [BibTeX]
F. Wagner, W. Galjan, D. Schröder and W.H. Krautschneider

Integrated Programmable 2nd Order IIR Digital Filter Cell

In Tagungsband "ProRISC 2009", 2009
Veldhoven, The Netherlands

Abstract:
In this work, a 2nd order IIR filter structure realized with minimum hardware effort is presented. By reusing the multiplier and the adder, 2nd order filtering is executed in five clock cycles. The filter coefficients are written to five registers, which programs the filter operation to low, high or band pass behavior.Using a 130 nm process, this filter consumes 0.112 nJ per computed 16-bit sample and 0.035 mm2 of silicon area.

BibTeX:
@inproceedings{Wagner:Cell:2009,
author = {F. Wagner and W. Galjan and D. Schr{\"o}der and W.H. Krautschneider},
title = {{I}ntegrated {P}rogrammable 2nd {O}rder {I}{I}{R} {D}igital {F}ilter {C}ell},
year = {2009},
month = {11},
booktitle = {ProRISC 2009},
note = {Veldhoven, The Netherlands} }

[Abstract] [BibTeX]
Bryce Bradford, Wolfgang Krautschneider and Arthur Schott

Blood Pressure Sensing Medical Implant

In Tagungsband "SAFE 2009", 2009
Veldhoven (The Netherlands)

Abstract:
Abstract—The current method for detecting leakage around the endovascular stent graft following endovascular aneurysm repair (EVAR) is through the evaluation of angiography scan images. In addition to the inconvenience of performing these angiograph scans, plus the risk of misinterpretation of the image data, this method for detecting leakage does not allow for direct, real-time measurements of the intrasac aneurysm pressure levels. By using RFID technology, micromachined pressure sensors, and ultra low power integrated circuitry, a method for taking direct pressure level readings from inside the aneurysm sac is being developed to overcome these shortcomings. This paper will describe the development of a new pressure sensing medical implant which will record and wirelessly transmit real time pressure readings from inside the aneurysm sac. This proof of concept system is evaluated based on its wireless read distance vs. ADC sample rate vs. transmitter antenna size.

BibTeX:
@inproceedings{Bradford:Blood:2009,
author = {Bryce Bradford and Wolfgang Krautschneider and Arthur Schott},
title = {{B}lood {P}ressure {S}ensing {M}edical {I}mplant},
year = {2009},
month = {11},
booktitle = {SAFE 2009},
note = {Veldhoven (The Netherlands)} }

[Abstract] [BibTeX]
Kristian M. Hafkemeyer, Andreas Domdey, Dietmar Schroeder, Wolfgang H. Krautschneider

Integrated Array Test Structure for Gate Oxide Integrity Statistics and Charge Pumping Measurements

In Tagungsband "SAFE 2009", 2009
Veldhoven (Netherlands)

Abstract:
An array test structure for gate oxide integrity and charge pumping measurements is presented. The test structure has been designed in a 130 nm mixed-mode CMOS technology offering two gate oxide thicknesses. A triple well option has been used for the devices under test (DUT) and the transmission gates to reduce leakage currents and to enable the possibility to measure the bulk currents of single DUTs in charge pumping experiments in correlation to interface states.

BibTeX:
@inproceedings{hfkmr:cp:2009,
author = {Kristian M. Hafkemeyer and Andreas Domdey and Dietmar Schroeder and Wolfgang H. Krautschneider},
title = {{I}ntegrated {A}rray {T}est {S}tructure for {G}ate {O}xide {I}ntegrity {S}tatistics and {C}harge {P}umping {M}easurements},
year = {2009},
month = {11},
booktitle = {SAFE 2009},
note = {Veldhoven (Netherlands)} }

[Abstract] [BibTeX]
Nashwa Abo Elneel, Fabian Wagner, Dietmar Schroeder, and Wolfgang H. Krautschneider

A Compact Wireless Sensor Node for Biomedical Signal Acquisition Realized as a System-in-Package

In Tagungsband "SOMSED 2009", 2009
Hamburg, Germany, 8.-9. Oct. 2009

Abstract:
The complete circuitry of a wireless sensor node for biomedical signal acquisition has been implemented as a System-in-Package (SiP). The realized node has a compact size of a 2.5x2.5x0.3 cm3 without a battery and antenna. The portable node can be attached to the patient’s body for ECG signal measurement and wireless transmission using the ZigBee protocol, and can be easily integrated and configured into any traditional ZigBee-based WSN.

BibTeX:
@inproceedings{na:SOMSED:DIONYSYS:2009,
author = {Nashwa Abo Elneel and Fabian Wagner and Dietmar Schroeder and and Wolfgang H. Krautschneider},
title = {{A} {C}ompact {W}ireless {S}ensor {N}ode for {B}iomedical {S}ignal {A}cquisition {R}ealized as a {S}ystem-in-{P}ackage},
year = {2009},
month = {10},
booktitle = {SOMSED 2009},
note = {Hamburg, Germany, 8.-9. Oct. 2009} }

[Abstract] [BibTeX]
Nashwa Abo Elneel and Dietmar Schroeder

Hardware-Based Data Compression for Efficient ECG Signal Transmission over a Wireless Sensor Network

In Tagungsband "SOMSED 2009", 2009
Hamburg, Germany, 8.-9. Oct. 2009

Abstract:
A Wireless Sensor Network (WSN) for remote ECG monitoring and data transmission to a PC has been implemented in a star topology. The first trial system consists of two sensor end-nodes and a base station. The sensor interface circuitry integrates an entropy-coding A/D converter (ECOC) for lossless ECG data compression. The application achieved good performance in terms of compression ratios and average bit rates, i.e. 3.04 bit/Sample at 500Hz sampling rate, resulting in an average RF-packet rate of 7.92 Packets/s per channel. The estimated transmitter power savings from the compression is 75%.

BibTeX:
@inproceedings{na:SOMSED:ECOC:2009,
author = {Nashwa Abo Elneel and Dietmar Schroeder},
title = {{H}ardware-{B}ased {D}ata {C}ompression for {E}fficient {E}{C}{G} {S}ignal {T}ransmission over a {W}ireless {S}ensor {N}etwork},
year = {2009},
month = {10},
booktitle = {SOMSED 2009},
note = {Hamburg, Germany, 8.-9. Oct. 2009} }

[Abstract] [BibTeX]
Klaus Dembrowski, Bryce T. Bradford

Low Power Wireless Sensor Node

In Tagungsband "SOMSED 2009", 2009
SOMSED 2009, Hamburg, 8-9. October 2009

Abstract:
The paper describes the development of a sensor board with Crossbow’s IRIS wireless sensor mote. The sensor board is used to measure light intensity, temperature, air pressure, and humidity while operating with very low power consumption. The power supply for the complete node includes a small solar panel and a switching regulator to generate power for recharging the IRIS mote’s batteries. The board is evaluated based on its energy consumption while operating at different sampling frequencies in the SOMSED wireless mesh network on TUHH. Furthermore, a Windows application parses the raw data from the sensor nodes into a data log file of structure into the Microsystems department’s server.

BibTeX:
@inproceedings{Node:Bradford:2009,
author = {Klaus Dembrowski and Bryce T. Bradford},
title = {{L}ow {P}ower {W}ireless {S}ensor {N}ode},
year = {2009},
month = {10},
booktitle = {SOMSED 2009},
note = {SOMSED 2009, Hamburg, 8-9. October 2009} }

[Abstract] [BibTeX]
Wjatscheslaw Galjan, Kristian M. Hafkemeyer, Jakob M. Tomasik, Fabian Wagner, Wolfgang H. Krautschneider and Dietmar Schroeder

Highly Sensitive Biomedical Amplifier with CMRR Calibration and DC-Offset Compensation

In Tagungsband "IEEE Eurocon", 2009, p. 172-175
Saint Petersburg, Russia, 18.-23. May 2009

Abstract:
To cover a wide range of biomedical applications, the presented instrumentational amplifier (INA) for acquisition of biomedical signals is adjustable regarding power consumption and noise. In addition, DC-offsets larger than +-500 mV resulting from electrochemical potentials of the electrodes can be compensated by applying a voltage to an additional input. To achieve a high common mode rejection ratio (CMRR) of more than 80 dB, a digitally controlled calibration circuitry has been integrated. The novel concept of calibrating the CMRR in the high resistive feedback loop of an opamp and the DC electrode potential suppression does not require any external components. The INA has been fabricated in a 350 nm CMOS technology.

BibTeX:
@inproceedings{Galjan:BioAmp:2009,
author = {Wjatscheslaw Galjan and Kristian M. Hafkemeyer and Jakob M. Tomasik and Fabian Wagner and Wolfgang H. Krautschneider and Dietmar Schroeder},
title = {{H}ighly {S}ensitive {B}iomedical {A}mplifier with {C}{M}{R}{R} {C}alibration and {D}{C}-{O}ffset {C}ompensation},
year = {2009},
month = {05},
booktitle = {IEEE Eurocon},
note = {Saint Petersburg, Russia, 18.-23. May 2009},
pages = {172-175} }

[Abstract] [BibTeX]
Frank, Mirko and Kuhl, Matthias and Erdler, Gilbert and Freund, Ingo and Manoli, Yiannos and Muller, Claas and Reinecke, Holger

An integrated power supply system for low power 3.3 V electronics using on-chip polymer electrolyte membrane (PEM) fuel cells

Artikel in "IEEE journal of solid-state circuits", vol. 45, Nr. 1, p. 205--213, 2009

Abstract:

BibTeX:
@article{frank2009integrated,
author = {Frank and Mirko and Kuhl and Matthias and Erdler and Gilbert and Freund and Ingo and Manoli and Yiannos and Muller and Claas and Reinecke and Holger},
title = {{A}n integrated power supply system for low power 3.3 {V} electronics using on-chip polymer electrolyte membrane ({P}{E}{M}) fuel cells},
year = {2009},
journal = {IEEE journal of solid-state circuits},
number = {1},
pages = {205--213},
publisher = {IEEE},
volume = {45} }

[BibTeX]
Kuhl, M and Frank, M and Erdler, G and Freund, I and Müller, C and Reinecke, H and Manoli, Y

An Integrated Power Supply System for Low-Power 3.3 V Electronics Using On-Chip PEM Fuel Cells

Artikel in "2009 IEEE International Solid-State Circuits Conference", 2009

Abstract:

BibTeX:
@article{kuhlintegrated,
author = {Kuhl and M and Frank and M and Erdler and G and Freund and I and M{\"u}ller and C and Reinecke and H and Manoli and Y},
title = {{A}n {I}ntegrated {P}ower {S}upply {S}ystem for {L}ow-{P}ower 3.3 {V} {E}lectronics {U}sing {O}n-{C}hip {P}{E}{M} {F}uel {C}ells},
year = {2009},
journal = {2009 IEEE International Solid-State Circuits Conference} }

[BibTeX]
Erdler, G and Uhl, L and Kuhl, M and Manoli, Y and Frank, M and Müller, C and Reinecke, H

Chipintegrierte PEM-Brennstoffzellenkaskaden als On-Chip Energieversorgung

Artikel in "MikroSystemTechnik", 2009

Abstract:

BibTeX:
@article{erdler2009chipintegrierte,
author = {Erdler and G and Uhl and L and Kuhl and M and Manoli and Y and Frank and M and M{\"u}ller and C and Reinecke and H},
title = {{C}hipintegrierte {P}{E}{M}-{B}rennstoffzellenkaskaden als {O}n-{C}hip {E}nergieversorgung},
year = {2009},
journal = {MikroSystemTechnik},
publisher = {VDE VERLAG GmbH} }

[BibTeX]
Kuhl, M and Erdler, G and Frank, M and Uhl, L and Müller, C and Reinecke, H and Manoli, Y

Integrierte Spannungsregelung und Kontrollsystem für chip-integrierte Brennstoffzellen-Kaskaden

Artikel in "MikroSystemTechnik", 2009

Abstract:

BibTeX:
@article{kuhl2009integrierte,
author = {Kuhl and M and Erdler and G and Frank and M and Uhl and L and M{\"u}ller and C and Reinecke and H and Manoli and Y},
title = {{I}ntegrierte {S}pannungsregelung und {K}ontrollsystem f{\"u}r chip-integrierte {B}rennstoffzellen-{K}askaden},
year = {2009},
journal = {MikroSystemTechnik},
publisher = {VDE VERLAG GmbH} }

[BibTeX]
Nashwa Abo Elneel, Fabian Wagner, Dietmar Schroeder, Wolfgang Krautschneider

Programmable analog channel for System-in-Package biomedical applications

Artikel in "Activity Report 2008, Europractice IC Service", 2009

Abstract:

BibTeX:
@article{Europractice08,
author = {Nashwa Abo Elneel and Fabian Wagner and Dietmar Schroeder and Wolfgang Krautschneider},
title = {{P}rogrammable analog channel for {S}ystem-in-{P}ackage biomedical applications},
year = {2009},
journal = {Activity Report 2008, Europractice IC Service} }

[BibTeX]
Gieschke, P and Nurcahyo, Y and Herrmann, M and Kuhl, M and Ruther, P and Paul, O

CMOS integrated stress mapping chips with 32 N-type or P-type piezoresistive field effect transistors

In Tagungsband "2009 IEEE 22nd International Conference on Micro Electro Mechanical Systems" der IEEE, 2009, p. 769--772

Abstract:

BibTeX:
@inproceedings{gieschke2009cmos,
author = {Gieschke and P and Nurcahyo and Y and Herrmann and M and Kuhl and M and Ruther and P and Paul and O},
title = {{C}{M}{O}{S} integrated stress mapping chips with 32 {N}-type or {P}-type piezoresistive field effect transistors},
year = {2009},
booktitle = {2009 IEEE 22nd International Conference on Micro Electro Mechanical Systems},
organization = {IEEE},
pages = {769--772} }

[BibTeX]
H. Balasubramaniam, W. Galjan, W.H. Krautschneider and H. Neubauer

12-bit Hybrid C2C DAC based SAR ADC with Floating Voltage Shield

In Tagungsband "IEEE Int. Conf. on Signals, Circuits and Systems", 2009
Proc. IEEE Int. Conf. on Signals, Circuits and Systems

Abstract:
A successive approximation ADC based on the C2C DAC architecture is introduced. The ADC designed in a 0.18μm CMOS 2 Poly 4 Metal process uses a hybrid capacitive DAC combining the best of the binary weighted capacitive array and the C2C array. C2C ladder based architectures are very attractive for implementation because of its small area, high speed and low power consumption. However a major drawback associated with this DAC is the presence of high parasitic bottom plate capacitances. A concept called the floating voltage shield (FVS) is introduced to reduce the effect of these parasitic capacitances and maximize the effective use of the C2C DAC features. The converter consists of the hybrid DAC, a two stage preamplifier followed by a dynamic latch, switch array and digital circuitry for switching and control. The ADC consumes a maximum power of 630μW at a peak conversion rate of approximately 2MS/s from a 1.8V supply voltage and 40MHz clock. Use of extremely simple and yet robust analog architectures for the comparator make the ADC operation less prone to process variation errors.

BibTeX:
@inproceedings{Balasubramaniam:12:2009,
author = {H. Balasubramaniam and W. Galjan and W.H. Krautschneider and H. Neubauer},
title = {12-bit {H}ybrid {C}2{C} {D}{A}{C} based {S}{A}{R} {A}{D}{C} with {F}loating {V}oltage {S}hield},
year = {2009},
booktitle = {IEEE Int. Conf. on Signals, Circuits and Systems},
note = {Proc. IEEE Int. Conf. on Signals, Circuits and Systems} }

[Abstract] [BibTeX]
Kristian M. Hafkemeyer, Andreas Domdey, Dietmar Schroeder and Wolfgang H. Krautschneider

Array Test Structure for Ultra-Thin Gate Oxide Degradation Issues

In Tagungsband "IEEE International Conference on Microelectronic Test Structures", 2009, p. 85-90
Oxnard, CA, USA

Abstract:
An array test structure for highly parallelized measurements of ultra-thin MOS gate oxide failures caused by degradation is presented. The test structure allows for voltage stress tests of several thousand NMOS devices under test (DUTs) in parallel to provide a large and significant statistical base regarding soft as well as hard breakdown and stress induced degradation of transistor parameters. The array has been fabricated in a standard 130 nm CMOS technology. As mixed mode technologies provide both thin and thick oxide MOS transistors, different gate oxide thicknesses have been chosen for DUTs and digital control logic which gives the possibility to stress the DUTs with high gate voltages.

BibTeX:
@inproceedings{Hafkemeyer:ICMTS:2009,
author = {Kristian M. Hafkemeyer and Andreas Domdey and Dietmar Schroeder and Wolfgang H. Krautschneider},
title = {{A}rray {T}est {S}tructure for {U}ltra-{T}hin {G}ate {O}xide {D}egradation {I}ssues},
year = {2009},
booktitle = {IEEE International Conference on Microelectronic Test Structures},
note = {Oxnard, CA, USA},
pages = {85-90} }

[Abstract] [BibTeX]
Frank, Mirko and Kuhl, Matthias and Erdler, Gilbert and Freund, Ingo and Manoli, Yiannos and Müller, Claas and Reinecke, Holger

An integrated power supply system for low-power 3.3 V electronics using on-chip polymer electrolyte membrane (PEM) fuel cells

In Tagungsband "Solid-State Circuits Conference-Digest of Technical Papers, 2009. ISSCC 2009. IEEE International" der IEEE, 2009, p. 292--293

Abstract:

BibTeX:
@inproceedings{frank2009integrated2,
author = {Frank and Mirko and Kuhl and Matthias and Erdler and Gilbert and Freund and Ingo and Manoli and Yiannos and M{\"u}ller and Claas and Reinecke and Holger},
title = {{A}n integrated power supply system for low-power 3.3 {V} electronics using on-chip polymer electrolyte membrane ({P}{E}{M}) fuel cells},
year = {2009},
booktitle = {Solid-State Circuits Conference-Digest of Technical Papers, 2009. ISSCC 2009. IEEE International},
organization = {IEEE},
pages = {292--293} }

[BibTeX]

top

2008

Wjatscheslaw Galjan, Desislava Naydenova, Jakob M. Tomasik, Dietmar Schroeder and Wolfgang H. Krautschneider

A Portable SoC-based ECG-System for 24h x 7d Operating Time

In Tagungsband "IEEE BioCAS", 2008, p. 85-88
Baltimore, USA, 20.-22. Nov. 2008

Abstract:
A portable battery powered 3-channel ECG-system is presented. This system can be operated up to 10 days by two standard AA batteries. It acquires 3 ECG signals with 16 bit resolution using a dedicated System on Chip (SoC) with an embedded DSP for power efficient data handling. The digitized data are filtered with an 80th order FIR filter and stored on a Compact Flash (CF) card that can be read out using a standard PC operating system. Combining high performance analog parts for signal acquisition and a powerful DSP on a single chip opens up innovative possibilities in reduction of system size and power consumption.

BibTeX:
@inproceedings{Galjan:ECG:2008,
author = {Wjatscheslaw Galjan and Desislava Naydenova and Jakob M. Tomasik and Dietmar Schroeder and Wolfgang H. Krautschneider},
title = {{A} {P}ortable {S}o{C}-based {E}{C}{G}-{S}ystem for 24h x 7d {O}perating {T}ime},
year = {2008},
month = {11},
booktitle = {IEEE BioCAS},
note = {Baltimore, USA, 20.-22. Nov. 2008},
pages = {85-88} }

[Abstract] [BibTeX]
Jakob M. Tomasik, Kristian M. Hafkemeyer, Wjatscheslaw Galjan, Dietmar Schroeder, and Wolfgang H. Krautschneider

A 130nm CMOS Programmable Operational Amplifier

In Tagungsband "NORCHIP 2008", 2008
Tallinn, Estonia, 17.-18. Nov. 2008

Abstract:
In this work we present a programmable 1.2 V Operational Amplifier (OpAmp) realized in a standard 130 nm CMOS technology. The OpAmp is based on a 3 V rail-to-rail input/output topology. The experimental results show the feasibility of using higher voltage topologies in conjunction with multi-threshold (multi-Vth) process options for low voltage designs. The programming range extends from a low-noise to a low-power mode. In addition, a constant-gm stage has been added to the rail-to-rail input. In low-noise mode the OpAmp has a low input thermal noise voltage of 5.1 nV/√Hz and in lowpower mode a power consumption of only 203 μW. Over the whole programming range the OpAmp maintains unity-gain stability with its phase margin varying between 58° and 62°.

BibTeX:
@inproceedings{Tomasik:OpAmp:2008,
author = {Jakob M. Tomasik and Kristian M. Hafkemeyer and Wjatscheslaw Galjan and Dietmar Schroeder and and Wolfgang H. Krautschneider},
title = {{A} 130nm {C}{M}{O}{S} {P}rogrammable {O}perational {A}mplifier},
year = {2008},
month = {11},
booktitle = {NORCHIP 2008},
note = {Tallinn, Estonia, 17.-18. Nov. 2008} }

[Abstract] [BibTeX]
Nashwa Abo Elneel, Erkan Aksoy, and Dietmar Schroeder

A Power-Adaptable Entropy-Coding A/D Converter

In Tagungsband "NORCHIP 2008", 2008
Tallinn, Estonia, 17.-18. Nov. 2008

Abstract:
We report on a redesigned entropy-coding analog/digital converter (ADC) that combines analog/digital conversion and entropy-coding for integrated data compression and low-power operation. The new version has an increased flexibility of operation in terms of adaptable resolution, conversion rate and input signal statistics. This feature allows to adaptively react to changes of the situation and to put the converter in each case into the optimum configuration. A comprehensive power model of the converter is presented that reflects precisely the power consumption determined from experiments. The model is very useful for optimizing the converter configuration in the node of a wireless sensor network for specific situations. A possible application is demonstrated.

BibTeX:
@inproceedings{na:ECOC4:2008,
author = {Nashwa Abo Elneel and Erkan Aksoy and and Dietmar Schroeder},
title = {{A} {P}ower-{A}daptable {E}ntropy-{C}oding {A}/{D} {C}onverter},
year = {2008},
month = {11},
booktitle = {NORCHIP 2008},
note = {Tallinn, Estonia, 17.-18. Nov. 2008} }

[Abstract] [BibTeX]
Kristian M. Hafkemeyer, Arthur Schott, Paola Vega-Castillo, and Wolfgang H. Krautschneider

Analog Circuit Calibration with Single Poly Non-Volatile Memories

In Tagungsband "NORCHIP 2008", 2008
Tallinn, Estonia, 17.-18. Nov. 2008

Abstract:
A single poly non-volatile memory module for analog circuit calibration fabricated in a standard 350 nm CMOS process is presented. This module performs the read, program and verify operations for non-volatile storage applications. This circuitry can be used, e.g. for storing data to individually adjust sensitive device parameters of biomedical analog front ends to meet precisely the target specifications. The module can be embedded in analog or mixed signal chips based on 350 nm CMOS technology.

BibTeX:
@inproceedings{Hafkemeyer:SPNVM:2008,
author = {Kristian M. Hafkemeyer and Arthur Schott and Paola Vega-Castillo and and Wolfgang H. Krautschneider},
title = {{A}nalog {C}ircuit {C}alibration with {S}ingle {P}oly {N}on-{V}olatile {M}emories},
year = {2008},
month = {11},
booktitle = {NORCHIP 2008},
note = {Tallinn, Estonia, 17.-18. Nov. 2008} }

[Abstract] [BibTeX]
Harish Balasubramaniam, Wjatscheslaw Galjan and Wolfgang H. Krautschneider

A Configurable Multi-Mode Dual Slope ADC in 130nm CMOS for Biomedical Signal Acquisition

In Tagungsband "ProRISC2008 Workshop", 2008
ProRISC 2008

Abstract:
A configurable multi mode dual slope ADC for acquisition of biomedical signals has been implemented in a 1.2Volt/ 130nm CMOS technology. Configurability of the ADC in terms of speed, resolution and accuracy make this ADC adaptable for multiple applications. The ADC has eight configurations with a highest resolution of 13 bits at 38.3kS/s and highest performance of 72.56kS/s at 11 bit resolution. The reconfigurability is achieved by use of an integrated resistor array which is set externally. Proper matching techniques and low noise design allow the ADC to have accurate detection of input signal voltages as small as 25 μV without any noise and offset reduction techniques. At a supply voltage of 1.2V the ADC can detect signals between 200mV and 1V and frequencies of up to 35 kHz nyquist rate.

BibTeX:
@inproceedings{Balasubramaniam:ADC:2008,
author = {Harish Balasubramaniam and Wjatscheslaw Galjan and Wolfgang H. Krautschneider},
title = {{A} {C}onfigurable {M}ulti-{M}ode {D}ual {S}lope {A}{D}{C} in 130nm {C}{M}{O}{S} for {B}iomedical {S}ignal {A}cquisition},
year = {2008},
month = {11},
booktitle = {ProRISC2008 Workshop},
note = {ProRISC 2008} }

[Abstract] [BibTeX]
Lait Abu-Saleh, Jakob M. Tomasik, Wjatscheslaw Galjan, Wolfgang H. Krautschneider

A SoC Based Mobile EEG Signal Acquisition System Using Multi-Sensor-Recording to Reduce Noise and Artifacts

In Tagungsband "ProRISC2008 Workshop", 2008, p. 291-294
Veldhoven, The Netherlands, 27.-28. Nov. 2008

Abstract:
Two methods are presented to reduce the effect of electrode artifacts and increase the quality of Electroencephalogram (EEG) signals. A cross-correlation method is used to reduce electrode artifacts and an autocorrelation method applies weights to the EEG input signals according to the noise content of these signals. The EEG data acquisition is achieved using a multisensor-recording technique. The methods were tested and verified using a mobile EEG signal acquisition system with a biomedical signal acquisition System on Chip (SoC). The results show an improvement in signal quality in comparison to the conventional acquisition of EEG signals.

BibTeX:
@inproceedings{AbuSaleh:EEG:2008,
author = {Lait Abu-Saleh and Jakob M. Tomasik and Wjatscheslaw Galjan and Wolfgang H. Krautschneider},
title = {{A} {S}o{C} {B}ased {M}obile {E}{E}{G} {S}ignal {A}cquisition {S}ystem {U}sing {M}ulti-{S}ensor-{R}ecording to {R}educe {N}oise and {A}rtifacts},
year = {2008},
month = {11},
booktitle = {ProRISC2008 Workshop},
note = {Veldhoven, The Netherlands, 27.-28. Nov. 2008},
pages = {291-294} }

[Abstract] [BibTeX]
Nashwa Abo Elneel, Fabian Wagner, Dietmar Schroeder, and Wolfgang H. Krautschneider

An Approach for an Efficient Transition from System-on-Chip to System-in-Package

In Tagungsband "SAFE2008 Workshop", 2008
SAFE2008

Abstract:
An approach for an efficient transition from System-on-Chip (SoC) to System-in-Package (SiP) for biomedical signal acquisition is presented. An effective work flow has been developed for the SoC-to-SiP transition and functional block separation. Block redesign for reduced interconnects has been realized. Finally, by an optimized floorplanning and die stacking for the SiP blocks an overall area reduction by a factor of 2 compared to the SoC has been achieved.

BibTeX:
@inproceedings{na:SoC-to-SiP:2008,
author = {Nashwa Abo Elneel and Fabian Wagner and Dietmar Schroeder and and Wolfgang H. Krautschneider},
title = {{A}n {A}pproach for an {E}fficient {T}ransition from {S}ystem-on-{C}hip to {S}ystem-in-{P}ackage},
year = {2008},
month = {11},
booktitle = {SAFE2008 Workshop},
note = {SAFE2008} }

[Abstract] [BibTeX]
Müller, Claas and Erdler, Gilbert and Kuhl, Matthias and Manoli, Yiannos and GmbH, Micronas

Electric voltage supply

oct 2008
EP Patent App. 20,080,018,466

Abstract:

BibTeX:
@misc{muller2008electric,
author = {M{\"u}ller and Claas and Erdler and Gilbert and Kuhl and Matthias and Manoli and Yiannos and GmbH and Micronas},
title = {{E}lectric voltage supply},
year = {2008},
month = {10},
note = {EP Patent App. 20,080,018,466} }

[BibTeX]
C. Ucurum, H. Goebel, F.A. Yildirim, W. Bauhofer, and W. Krautschneider

Hole trap related hysteresis in pentacene field-effect transistors

Artikel in "Journal of Applied Physics", vol. 104, p. 84501, 2008

Abstract:
We have investigated hysteresis in pentacene-based field-effect transistors with SiO2 as gate dielectric. A clear hysteresis behavior in tranfer and output characteristics is reported. Measurements show that the observed hysteresis is due to hole trapping in the pentacene film. Long time constants of the trapping/detrapping mechanisms are demonstrated through transient measurements. An initialization routine to be performed prior to measurements is proposed to enable reproducible and reliable measurements on pentacene transistors.

BibTeX:
@article{Krautschneider:trap:2008,
author = {C. Ucurum and H. Goebel and F.A. Yildirim and W. Bauhofer and and W. Krautschneider},
title = {{H}ole trap related hysteresis in pentacene field-effect transistors},
year = {2008},
month = {10},
journal = {Journal of Applied Physics},
pages = {84501},
volume = {104} }

[Abstract] [BibTeX]
Sebastian Georgi, Christoph Weyer, Martin Stemick, Christian Renner, Felix Hackbarth, Ulf Pilz, Jens Eichmann, Tobias Pilsak, Harald Sauff, Luis Torres, Klaus Dembowski, Fabian Wagner

SomSeD: An Interdisciplinary Approach for Developing Wireless Sensor Networks

In Tagungsband "7. GI/ITG KuVS Fachgespräch Drahtlose Sensornetze", 2008
Berlin, 25.-26. September 2008

Abstract:
The research field "Self organized mobile Sensor and Data-networks" (SomSeD) is introduced. Its purpose is the investigation of Wireless Sensor Networks (WSN). It benefits from interdisciplinary exchange between various institutes of the Hamburg University of Technology (TUHH). Due to different design constraints (such as energy-efficiency and package size) compared to well known classical computer networks, all aspects of the development of WSNs must be reconsidered. This paper describes the advantage of having experts of various faculties both in computer science and electrical engineering in a single research field. In addition to the introduction of the participating institutes, the deployment of a WSN on the TUHH campus will be outlined.

BibTeX:
@inproceedings{Sebastian_Georgi:SomSeD:2008,
author = {Sebastian Georgi and Christoph Weyer and Martin Stemick and Christian Renner and Felix Hackbarth and Ulf Pilz and Jens Eichmann and Tobias Pilsak and Harald Sauff and Luis Torres and Klaus Dembowski and Fabian Wagner},
title = {{S}om{S}e{D}: {A}n {I}nterdisciplinary {A}pproach for {D}eveloping {W}ireless {S}ensor {N}etworks},
year = {2008},
month = {09},
booktitle = {7. GI/ITG KuVS Fachgespr{\"a}ch Drahtlose Sensornetze},
note = {Berlin, 25.-26. September 2008} }

[Abstract] [BibTeX]
Ronald M. Meixner and Holger H. Göbel and Haidi Qiu and Cihan Ucurum and Wilfried Klix and Roland Stenzel and Faruk Altan Yildirim and Wolfgang Bauhofer and Wolfgang H. Krautschneider

A Physical-Based PSPICE Compact Model for Poly(3-hexylthiophene) Organic Field-Effect Transistors

Artikel in "IEEE Transactions on Electron Devices", vol. 55, Nr. 7, p. 1776-1781, 2008

Abstract:
A PSPICE model for organic thin-film transistors(OFETs) employing poly(3-hexylthiophene-2,5-diyl) (P3HT) is derived. This model is based on the standard MOSFET Berkeley Short-channel IGFET Model equations, where the voltage dependences of the charge carrier mobility and the bulk conductivity are modeled by additional voltage-controlled current sources. The model requires only five additional parameters, which can be extracted from the output characteristics of the device. The model equations have been verified by device simulations, and the simulation results have been compared with measurements of P3HT OFETs.

BibTeX:
@article{Krautschneider:PSPICE:2008,
author = {Ronald M. Meixner and Holger H. G{\"o}bel and Haidi Qiu and Cihan Ucurum and Wilfried Klix and Roland Stenzel and Faruk Altan Yildirim and Wolfgang Bauhofer and Wolfgang H. Krautschneider},
title = {{A} {P}hysical-{B}ased {P}{S}{P}{I}{C}{E} {C}ompact {M}odel for {P}oly(3-hexylthiophene) {O}rganic {F}ield-{E}ffect {T}ransistors},
year = {2008},
month = {07},
journal = {IEEE Transactions on Electron Devices},
number = {7},
pages = {1776-1781},
volume = {55} }

[Abstract] [BibTeX]
A. Avellán and S. Jakschik and B. Tippelt and S. Kudelka and W. Krautschneider

Post Hard Breakdown Conduction in MOS Capacitors With Silicon and Aluminum Oxide as Dielectric

Artikel in "IEEE Electron Device Letters", vol. 29, Nr. 4, p. 366-368, 2008

Abstract:
Abstract—I–V curves as a function of voltage and temperature of MOS capacitors with silicon oxide and aluminum oxide after dielectric breakdown are presented. A different temperature behavior in accumulation is observed. The samples with aluminum oxide show an entirely positive temperature dependence, whereas the samples with silicon oxide have a crossover of the temperature dependent curves. This difference of the two sample types is attributed to the charge distribution according to the material of the breakdown spot, silicon for the case of silicon oxide, and aluminum for aluminum oxide. Thus, in the first case, a p-n junction is formed while a Schottky contact is created in the latter case. Atlas simulations and TEM analysis are presented that confirm this hypothesis. Index Terms—Current, dielectric breakdown, MOS devices.

BibTeX:
@article{Avellan:2008,
author = {A. Avellán and S. Jakschik and B. Tippelt and S. Kudelka and W. Krautschneider},
title = {{P}ost {H}ard {B}reakdown {C}onduction in {M}{O}{S} {C}apacitors {W}ith {S}ilicon and {A}luminum {O}xide as {D}ielectric},
year = {2008},
month = {04},
journal = {IEEE Electron Device Letters},
number = {4},
pages = {366-368},
volume = {29} }

[Abstract] [BibTeX]
N. Van Helleputte, J.M. Tomasik, W. Galjan, A. Mora-Sanchez, D. Schroeder, W.H. Krautschneider, R. Puers

A flexible system-on-chip (SoC) for biomedical signal acquisition and processing

Artikel in "Sensors and Actuators A: Physical", vol. 142, p. 361-368, 2008

Abstract:
In this paper, a system-on-chip (SoC) that combines multiple biomedical signal acquisition (ECG, EEG, Ep, and respiration-related signals) with on-chip digital processing is presented. The embedded flexibility of the SoC facilitates its use in a multitude of applications. Time-sharing of the operational transconductance amplifier within the analog-to-digital converters is employed in order to lower the power consumption and to save area. Built-in self-test (BIST) and autocalibration capabilities are included to enhance its reliability. The low noise analog front-end (AFE) is fully programmable to achieve the best power-noise trade-off for the application at hand. A prototype has been manufactured in 0.35 µn 3.3 V CMOS technology.

BibTeX:
@article{Tomasik:Actuators:2008,
author = {N. Van Helleputte and J.M. Tomasik and W. Galjan and A. Mora-Sanchez and D. Schroeder and W.H. Krautschneider and R. Puers},
title = {{A} flexible system-on-chip ({S}o{C}) for biomedical signal acquisition and processing},
year = {2008},
month = {03},
journal = {Sensors and Actuators A: Physical},
pages = {361-368},
volume = {142} }

[Abstract] [BibTeX]
F. Wagner and Ch. Jakobi and J. Tomasik and K. Hafkemeyer and W. Galjan and D. Schroeder and W. Krautschneider

Design and Implementation of an Automated Test Environment for Signal-Acquisition ASICs

Artikel in "SCD Dresden", 2008

Abstract:
abstract: This paper presents the design of a test environment for a small number of signal acquisition ASICs. To keep the test time and cost as low as possible, an FPGA is used to translate the control commands, that are sent by a PC, to the chips. As the FPGA is flexible in programming and the sockets are removable, a very flexible test environment was developed.

BibTeX:
@article{Wagner:2008,
author = {F. Wagner and Ch. Jakobi and J. Tomasik and K. Hafkemeyer and W. Galjan and D. Schroeder and W. Krautschneider},
title = {{D}esign and {I}mplementation of an {A}utomated {T}est {E}nvironment for {S}ignal-{A}cquisition {A}{S}{I}{C}s},
year = {2008},
journal = {SCD Dresden} }

[Abstract] [BibTeX]
F. A. Yildrim, R. R. Schliewe, W. Bauhofer, R. M. Meixner, H. Goebel, W. Krautschneider

Gate insulators and interface effects in organic thin-film transistors

Artikel in "Elsevier ScienceDirect Organic Electronics", vol. 9, 2008

Abstract:

BibTeX:
@article{Yildrim:Elsevier:2008,
author = {F. A. Yildrim and R. R. Schliewe and W. Bauhofer and R. M. Meixner and H. Goebel and W. Krautschneider},
title = {{G}ate insulators and interface effects in organic thin-film transistors},
year = {2008},
journal = {Elsevier ScienceDirect Organic Electronics},
volume = {9} }

[BibTeX]
A. Domdey, K.M. Hafkemeyer, W.H. Krautschneider, and D. Schroeder

Simultaneous large-scale reliability analysis of ultra-thin MOS gate dielectrics using an automated test system

In Tagungsband "Advances in Radio Science", 2008, p. 205-207
Kleinheubacher Berichte

Abstract:
This article presents an automated test system targeting the large-scale analysis of ultra-thin MOS gate dielectric degradation. The system allows for stress tests at elevated temperatures as well as supply voltages and long-term tests of thousands of MOS devices simultaneously. The aim is to build-up large and hence significant statistics about the degradation process as a function of time.

BibTeX:
@inproceedings{Domdey:MOS:2008,
author = {A. Domdey and K.M. Hafkemeyer and W.H. Krautschneider and and D. Schroeder},
title = {{S}imultaneous large-scale reliability analysis of ultra-thin {M}{O}{S} gate dielectrics using an automated test system},
year = {2008},
booktitle = {Advances in Radio Science},
note = {Kleinheubacher Berichte},
pages = {205-207} }

[Abstract] [BibTeX]
Gieschke, P and Nurcahyo, Y and Herrmann, M and Kuhl, M and Ruther, P and Paul, O

Integrated stress mapping chip with 32 piezoresistive field effect transistors

In Tagungsband "Proc. Eurosensors XXII", 2008, p. 292--295

Abstract:

BibTeX:
@inproceedings{gieschke2008integrated,
author = {Gieschke and P and Nurcahyo and Y and Herrmann and M and Kuhl and M and Ruther and P and Paul and O},
title = {{I}ntegrated stress mapping chip with 32 piezoresistive field effect transistors},
year = {2008},
booktitle = {Proc. Eurosensors XXII},
pages = {292--295} }

[BibTeX]

top

2007

A. Weber, A. Birner, W. Krautschneider

DRAM retention tail improvement by trap passivation

Artikel in "Solid-State Electronics", vol. 51, p. 1534-1539, 2007

Abstract:
A very efficient method to reduce gate induced drain leakage (GIDL) as the dominant leakage path in the tail part of DRAM data retention time distribution is presented. Different to other reports, GIDL is addressed by trap passivation instead of lowering of electric fields. Stable passivation of traps is achieved by implantation of fluorine into S/D regions of 512 Mbit and 1 Gbit DRAMs in 110 nm technology. It was found that the position of the F-implant within the process flow plays a key role to enable trap reduction and retention tail improvement. Systematic implant experiments were carried out resulting in a failcount reduction of up to 40%. Detailed activation energy analysis on individual memory cells confirms the validity of the retention tail model and the selective reduction of GIDL traps by F-implantation.

BibTeX:
@article{Weber:tail:2007,
author = {A. Weber and A. Birner and W. Krautschneider},
title = {{D}{R}{A}{M} retention tail improvement by trap passivation},
year = {2007},
month = {11},
journal = {Solid-State Electronics},
pages = {1534-1539},
volume = {51} }

[Abstract] [BibTeX] [DOI]
Andreas Domdey, Kristian Hafkemeyer, Dietmar Schröder, Wolfgang Krautschneider

Automated system for simultaneous large-scale stress test of ultra-thin gate dielectrics to analyse reliability

In Tagungsband "ProRISC2007 Workshop", 2007
ProRISC

Abstract:

BibTeX:
@inproceedings{Domdey:ProRISC:2007,
author = {Andreas Domdey and Kristian Hafkemeyer and Dietmar Schr{\"o}der and Wolfgang Krautschneider},
title = {{A}utomated system for simultaneous large-scale stress test of ultra-thin gate dielectrics to analyse reliability},
year = {2007},
month = {11},
booktitle = {ProRISC2007 Workshop},
note = {ProRISC} }

[BibTeX]
Kristian M. Hafkemeyer, Wjatscheslaw Galjan, Jakob M. Tomasik, Dietmar Schroeder, Wolfgang H. Krautschneider

System-on-Chip Approach for Biomedical Signal Acquisition

In Tagungsband "ProRISC2007 Workshop", 2007
ProRISC2007

Abstract:
Abstract—A system-on-chip (SoC) approach for biomedical signal data acquisition in 0.35 μm 3.3 V CMOS technology is presented. The SoC is adaptable for multiple specific applications and is intended to be utilized in a low-power or a low-noise biomedical domain. A new approach for CMRR calibration technique has been used achieving a CMRR value larger than 80 dB at large DC-offsets.

BibTeX:
@inproceedings{Hafkemeyer:ProRISC:2007,
author = {Kristian M. Hafkemeyer and Wjatscheslaw Galjan and Jakob M. Tomasik and Dietmar Schroeder and Wolfgang H. Krautschneider},
title = {{S}ystem-on-{C}hip {A}pproach for {B}iomedical {S}ignal {A}cquisition},
year = {2007},
month = {11},
booktitle = {ProRISC2007 Workshop},
note = {ProRISC2007} }

[Abstract] [BibTeX]
D. Liebig, W. Krautschneider, K. Schünemann, K. Hafkemeyer, and A. Domdey

First Principle Cellular Automata Simulation of Transport in Short Channel MOS-FET for Self-consistent Atomistic Modeling of Degradation in Ultra Thin Silicon-Dioxide Dielectrics

In Tagungsband "SAFE 2007", 2007
SAFE2007

Abstract:
Abstract—A new fully self-consistent cellular automata physical transport simulation is presented. In a numerically high efficient way semi-classical three dimensional and two dimensional lateral transport in quantized sub bands is calculated. The simulator accurately calculates output characteristics and gives insight into all relevant microscopic details of electron and hole transport by accurately calculating the distribution function solving the Boltzmann transport equation. By coupling the device simulator with atomistic molecular dynamics calculation of atom-reconfiguration in the SiO2 layer is achieved.

BibTeX:
@inproceedings{Liebig:MOS-FET:2007,
author = {D. Liebig and W. Krautschneider and K. Sch{\"u}nemann and K. Hafkemeyer and and A. Domdey},
title = {{F}irst {P}rinciple {C}ellular {A}utomata {S}imulation of {T}ransport in {S}hort {C}hannel {M}{O}{S}-{F}{E}{T} for {S}elf-consistent {A}tomistic {M}odeling of {D}egradation in {U}ltra {T}hin {S}ilicon-{D}ioxide {D}ielectrics},
year = {2007},
month = {11},
booktitle = {SAFE 2007},
note = {SAFE2007} }

[Abstract] [BibTeX]
P. Meier auf der Heide, C. Bronskowski, J.M. Tomasik, D. Schroeder

A CMOS operational amplifier with constant 68° phase margin over its whole range of noise-power trade-off programmability

In Tagungsband "33th European Solid-State Circuits Conference (ESSCIRC 2007)", 2007, p. 452-455, Herausgeber D. Schmitt-Landsiedel, T. Noll
Munich, Germany, 11.-13. September 2007

Abstract:
The problem of variable phase margin of our programmable Operational Amplifier (OpAmp), which was presented at ESSCIRC 2006, has been solved. The OpAmp is programmable concerning noise and power consumption, while the phase margin is kept at an approximately constant value of 68° for the whole range of programmability. Experimental results for a 0.35 μm CMOS OpAmp show either low noise of 3.6 nV/sqrt(Hz) or low power consumption of 59 μW, and a phase margin variation of only 6°.

BibTeX:
@inproceedings{MadHeide:ESSCIRC:2007,
author = {P. Meier auf der Heide and C. Bronskowski and J.M. Tomasik and D. Schroeder},
title = {{A} {C}{M}{O}{S} operational amplifier with constant 68° phase margin over its whole range of noise-power trade-off programmability},
year = {2007},
month = {09},
booktitle = {33th European Solid-State Circuits Conference (ESSCIRC 2007)},
editor = {D. Schmitt-Landsiedel, T. Noll},
note = {Munich, Germany, 11.-13. September 2007},
pages = {452-455} }

[Abstract] [BibTeX]
W. von Emden, W. Krautschneider, G. Tempel, R. Hagenbeck and M.F. Beug

A modified constant field charge pumping method for sensitive profiling of near-junction charges

In Tagungsband "ESSDERC 2007", 2007
Veldhofen/The Netherlands

Abstract:
Abstract—The functionality of nonvolatile memories with lateral multi-bit charge storage capabilities like NROM/ TwinFlash is critically related to spatial separation of the injected charge quantities to discriminate different logical states. In this paper we develop an adapted methodology to extract local charge densities based on the constant field charge pumping method. Our method overcomes the problem of non elf-consistency of conventional constant field charge pumping by determination of the spatial coordinate after every injection step. The method is demonstrated to directly extract the electron/ hole mismatch after program and erase injection.

BibTeX:
@inproceedings{vEmden:charges:2007,
author = {W. von Emden and W. Krautschneider and G. Tempel and R. Hagenbeck and M.F. Beug},
title = {{A} modified constant field charge pumping method for sensitive profiling of near-junction charges},
year = {2007},
month = {09},
booktitle = {ESSDERC 2007},
note = {Veldhofen/The Netherlands} }

[Abstract] [BibTeX]
Alexander Mora-Sánchez

Sigma-Delta Analog-to-Digital Modulators with a Single Operational Transconductance Amplifier for Low-Power SoC Design in Biomedical Applications

Dissertation an der TUHH, 2007

Abstract:

BibTeX:
@phdthesis{Sigma:Mora:2007,
author = {Alexander Mora-Sánchez},
title = {{S}igma-{D}elta {A}nalog-to-{D}igital {M}odulators with a {S}ingle {O}perational {T}ransconductance {A}mplifier for {L}ow-{P}ower {S}o{C} {D}esign in {B}iomedical {A}pplications},
year = {2007},
month = {08},
school = {TUHH} }

[BibTeX]
C. Bronskowski, D. Schroeder

Systematic design of programmable operational amplifiers with noise–power trade-off

Artikel in "IET Circuits, Devices & Systems", vol. 1, Nr. 1, p. 41--49, 2007

Abstract:
A methodology for the systematic design of a programmable operational amplifier (opamp) is described. With this methodology, the opamp is programmable concerning noise and power consumption while keeping the stability for the whole operation range with a constant phase margin of 70°. The theoretical model is developed with the help of the transfer characteristics of the opamp determining the degrees of freedom. Experimental results for a 0.35-mm CMOS opamp show either ultra low-noise of 2 nV/sqrt(Hz) or low-power consumption of 140 uW while keeping the opamp stable over the whole range of programmability.

BibTeX:
@article{Bronsk:2007,
author = {C. Bronskowski and D. Schroeder},
title = {{S}ystematic design of programmable operational amplifiers with noise–power trade-off},
year = {2007},
month = {01},
journal = {IET Circuits, Devices {&} Systems},
number = {1},
pages = {41--49},
volume = {1} }

[Abstract] [BibTeX]
A. Hanoun, H. Manteuffel, F. Mayer-Lindenberg, W. Galjan

Architecture of a pipelined datapath coarse-grain reconfigurable coprocessor array

Artikel in "Proc. IEEE Intern. Conf. on Signal Processing and Communication", p. 832-835, 2007

Abstract:
In this paper, we present the architecture of a coarsegrain reconfigurable cell designed for pipelined arithmetic computing applications. We apply the concept of separation between control-path and computation-path logic in the so-called reconfigurable coprocessor array architecture. Variations of the cells are implemented on CMOS 0.35 technology and subjected to a group of benchmarks. The resulting delay area products showed that double-ALU cells have about 50% smaller areadelay product than the single-ALU cell has.

BibTeX:
@article{Galjan:array:2007,
author = {A. Hanoun and H. Manteuffel and F. Mayer-Lindenberg and W. Galjan},
title = {{A}rchitecture of a pipelined datapath coarse-grain reconfigurable coprocessor array},
year = {2007},
journal = {Proc. IEEE Intern. Conf. on Signal Processing and Communication},
pages = {832-835} }

[Abstract] [BibTeX]
Renato Rimolo-Donadio and Antonio J. Acosta and Wolfgang Krautschneider

Asynchronous Staggered Set/Reset Techniques for Low-Noise Applications

Artikel in "ISCAS Conference", 2007

Abstract:
Abstract- This work proposes the usage of staggered initialization schemes in digital sequential circuits as complementary technique to reduce the simultaneous switching activity, pursuing the minimization of switching noise levels. Simultaneous switching noise (SSN) generation has been evaluated in digital sequential circuits during initialization and a general synthesis methodology has been proposed in order to implement the staggered initialization schemes at system level. The evaluation of this methodology was made with counter arrays using 0.35μm AMS library cells. In addition, timing considerations, clock suppression during initialization cycles, and the type of cell chosen to implement the staggered distribution are discussed. Main results include noise reduction levels, by suppression of power supply fluctuations, up to 66.7% in post-layout simulations when using staggered techniques enhanced with clock gating during initialization.

BibTeX:
@article{Rimolo-Donadio:ISCAS:2007,
author = {Renato Rimolo-Donadio and Antonio J. Acosta and Wolfgang Krautschneider},
title = {{A}synchronous {S}taggered {S}et/{R}eset {T}echniques for {L}ow-{N}oise {A}pplications},
year = {2007},
journal = {ISCAS Conference} }

[Abstract] [BibTeX]
Jakob M. Tomasik, Wjatscheslaw Galjan

M3C: A Multi Monitoring Medical Chip for Homecare Applications

Artikel in "Activity Report 2006, Europractice IC Service", 2007

Abstract:

BibTeX:
@article{Europractice06,
author = {Jakob M. Tomasik and Wjatscheslaw Galjan},
title = {{M}3{C}: {A} {M}ulti {M}onitoring {M}edical {C}hip for {H}omecare {A}pplications},
year = {2007},
journal = {Activity Report 2006, Europractice IC Service} }

[BibTeX]

top

2006

Böscke, T., Govindarajan, S., Fachmann, C., Heitmann, J., Avellan, A., Schröder, U., Kudelka, S., Hirsch, P.D., Krug, C., Hung, P.Y., Song, S.C., Ju, B.S., Price, G., Pant, G., Gnade, B.E., Krautschneider, W., Lee, B.-H., Jammy, R.

Tetragonal phase stabilization by doping as an enabler of thermally stable HfO2 based MIM and MIS capacitors for sub 50 nm deep trench DRAM

In Tagungsband "International Electron Device Meeting", 2006
IEDM, San Francisco

Abstract:
We show for the first time that control of the crystalline phases of HfO2 by tetravalent (Si) and trivalent (Y,Gd) dopants enables significant improvements in the capacitance equivalent thickness (CET) and leakage current in capacitors targeting deep trench (DT) DRAM applications. By applying these findings, we present a MIM capacitor meeting the requirements of the 40 nm node. A CET <1.3 nm was achieved at the deep trench DRAM thermal budget of 1000°C.

BibTeX:
@inproceedings{B{\"o}scke:HfO2:2006,
author = {B{\"o}scke and T. and Govindarajan and S. and Fachmann and C. and Heitmann and J. and Avellan and A. and Schr{\"o}der and U. and Kudelka and S. and Hirsch and P.D. and Krug and C. and Hung and P.Y. and Song and S.C. and Ju and B.S. and Price and G. and Pant and G. and Gnade and B.E. and Krautschneider and W. and Lee and B.-H. and Jammy and R.},
title = {{T}etragonal phase stabilization by doping as an enabler of thermally stable {H}f{O}2 based {M}{I}{M} and {M}{I}{S} capacitors for sub 50 nm deep trench {D}{R}{A}{M}},
year = {2006},
month = {12},
booktitle = {International Electron Device Meeting},
note = {IEDM, San Francisco} }

[Abstract] [BibTeX]
A. Domdey, K. Hafkemeyer, T. Knudsen, W. Krautschneider

First principles study of the degradation of silicon-dioxide gate dielectrics

In Tagungsband "Proc. 9th Workshop on Semiconductor Advances for Future Electronics", 2006, Nr. 9
SAFE2006

Abstract:
Abstract—A large-scale automated test system is presented that permits to analyse the gate dielectric degradation of thousands of MOS devices simultaneously. The system supports stress tests at elevated temperature and supply voltage as well as longterm tests. It aims at the creation of large and thus significant statistics about the degradation process as a function of time.

BibTeX:
@inproceedings{Domdey:gate:2006,
author = {A. Domdey and K. Hafkemeyer and T. Knudsen and W. Krautschneider},
title = {{F}irst principles study of the degradation of silicon-dioxide gate dielectrics},
year = {2006},
month = {11},
booktitle = {Proc. 9th Workshop on Semiconductor Advances for Future Electronics},
note = {SAFE2006},
number = {9} }

[Abstract] [BibTeX]
Kristian Hafkemeyer, Andreas Domdey, Wolfgang H. Krautschneider

Design of a process-parameter independent test-structure for reliability tests

In Tagungsband "ProRISC2006 Workshop, Veldhoven (The Netherlands), 23.-24. November 2006", 2006
ProRISC

Abstract:
A test-structure for statistical measurements of MOSFET failures caused by the time dependent eielectric breakdown with an external microcontroller is presented. The concept is technology independent and can be used to adjust and verify existing breakdown models.

BibTeX:
@inproceedings{RELTEST2006,
author = {Kristian Hafkemeyer and Andreas Domdey and Wolfgang H. Krautschneider},
title = {{D}esign of a process-parameter independent test-structure for reliability tests},
year = {2006},
month = {11},
booktitle = {ProRISC2006 Workshop, Veldhoven (The Netherlands), 23.-24. November 2006},
note = {ProRISC} }

[Abstract] [BibTeX]
Galjan, W. and Hanoun, A. and Krautschneider, W.H. and Mayer-Lindenberg, F.

Distributed processor network on a single chip

In Tagungsband "ProRISC2006 Workshop, Veldhoven (The Netherlands), 23.-24. November 2006", 2006
ProRISC2006

Abstract:
Abstract—The Parallel-CPUs-On-Chip project aims at implementing a distributed computing architectures with scalable performance. As a proof of concept, we integrated two 16-bit sequential microprocessors called CPU-III on a chip. The CPU-III supports many vital features for controlling including multi-threading, two-stage execution pipelining and an enhanced coprocessor interface which also supports multi-threading and coprocessor pipelining.

BibTeX:
@inproceedings{Galjan:chip:2006,
author = {Galjan and W. and Hanoun and A. and Krautschneider and W.H. and Mayer-Lindenberg and F.},
title = {{D}istributed processor network on a single chip},
year = {2006},
month = {11},
booktitle = {ProRISC2006 Workshop, Veldhoven (The Netherlands), 23.-24. November 2006},
note = {ProRISC2006} }

[Abstract] [BibTeX]
Rimolo-Donadio, R. and Mora-Sanchez, A. and Schroeder, D.

High slew rate configurabel class AB fully differential operational transconductance amplifier for switched capacitor circuit applications

In Tagungsband "ProRisc2006 Workshop, Veldhoven (The Netherlands), 23.-24. November 2006", 2006
ProRisc Veldhoven 23.-24. November 2006

Abstract:
Abstract—In this paper, a configurable dynamically-biased class AB operational transconductance amplifier (OTA) for switched-capacitor (SC) circuit applications, based on the utilization of the flipped voltage follower (FVF), is presented. The proposed OTA offers high slew rate, low power consumption, and its speed can be configured to work in a unitary-gain bandwidth (UGBW) range from about 2MHz up to 50MHz. The amplifier has been designed to operate at 3.3V using a 0.35um CMOS technology. Post-layout simulation results show that the OTA is suitable for the design of low-power and high-slew rate SC circuit applications, offering better performance in those aspects with respect to classical OTA architectures.

BibTeX:
@inproceedings{Rimolo:slew:2006,
author = {Rimolo-Donadio and R. and Mora-Sanchez and A. and Schroeder and D.},
title = {{H}igh slew rate configurabel class {A}{B} fully differential operational transconductance amplifier for switched capacitor circuit applications},
year = {2006},
month = {11},
booktitle = {ProRisc2006 Workshop, Veldhoven (The Netherlands), 23.-24. November 2006},
note = {ProRisc Veldhoven 23.-24. November 2006} }

[Abstract] [BibTeX]
Carsten Bronskowski, Dietmar Schroeder

An ultra low-noise CMOS operational amplifier with programmable noise-power trade-off

In Tagungsband "32th European Solid-State Circuits Conference (ESSCIRC 2006)", 2006, p. 368-371, Herausgeber C. Enz, M. Declercq, Y. Leblebici
Montreux, Switzerland, 19.-21. September 2006

Abstract:
A programmable operational amplifier (OpAmp) concerning noise and power consumption is described. Key design issues for achieving programmability of a preselected OpAmp architecture are discussed. Experimental results for a 0.35 um CMOS OpAmp show either ultra low noise of 2 nV/sqrt(Hz) or low power consumption of 140 uW. The OpAmp remains stable over the whole range of programmability.

BibTeX:
@inproceedings{Bronskowski:ESSCIRC:2006,
author = {Carsten Bronskowski and Dietmar Schroeder},
title = {{A}n ultra low-noise {C}{M}{O}{S} operational amplifier with programmable noise-power trade-off},
year = {2006},
month = {09},
booktitle = {32th European Solid-State Circuits Conference (ESSCIRC 2006)},
editor = {C. Enz, M. Declercq, Y. Leblebici},
note = {Montreux, Switzerland, 19.-21. September 2006},
pages = {368-371} }

[Abstract] [BibTeX]
Alexander Mora-Sanchez, Dietmar Schroeder, Wolfgang H. Krautschneider

A 3rd-order single-OTA Sigma-Delta modulator for low-power mixed-signal system-on-chip applications

In Tagungsband "ANALOG 2006", Verlag VDE-Verlag, 2006, vol. 196, Serie "ITG-Fachbericht", p. 21--26
9. ITG/GMM-Fachtagung, Dresden, 27.-29. September 2006

Abstract:
This paper brings forward a 3rd-order single operational transconductance amplifier (OTA) sigma-delta analogue-to-digital (A/D) modulator as a means to achieve low-power A/D conversion on mixed-signal system-on-chip (SoC) designs. The proposed concept is based on the utilisation of a single OTA within the modulator structure which is shared in time in order to perform concurrently sampling and integration. Thus, power consumption as well as on-chip area can be saved since only one OTA is used. The paper also discusses the impact of nonidealities (e.g. finite gain and bandwidth of the OTA, noise folding, switch on-resistance, etc.) on the performance of the proposed modulator. A prototype of the 3rd-order modulator based on a 0.35 μm CMOS technology is presented in order to prove the correctness of the proposed concept.

BibTeX:
@inproceedings{Mora:OTA:2006,
author = {Alexander Mora-Sanchez and Dietmar Schroeder and Wolfgang H. Krautschneider},
title = {{A} 3rd-order single-{O}{T}{A} {S}igma-{D}elta modulator for low-power mixed-signal system-on-chip applications},
year = {2006},
month = {09},
booktitle = {ANALOG 2006},
note = {9. ITG/GMM-Fachtagung, Dresden, 27.-29. September 2006},
pages = {21--26},
publisher = {VDE-Verlag},
series = {ITG-Fachbericht},
volume = {196} }

[Abstract] [BibTeX]
N. Van Helleputte, A. Mora-Sanchez, W. Galjan, J. M. Tomasik, D. Schroeder, W. H. Krautschneider and R. Puers

A flexible system-on-chip (SoC) for biomedical signal acquisition and processing

In Tagungsband "EUROSENSORS XX", 2006
Goeteborg, Sweden, 17th-20th September 2006

Abstract:
In this paper a system-on-chip (SoC) that combines multiple biomedical signal acquisition (ECG, EEG, EP and respiration-related signals) with on-chip digital signal processing is presented. The embedded flexibility of the SoC facilitates its use in a multitude of applications. Time-sharing of the operational transconductance amplifier within the analog-to-digital converters is employed in order to lower the power consumption and to save area. Built-in self-test (BIST) and autocalibration capabilities are included to enhance its reliability. The low noise analog front end is fully programmable to achieve the best power-noise trade-off for the application at hand. A prototype has been manufactured in 0.35μm 3.3 V CMOS technology.

BibTeX:
@inproceedings{Eurosens:2006,
author = {N. Van Helleputte and A. Mora-Sanchez and W. Galjan and J. M. Tomasik and D. Schroeder and W. H. Krautschneider and R. Puers},
title = {{A} flexible system-on-chip ({S}o{C}) for biomedical signal acquisition and processing},
year = {2006},
month = {09},
booktitle = {EUROSENSORS XX},
note = {Goeteborg, Sweden, 17th-20th September 2006} }

[Abstract] [BibTeX]
Galjan, W. and Hanoun, A. and Krautschneider, W.H. and Mayer-Lindenberg, F.

Architectures for system-on-chip computation units

In Tagungsband "Kleinheubacher Tagung", 2006
Kleinheubacher Tagung

Abstract:
The trend for minimizing system sizes and reducing the power consumption results in demand for Application Specific Integrated Circuits (ASICs). Especially biomedical applications with implantable devices are critical for these system parameters. As biomedical signals have almost an analog character, digitalizing and after that applying filtering algorithms is the usual procedure for signal acquisition systems. For this application field two different strategies of digital computation units have been pursued. The first architecture, it was implemented and manufactured in 0.35μm CMOS technology, consists of a powerful 16-bit fix-point DSP with 17kB on chip memory. This DSP, which is licensed IP-Core (Evatronix) written in Verilog, supports one-cycle MAC-instructions and has eight auxiliary registers for different addressing modes, allowing signal filtering of more than ten 16-bit ADC-channels sequentially. To comply with very strong power consumption limitations the digital unit is able to reduce the clock frequency for every system block and also its own. This scaling of computation power and of the resolution of ADC-chains allows to use this SoC for different biological signals. The idea for the second implementation is to allow parallelized computation and to divide the whole system in small clusters. Therefore an architecture was developed, which allows to connect together through a parallel bus a maximum of 8 CPUs. For testing purpose an ASIC was implemented consisting mainly of two identical 16-bit micro-CPUs, which are connected together through a parallel bus. Both threads, running on the both CPUs, execute independent tasks but share the same coprocessor that typically supplies some complex application specific operations. The coprocessor interface strongly supports configurable pipelining, which enforces the stepwise controlling of computations on the coprocessor. Because the design of applicationspecific computation units can be reduced to a design of only one coprocessor, this system is flexible and scalable to different applications.

BibTeX:
@inproceedings{Galjan:units:2006,
author = {Galjan and W. and Hanoun and A. and Krautschneider and W.H. and Mayer-Lindenberg and F.},
title = {{A}rchitectures for system-on-chip computation units},
year = {2006},
month = {09},
booktitle = {Kleinheubacher Tagung},
note = {Kleinheubacher Tagung} }

[Abstract] [BibTeX]
Tomasik, J.M., Krautschneider, W.H.

Review of 1/f noise in MOSFETs and development of an experimental opamp using switched biasing to reduce 1/f noise

In Tagungsband "Kleinheubacher Tagung", 2006
Kleinheubacher Tagung

Abstract:
1/f noise in metal-oxide-semiconductor field-effect transistors has been investigated for more than 40 years, still the theory is developed further to allow a better understanding of the underlying noise process. In particular, the question of how 1/f noise will scale with smaller technologies is a controversy topic. Two distinct explanations of 1/f noise emerged at the beginning of the investigation, the ΔN model that correlates the noise to fluctuations in the number of charge carriers and the Δμ model that correlates the noise to mobility fluctuations. These two models were merged together by Hung et al. in the unified 1/f noise model resulting in the dependency of the drain current fluctuation ΔI as a function of both ΔN and Δμ. Despite this outstanding model that is used in modern circuit simulation models like BSIM, there is still an extensive research in 1/f noise in MOSFETs raising new questions. An example is the effect of switching a MOSFET periodically from accumulation to inversion discovered by Bloom and Nemirovsky. This technique allows a physically based reduction of 1/f noise and the effect cannot be derived from the above models. An extensive research on this topic has been started by the publication of Gierkink et al. To exploit the switched bias effect in an analog circuit we developed an experimental opamp in CMOS 0.35μm technology using this technique. For this purpose we altered a regular opamp design already designed to be very low-noise. Measurements showed that the noise power could be reduced by a factor of 1.6 by switching some of the opamp’s MOSFETs periodically from accumulation to inversion.

BibTeX:
@inproceedings{Tomasik:1durchf:2006,
author = {Tomasik and J.M. and Krautschneider and W.H.},
title = {{R}eview of 1/f noise in {M}{O}{S}{F}{E}{T}s and development of an experimental opamp using switched biasing to reduce 1/f noise},
year = {2006},
month = {09},
booktitle = {Kleinheubacher Tagung},
note = {Kleinheubacher Tagung} }

[Abstract] [BibTeX]
Böscke, T. and Kudelka, A. and Sänger, A. and Müller, J. and Krautschneider, W.H.

Investigation of the high temperature stability of TiN-Al203-TiN capacitiors for sub 50 nm deep trench DRAM

In Tagungsband "Proc. 36th European Solid-State Device Research Conference (ESSDERC 2006)", 2006
ESSDERC 2006, Montreux

Abstract:
Abstract—This paper deals with the investigation of mechanisms leading to a degradation of the electrical properties of titanium nitride - aluminum oxide - titanium nitride capacitors at high temperatures. Several degradation mechanisms could be identified by thorough electrical and physical characterization. The findings will serve as a future guide to build thermally stable MIM capacitors.

BibTeX:
@inproceedings{B{\"o}scke:TiN:2006,
author = {B{\"o}scke and T. and Kudelka and A. and S{\"a}nger and A. and M{\"u}ller and J. and Krautschneider and W.H.},
title = {{I}nvestigation of the high temperature stability of {T}i{N}-{A}l203-{T}i{N} capacitiors for sub 50 nm deep trench {D}{R}{A}{M}},
year = {2006},
month = {09},
booktitle = {Proc. 36th European Solid-State Device Research Conference (ESSDERC 2006)},
note = {ESSDERC 2006, Montreux} }

[Abstract] [BibTeX]
Weber, A and Birner, A. and Krautschneider, W.

Retention tail improvement for 1 GBit DRAMs through trap passivation confirmed by activation energy analysis

In Tagungsband "Proc. 36th European Solid-State Device Research Conference (ESSDERC 2006)", 2006, p. 185
ESSDERC 2006, Montreux

Abstract:
Abstract— A very efficient method to reduce gate induced drain leakage (GIDL) as the dominant leakage path in the tail part of DRAM data retention time distribution is presented. Different to other reports, GIDL is addressed by trap passivation instead of lowering of electric fields. Stable passivation of traps is achieved by implantation of fluorine into S/D regions of 512Mbit and 1Gbit DRAMs in 110 nm technology. It was found that the position of the F-implant within the process flow plays a key role to enable trap reduction and retention tail improvement. Systematic implant experiments were carried out resulting in a failcount reduction of up to 40 %. Detailed activation energy analysis on individual memory cells confirms the validity of the retention tail model and the selective reduction of GIDL traps by fluorine implantation.

BibTeX:
@inproceedings{Krautschneider:DRAM:2006,
author = {Weber and A and Birner and A. and Krautschneider and W.},
title = {{R}etention tail improvement for 1 {G}{B}it {D}{R}{A}{M}s through trap passivation confirmed by activation energy analysis},
year = {2006},
month = {09},
booktitle = {Proc. 36th European Solid-State Device Research Conference (ESSDERC 2006)},
note = {ESSDERC 2006, Montreux},
pages = {185} }

[Abstract] [BibTeX]
Paola Vega-Castillo

Potentials and constraints of single-poly non-volatile memories

Dissertation an der TU Hamburg-Harburg, Dissertation (Shaker Verlag Aachen), 2006

Abstract:

BibTeX:
@phdthesis{Vega-Diss-2006,
author = {Paola Vega-Castillo},
title = {{P}otentials and constraints of single-poly non-volatile memories},
year = {2006},
month = {08},
address = {Shaker Verlag Aachen},
school = {TU Hamburg-Harburg},
type = {Dissertation} }

[BibTeX]
Carsten Bronskowski

Programmierbarer Operationsverstärker zur Erfassung von bioelektrischen Signalen mit unterschiedlichen Rausch- und Verlustleistungs-Anforderungen

Dissertation an der TU Hamburg-Harburg (Shaker Verlag Aachen), 2006

Abstract:
In der vorliegenden Arbeit wird ein einstellbares Analoges Front End (AFE) vorgestellt, welches in einem integrierten Schaltkreis (ASIC) vorliegt. Das Analoge Front End erlaubt die Anpassung des ASICs an die jeweilige Spezifikation von EKG-, EEG-, EP- und EMG-Messgeräten und findet darüber hinaus in mobilen Messgerät-Einheiten Anwendung. Es besteht aus einem Vorverstärker, einem Nachverstärker, einem Tiefpass und einem Symmetrierverstärker. Hierbei sind die Spezifikations-Parameter Rauschen, Leistungsaufnahme, Verstärkung und Grenzfrequenz veränderbar. Die Realisierung der Einstellbarkeit des Analogen Front Ends hinsichtlich des Rauschens und der Leistungsaufnahme wird erst möglich durch die Verwendung von einstellbaren Operationsverstärkern, welche sich im Vorverstärker und im Nachverstärker des AFEs befinden. Hierzu wird in der vorliegenden Arbeit ein Konzept zum systematischen Entwurf eines einstellbaren Operationsverstärkers anhand von frei wählbaren Schaltungsparametern vorgestellt. Es konnte so ein Operationsverstärker realisiert werden, der über einen Steuerstrom variabel einstellbar bezüglich seines Rauschens und seiner Leistungsaufnahme ist.

BibTeX:
@phdthesis{Bronsko:Diss:2006,
author = {Carsten Bronskowski},
title = {{P}rogrammierbarer {O}perationsverst{\"a}rker zur {E}rfassung von bioelektrischen {S}ignalen mit unterschiedlichen {R}ausch- und {V}erlustleistungs-{A}nforderungen},
year = {2006},
month = {07},
address = {Shaker Verlag Aachen},
school = {TU Hamburg-Harburg} }

[Abstract] [BibTeX]
Weber, A and Birner, A. and Krautschneider, W.

Method of activation energy analysis and application to individual cells of 256 Mb DRAM in 110 nm technology

Artikel in "Solid-State-Electronics", p. 613, 2006

Abstract:
In DRAM every memory cell experiences an individual mixture of leakage currents which consume part of the stored charge and lead to a wide distribution of data retention time (tRet). This distribution consists of an intrinsic (main) and an extrinsic (tail) branch. The formalism of activation energies (Ea) provides information about the mechanisms involved. Activation energies of single cells in a 256M DDR memory chip and their dependence on negative gate bias (VNWLL) as well as body bias (VBB) have been investigated intensively for the first time. The worst tail cells – all within a small retention time interval – show a twofold and wide distribution of activation energies. The lower Ea distribution can be altered with VNWLL, whereas the higher Ea distribution only alters with VBB. Going from tail towards main distribution, the percentage of cells belonging to the low Ea part continuously decreases and finally disappears. We therefore conclude that a gate induced mechanism (GIDL) is the main component responsible for DRAM retention tail.

BibTeX:
@article{Krautschneider:256Mb:2006,
author = {Weber and A and Birner and A. and Krautschneider and W.},
title = {{M}ethod of activation energy analysis and application to individual cells of 256 {M}b {D}{R}{A}{M} in 110 nm technology},
year = {2006},
month = {04},
journal = {Solid-State-Electronics},
pages = {613} }

[Abstract] [BibTeX]
Vega-Castillo, P. and Krautschneider, W.H.

Low Voltage, Low Power, Self-Clocked Single Poly CMOS Compatible OTP Memory System

In Tagungsband "Proc. XII Workshop Iberchip", 2006
Workshop Iberchip

Abstract:
1 ABSTRACT: A single poly non-volatile memory system for low voltage, low power analog calibration applications is presented, which performs the read, program and verify operations for a single-poly non-volatile memory. The reading circuitry performs single-ended sensing, thus no dummy cells are required. Furthermore, the system addresses the cells sequentially and automatically, is self-clocked and the operation frequency is adjustable. The system was fabricated using 0.35μm technology (nominal voltage of 3.3V). It operates down to 0.95V with a power consumption of 600nW during the reading operation. The timing unit operates down to 0.55V.

BibTeX:
@inproceedings{Vega-Castillo:Memory:2006,
author = {Vega-Castillo and P. and Krautschneider and W.H.},
title = {{L}ow {V}oltage, {L}ow {P}ower, {S}elf-{C}locked {S}ingle {P}oly {C}{M}{O}{S} {C}ompatible {O}{T}{P} {M}emory {S}ystem},
year = {2006},
month = {03},
booktitle = {Proc. XII Workshop Iberchip},
note = {Workshop Iberchip} }

[Abstract] [BibTeX]
Pereira-Arroyo, R. and Alvarado-Moya, P. and Krautschneider, W.H.

Multi-objective optimization of MCML circuits using a genetic algorithm

In Tagungsband "Proc. XII. Workshop Iberchip", 2006, p. 134
San Jose, Costa Rica

Abstract:
This paper introduces the Pareto front as a useful analysis tool to explore the design space of MOS Current Mode Logic (MCML) circuits. A genetic algorithm (GA) is employed to automatically detect this front in a process that efficiently finds optimal parameterizations and their corresponding values in an aggregate fitness space. As an example of the flexibility of this design automation approach, the results for an optimized fundamental inverter logic gate are presented. Measures of the power consumption, propagation delay and output voltage swing are used as fitness functions, since the problem is treated as a multi-objective optimization task.

BibTeX:
@inproceedings{Krautschneider:MCML:2006,
author = {Pereira-Arroyo and R. and Alvarado-Moya and P. and Krautschneider and W.H.},
title = {{M}ulti-objective optimization of {M}{C}{M}{L} circuits using a genetic algorithm},
year = {2006},
month = {03},
booktitle = {Proc. XII. Workshop Iberchip},
note = {San Jose, Costa Rica},
pages = {134} }

[Abstract] [BibTeX]
Vega-Castillo, P. and Krautschneider, W.H.

Optimization and constraints of single-poly non-volatile memory cells for embedded applications

In Tagungsband "Proc. XII. Workshop Iberchip", 2006, p. 120
San Jose, Costa Rica

Abstract:
The influence of the cell geometry in the programming and erasing characteristics of a fully CMOS compatible singlepoly non-volatile memory cell for low cost embedded applications was investigated using cells fabricated in a standard CMOS 0.35μm-technology with transistor sizes varying form 10μm/0.3μm to 0.7μm/0.3μm, being the 0.7μm-wide cells the smallest single poly non-volatile memory cells reported until now. In addition to this, the impact of transistor separation is presented and discussed, together with the impact of the cell dimensions in the characteristics and endurance of the cells.

BibTeX:
@inproceedings{Vega:single-poly:2006,
author = {Vega-Castillo and P. and Krautschneider and W.H.},
title = {{O}ptimization and constraints of single-poly non-volatile memory cells for embedded applications},
year = {2006},
month = {03},
booktitle = {Proc. XII. Workshop Iberchip},
note = {San Jose, Costa Rica},
pages = {120} }

[Abstract] [BibTeX]
Alexander Mora-Sanchez, Dietmar Schroeder, Wolfgang H. Krautschneider

Preliminaries on low-power analog-to-digital conversion for system-on-chip design: sigma-delta modulator with a single amplifier and a novel 14-transistor 1-bit full adder

In Tagungsband "XII Iberchip Workshop IWS-2006", 2006
Konferenz San Jose (Costa Rica), 22-24 März 2006

Abstract:
Two approaches for low-power analog-to-digital (A/D) conversion for biomedical-oriented System-on-Chip (SoC) design are addressed in this paper. The first approach introduces the use of a single amplifier to realize switchedcapacitor- based 1-bit low-pass A/D sigma-delta modulators, thus reducing the power consumption of the modulator compared to the traditional counterpart (approx. 50% and 25% in 2nd- and 3rd-order modulation, respectively). Here, the single amplifier is time-shared to perform sampling and integration operations concurrently. The second approach introduces a novel small-area low-power 1-bit CMOS-based full adder cell to be used in the digital signal processing part of the SoC, which includes the digital filters of the sigma-delta A/D converters. The novel full adder comprises only 14 transistors. Compared to the standard 28-transistor full adder found in the standard library cell of the 0.35 μm 3.30 V CMOS technology used in this work, it consumes 45% less power and occupies 47% less area.

BibTeX:
@inproceedings{Mora:lowpowerADC:2006,
author = {Alexander Mora-Sanchez and Dietmar Schroeder and Wolfgang H. Krautschneider},
title = {{P}reliminaries on low-power analog-to-digital conversion for system-on-chip design: sigma-delta modulator with a single amplifier and a novel 14-transistor 1-bit full adder},
year = {2006},
month = {03},
booktitle = {XII Iberchip Workshop IWS-2006},
note = {Konferenz San Jose (Costa Rica), 22-24 M{\"a}rz 2006} }

[Abstract] [BibTeX]
Kristian Hafkemeyer, Alexander Mora-Sanchez, Dietmar Schroeder

Low-Power Processing of ECG-Signals Using Predictive A/D-Conversion

In Tagungsband "XII Workshop Iberchip", 2006, p. 162-165
Konferenz San Jose (Costa Rica), 22-24 März 2006

Abstract:
A predictive A/D-converter for the acquisition and digitisation of electrocardiographic (ECG) signals is presented. The proposed converter is intended to be utilised in lowpower ECG applications and has several advantages contrary to an conventional ECG channel or former predictive signal processing concepts. The system works as an closed loop encoder, runs at decreased power consumption and is fully integratable on chip. The theoretical approach is deduced here in detail and the results are proven with simulations and measurements on prototyped circuits.

BibTeX:
@inproceedings{PRED06,
author = {Kristian Hafkemeyer and Alexander Mora-Sanchez and Dietmar Schroeder},
title = {{L}ow-{P}ower {P}rocessing of {E}{C}{G}-{S}ignals {U}sing {P}redictive {A}/{D}-{C}onversion},
year = {2006},
month = {03},
booktitle = {XII Workshop Iberchip},
note = {Konferenz San Jose (Costa Rica), 22-24 M{\"a}rz 2006},
pages = {162-165} }

[Abstract] [BibTeX]
R. Meixner, R. Wille, P. Schertling, H. Goebel, H. Harde, K.-H. Steglich, F.A. Yildirim, W. Bauhofer, W. Krautschneider

Bottom gate organic field effect transistors made by laser structuring

Artikel in "Elsevier Organic Electronic", vol. 7, p. 586-591, 2006

Abstract:
This paper presents a process to manufacture all-polymer field effect transistors in a bottom gate configuration where all electrodes - including the gate electrode - are patterned using an excimer laser in combination with a scanning unit. This technique yields channel length of 10 µm between the source and the drain electrodes. Being a combination of a scanning and a single shot patterning process it is a promising candidate for an industrial process with a resolution of 10 µm and an operational throughput of at least 6 cm²/s.

BibTeX:
@article{meixner:yildrin:2006,
author = {R. Meixner and R. Wille and P. Schertling and H. Goebel and H. Harde and K.-H. Steglich and F.A. Yildirim and W. Bauhofer and W. Krautschneider},
title = {{B}ottom gate organic field effect transistors made by laser structuring},
year = {2006},
journal = {Elsevier Organic Electronic},
pages = {586-591},
volume = {7} }

[Abstract] [BibTeX]
Faruk Altan Yildirim, Ronald Meixner, Robert Roman Schliewe, Wolfgang Bauhofer, Holger Goebel, Wolfgang Krautschneider

Polymer Gate Dielectrics for High Performance Organic Field-Effect Transistors

Artikel in "Mater.Res.Soc.Symp.Proc.", vol. 937, 2006

Abstract:
Solution-processed bottom-gate organic field-effect transistors (OFETs) with different polymeric dielectric materials were produced and characterized. As the active semiconductor layer, regioregular poly(3-hexylthiophene) (rr-P3HT) was used. Dielectric materials of high chemical stability with simple processing conditions were used as gate-insulation in OFETs. Also, the dielectric properties of the polymeric layers were investigated in metal-insulator-metal capacitor structures, where the thicknesses of the films were exactly the same as they were in the OFETs. The specific volume resistivity and dielectric constant values determined were then used to explain the electrical behavior of OFETs. The devices having BCB, SU-8 and NOA74 as dielectric layers exhibited the desired transistor characteristics, whereas the transistors with Avatrel dielectric did not, due to higher gate-leakages. As a result, SU-8 and NOA74 resins were proven to be good candidates for gate-dielectric usage in solution-processed all-polymer OFETs.

BibTeX:
@article{Krautschneider:Gate:2006,
author = {Faruk Altan Yildirim and Ronald Meixner and Robert Roman Schliewe and Wolfgang Bauhofer and Holger Goebel and Wolfgang Krautschneider},
title = {{P}olymer {G}ate {D}ielectrics for {H}igh {P}erformance {O}rganic {F}ield-{E}ffect {T}ransistors},
year = {2006},
journal = {Mater.Res.Soc.Symp.Proc.},
volume = {937} }

[Abstract] [BibTeX]
R.R. Schliewe, F.A. Yildirim, W. von Emden, R. Witte, W. Bauhofer, W. Krautschneider

Static model for organic field-effect transistors including both gate-voltage-dependent mobility and depletion effect

Artikel in "Applied Physics Letters", vol. 88, p. 233514-1-3, 2006

Abstract:
Physics-based models of organic field-effect transistors OFETs which can be used for computer-aided simulation of organic integrated circuits were investigated. For this purpose hybrid OFETs with poly3-hexylthiophene-2,5-diyl as the semiconductor were fabricated and characterized. The differential drain-source resistance reveals the need for a unified consideration of a gate-voltage-dependent mobility and of the depletion effect. We avoid neglecting the capacitance of the insulator and the semiconductor which would have otherwise introduced restrictions. The analytic modeling yields a compact static equivalent circuit diagram.

BibTeX:
@article{Krautschneider:model:2006,
author = {R.R. Schliewe and F.A. Yildirim and W. von Emden and R. Witte and W. Bauhofer and W. Krautschneider},
title = {{S}tatic model for organic field-effect transistors including both gate-voltage-dependent mobility and depletion effect},
year = {2006},
journal = {Applied Physics Letters},
pages = {233514-1-3},
volume = {88} }

[Abstract] [BibTeX]
R.M. Meixner, H. Göbel, F.A. Yildirim, W. Bauhofer, W. Krautschneider

Wavelength-selective organic field-effect phototransistors based on dye-doped poly-3-hexylthiophene

Artikel in "Applied Physics Letters", vol. 89, p. 092110-1-3, 2006

Abstract:
The authors present a strategy to manufacture wavelength-selective field-effect phototransistors by employing dye-doped poly-3-hexylthiophene P3HT as a semiconducting layer. The dye doping of the semiconductor P3HT was achieved by blending organic molecules—coumarin 6, oxazine 1, and nile red—into the conjugated organic polymer. Illuminating these transistors with monochromatic light in the range of 400–700 nm resulted in varying conductivities for certain wavelengths in dependence on the particular dye. This effect is attributed to the photogeneration of excitons on the dye molecules, which are subsequently transferred to the conjugated polymer.

BibTeX:
@article{Krautschneider:poly3:2006,
author = {R.M. Meixner and H. G{\"o}bel and F.A. Yildirim and W. Bauhofer and W. Krautschneider},
title = {{W}avelength-selective organic field-effect phototransistors based on dye-doped poly-3-hexylthiophene},
year = {2006},
journal = {Applied Physics Letters},
pages = {092110-1-3},
volume = {89} }

[Abstract] [BibTeX]

top

2005

Alexander Mora-Sanchez, Wolfgang H. Krautschneider

A Low-Power Small-Area 1-bit Full Adder Cell in a 0.35μm CMOS Technology for Biomedical-Oriented System-on-Chip Applications

In Tagungsband "ProRisc2005 Workshop, Veldhoven (The Netherlands), 17.-18. November 2005", 2005, p. 554-558
Veldhoven (The Netherlands)

Abstract:
In this paper a low-power small-area 1-bit CMOSbased adder cell is being introduced. It needs only 14 transistors and relies on low-power XOR/XNOR cells, transmission function logic and pass-gate logic cells to compute the sum and carry-out bits with rail-to-rail output swing. The proposed adder cell, which has been designed and laid out according to the layout requirements of a 0.35 μm 3.30 V CMOS technology, consumes 45% less power and occupies 47% less area than the 28-transistor standard cell provided by the technology supplier, making it attractive for being used in low-power applications, such as in a biomedical-oriented system-on-chip design.

BibTeX:
@inproceedings{Mora:fulladder:2005,
author = {Alexander Mora-Sanchez and Wolfgang H. Krautschneider},
title = {{A} {L}ow-{P}ower {S}mall-{A}rea 1-bit {F}ull {A}dder {C}ell in a 0.35{&}#956;m {C}{M}{O}{S} {T}echnology for {B}iomedical-{O}riented {S}ystem-on-{C}hip {A}pplications},
year = {2005},
month = {11},
booktitle = {ProRisc2005 Workshop, Veldhoven (The Netherlands), 17.-18. November 2005},
note = {Veldhoven (The Netherlands)},
pages = {554-558} }

[Abstract] [BibTeX]
Roberto Pereira-Arroyo, Pablo Alvarado-Moya, Wolfgang H. Krautschneider

Application of multi-objective optimization with a genetic algorithm for the optimization of CML Circuits

In Tagungsband "ProRisc2005 Workshop, Veldhoven (The Netherlands), 17.-18. November 2005", 2005, p. 263-267
ProRisc2005 Workshop, Veldhoven (The Netherlands), 17.-18. November 2005

Abstract:
This paper introduces the Pareto front as a useful analysis tool to explore the design space of MOS Current Mode Logic (MCML) circuits. A genetic algorithm (GA) is employed to automatically detect this front in a process that efficiently finds optimal parameterizations and their corresponding values in an aggregate fitness space. As an example of the flexibility of this design automation approach, the results for an optimized fundamental inverter logic gate are presented. Measures of the power consumption, propagation delay and output voltage swing are used as fitness functions, since the problem is treated as a multi-objective optimization task.

BibTeX:
@inproceedings{OPT05,
author = {Roberto Pereira-Arroyo and Pablo Alvarado-Moya and Wolfgang H. Krautschneider},
title = {{A}pplication of multi-objective optimization with a genetic algorithm for the optimization of {C}{M}{L} {C}ircuits},
year = {2005},
month = {11},
booktitle = {ProRisc2005 Workshop, Veldhoven (The Netherlands), 17.-18. November 2005},
note = {ProRisc2005 Workshop, Veldhoven (The Netherlands), 17.-18. November 2005},
pages = {263-267} }

[Abstract] [BibTeX]
P. Vega-Castillo, W.H. Krautschneider

Low voltage, low power, self-clocked memory read/program-verify circuitry with adjustable operating frequency

In Tagungsband "ProRisc2005 Workshop, Veldhoven (The Netherlands), 17.-18. November 2005", 2005, p. 303-306
Veldhoven, The Netherlands

Abstract:
A memory reading and program-verify circuitry for low voltage, low power applications is presented, which performs the read, program and verify operations for a single-poly nonvolatile memory. The reading circuitry performs single-ended sensing, thus no dummy cells are required. The circuit was fabricated using 0.35μm technology with a nominal supply voltage of 3.3V. Power consumption during reading was measured to be 4.7μW with a supply voltage of 0.75V at an operating frequency of 714 Hz.

BibTeX:
@inproceedings{Vega-ProRisc-05,
author = {P. Vega-Castillo and W.H. Krautschneider},
title = {{L}ow voltage, low power, self-clocked memory read/program-verify circuitry with adjustable operating frequency},
year = {2005},
month = {11},
booktitle = {ProRisc2005 Workshop, Veldhoven (The Netherlands), 17.-18. November 2005},
note = {Veldhoven, The Netherlands},
pages = {303-306} }

[Abstract] [BibTeX]
Carsten Bronskowski, Philipp Meier auf der Heide, Dietmar Schroeder

Optimisation of Programmable Operational Amplifiers

In Tagungsband "ProRISC2005 Workshop, Veldhoven (The Netherlands), 17.-18. November 2005", 2005, p. 196-200
ProRISC2005 Workshop, Veldhoven (The Netherlands), 17.-18. November 2005

Abstract:
An optimisation of a programmable Operational Amplifier is presented. The OpAmp is programmable concerning noise and power consumption while keeping the stability for the whole range of programmability. Simulation results for a 0.35 um CMOS OpAmp show either low noise of 3.2 nV/sqrt(Hz) or low power consumption of 84 uW having a phase margin variation of only Delta_Phi_res = 3°.

BibTeX:
@inproceedings{Optimisation_OP,
author = {Carsten Bronskowski and Philipp Meier auf der Heide and Dietmar Schroeder},
title = {{O}ptimisation of {P}rogrammable {O}perational {A}mplifiers},
year = {2005},
month = {11},
booktitle = {ProRISC2005 Workshop, Veldhoven (The Netherlands), 17.-18. November 2005},
note = {ProRISC2005 Workshop, Veldhoven (The Netherlands), 17.-18. November 2005},
pages = {196-200} }

[Abstract] [BibTeX]
Kristian Hafkemeyer, Alexander Mora-Sanchez, Dietmar Schroeder

Predictive analogue-to-digital converter for low-power electrocardiographic applications

In Tagungsband "ProRISC2005 Workshop, Veldhoven (The Netherlands), 17.-18. November 2005", 2005, p. 205-208
ProRisc Veldhoven 17.-18. November 2005

Abstract:
Abstract—A predictive A/D-converter for the acquisition and digitisation of electrocardiographic (ECG) signals is presented. The proposed converter is intended to be utilised in low-power ECG applications.

BibTeX:
@inproceedings{PRED05,
author = {Kristian Hafkemeyer and Alexander Mora-Sanchez and Dietmar Schroeder},
title = {{P}redictive analogue-to-digital converter for low-power electrocardiographic applications},
year = {2005},
month = {11},
booktitle = {ProRISC2005 Workshop, Veldhoven (The Netherlands), 17.-18. November 2005},
note = {ProRisc Veldhoven 17.-18. November 2005},
pages = {205-208} }

[Abstract] [BibTeX]
Alexander Mora-Sanchez, Dietmar Schroeder, Wolfgang H. Krautschneider

Sigma-Delta Modulators of 2nd- and 3rd-Order with a Single Operational Transconductance Amplifier for Low-Power Analogue-to-Digital Conversion

In Tagungsband "ProRisc2005 Workshop, Veldhoven (The Netherlands), 17.-18. November 2005", 2005, p. 259-262
ProRisc Veldhoven (The Netherlands) 17.-18. November 2005

Abstract:
The use of a single amplifier to realise switchedcapacitor (SC) based 1-bit low-pass sigma-delta modulators is presented. Sampling and integration operations are executed concurrently whereas the single amplifier is time-shared. It is shown that this method offers less power consumption than the traditional counterpart for modulation orders less than 4.

BibTeX:
@inproceedings{Mora:SDmod:2005,
author = {Alexander Mora-Sanchez and Dietmar Schroeder and Wolfgang H. Krautschneider},
title = {{S}igma-{D}elta {M}odulators of 2nd- and 3rd-{O}rder with a {S}ingle {O}perational {T}ransconductance {A}mplifier for {L}ow-{P}ower {A}nalogue-to-{D}igital {C}onversion},
year = {2005},
month = {11},
booktitle = {ProRisc2005 Workshop, Veldhoven (The Netherlands), 17.-18. November 2005},
note = {ProRisc Veldhoven (The Netherlands) 17.-18. November 2005},
pages = {259-262} }

[Abstract] [BibTeX]
Jakob M. Tomasik, Carsten Bronskowski, Wolfgang H. Krautschneider

A Model for Switched Biasing MOSFET 1/f Noise Reduction

In Tagungsband "SAFE2005 Workshop, Veldhoven (The Netherlands), 17.-18. November 2005", 2005, p. 60-63
SAFE2005, Veldhofen

Abstract:
In this paper, we present a MOSFET 1/f noise model for circuit simulation that incorporates the effect of switched biasing. In contrast to existing models like the 1/f noise Spice model, the simulation is time transient, allowing to predict the reduction of 1/f noise due to switched biasing. In addition, we investigate the benefit of switching a low-noise CMOS op-amp and could achieve a 1/f noise reduction of 40%. This approach differs from conventional techniques like chopping, as the 1/f noise is reduced on the device level.

BibTeX:
@inproceedings{1/f05,
author = {Jakob M. Tomasik and Carsten Bronskowski and Wolfgang H. Krautschneider},
title = {{A} {M}odel for {S}witched {B}iasing {M}{O}{S}{F}{E}{T} 1/f {N}oise {R}eduction},
year = {2005},
month = {11},
booktitle = {SAFE2005 Workshop, Veldhoven (The Netherlands), 17.-18. November 2005},
note = {SAFE2005, Veldhofen},
pages = {60-63} }

[Abstract] [BibTeX]
Carsten Bronskowski, Dietmar Schroeder

Design of Programmable Operational Amplifiers

In Tagungsband "IEEJ International Analog VLSI Workshop", Verlag IXL Laboratory Bordeaux, France, 2005
Bordeaux, 19th-21th October, 2005

Abstract:
A methodology for the systematic design of a programmable operational amplifier (OpAmp) is described. The OpAmp is programmable concerning noise and power consumption while keeping the stability for the whole operation range. Experimental results for a 0.35 um CMOS OpAmp show either ultra low noise of 2 nV/sqrt(Hz) or low power consumption of 140 uW.

BibTeX:
@inproceedings{Bronskowski:OPDesign:2005,
author = {Carsten Bronskowski and Dietmar Schroeder},
title = {{D}esign of {P}rogrammable {O}perational {A}mplifiers},
year = {2005},
month = {10},
booktitle = {IEEJ International Analog VLSI Workshop},
note = {Bordeaux, 19th-21th October, 2005},
publisher = {IXL Laboratory Bordeaux, France} }

[Abstract] [BibTeX]
A. Weber, A. Birner, W. Krautschneider

Data Retention Analysis in Individual Cells

In Tagungsband "ESSDERC", 2005
Grenoble

Abstract:
In DRAM every memory cell experiences an individual mixture of leakage currents which consume part of the stored charge and lead to a wide distribution of data retention time (tRet). This distribution consists of an intrinsic (main) and an extrinsic (tail) branch. The formalism of activation energies (Ea) provides information about the mechanisms involved. Activation energies of single cells in a 256M DDR memory chip and their dependence on negative gate bias (VNWLL) as well as body bias (VBB) have been investigated intensively for the first time. The worst tail cells – all within a small retention time interval – show a twofold and wide distribution of activation energies. The lower Ea distribution can be altered with VNWLL, whereas the higher Ea distribution only alters with VBB. Going from tail towards main distribution, the percentage of cells belonging to the low Ea part continuously decreases and finally disappears. We therefore conclude that a gate induced mechanism (GIDL) is the main component responsible for DRAM retention tail.

BibTeX:
@inproceedings{Weber05,
author = {A. Weber and A. Birner and W. Krautschneider},
title = {{D}ata {R}etention {A}nalysis in {I}ndividual {C}ells},
year = {2005},
month = {09},
booktitle = {ESSDERC},
note = {Grenoble} }

[Abstract] [BibTeX]
Dietmar Schroeder

Adaptive low-power analog/digital converters for wireless sensor networks

In Tagungsband "3rd Int. Workshop on Intelligent Solutions in Embedded Systems (WISES'05)", 2005, p. 70--78
Hamburg, 20 May 2005

Abstract:
The paper addresses the problem of power consumption of sensor nodes in a wireless network. An integrated low-power analog/digital converter (ADC) is presented that is particularly suited for wireless sensor applications. The converter makes use of information theoretic redundancy in the input signal for reducing the conversion workload and performing data compression on-the-fly during conversion (entropy-coding A/D converter). Thus, energy is saved both in signal conversion and transmission. Experimental results from a prototype chip are presented. The converter is especially suitable for sensor networks that maintain a global data model. This is further illustrated on an exemplary scenario of distributed wave detection. It is shown that sensor signal detection and acquisition in this type of applications can be carried out very efficiently with entropy-coding con-verters used in the sensor nodes.

BibTeX:
@inproceedings{Schroeder:WISES:2005,
author = {Dietmar Schroeder},
title = {{A}daptive low-power analog/digital converters for wireless sensor networks},
year = {2005},
month = {05},
booktitle = {3rd Int. Workshop on Intelligent Solutions in Embedded Systems (WISES'05)},
note = {Hamburg, 20 May 2005},
pages = {70--78} }

[Abstract] [BibTeX]
P. Vega-Castillo, W.H. Krautschneider

Single Poly PMOS-based CMOS-compatible low voltage OTP

In Tagungsband "SPIE Conference "Microtechnologies for the new millenium"", 2005, p. p. 953-960
Sevilla, Spain, 9-11 May 2005

Abstract:
A PMOS-based non-volatile memory cell fully compatible with standard CMOS fabrication processes is presented. It consists of a PMOS access transistor in series with a PMOS transistor whose gate is left floating. The cell configuration eliminates the requirement of a control gate, and therefore can be fabricated without using double poly gates. The cell saves area compared to other single poly non-volatile memory cells based on CMOS approaches, which require both NMOS and PMOS transistors. It also avoids the risk of latch-up. The cells were fabricated using a 350nm standard CMOS process. The programming mechanism of the cell is hot electron injection. The programming operation can be performed at programming voltages as low as |Vds|=4.5V. The cell can be used as a low voltage OTP and provides a very cheap alternative to integrate OTPs in CMOS ICs without any modification of the fabrication process.

BibTeX:
@inproceedings{PaolaSPIE05,
author = {P. Vega-Castillo and W.H. Krautschneider},
title = {{S}ingle {P}oly {P}{M}{O}{S}-based {C}{M}{O}{S}-compatible low voltage {O}{T}{P}},
year = {2005},
month = {05},
booktitle = {SPIE Conference "Microtechnologies for the new millenium"},
note = {Sevilla, Spain, 9-11 May 2005},
pages = {p. 953-960} }

[Abstract] [BibTeX]
Carsten Bronskowski, Dietmar Schröder

Systematischer Entwurf von einstellbaren Operationsverstärkern

In Tagungsband "ANALOG 2005", Verlag VDE Verlag, 2005, vol. 46, Serie "GMM Fachbericht", p. 115--120
8. GMM/ITG-Diskussionssitzung, Hannover, 16.-18. März 2005

Abstract:
Im vorliegenden Beitrag wird ein Konzept zum systematischen Entwurf eines einstellbaren Operationsverstärkers anhand von frei wählbaren Schaltungsparametern vorgestellt. Hierdurch wird eine über einen Steuerstrom variable Einstellung des OPs bezüglich seines Rauschens und seiner Stromaufnahme mit konstant bleibender Phasenreserve erreicht. Unter Zuhilfenahme der Übertragungsfunktion des Operationsverstärkers wird ein theoretischer Ansatz zur Bestimmung der Freiheitsgrade entwickelt, welcher eine Phasenreserve von 70° für den gesamten Einstellbereich garantiert. Anhand einer Realisierung in einer 0,35 um CMOS Technologie wird die Einstellbarkeit des verwendeten OPs nachgewiesen.

BibTeX:
@inproceedings{Bronskowski:Entwurf:2005,
author = {Carsten Bronskowski and Dietmar Schr{\"o}der},
title = {{S}ystematischer {E}ntwurf von einstellbaren {O}perationsverst{\"a}rkern},
year = {2005},
month = {03},
booktitle = {ANALOG 2005},
note = {8. GMM/ITG-Diskussionssitzung, Hannover, 16.-18. M{\"a}rz 2005},
pages = {115--120},
publisher = {VDE Verlag},
series = {GMM Fachbericht},
volume = {46} }

[Abstract] [BibTeX]
Alexander Mora-Sanchez, Dietmar Schroeder

Low-power decimation filter in a 0.35um technology for a multi-channel biomedical data acquisition chip

In Tagungsband "Proceedings of the XI IBERCHIP Workshop", 2005, p. 199-202
Salvador da Bahia, Brasilien, 28-30 March 2005

Abstract:
The implementation of a low-power decimation filter for a multi-channel biomedical data acquisition chip, intended to be battery powered, is reported. The proposed filter has been designed using a 0.35 μm CMOS technology. It is based on the polyphase decomposition of a 3rd-order comb filter with decimation factor of 256 and will replace the IIR-FIR comb filter structure that has been used so far. A simple model for the estimation of power dissipation predicts a power consumption of the proposed filter of about 70%-80% less than that of the IIR-FIR comb filter. Actual measurements on a test chip registered a power consumption of 127 μW at 10 MHz clock frequency, which is in agreement with the predicted values. This paper also reports a variation of the proposed filter that processes 4 signals (multi-signal approach) by sharing computational resources while keeping the low-power feature, thus, saving about 30% of gate area compared to using 4 replicas of a single-signal filter.

BibTeX:
@inproceedings{Mora:Decimator-LP:2005,
author = {Alexander Mora-Sanchez and Dietmar Schroeder},
title = {{L}ow-power decimation filter in a 0.35um technology for a multi-channel biomedical data acquisition chip},
year = {2005},
month = {03},
booktitle = {Proceedings of the XI IBERCHIP Workshop},
note = {Salvador da Bahia, Brasilien, 28-30 March 2005},
pages = {199-202} }

[Abstract] [BibTeX]
A. Avellan, E. Miranda, D. Schroeder, W. Krautschneider

Model for the voltage and temperature dependence of the soft-breakdown current in ultrathin gate oxides

Artikel in "Journal of Applied Physics", vol. 97, p. 14104, 2005

Abstract:
The voltage and temperature dependence of the soft breakdown conduction mechanism in metal-oxide-semiconductor capacitors and transistors with ultrathin dielectric layers is investigated. A physical derivation of the quantum point contact model and its parameters is presented, which incorporates the smearing of the Fermi function at the electrodes as well as the effect of thermal vibrations of the constriction’s bottleneck. The model also takes into account the boundary conditions at the two ends of the breakdown path by considering the semiconductor band bending occurring in the nondamaged surrounding device area. Good agreement between model and experimental curves is found. Because of its analytical nature, the proposed model can be implemented in circuit simulators.

BibTeX:
@article{Avellan:SoftBreakdn:2005,
author = {A. Avellan and E. Miranda and D. Schroeder and W. Krautschneider},
title = {{M}odel for the voltage and temperature dependence of the soft-breakdown current in ultrathin gate oxides},
year = {2005},
month = {01},
journal = {Journal of Applied Physics},
pages = {14104},
volume = {97} }

[Abstract] [BibTeX]
R. Meixner and F.A. Yilidrim and R.R. Schliewe and H. Goebel and W. Bauhofer and W. Krautschneider

Low-Temperature Process for manufacturing All Polymer Thin-Film Transistors

In Tagungsband "IEEE Polytronic 2005 Conference", 2005, Herausgeber IEEE
IEEE Polytrronic 2005

Abstract:
We report a low-temperature process to manufacture an all polymer thin-film transistor avoiding curing and annealing temperatures higher than 80°C. This aspect of energy efficiency directly supports the low-cost feature of organic devices in fabrication.
The process is being demonstrated by using commercially available polymers such as poly(ethylenedioxythiophene)/polystyrenesulfonate dispersion representing the source, drain and gate electrode, Norland optical adhesive NOA 75 as the gate-dielectric and regioregular poly(3w-hexylthiophene-2,5-diyl) as the semiconducting polymer - all on a polyvinyl chloride substrate. Functional devices with a channel length of 25 µm and a channel width of 1 mm to 5 mm have been realized.

BibTeX:
@inproceedings{IEEE:Polymer:2005,
author = {R. Meixner and F.A. Yilidrim and R.R. Schliewe and H. Goebel and W. Bauhofer and W. Krautschneider},
title = {{L}ow-{T}emperature {P}rocess for manufacturing {A}ll {P}olymer {T}hin-{F}ilm {T}ransistors},
year = {2005},
booktitle = {IEEE Polytronic 2005 Conference},
editor = {IEEE},
note = {IEEE Polytrronic 2005} }

[Abstract] [BibTeX]

top

2004

A. Avellán and W. H. Krautschneider

Impact of Soft and Hard Breakdown on Analog and Digital Circuits

Artikel in "IEEE Transactions on Device and Materials Reliability", vol. 4, 2004

Abstract:
We characterized bias induced instabilities of organic gate insulators in MIM structures by measuring the transient current response upon application of a bias. The observed effect is believed to be caused by mobile charges, most probably ions, whose mobility is moderated by the moisture content of the dielectric. Based on this we estimated initial distribution, mobility and amount of charges.

BibTeX:
@article{Avellan:IEEE:2004,
author = {A. Avellán and W. H. Krautschneider},
title = {{I}mpact of {S}oft and {H}ard {B}reakdown on {A}nalog and {D}igital {C}ircuits},
year = {2004},
month = {11},
journal = {IEEE Transactions on Device and Materials Reliability},
volume = {4} }

[Abstract] [BibTeX]
T.S. Böscke and G.H. Gelinck and W. Krautschneider

Investigation of the stability of organic gate dielectrics by the isothermal transient current method

In Tagungsband "Proc. 7th Annual Workshop on Future Electronics SAFE", 2004
Eindhoven, The Netherlands

Abstract:
We characterized bias induced instabilities of organic gate insulators in MIM structures by measuring the transient current response upon application of a bias. The observed effect is believed to be caused by mobile charges, most probably ions, whose mobility is moderated by the moisture content of the dielectric. Based on this we estimated initial distribution, mobility and amount of charges.

BibTeX:
@inproceedings{B{\"o}scke_SAFE_04,
author = {T.S. B{\"o}scke and G.H. Gelinck and W. Krautschneider},
title = {{I}nvestigation of the stability of organic gate dielectrics by the isothermal transient current method},
year = {2004},
month = {11},
booktitle = {Proc. 7th Annual Workshop on Future Electronics SAFE},
note = {Eindhoven, The Netherlands} }

[Abstract] [BibTeX]
P. Vega-Castillo and W.H. Krautschneider

Non-volatile memory cells integrable using standard CMOS processes

In Tagungsband "Proc. 7th Annual Workshop on Future Electronics SAFE", 2004
Eindhoven, The Netherlands

Abstract:
Abstract— Two non-volatile memories compatible with CMOS processes in 0.35 μm technology are studied and compared. The PMOS version of the cell is presented and compared with its NMOS counterpart. Hot hole injection is studied as an altenative to Fowler Nordheim tunneling to decrease the operating voltages. Measurement results are presented and discussed.

BibTeX:
@inproceedings{Vega-Castillo:SAFE:2004,
author = {P. Vega-Castillo and W.H. Krautschneider},
title = {{N}on-volatile memory cells integrable using standard {C}{M}{O}{S} processes},
year = {2004},
month = {11},
booktitle = {Proc. 7th Annual Workshop on Future Electronics SAFE},
note = {Eindhoven, The Netherlands} }

[Abstract] [BibTeX]
Carsten Bronskowski, Dietmar Schroeder

A Programmable Analog Front End for the Acquisition of Biomedical Signals

In Tagungsband "ProRISC2004 Workshop", 2004, p. 474-477
ProRISC2004 Workshop, Veldhoven (The Netherlands), 25.-26. November 2004

Abstract:
A programmable biosignal acquisition Analog Front End (AFE) is presented. It is programmable concerning noise, power consumption, gain and cut-off frequency and can be adapted to all commonly used biomedical signals.

BibTeX:
@inproceedings{Bronskowski:frontend:2004,
author = {Carsten Bronskowski and Dietmar Schroeder},
title = {{A} {P}rogrammable {A}nalog {F}ront {E}nd for the {A}cquisition of {B}iomedical {S}ignals},
year = {2004},
month = {11},
booktitle = {ProRISC2004 Workshop},
note = {ProRISC2004 Workshop, Veldhoven (The Netherlands), 25.-26. November 2004},
pages = {474-477} }

[Abstract] [BibTeX]
Carsten Bronskowski, Dietmar Schroeder

A Programmable Low-Noise, Low-Power Operational Amplifier in a 0.35 um CMOS Technology

In Tagungsband "Austrochip 2004", 2004, p. 43-47, Herausgeber Ofner, Ley
12. Austrochip Tagung, Villach, 8. Oktober 2004

Abstract:
A programmable operational amplifier in a 0.35 um CMOS technology is presented. The opamp id adjustable regarding its power dissipation and its related input referred noise. By increasing the total current comsumption, the thermal input noise can be reduced to 4.4 nV/sqrt(Hz). The equivalent input rms noise in a frequency band of 100 Hz to 3 kHz yields a value of 286 nV. The smallest total supply current is reached at 108 uA producing an input thermal noise of 9.2 nV/sqrt(Hz). The opamp is suitable for all applications where a programmable trade-off between signal-to-noise ratio and power dissipation is required.

BibTeX:
@inproceedings{Bronskowski:progOP:2004,
author = {Carsten Bronskowski and Dietmar Schroeder},
title = {{A} {P}rogrammable {L}ow-{N}oise, {L}ow-{P}ower {O}perational {A}mplifier in a 0.35 um {C}{M}{O}{S} {T}echnology},
year = {2004},
month = {10},
booktitle = {Austrochip 2004},
editor = {Ofner, Ley},
note = {12. Austrochip Tagung, Villach, 8. Oktober 2004},
pages = {43-47} }

[Abstract] [BibTeX]
R. Göttsche and T. Schulz and N. Brüls and W. Krautschneider

Effective Simulation Framework for Circuit Design with Future Device Technologies

In Tagungsband "Proceedings of European Solid-State Devices Research Conference", 2004, p. 385
ESSDERC 2004

Abstract:
A simulation framework has been developed for fast and accurate calculation of MOS transistor characteristics. It is based on an optimized table model, so that it can be run solely using experimental or simulated I-V data, i.e. without any time-consuming determination of model parameters. This model is designed in a very flexible manner, thus it can be used for advanced MOS structures, such as Double-Gate and FinFET transistors, as well. By this means, it facilitates the integration of a parameterized device technology directly into a conventional design flow to qualify circuits in the design space.

BibTeX:
@inproceedings{Goettsche:2004,
author = {R. G{\"o}ttsche and T. Schulz and N. Br{\"u}ls and W. Krautschneider},
title = {{E}ffective {S}imulation {F}ramework for {C}ircuit {D}esign with {F}uture {D}evice {T}echnologies},
year = {2004},
month = {09},
booktitle = {Proceedings of European Solid-State Devices Research Conference},
note = {ESSDERC 2004},
pages = {385} }

[Abstract] [BibTeX]
F.A. Yildirim and R.R. Schliewe and W. Bauhofer and W. Krautschneider

Investigation of materials and electrode strucutres for organic field effect transistors

In Tagungsband "Technologies for Polymer Electronics, TPE04", 2004
Int. Symposium Technologies for Polymer Electronics, TPE04, Rudolstadt, 28-30 September 2004

Abstract:

BibTeX:
@inproceedings{Yildirim:Polymer:2004,
author = {F.A. Yildirim and R.R. Schliewe and W. Bauhofer and W. Krautschneider},
title = {{I}nvestigation of materials and electrode strucutres for organic field effect transistors},
year = {2004},
month = {09},
booktitle = {Technologies for Polymer Electronics, TPE04},
note = {Int. Symposium Technologies for Polymer Electronics, TPE04, Rudolstadt, 28-30 September 2004} }

[BibTeX]
D. Schroeder

Teaching the systematic analysis of electronic devices with animated presentations

In Tagungsband "5th European Workshop on Microelectronics Education (EWME 2004)", Verlag Kluwer Academic Publishers, 2004, p. 283--288, Herausgeber Ionescu et al.
Lausanne, 15.-16. April 2004

Abstract:
Demonstration of methodically solving the semiconductor device equations

BibTeX:
@inproceedings{Schroeder:TeachingDevices,
author = {D. Schroeder},
title = {{T}eaching the systematic analysis of electronic devices with animated presentations},
year = {2004},
month = {04},
booktitle = {5th European Workshop on Microelectronics Education (EWME 2004)},
editor = {Ionescu et al.},
note = {Lausanne, 15.-16. April 2004},
pages = {283--288},
publisher = {Kluwer Academic Publishers} }

[Abstract] [BibTeX]
Bernhard Fuchs

Integrierte Sensorschaltungen zur EKG- und EEG-Ableitung mit prädiktiver Signalverarbeitung

Dissertation an der TU Hamburg-Harburg (Shaker Verlag GmbH, Aachen), 2004

Abstract:
Kurzfassung: Die Aufnahme bioelektrischer Signale, wie Elektrokardiogramm (EKG), Elektroenzephalogramm (EEG) und Evozierte Potentiale (EP) sind fester Bestandteil medizinischer Diagnostik. Wesentlicher Nachteil der konventionellen Meßinstrumente sind die geringe Mobilität der Patienten und die damit verbundenen unnötig langen Krankenhausaufenthalte. Für kleinere, mobile Meßinstrumente werden anwendungsspezische, integrierte Schaltkreise (ASIC's) benötigt, durch deren Einsatz auch Entwicklungs- und Produktionsabläufe der Meßgerätehersteller schneller, zuverlässiger und kostengünstiger gemacht werden können. Das Ziel bei der Entwicklung eines ASIC ist eine möglichst große Anzahl integrierter, elektronischer Komponenten bei einem möglichst geringen Stückpreis. Weitere Anforderungen ergeben sich aus der Anwendung.

Bioelektrische Signale werden meist mit einer größeren Zahl metallischer Elektroden vom Körper abgegriffen und mittels analoger Verstärker, analoger Filter und Analog-Digital-Wandlern verarbeitet. Neben der optimalen Anzahl an Kanälen muß der ASIC ein ausreichendes Signal-Rauschverhältnis (SNR) und für mobile Anwendungen eine möglichst geringe Verlustleistung und Versorgungsspannung aufweisen. Darüberhinaus sind spezifische Probleme der Integration wie z.B. große Bauteiltoleranzen u.v.m. zu lösen.

In der vorliegenden Arbeit wird ein ASIC für bioelektrische Signale präsentiert, der im Rahmen eines EU-Projektes am AB Mikroelektronik u.a. vom Verfasser entwickelt wurde und bereits einen großen Teil der zuvor aufgezeigten Ziele erreicht. Besondere Merkmale des ASIC sind u.a. 10 Kanäle, rauscharme Vorverstärker und je ein Sima-Delta-AD-Wandler je Kanal. Der ASIC wird seit 1999 in der Serienproduktion eines Meßgeräteherstellers verwendet und wurde im Jahr 2000 zum Patent angemeldet.

Zur weiteren Verbesserung dieses ASIC wird erstmals ein neuartiges Konzept zur Ableitung von EKG-Signalen angewandt. Dabei kann jedem Kanal optional ein Prädiktor zugeschaltet werden, so daß der Kanal als geschlossene Schleife arbeitet (prädiktives Sensormodul). Durch den Prädiktor werden redundante Signalanteile und Störungen bereits am Eingang des ASIC reduziert. So kann der ASIC einen noch größeren Anteil elektrischer Komponenten ersetzen, mit reduzierter Verlustleistung und bei noch kleineren Versorgungsspannung arbeiten, ein deutlich höheres maximales SNR erreichen und eine erhöhte Robustheit gegen Bauteiltoleranzen aufweisen. Da eine besondere Schwierigkeit in der Dimensionierung des Sensormoduls besteht, wird anhand eines eigens hierfür entwickelten Modells für EKG-Signale und einer Auswahl von EKG-Testsignalen der Medizinischen Hochschule Hannover ein Verfahren zur Dimensionierung des Sensormoduls vorgestellt. Die theoretisch entwickelten Modelle wurden anhand von Messungen an einer realen Schaltung verifiziert. Das prädiktive Sensormodul bildet die Basis eines weiteren EU-Projektes, in dessen Rahmen der ASIC seit dem Jahre 2001 weiter verbessert wird.

BibTeX:
@phdthesis{Fuchs:Sensorschaltungen:2,
author = {Bernhard Fuchs},
title = {{I}ntegrierte {S}ensorschaltungen zur {E}{K}{G}- und {E}{E}{G}-{A}bleitung mit pr{\"a}diktiver {S}ignalverarbeitung},
year = {2004},
month = {01},
address = {Shaker Verlag GmbH, Aachen},
school = {TU Hamburg-Harburg} }

[Abstract] [BibTeX]
A. Avellán Hampe

Charakterisierung von MOS-Transistoren vor und nach Gateoxiddurchbruch

Dissertation an der TU Hamburg-Harburg (VDI Verlag GmbH, Düsseldorf), 2004
Fortschritt-Bericht, Reihe 9, Nr. 371

Abstract:
Untersuchungen zum Verhalten von MOS-Transistoren vor und nach Gateoxiddurchbruch werden präsentiert. Dabei werden unterschiedliche Durchbruchsarten klassifiziert und Modelle für die DC-Kennlinien sowie für das Rauschen (Random Telegraph Signals) nach Durchbruch entwickelt. Mit Hilfe der Modelle wird abschließend die Funktion ausgewählter analoger und digitaler Schaltungen analysiert. Es zeigt sich, daß je nach Anwendung und Durchbruchstyp in Schaltungen auch nach Durchbruch eines Transistors noch Zuverlässigkeitsreserven vorhanden sein können. Siehe auch http://www.vdi-nachrichten.com/onlineshops/buchshop/literaturshop/langanzeige.asp?vr_id=6723

BibTeX:
@phdthesis{Avellan:2004,
author = {A. Avellán Hampe},
title = {{C}harakterisierung von {M}{O}{S}-{T}ransistoren vor und nach {G}ateoxiddurchbruch},
year = {2004},
address = {VDI Verlag GmbH, D{\"u}sseldorf},
note = {Fortschritt-Bericht, Reihe 9, Nr. 371},
school = {TU Hamburg-Harburg} }

[Abstract] [BibTeX]
A. Avellán, E. Miranda, D. Schroeder, W. Krautschneider

Consistent model for the voltage and temperature dependence of the soft breakdown conduction mechanism in ultrathin gate oxides

Artikel in "Microelectronic Engineering", vol. 72, p. 136-139, 2004

Abstract:
The voltage and temperature dependence of the soft breakdown conduction mechanism in ultrathin gate oxides in MOS structures was investigated. Measurements performed on p- and n-type substrate samples with different oxide thickness were compared, and the results analyzed within the framework of the quantum point-contact model for dielectric breakdown. The model has been extended so as to include the thermal vibrations of the atoms that form the constriction's bottleneck. A new interpretation of the model parameters in connection with the potential drops distribution is also discussed.

BibTeX:
@article{AMS+:MEE:2004,
author = {A. Avellán and E. Miranda and D. Schroeder and W. Krautschneider},
title = {{C}onsistent model for the voltage and temperature dependence of the soft breakdown conduction mechanism in ultrathin gate oxides},
year = {2004},
journal = {Microelectronic Engineering},
pages = {136-139},
volume = {72} }

[Abstract] [BibTeX]
Stefan Schwantes

Potentials and Constraints of Future CMOS Circuits with Gigabit Feature Size

Dissertation an der Technische Universität Hamburg-Harburg (Shaker Verlag Aachen), 2004

Abstract:

BibTeX:
@phdthesis{Schwantes:CMOS-Circuits:2004,
author = {Stefan Schwantes},
title = {{P}otentials and {C}onstraints of {F}uture {C}{M}{O}{S} {C}ircuits with {G}igabit {F}eature {S}ize},
year = {2004},
address = {Shaker Verlag Aachen},
school = {Technische Universit{\"a}t Hamburg-Harburg} }

[BibTeX]

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2003

Paola Vega-Castillo

Los retos del bajo voltaje en memorias RAM

Artikel in "TeraBit", Nr. vol 2, p. pp 8-11, 2003

Abstract:
Lower power dissipation requirements lead to lower supply voltages in RAM memories. However, this degrades the sensing speed. In this article, the basics of DRAM and SRAM sensing and the issues arising from lower supply voltages are presented. Countermeasures adopted by the designers to increase the memory performance under these conditions are summarized. The basics of current sensing for high speed, low voltage SRAMs are explained and discussed.

BibTeX:
@article{Vega-Castillo:memoriasRAM,
author = {Paola Vega-Castillo},
title = {{L}os retos del bajo voltaje en memorias {R}{A}{M}},
year = {2003},
month = {12},
journal = {TeraBit},
number = {vol 2},
pages = {pp 8-11} }

[Abstract] [BibTeX]
R.R. Schliewe, F.A. Yildrim, W. Bauhofer, W. Krautschneider

Electrode structures for characterization of organic materials and for application in organic electronics

In Tagungsband "Proc. 6th Annual Workshop on Future Electronics SAFE", 2003
Eindhoven, The Netherlands

Abstract:
We focussed on lateral electrode structures for the characterization of semiconducting polymers in the FET-arrangement. As test vehicles we used polymeric field-effect transistors that can be structured by laser writing. We also worked on fabrication of vertical structures of all-polymeric electrodes. They are promising candidates for all-polymer electronics.

BibTeX:
@inproceedings{Schliewe:SAFE:03,
author = {R.R. Schliewe and F.A. Yildrim and W. Bauhofer and W. Krautschneider},
title = {{E}lectrode structures for characterization of organic materials and for application in organic electronics},
year = {2003},
month = {11},
booktitle = {Proc. 6th Annual Workshop on Future Electronics SAFE},
note = {Eindhoven, The Netherlands} }

[Abstract] [BibTeX]
P. Vega-Castillo, S. Dhar, W.H. Krautschneider

Non volatile memory cell for standard CMOS processes: A circuit-level simulation model

In Tagungsband "Proc. 6th Annual Workshop on Future Electronics SAFE, Eindhoven, The Netherlands", 2003
SAFE, Eindhoven

Abstract:
A model describing the programming operation of a single poly non-volatile memory cell was implemented in AHDL. The model, incorporated into a standard circuit-level simulator, enables fast and flexible simulation of the cell programming. Also, results from circuit-level and device-level simulations have been compared.

BibTeX:
@inproceedings{Vega-Safe-03,
author = {P. Vega-Castillo and S. Dhar and W.H. Krautschneider},
title = {{N}on volatile memory cell for standard {C}{M}{O}{S} processes: {A} circuit-level simulation model},
year = {2003},
month = {11},
booktitle = {Proc. 6th Annual Workshop on Future Electronics SAFE, Eindhoven, The Netherlands},
note = {SAFE, Eindhoven} }

[Abstract] [BibTeX]
A. Seekamp, A. Avellán, S. Schwantes, W. Krautschneider

Simple estimation of the effect of hot-carrier degradation on scaled nMOSFETs

Artikel in "International Journal of Electronics", vol. 90, Nr. 10, p. 607-12, 2003

Abstract:
The influence of parasitic charge at the Si-SiO2 interface on the characteristics of n-channel metal oxide semiconductor field effect transistors (nMOSFETs) scaled down to a feature size of 25nm is studied. Results are that the impact of parasitic charge on threshold voltage and drain current degradation significantly decreases. Additionally, as the hot-electron injection current densities are lowered for scaled-down nMOS transistors, less charge build-up occurs. This opens the perspective to make use of alternative gate dielectrics even if they have a higher interface trap density. These materials offer the advantage of greater dielectric constants than silicon oxide, so that a physically thicker dielectric will limit the gate tunneling current.

BibTeX:
@article{SAS+:IJE:2003,
author = {A. Seekamp and A. Avellán and S. Schwantes and W. Krautschneider},
title = {{S}imple estimation of the effect of hot-carrier degradation on scaled n{M}{O}{S}{F}{E}{T}s},
year = {2003},
month = {10},
journal = {International Journal of Electronics},
number = {10},
pages = {607-12},
volume = {90} }

[Abstract] [BibTeX]
R.R. Schliewe, F.A. Yildrim, W. Bauhofer, W. Krautschneider

Deposition and characterization of polymeric layers for organic electronics

In Tagungsband "Proc. Polytronic", 2003
Montreux, Switzerland

Abstract:
This paper presents a detailed characterization of different thermosetting polymers to be used as gate dielectrics in organic thin-film transistors. Selected materials yield smooth films with good insulation properties and offer attractive processing conditions. Bottom-gate transistors were prepared using these dielectrics and compared to hybrid transistors with surface-treated SiO2 as the dielectric. Gate bias induced leakage and solvent effects were investigated by preparing metal/insulator/semiconductor devices. Poly(3-hexylthiophene) (P3HT) transistors with organic dielectrics exhibited higher channel conductivity and lower mobility values with respect to P3HT-hybrid transistors and pentacene transistors. The importance of dielectric/semiconductor interface was discussed by comparing the performances of pentacene and P3HT transistors produced on different dielectrics.

BibTeX:
@inproceedings{Schliewe:Yildrim:Bauhof,
author = {R.R. Schliewe and F.A. Yildrim and W. Bauhofer and W. Krautschneider},
title = {{D}eposition and characterization of polymeric layers for organic electronics},
year = {2003},
month = {10},
booktitle = {Proc. Polytronic},
note = {Montreux, Switzerland} }

[Abstract] [BibTeX]
R. Peck, D. Schroeder

A low-power entropy-coding analog/digital converter with integrated data compression

In Tagungsband "29th European Solid-State Circuits Conference (ESSCIRC 2003)", 2003, p. 173--176, Herausgeber J. Franca, R. Koch
Estoril, Portugal, 16.-18. September 2003

Abstract:
A novel circuit architecture for integrated analog/digital converters (ADCs) is presented that allows to exploit the information-theoretic redundancy of the input signal for increasing the efficiency of operation. Analog/digital conversion and entropy-coding are combined in a single process such that integrated data compression as well as a low-power operation of the converter is obtained. A prototype ADC has been implemented in a 0.6 μm CMOS process. Experimental results showing the performance of the converter as well as the achieved compression ratios and power savings are discussed.

BibTeX:
@inproceedings{Peck:ESSCIRC:2003,
author = {R. Peck and D. Schroeder},
title = {{A} low-power entropy-coding analog/digital converter with integrated data compression},
year = {2003},
month = {09},
booktitle = {29th European Solid-State Circuits Conference (ESSCIRC 2003)},
editor = {J. Franca, R. Koch},
note = {Estoril, Portugal, 16.-18. September 2003},
pages = {173--176} }

[Abstract] [BibTeX]
R. Peck and D. Schröder

Verringerung des Linearitätsfehlers eines 12-Bit-Charge-Redistribution-A/D-Wandlers

In Tagungsband "ANALOG 2003", Verlag VDE-Verlag, 2003, vol. 177, Serie "ITG-Fachbericht", p. 191--195
7. ITG/GMM-Diskussionssitzung, Heilbronn, 10.-12. September 2003

Abstract:
In diesem Beitrag wird über die Weiterentwicklung unseres Projektes zum Entwurf eines effizienten entropiecodierenden A/D-Wandlers (ECOC) berichtet. Nachdem durch Messungen am ersten Testchip insbesondere die Verzerrungen und das Rauschen der integrierten Schaltung experimentell bestimmt und entsprechende Schlussfolgerungen hinsichtlich eines Redesigns gezogen wurden, liegen nun Ergebnisse aus einem verbesserten Entwurf vor. Es wird ausführlich diskutiert, welche Schritte zur Verringerung des Linearitätsfehlers unternommen wurden. Messungen an den realisierten Chips zeigen, dass die Maßnahmen erfolgreich waren und tatsächlich zu einer höheren Linearität des Wandlers geführt haben.

BibTeX:
@inproceedings{Peck:LinearADC:2003,
author = {R. Peck and D. Schr{\"o}der},
title = {{V}erringerung des {L}inearit{\"a}tsfehlers eines 12-{B}it-{C}harge-{R}edistribution-{A}/{D}-{W}andlers},
year = {2003},
month = {09},
booktitle = {ANALOG 2003},
note = {7. ITG/GMM-Diskussionssitzung, Heilbronn, 10.-12. September 2003},
pages = {191--195},
publisher = {VDE-Verlag},
series = {ITG-Fachbericht},
volume = {177} }

[Abstract] [BibTeX]
D. Schröder and B. Fuchs and C. Bronskowski and W. Krautschneider

Low Power Schaltkreise für die Medizinelektronik

Artikel in "TU-Spektrum", p. 4, 2003
Sommer 2003

Abstract:
Der Trend zu kleinen, leichten und mobilen Geraeten hielt auch in die Medizintechnik Einzug. Wo bisher EKG-Geraete auf Wagen gefahren und mit vielen Kabeln an den Patienten angeschlossen wurden, koennen diese nun in einer Aktentasche transportiert werden und die Signale drahtlos uebermitteln. Integrierte Schaltungen aus dem Arbeitsbereich Mikroelektronik spielen bei der Realisierung solcher Geraete eine zentrale Rolle.

BibTeX:
@article{Schr{\"o}der:TU-Spektrum:2003,
author = {D. Schr{\"o}der and B. Fuchs and C. Bronskowski and W. Krautschneider},
title = {{L}ow {P}ower {S}chaltkreise f{\"u}r die {M}edizinelektronik},
year = {2003},
month = {06},
journal = {TU-Spektrum},
note = {Sommer 2003},
pages = {4} }

[Abstract] [BibTeX]
A. Avellán, E. Miranda, D. Schroeder, W. Krautschneider

Unified model for the voltage and temperature dependence of the soft breakdown conduction mechanism in ultrathin gate oxides

In Tagungsband "13th Conference on Insulating Films on Semiconductors", 2003
Barcelona, 18-20 June 2003

Abstract:
The voltage and temperature dependence of the soft breakdown conduction mechanism in ultrathin gate oxides in MOS structures was investigated. Measurements performed on p- and n-type substrate samples with different oxide thickness were compared, and the results analyzed within the framework of the quantum point-contact model for dielectric breakdown. The model has been extended so as to include the thermal vibrations of the atoms that form the constriction's bottleneck. A new interpretation of the model parameters in connection with the potential drops distribution is also discussed.

BibTeX:
@inproceedings{AMS+:INFOS:2003,
author = {A. Avellán and E. Miranda and D. Schroeder and W. Krautschneider},
title = {{U}nified model for the voltage and temperature dependence of the soft breakdown conduction mechanism in ultrathin gate oxides},
year = {2003},
month = {06},
booktitle = {13th Conference on Insulating Films on Semiconductors},
note = {Barcelona, 18-20 June 2003} }

[Abstract] [BibTeX]
Stefan Schwantes and Ralf Göttsche and Wolfgang Krautschneider

Impact of parasitic elements on the performance of digital CMOS circuits with Gigabit feature size

Artikel in "Solid-State Electronics", vol. 47, p. 1243, 2003

Abstract:
This paper discusses the impact of the interconnect parameters on the signal delay of digital CMOS circuits. The minimum feature size for simulated MOSFETs was scaled in the range from 100 to 10 nm and interconnects were scaled down to 25 nm feature size. Our results show that new parasitic effects, as the size effect for copper and the increase of the threshold voltage due to direct tunneling gate current, will partly compensate the performance gain obtained by using new materials. These effects must be considered for minimum feature sizes below 50 nm. The influences have been studied on a logical unit and on on-chip interconnect scheme.

BibTeX:
@article{schwantes:2003,
author = {Stefan Schwantes and Ralf G{\"o}ttsche and Wolfgang Krautschneider},
title = {{I}mpact of parasitic elements on the performance of digital {C}{M}{O}{S} circuits with {G}igabit feature size},
year = {2003},
journal = {Solid-State Electronics},
pages = {1243},
volume = {47} }

[Abstract] [BibTeX]
B. Sell and A. Sänger and W. Krautschneider

Interface analysis of atomic layer deposited-TiN gate electrodes on ultrathin SiO2 layers

Artikel in "J. Vac. Sci. Technol.", vol. B21, p. 931, 2003

Abstract:
As new gate materials become increasingly interesting in conjunction with tunnel oxides. New deposition techniques have to be developed that deposit thin metal layers without degrading the gate dielectric. Recently, atomic layer deposition has been identified as a suitable method to deposit refractory metal alloys with well-defined properties. For the first time, a recently developed automated charcterization of capacitance-voltage (C-V) curves is employed to identify challeges during the initiation of a metal atomic layer deposition process. While some problems were eliminated by adapting the deposition process, others will require further process or tool modifications to reduce the nonuniformities abserved within each wafer. The temperature dependence of the C-V curves indicates an unintended titanium-rich layer at he interface, which disappears after annealing above 800°C. A further development of teh surface pretreatment and subsequent deposition will be neccessary to avoid this phenomenon. In this article, a very sensitive procedure to analyze the initiation of a metal atomic layer deposition process is presented.

BibTeX:
@article{Sell:Interf:03,
author = {B. Sell and A. S{\"a}nger and W. Krautschneider},
title = {{I}nterface analysis of atomic layer deposited-{T}i{N} gate electrodes on ultrathin {S}i{O}2 layers},
year = {2003},
journal = {J. Vac. Sci. Technol.},
pages = {931},
volume = {B21} }

[Abstract] [BibTeX]
A. Avellán, D. Schroeder, W. Krautschneider

Modeling random telegraph signals in the gate current of metal oxide semiconductor field effect transistors after oxide breakdown

Artikel in "Journal of Applied Physics", vol. 94, Nr. 1, p. 703-8, 2003

Abstract:
Measurements of random telegraph signals (RTS) in the gate curent of n-channel metal oxide semiconductor field effect transistors (MOSFETs) after oxide breakdown are presented. Two types of behavior of the time constants and the relative amplitudes of the signals as a function of gate voltage are observed. A theory relating time constants and relative amplitudes of the fluctuations to the energetic and geometric trap location in the oxide is developed. This theory is also applicable to the commonly observed RTS in the drain current of undamaged MOSFETs.

BibTeX:
@article{ASW:JAP:2003,
author = {A. Avellán and D. Schroeder and W. Krautschneider},
title = {{M}odeling random telegraph signals in the gate current of metal oxide semiconductor field effect transistors after oxide breakdown},
year = {2003},
journal = {Journal of Applied Physics},
number = {1},
pages = {703-8},
volume = {94} }

[Abstract] [BibTeX]
D. Schroeder, A. Avellán

Physical explanation of the barrier height temperature dependence in metal-oxide-semiconductor leakage current models

Artikel in "Applied Physics Letters", vol. 82, Nr. 25, p. 4510-2, 2003

Abstract:
A temperature dependence of the barrier height between silicon and oxide has been proposed by many authors in order to reflect experimental metal-oxide-semiconductor leakage current results. However, no satisfactory physical explanation of this dependence has yet been given. In this paper, the temperature dependence of the observed macroscopic barrier height is explained by thermal fluctuations of the microscopic local barrier height. Because of the exponential relationship between current and barrier height, the decrease of the barrier during the fluctuation has a dominating effect when compared to the increase, leading on the average to a raised leakage current and correspondingly to a lowered average barrier height.

BibTeX:
@article{SA:APL:2003,
author = {D. Schroeder and A. Avellán},
title = {{P}hysical explanation of the barrier height temperature dependence in metal-oxide-semiconductor leakage current models},
year = {2003},
journal = {Applied Physics Letters},
number = {25},
pages = {4510-2},
volume = {82} }

[Abstract] [BibTeX]
A. Avellán, E. Miranda, B. Sell, W. Krautschneider

Experimental study and modeling of the temperature dependence of soft breakdown conduction in ultrathin gate oxides

In Tagungsband "41st International Reliability Physics Symposium", 2003, p. 580-1
41st International Reliability Physics Symposium

Abstract:
Despite the many efforts devoted to improve our understanding of the physics of soft breakdown (SBD) conduction in ultrathin gate oxides, there are still some aspects of the phenomenon which have been rather overlooked and that are relevant for assessing the adequacy of the addressed transport mechanism. In particular, in this work, we focus our interest on the temperature dependence of SBD, mainly in the range in which real devices are commonly operated (-20°C to 160°C). A thorough experimental study involving samples with different oxide thicknesses and substrate types is presented, and the results are interpreted in terms of an extended version of the quantum point contact model (QPC) for the non-zero temperature case. Even though several approaches attempting to explain the SBD I-V characteristics have been proposed, analytical modeling of its temperature dependence has always been restricted to a single bias condition. In contrast, we provide a simple parameterization of the experimental data which accounts for both characteristics, I-V and I-T, within a consistent framework based on the physics of mesoscopic conductors. As we show below, the magnitude of the current flowing through the SBD spot essentially depends on the barrier height encountered by the incoming electrons, while the shape of the I-V characteristic is dictated by the particular features of the spot and the potential drops distribution. The model's suitability for circuit simulation opens the perspective to determine post breakdown circuit behavior and the impact of soft breakdown on specific applications.

BibTeX:
@inproceedings{AMS+:IRPS:2003,
author = {A. Avellán and E. Miranda and B. Sell and W. Krautschneider},
title = {{E}xperimental study and modeling of the temperature dependence of soft breakdown conduction in ultrathin gate oxides},
year = {2003},
booktitle = {41st International Reliability Physics Symposium},
note = {41st International Reliability Physics Symposium},
pages = {580-1} }

[Abstract] [BibTeX]
S. Schwantes, W. Krautschneider

Temperature effects in sub 50 nm CMOS circuits

In Tagungsband "Proc. 4th European Workshop on Ultimate Integration of Silicon, ULIS", 2003
ULIS 2003

Abstract:
This paper discusses the impact of the supply voltage and the threshold voltage on the temperature behavior of digital circuits with sub 50 nm feature sizes. For low supply voltages a positive temperature dependence of the drain current and the circuit speed can be observed. This is different from the common negative temperature dependence in conventional designs. The theory of this effect is discussed using test structures and device simulations. It is shown that a hazardous positive feedback may occur for low voltage technologies. This can lead to temperature instabilities for large circuits with very small feature sizes.

BibTeX:
@inproceedings{Schwantes:Temperature:03,
author = {S. Schwantes and W. Krautschneider},
title = {{T}emperature effects in sub 50 nm {C}{M}{O}{S} circuits},
year = {2003},
booktitle = {Proc. 4th European Workshop on Ultimate Integration of Silicon, ULIS},
note = {ULIS 2003} }

[Abstract] [BibTeX]

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2002

S. Schwantes and W. Krautschneider

Performance improvement of metal gate CMOS technologies with gigabit feature sizes

In Tagungsband "Proc. 5th Annual Workshop on Future Electronics SAFE", 2002
Eindhoven, The Netherlands, 2002

Abstract:
Abstract—For the first time we have investigated the impact of metal gates on the performance of large digital circuits by simulations. So far, the impact of metal gates has just been discussed on small circuits and single transistors [1]. The performance improvement is discussed based on the simulation of a simple ring oscillator and a 64bit adder for CMOS technologies with 100 nm to 10 nm feature sizes. The integration of metal gates allows a performance increase of large digital circuits by more than 33% for the 25 nm generation whereas small circuits like ring oscillators show no improvement. Metal gates are also helpful in the reduction of the total power consumption. A reduction of the total power consumption by 28% has been observed for the 64bit adder for smallest feature sizes. Even though the integration of metal gates into the standard CMOS process is still complicated it offers the potential to increase the performance significantly.

BibTeX:
@inproceedings{Schwantes:SAFE02,
author = {S. Schwantes and W. Krautschneider},
title = {{P}erformance improvement of metal gate {C}{M}{O}{S} technologies with gigabit feature sizes},
year = {2002},
month = {11},
booktitle = {Proc. 5th Annual Workshop on Future Electronics SAFE},
note = {Eindhoven, The Netherlands, 2002} }

[Abstract] [BibTeX]
A. Avellán, E. Miranda, B. Sell, D. Schroeder, W. Krautschneider

Temperature dependence of the hard breakdown current of MOS capacitors

In Tagungsband "32nd European Solid-State Device Research Conference", 2002, p. 463-6
32nd European Solid-State Device Research Conference

Abstract:
I-V curves as a function of temperature of broken down n- and p-type MOS capacitors with different oxide thicknesses are presented. In accumulation, a crossover of the temperature dependent curves is observed. At low voltages the hard breakdown current increases with temperature whereas it decreases with temperature for higher voltages. This behaviour can be straightforwardly linked to the available charge for conduction at the electrodes. MINIMOS simulations as well as theoretical considerations were performed that clearly support this idea. The presentation can be found at: http://www.essderc2002.deis.unibo.it/ESSDERC_web/Session_D22/D22_3.pdf

BibTeX:
@inproceedings{AMS+:ESSDERC:2002,
author = {A. Avellán and E. Miranda and B. Sell and D. Schroeder and W. Krautschneider},
title = {{T}emperature dependence of the hard breakdown current of {M}{O}{S} capacitors},
year = {2002},
month = {09},
booktitle = {32nd European Solid-State Device Research Conference},
note = {32nd European Solid-State Device Research Conference},
pages = {463-6} }

[Abstract] [BibTeX]
R. Peck and D. Schröder

Entwurf und Test eines mit sukzessiver Approximation arbeitenden 12-Bit-A/D-Wandlers

In Tagungsband "ANALOG 2002", Verlag VDE-Verlag, 2002, vol. 38, Serie "GMM-Fachbericht", p. 331-336
6. GMM/ITG-Diskussionssitzung, Bremen, 13.-14. Mai 2002

Abstract:
In diesem Beitrag wird über den aktuellen Zwischenstand unseres Projektes zum Entwurf eines effizienten entropie-codierenden A/D-Wandlers (ECOC) berichtet. Grundsätzliche Überlegungen zur Architektur des Analogteils führen zu einem Trade-Off zwischen Verlustleistung und Chipfläche, so dass eine optimale Wahl der Strukturparameter getroffen werden kann. Nach einigen Angaben zum Chiplayout wird ausführlich auf die Messergebnisse des ersten Testchips eingegangen, bei dem insbesondere die Verzerrungen und das Rauschen der integrierten Schaltung experimentell bestimmt wurden. Aus den Messergebnissen können Schlussfolgerungen hinsichtlich der Fehlerursachen in der Designphase und ent-sprechende Maßnahmen beim Redesign gezogen werden.

BibTeX:
@inproceedings{Peck:TestADC:2002,
author = {R. Peck and D. Schr{\"o}der},
title = {{E}ntwurf und {T}est eines mit sukzessiver {A}pproximation arbeitenden 12-{B}it-{A}/{D}-{W}andlers},
year = {2002},
month = {05},
booktitle = {ANALOG 2002},
note = {6. GMM/ITG-Diskussionssitzung, Bremen, 13.-14. Mai 2002},
pages = {331-336},
publisher = {VDE-Verlag},
series = {GMM-Fachbericht},
volume = {38} }

[Abstract] [BibTeX]
A. Avellán, W. Krautschneider

On-Chip-Stromverstärker zur Messung von Signalen im Zeitbereich

In Tagungsband "Analog 2002", Verlag VDE Verlag, 2002, vol. 38, Serie "GMM-Fachbericht", p. 145-9
Analog 2002

Abstract:
Es wird ein stromrückgekoppelter Operationsverstärker vorgestellt, mit dem Ströme eines zu untersuchenden MOS-Transistors direkt auf dem Chip verstärkt und strom-spannungsgewandelt werden. Die verstärkten Ströme können mit einfacherer Meßtechnik erfaßt beziehungsweise deren zeitlicher Verlauf problemlos mit einem Oszilloskop aufgenommen werden. Dies wird am Beispiel von Fluktuationen im Sourcestrom des MOS-Transistors beispielhaft aufgezeigt.

BibTeX:
@inproceedings{AK:Analog:2002,
author = {A. Avellán and W. Krautschneider},
title = {{O}n-{C}hip-{S}tromverst{\"a}rker zur {M}essung von {S}ignalen im {Z}eitbereich},
year = {2002},
month = {05},
booktitle = {Analog 2002},
note = {Analog 2002},
pages = {145-9},
publisher = {VDE Verlag},
series = {GMM-Fachbericht},
volume = {38} }

[Abstract] [BibTeX]
S. Vogel and D. Schröder

Systematischer Entwurf von Operationsverstärkern für minimale Verlustleistung bei gegebenen Rauschanforderungen

In Tagungsband "ANALOG 2002", Verlag VDE-Verlag, 2002, vol. 38, Serie "GMM-Fachbericht", p. 297-301
6. GMM/ITG-Diskussionssitzung, Bremen, 13.-14. Mai 2002

Abstract:
Für aktive RC-Filter wird der Zusammenhang zwischen Verlustleistung und Signal/Rausch-Verhältnis (SNR) in Abhängigkeit der frei wählbaren Schaltungsparameter untersucht. Dabei wird der Zusammenhang von Rauschen und Verlustleistung des verwendeten Operationsverstärkers (OpAmp) modellmäßig berücksichtigt. Hierdurch kann einerseits die externe Beschaltung des OpAmp so dimensioniert werden, dass bei möglichst geringer Leistungsaufnahme ein gefordertes SNR erreicht wird. Gleichzeitig kann der OpAmp selbst auf die Anwendung hin optimiert werden. Weiterhin kann vorab eine untere Grenze der Leistungsaufnahme ermittelt werden, um z.B. die prinzipielle Machbarkeit einer Aufgabenstellung abzuschätzen.

BibTeX:
@inproceedings{Vogel:OP-Entwurf:2002,
author = {S. Vogel and D. Schr{\"o}der},
title = {{S}ystematischer {E}ntwurf von {O}perationsverst{\"a}rkern f{\"u}r minimale {V}erlustleistung bei gegebenen {R}auschanforderungen},
year = {2002},
month = {05},
booktitle = {ANALOG 2002},
note = {6. GMM/ITG-Diskussionssitzung, Bremen, 13.-14. Mai 2002},
pages = {297-301},
publisher = {VDE-Verlag},
series = {GMM-Fachbericht},
volume = {38} }

[Abstract] [BibTeX]
B. Sell, A. Avellán, W. H. Krautschneider

Charge-Based Capacitance Measurements (CBCM) on MOS Devices

Artikel in "IEEE Transactions on Device and Materials Reliability", vol. 2, Nr. 1, p. 9-12, 2002

Abstract:
A new simple method of measuring capacitance-voltage characteristics of MOS devices is presented. Proceeding from the charge-based capacitance measurement technique suggested recently, a compact test structure with high resolution has been developed, which only requires measurement of dc quantities. The method was tested on a 0.6-µm CMOS process with small and large area capacitors and compared to well-known high-frequency capacitance-voltage results. Beside using a reference structure, a second means of extracting parasitic effects is demonstrated for small structures. The test structure allows measurements in a wide frequency range with high accuracy and low noise contribution at small capacitance levels.

BibTeX:
@article{SAK:TDMR:2002,
author = {B. Sell and A. Avellán and W. H. Krautschneider},
title = {{C}harge-{B}ased {C}apacitance {M}easurements ({C}{B}{C}{M}) on {M}{O}{S} {D}evices},
year = {2002},
month = {01},
journal = {IEEE Transactions on Device and Materials Reliability},
number = {1},
pages = {9-12},
volume = {2} }

[Abstract] [BibTeX]
B. Sell and D. Schumann and W.H. Krautschneider

Fast interface characterization of tunnel oxide MOS structures

Artikel in "IEEE Transactions on Nanotechnology", Nr. 1, p. 110, 2002

Abstract:
As new gate materials become increasingly interesting in conjuction with tunnel oxides, a fast and reliable interface characterization technique becomes indispensable. Fast turnaround times require a method which can be applied to simple test structures like planar capacitors. For the fist time, we demonstrate an automatic extreaction of physical oxide thickness and flatband potential from capacitance-voltage measurements which includes quantum confinement effects and Fermi-Dirac statistics. Automatic extraction is necessary for uniformity analysis across a whole wafer. New gate materials are typically binary or ternary alloys where the interface to the gate dielectric is very sensitive to deposition parameters. Such saystems are likely to show higher nonuniformities than polysilicon electrodes. An example is presented where polysilicon gates exhibit a uniformity in flatband potential within a wafer of less than ± 15 mV while a thickness variation of 0.1 nm has been observed.

BibTeX:
@article{Sell:IEEE:2002,
author = {B. Sell and D. Schumann and W.H. Krautschneider},
title = {{F}ast interface characterization of tunnel oxide {M}{O}{S} structures},
year = {2002},
journal = {IEEE Transactions on Nanotechnology},
number = {1},
pages = {110} }

[Abstract] [BibTeX]
B. Sell and A. Saenger and W. Krautschneider

Interface Analysis of ALD-TiN Gate-Electrodes on Ultrathin Si02 Layers

Artikel in "Vacuum Science and Technology B", 2002

Abstract:

BibTeX:
@article{Sell:ALD-TiN:2002,
author = {B. Sell and A. Saenger and W. Krautschneider},
title = {{I}nterface {A}nalysis of {A}{L}{D}-{T}i{N} {G}ate-{E}lectrodes on {U}ltrathin {S}i02 {L}ayers},
year = {2002},
journal = {Vacuum Science and Technology B} }

[BibTeX]
B. Fuchs, S. Vogel, D. Schroeder

Universal application-specific integrated circuit for bioelectric data acquisition

Artikel in "Medical Engineering & Physics", vol. 24, p. 695--701, 2002

Abstract:
Use of highly integrated application specific circuits (ASICs) in bioelectric data acquisition systems promise important new insights into the origin of a large variety of health problems by providing light-weight, low-power, low-cost medical measurement devices that allow longterm studies. They also promise significant cost reduction in medical care, as patients in principle become mobile and do not have to be hospitalized for observation. We report on the development and successful implementation of a universal ASIC, designed to meet key characteristics of a broad variety of bioelectric signals in terms of their dynamic range, sampling rate and input referred noise; e. g. Electrocardiogram (ECG), Electroencephalogram (EEG) and, most constringently, Evoked Potentials (EP). Our approach for the first time makes cost-effective use of state-of-the-art microelectronics in medical measurement equipment, thus offering to replace discrete, single application devices used at present.

BibTeX:
@article{Fuchs:ASEEG:2002,
author = {B. Fuchs and S. Vogel and D. Schroeder},
title = {{U}niversal application-specific integrated circuit for bioelectric data acquisition},
year = {2002},
journal = {Medical Engineering {&} Physics},
pages = {695--701},
volume = {24} }

[Abstract] [BibTeX]
S. Schwantes and W. Krautschneider

Impact of Parasitic Elements on the Performance of Digital CMOS Circuits with Gigabit Feature Size

In Tagungsband "Proc. 3rd European Workshop on Ultimate Integration of Silicon, ULIS", 2002, p. 49
ULIS 2002

Abstract:

BibTeX:
@inproceedings{Schwantes:ULIS:2002,
author = {S. Schwantes and W. Krautschneider},
title = {{I}mpact of {P}arasitic {E}lements on the {P}erformance of {D}igital {C}{M}{O}{S} {C}ircuits with {G}igabit {F}eature {S}ize},
year = {2002},
booktitle = {Proc. 3rd European Workshop on Ultimate Integration of Silicon, ULIS},
note = {ULIS 2002},
pages = {49} }

[BibTeX]

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2001

W. Krautschneider, F. Hofmann

A trench DRAM gain cell for high signal charge at reduced cell area

In Tagungsband "Proceedings of European Solid-State Devices Research Conference", 2001, p. 135
ESSDERC 2001

Abstract:
A novel DRAM trench gain cell for high signal charge at a small cell area below 8F² has been developed. The gain concept allows to decrease significantly the trench depth without sacrifying the cell performance. Demonstrators with full functionality and increased signal charge were processed and experimentally tested. This cell type has the potential for a cell area reduction to 6F² and further down to 4F² and less.

BibTeX:
@inproceedings{Krautschneider:DRAM:2001,
author = {W. Krautschneider and F. Hofmann},
title = {{A} trench {D}{R}{A}{M} gain cell for high signal charge at reduced cell area},
year = {2001},
month = {09},
booktitle = {Proceedings of European Solid-State Devices Research Conference},
note = {ESSDERC 2001},
pages = {135} }

[Abstract] [BibTeX]
S. Schwantes, W. Krautschneider

Relevance of gate current for the functionality of deep submicron CMOS circuits

In Tagungsband "Proceedings of European Solid-State Devices Research Conference", 2001, p. 471
ESSDERC 2001

Abstract:
Gate current through very thin gate oxides can endanger the proper functionality of CMOS circuits. For investigation of this effect, we have implemented an improved analytical model for the gate current into a circuit simulator and determined the impact of the gate current on the functionality of basic CMOS circuits. Taking into consideration the local fluctuations of the gate oxide thickness results in a revised lower limit of the nominal gate oxide thickness

BibTeX:
@inproceedings{Schwantes:submicron:2001,
author = {S. Schwantes and W. Krautschneider},
title = {{R}elevance of gate current for the functionality of deep submicron {C}{M}{O}{S} circuits},
year = {2001},
month = {09},
booktitle = {Proceedings of European Solid-State Devices Research Conference},
note = {ESSDERC 2001},
pages = {471} }

[Abstract] [BibTeX]
R. Peck, D. Schröder

Architekturentwurf für einen entropie-codierenden effizienten Analog/Digital-Wandler

In Tagungsband "Entwurf Integrierter Schaltungen", Verlag VDE-Verlag (Berlin/Offenbach), 2001, vol. 164, Serie "ITG-Fachbericht", p. 243
10. E.I.S.-Workshop, Dresden, 3.-5. April 2001

Abstract:
Thematik: Gegenstand des Beitrags sind neue Schaltungsarchitekturen für integrierte Analog/Digital-Wandler (A/D-Wandler, ADC), die die informationstheoretische Redundanz des Eingangssignals für eine effiziente Arbeitsweise ausnutzen. Dazu werden Analog/Digital-Wandlung und Entropie-Codierung in einem Vorgang so kombiniert, dass eine integrierte Datenkompression sowie im Vergleich zu herkömmlichen Verfahren niedrigere Verlustleistung oder höhere Abtastrate erreicht wird. Dadurch können entsprechende anspruchsvolle Anforderungen, die an Analog/-Digital-Wandler insbesondere hinsichtlich der Betriebsdauer bei batteriebetriebenen Anwendungen gestellt werden, leichter erfüllt werden.

BibTeX:
@inproceedings{Entropie:2001,
author = {R. Peck and D. Schr{\"o}der},
title = {{A}rchitekturentwurf f{\"u}r einen entropie-codierenden effizienten {A}nalog/{D}igital-{W}andler},
year = {2001},
month = {04},
booktitle = {Entwurf Integrierter Schaltungen},
address = {Berlin/Offenbach},
note = {10. E.I.S.-Workshop, Dresden, 3.-5. April 2001},
pages = {243},
publisher = {VDE-Verlag},
series = {ITG-Fachbericht},
volume = {164} }

[Abstract] [BibTeX]
B. Fuchs, D. Schröder

Prädiktive Signalverarbeitung für bioelektrische Signale

In Tagungsband "Entwurf Integrierter Schaltungen", Verlag VDE-Verlag (Berlin/Offenbach), 2001, vol. 164, Serie "ITG-Fachbericht", p. 17
10. E.I.S.-Workshop, Dresden, 3.-5. April 2001

Abstract:
Thematik: Die Reduktion der Leistungsaufnahme tragbarer medizinischer Meßgeräte zur Aufnahme und Übertragung bioelektrischer Signale, wie z.B. des Elektrokardiogramms (EKG), ist ein wichtiger Schritt bei der Entwicklung telemedizinischer Anwendungen. Zu diesem Zweck wurde ein neues Schaltungskonzept entwickelt, das hier vorgestellt werden soll. Dabei wird ein Sigma-Delta A/D-Wandler um einen Prädiktor und einen D/A-Wandler ergänzt. Durch den Einsatz des Prädiktors kann ein typisches bioelektrisches Eingangssignal mit deutlich reduzierter Leistungsaufnahme verarbeitet werden. Das Verfahren eignet sich aber ebenso zur Verarbeitung zahlreicher anderer Signale. Die Darstellung reicht in diesem Beitrag von der Systemebene (Matlab/Simulink) bis zu einigen konkreten Realisierungsvorschlägen. Abschließend werden die Grenzen und Chancen des Konzeptes diskutiert, wobei u.a. Mismatch-Fehler bei einer Realisierung als integrierte Schaltung berücksichtigt werden.

BibTeX:
@inproceedings{Pr{\"a}diktiv:2001,
author = {B. Fuchs and D. Schr{\"o}der},
title = {{P}r{\"a}diktive {S}ignalverarbeitung f{\"u}r bioelektrische {S}ignale},
year = {2001},
month = {04},
booktitle = {Entwurf Integrierter Schaltungen},
address = {Berlin/Offenbach},
note = {10. E.I.S.-Workshop, Dresden, 3.-5. April 2001},
pages = {17},
publisher = {VDE-Verlag},
series = {ITG-Fachbericht},
volume = {164} }

[Abstract] [BibTeX]
A. Avellan, W. Krautschneider, S. Schwantes

Observation and modeling of random telegraph signals in the gate and drain currents of tunneling metal-oxide-semiconductor field-effect transistors

Artikel in "Applied Physics Letters", vol. 78, Nr. 18, p. 2790-2, 2001

Abstract:
Parallel measurements of random telegraph signals (RTS) in the gate and drain current of n-metal-oxide-semiconductor field effect transistors with 1.3 nm thin gate oxides are presented. RTS appear simultaneously in both currents. Contrarily to what could be expected the signals have opposite sign in gate and drain current. A model is proposed to explain this phenomenon by the Schottky effect. The relative amplitude of the signal fluctuation in the gate current is significantly higher than that in the drain current. Therefore, the gate current is a much more sensitive indicator for RTS than the drain current.

BibTeX:
@article{AKS:APL:2001,
author = {A. Avellan and W. Krautschneider and S. Schwantes},
title = {{O}bservation and modeling of random telegraph signals in the gate and drain currents of tunneling metal-oxide-semiconductor field-effect transistors},
year = {2001},
month = {03},
journal = {Applied Physics Letters},
number = {18},
pages = {2790-2},
volume = {78} }

[Abstract] [BibTeX]
D. Schröder

Multi-Nature Systems: Optoelektronische, mechatronische und andere gemischte Systeme

Tagungsband/Vorträge der ITG/GI/GMM & TU Hamburg-Harburg, Verlag TUHH Technologie GmbH (Hamburg), 2001, Herausgeber D. Schröder
3. Workshop in Hamburg, 22.2.2001

Abstract:
Veranstalter: Fachgruppe 1 "Allgemeine Entwurfsmethodik und Unterstützung von Entwurfsprozessen für Schaltungen und Systeme" der Kooperationsgemeinschaft RSS von GI, GMM und ITG sowie die TU Hamburg-Harburg.
Thematik: Im Mittelpunkt des Workshops standen Entwurf und Applikation von technischen Systemen mit gemeinsamen elektronischen und nicht-elektronischen - wie z.B. optischen, mechanischen, thermischen, fluidischen oder akustischen - Komponenten. Die Thematik des Workshops umfasst sowohl die Sicht auf heterogene Systeme als Ganzes (Spezifikation, Modellierung, Entwurf, Beispiele) als auch Systemkomponenten (Sensoren, Aktoren, spezielle elektronische Komponenten).

Homepage des Workshops

BibTeX:
@proceedings{Multi-Nature:2001,
author = {D. Schr{\"o}der},
title = {{M}ulti-{N}ature {S}ystems: {O}ptoelektronische, mechatronische und andere gemischte {S}ysteme},
year = {2001},
month = {02},
address = {Hamburg},
editor = {D. Schr{\"o}der},
note = {3. Workshop in Hamburg, 22.2.2001},
organization = {ITG/GI/GMM {&} TU Hamburg-Harburg},
publisher = {TUHH Technologie GmbH} }

[Abstract] [BibTeX]
D. Preikszat

Multiple Input Floating Gate MOSFETs in der analogen CMOS-Schaltungstechnik

Dissertation an der TU Hamburg-Harburg, 2001
Shaker-Verlag (Berichte aus der Halbleitertechnik)

Abstract:

BibTeX:
@phdthesis{MIFGMOSFET:2000,
author = {D. Preikszat},
title = {{M}ultiple {I}nput {F}loating {G}ate {M}{O}{S}{F}{E}{T}s in der analogen {C}{M}{O}{S}-{S}chaltungstechnik},
year = {2001},
note = {Shaker-Verlag (Berichte aus der Halbleitertechnik)},
school = {TU Hamburg-Harburg} }

[BibTeX]
A. Avellan, W. Krautschneider, B. Sell

Softbreakdown and RTS in gate and drain currents of MOS transistors with ultrathin oxides

In Tagungsband "16th International Conference on Noise in Physical Systems and 1/f Fluctuations", 2001, p. 375-8
16th International Conference on Noise in Physical Systems

Abstract:
Measurements on n-channel MOS transistors with 2,7 nm thin oxides after softbreakdown are presented. Location and hardness of the breakdown can be extracted from simultaneous gate and drain current DC and random telegraph signal measurements. For breakdown locations close to the drain, the random telegraph signals of gate and drain currents are correlated whereas no correlation is found for breakdown locations close to the source.

BibTeX:
@inproceedings{AKS:ICNF:2001,
author = {A. Avellan and W. Krautschneider and B. Sell},
title = {{S}oftbreakdown and {R}{T}{S} in gate and drain currents of {M}{O}{S} transistors with ultrathin oxides},
year = {2001},
booktitle = {16th International Conference on Noise in Physical Systems and 1/f Fluctuations},
note = {16th International Conference on Noise in Physical Systems},
pages = {375-8} }

[Abstract] [BibTeX]

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2000

R. Göttsche, A. Avellan, D. Preikszat, W. Krautschneider

Multifunktionale Logikeinheiten als rekonfigurierbare Redundanzelemente

In Tagungsband "Mikroelektronik für die Informationstechnik", Verlag VDE-Verlag (Berlin/Offenbach), 2000, vol. 162, Serie "ITG-Fachbericht", p. 151
ITG-Workshop, Darmstadt, 20.-21.11.2000

Abstract:
Die hier vorgestellte Arbeit handelt von multifunktionalen Logikelementen, welche die für die Zukunft wichtige Funktionalität pro Flächeneinheit wesentlich erhöhen. Sie erläutert die dazugehörigen Grundlagen und stellt eine in Folge dessen entwickelte rekonfigurierbare Logikredundanz für Volladdierer/-subtrahierer und einen ersten Ansatz eines Redundanz-Controllers für deren autonomen Einsatz vor.

BibTeX:
@inproceedings{Logikeinheiten:2000,
author = {R. G{\"o}ttsche and A. Avellan and D. Preikszat and W. Krautschneider},
title = {{M}ultifunktionale {L}ogikeinheiten als rekonfigurierbare {R}edundanzelemente},
year = {2000},
month = {11},
booktitle = {Mikroelektronik f{\"u}r die Informationstechnik},
address = {Berlin/Offenbach},
note = {ITG-Workshop, Darmstadt, 20.-21.11.2000},
pages = {151},
publisher = {VDE-Verlag},
series = {ITG-Fachbericht},
volume = {162} }

[Abstract] [BibTeX]
A. Zuckerstätter, T. Schloesser, F. Hofmann, B. Yuwono, A. Gschwandtner, A. Grassl, G. Innertsberger, W. Krautschneider

DRAM cell with high signal charge and small storage capacitance using the gain concept

In Tagungsband "Proceedings European Solid-State Device Research Conference", 2000, p. 196
European Solid-State Device Research Conference

Abstract:
A new DRAM cell has been developed that features high signal charge and low aspect ratio of the storage capacitor. It can be fabricated based on a standard CMOS process, so that the cell can be integrated into existing technologies. This has been verified by processing of demonstrator cells that provide signal charges greater by factors than as of conventional DRAM cells.

BibTeX:
@inproceedings{DRAMCell:2000,
author = {A. Zuckerst{\"a}tter and T. Schloesser and F. Hofmann and B. Yuwono and A. Gschwandtner and A. Grassl and G. Innertsberger and W. Krautschneider},
title = {{D}{R}{A}{M} cell with high signal charge and small storage capacitance using the gain concept},
year = {2000},
month = {09},
booktitle = {Proceedings European Solid-State Device Research Conference},
note = {European Solid-State Device Research Conference},
pages = {196} }

[Abstract] [BibTeX]
B. Sell, J. Willer, K. Pomplun, A. Sänger, D. Schumann, W. Krautschneider

Interface characteristics between tungsten silicide electrodes and thin dielectrics

In Tagungsband "Materials for Advanced Metallization", 2000
MAM2000, Stresa, Italy

Abstract:
In today's ULSI technology there is an increasing demand in metal electrodes for storage capacitors and transistors. In this publication we present an investigation of MOS capacitor structures with CVD Tungsten Silicide (WSix) as metal electrode in conjunction with Silicon dioxide (SiO2) and oxidized Nitride (NO). Bulk Silicon and poly Silicon were used as second electrode respectively. Tungsten Silicide has been used both as gate electrode and as bottom electrode. For both cases thermalstability up to 850°C with low leakage current has been shown. Band discontinuities between SiO2 and WSix were estimated from current-voltage measurements.

BibTeX:
@inproceedings{Interface:2000,
author = {B. Sell and J. Willer and K. Pomplun and A. S{\"a}nger and D. Schumann and W. Krautschneider},
title = {{I}nterface characteristics between tungsten silicide electrodes and thin dielectrics},
year = {2000},
booktitle = {Materials for Advanced Metallization},
note = {MAM2000, Stresa, Italy} }

[Abstract] [BibTeX]

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1999

S. Vogel, D. Schröder

Rauschen und Verlustleistung in aktiven, zeitkontinuierlichen Filtern

In Tagungsband "Entwurf Integrierter Schaltungen", Verlag VDE-Verlag (Berlin/Offenbach), 1999, vol. 29, Serie "GMM-Fachbericht", p. 23
9. E.I.S.-Workshop, Darmstadt, 22.-24. September 1999

Abstract:
Es wird das Rauschen in aktiven RC-Filtern unter besonderer Berücksichtigung des Rauschens der aktiven Elemente untersucht. Zusätzlich wird die Verlustleistung in den aktiven und passiven Elementen berücksichtigt. Es resultiert eine Darstellung des Zusammenhanges zwischen Verlustleistung und Signal/Rausch -Verhältnis (SNR) in Abhängigkeit einiger zum Teil frei wählbarer Schaltungsparameter. Auf Grund dieser Darstellung können für eine vorgegebene Übertragungsfunktion verschiedene Schaltungstopologien auf symbolischer Ebene verglichen werden und diejenige mit der geringsten Leistungsaufnahme bei gefordertem SNR ausgewählt und soweit dimensioniert werden, daß bei möglichst geringer Leistungsaufnahme das SNR erreicht wird. Weiterhin kann vorab schon eine grobe Schätzung der Leistungsaufnahme gemacht werden, ohne die Schaltung schon im Detail zu bestimmen.

BibTeX:
@inproceedings{Rauschen:1999,
author = {S. Vogel and D. Schr{\"o}der},
title = {{R}auschen und {V}erlustleistung in aktiven, zeitkontinuierlichen {F}iltern},
year = {1999},
month = {09},
booktitle = {Entwurf Integrierter Schaltungen},
address = {Berlin/Offenbach},
note = {9. E.I.S.-Workshop, Darmstadt, 22.-24. September 1999},
pages = {23},
publisher = {VDE-Verlag},
series = {GMM-Fachbericht},
volume = {29} }

[Abstract] [BibTeX]
G. Innertsberger, R. Jurk, J. Felsner, R. Kakoschke, B. Yuwono, T. Schlösser, W. Krautschneider, A. Gschwandtner

The influence of vapor phase cleaning introduced fluorine on various MOS devices

In Tagungsband "MRS Spring Meeting" der Materials Research Society, 1999
San Francisco, USA, April 1999

Abstract:
The influence of Vapor Phase Precleanings leads to different adjustable fluorine content and is discussed for non-volatile memory devices, advanced MOS transistors and ultra thin gate dielectrics. On the one hand the Qbd values for in situ cleaned samples are lower than for wet cleaned samples. Performing cycle stress on EEPROMs the tunnel oxide (7.5nm) degrades as the faster as the more fluorine is built into the oxide. On the other hand MOS transistor characteristics shows show a significant improvement of on the negative bias temperature instability (NBTI) of PMOS threshold voltage. MOS transistors with ultra thin gate dielectrics (1.5nm) show the expected significant increase of the saturation current compared with 0.35mm technology (tox=7.5nm) and excellent tbd values when the in situ cleaning is used.

BibTeX:
@inproceedings{VAPOR_PHASE:1999,
author = {G. Innertsberger and R. Jurk and J. Felsner and R. Kakoschke and B. Yuwono and T. Schl{\"o}sser and W. Krautschneider and A. Gschwandtner},
title = {{T}he influence of vapor phase cleaning introduced fluorine on various {M}{O}{S} devices},
year = {1999},
month = {04},
booktitle = {MRS Spring Meeting},
note = {San Francisco, USA, April 1999},
organization = {Materials Research Society} }

[Abstract] [BibTeX]
B. Yuwono, T. Schlösser, A. Gschwandtner, G. Innertsberger, A. Grassl, A. Olbrich, W. Krautschneider

Reliability of ultra thin oxide and nitride films in the 1 nm and 2 nm range

In Tagungsband "Proceedings of INFOS 1999", 1999
INFOS 1999

Abstract:
The scaled-down MOSFETs of the 16 Gbit generation and beyond will require a gate dielectric thickness less than 2 nm. Reliability of ultra thin dielectrics were investigated in DC and AC stress at room and elevated temperatures.

BibTeX:
@inproceedings{thin_electric_films:1999,
author = {B. Yuwono and T. Schl{\"o}sser and A. Gschwandtner and G. Innertsberger and A. Grassl and A. Olbrich and W. Krautschneider},
title = {{R}eliability of ultra thin oxide and nitride films in the 1 nm and 2 nm range},
year = {1999},
booktitle = {Proceedings of INFOS 1999},
note = {INFOS 1999} }

[Abstract] [BibTeX]

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1998

B. Fuchs, S. Vogel, D. Schröder, R. Paul, U. Rückert, M. Besson, G. von Czettritz

Autonome EKG-Elektrode zur kabellosen Patientenüberwachung

In Tagungsband "Mikroelektronik für die Informationstechnik", Verlag VDE-Verlag (Berlin/Offenbach), 1998, vol. 147, Serie "ITG-Fachbericht", p. 137
Workshop, Hannover , 3.-4. März 1998

Abstract:
Im folgenden wird über die Entwicklung integrierter Schaltkreise in 0,8 µm CMOS Technologie zur Gewinnung und Übermittlung von Biosignalen, wie zum Beispiel dem Elektrokardiogramm (EKG), der Atemtätigkeit des Brustkorbes, der Blutsauerstoffsättigung oder dem Elektroenzephalogramm (EEG) berichtet. Ein Ziel dieser Arbeit ist die autonome EKG-Elektrode, die aufgrund ihrer kompakten Größe und geringer Leistungsaufnahme, durch den Einsatz anwendungsspezifischer IC's, komplett (mit Stromversorgung, gesamter Elektronik und den Elektrodenkontakten zur Haut) auf den Patient en als Pflasterelektrode aufgeklebt werden kann. Dadurch werden Langzeit- oder Belastungsst udien in der medizinischen Diagnostik komfortabler und zuverlässiger. Das gilt besonde rs für den Bereich der Säuglingsüberwachung (z.B. bei der Vermeidung des plötzlichen Kindstodes).

BibTeX:
@inproceedings{Patienten{\"u}berwachung:1998,
author = {B. Fuchs and S. Vogel and D. Schr{\"o}der and R. Paul and U. R{\"u}ckert and M. Besson and G. von Czettritz},
title = {{A}utonome {E}{K}{G}-{E}lektrode zur kabellosen {P}atienten{\"u}berwachung},
year = {1998},
month = {03},
booktitle = {Mikroelektronik f{\"u}r die Informationstechnik},
address = {Berlin/Offenbach},
note = {Workshop, Hannover , 3.-4. M{\"a}rz 1998},
pages = {137},
publisher = {VDE-Verlag},
series = {ITG-Fachbericht},
volume = {147} }

[Abstract] [BibTeX]
M. Zwerg, M. Bisping, D. Schröder, S. Vogel

A mixed-signal interface IC for self-scanning linear photodiode arrays

In Tagungsband "Proceedings Design, Automation and Test in Europe Conference 1998 (DATE '98), Designer Track", 1998, p. 57
Paris, 23.-26. Febr. 1998

Abstract:
The paper describes the design of a mixed signal ASIC, created in a student project. The function of the mixed signal IC is an interface between a linear photodiode array and an A/D-converter for subsequent digital processing. During this project the IC has been designed, fabricated and tested. Specification, architecture, mixed-signal design and layout issues are discussed.

BibTeX:
@inproceedings{photodiode:1998,
author = {M. Zwerg and M. Bisping and D. Schr{\"o}der and S. Vogel},
title = {{A} mixed-signal interface {I}{C} for self-scanning linear photodiode arrays},
year = {1998},
month = {02},
booktitle = {Proceedings Design, Automation and Test in Europe Conference 1998 (DATE '98), Designer Track},
note = {Paris, 23.-26. Febr. 1998},
pages = {57} }

[Abstract] [BibTeX]
J. Malin, D. Schröder, B. Fuchs, S. Vogel, R. Paul

Integrierte Sensorschaltung zur autonomen EKG-Aufnahme und -Übertragung

In Tagungsband "Mobil mit Mikroelektronik und Mikrosystemtechnik", Verlag VDE-Verlag (Berlin/Offenbach), 1998, vol. 23, Serie "GMM-Fachbericht", p. 119
?

Abstract:
Im Rahmen der Diplomarbeit wurde eine integrierte Schaltung zur Aufnahme und Übertragung des Elektrokardiogramms (EKG) entwickelt, mit der sich eine kompakte EKG-Sensorelektrode aufbauen läßt, die auf der Haut befestigt wird und das EKG-Signal über eine Funkverbindung direkt zu einer Auswertestation übermittelt. Die leistungsarme integrierte Mixed-Signal-Schaltung enthält analoge Schaltungsteile zur Filterung, Verstärkung und Digitalisierung des EKG-Signals und eine asynchrone Schnittstelle zur Ausgabe der EKG-Daten und zum Empfang von Befehlen, durch die zusätzlich implementierte Kontroll- und Testfunktionen ausgeführt werden können.

BibTeX:
@inproceedings{Sensorschaltungen:1998,
author = {J. Malin and D. Schr{\"o}der and B. Fuchs and S. Vogel and R. Paul},
title = {{I}ntegrierte {S}ensorschaltung zur autonomen {E}{K}{G}-{A}ufnahme und -{\"{U}}bertragung},
year = {1998},
booktitle = {Mobil mit Mikroelektronik und Mikrosystemtechnik},
address = {Berlin/Offenbach},
note = {?},
pages = {119},
publisher = {VDE-Verlag},
series = {GMM-Fachbericht},
volume = {23} }

[Abstract] [BibTeX]

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1997

D. Schröder, U. Witkowski

Simulation of semiconductor devices with non-ideal metallic contacts

Artikel in "IEEE Transactions on Electron Devices", vol. 44, Nr. 4, p. 679, 1997

Abstract:
A comprehensive model of metal-semiconductor contacts that includes both thermionic emission and tunneling effects is reported. The model is particularly suited for the simulation of power devices. As an application example, simulation results of a hybrid Schottky-/pn-diode, also known as Junction Barrier Controlled Schottky Diode (JBS) or Merged pn-Schottky Diode (MPS), are presented.

BibTeX:
@article{Simulation:Schr{\"o}der:1997,
author = {D. Schr{\"o}der and U. Witkowski},
title = {{S}imulation of semiconductor devices with non-ideal metallic contacts},
year = {1997},
journal = {IEEE Transactions on Electron Devices},
number = {4},
pages = {679},
volume = {44} }

[Abstract] [BibTeX]
D. Schröder

Boundary and interface conditions of transport equations for device simulation

In Tagungsband "Festkörperprobleme/Advances in Solid State Physics", Verlag Vieweg Verlag (Braunschweig/Wiesbaden), 1997, vol. 36, p. 266-283, Herausgeber Helbig

Abstract:
For the simulation of semiconductor devices, models of the physical transport processes at the interfaces between different materials (semiconductors, metals, insulators) must be available. Usually, these models are formulated as boundary or interface conditions for the transport equations. In this paper, the inflow moments method is introduced, which allows to systematically derive such models from basic principles of interface electron transport. A review of a wide variety of models for semiconductors-semiconductor-, semiconductor-metal-, and semiconductor-insulator-interfaces is presented; the models are classified according to the general framework and discussed in the context of device simulation. In addition, a new model for hot electrons at an ohmic contact is included.

BibTeX:
@inproceedings{Boundary:1997,
author = {D. Schr{\"o}der},
title = {{B}oundary and interface conditions of transport equations for device simulation},
year = {1997},
booktitle = {Festk{\"o}rperprobleme/Advances in Solid State Physics},
address = {Braunschweig/Wiesbaden},
editor = {Helbig},
pages = {266-283},
publisher = {Vieweg Verlag},
volume = {36} }

[Abstract] [BibTeX]

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1996

M. Brandstetter, D. Schröder

Informations- und Integrationsinfrastruktur zur effizienten Realisierung systemtechnischer und technologienaher Design-Flows

In Tagungsband "Allg. Methodik und Unterstützung von Entwurfsprozessen für Schaltungen und Systeme", 1996, p. 93
GI/ITG/GMM-Workshop, Paderborn, 1. März 1996

Abstract:
Dieser Beitrag zum GI/ITG/GMM Workshop stellt die Informationsinfrastruktur mit der sie begleitend implementierten Integrationsinfrastruktur in ihrer Anwendung in der flexiblen Integrationsplattform SYSWORK dar. Dabei werden einerseits hinsichtlich des Themenkomplexes der Strukturierung von Entwurfsprozessen die Bereiche des durchgängigen Design-Flows sowie der Schnittstelle in heterogenen Systemen angerissen und andererseits hinsichtlich der mikrosystemtechnisch/technologisch orientierten CAD Umgebungen die automatisierte, anwendungsbezogene CAD-Systemintegration, die Ableitung von Datenaustauschformaten und die aus der Informationsmodellierung abgeleiteten Standardisierungsbeiträge angesprochen.

BibTeX:
@inproceedings{Design_Flow:1996,
author = {M. Brandstetter and D. Schr{\"o}der},
title = {{I}nformations- und {I}ntegrationsinfrastruktur zur effizienten {R}ealisierung systemtechnischer und technologienaher {D}esign-{F}lows},
year = {1996},
month = {03},
booktitle = {Allg. Methodik und Unterst{\"u}tzung von Entwurfsprozessen f{\"u}r Schaltungen und Systeme},
note = {GI/ITG/GMM-Workshop, Paderborn, 1. M{\"a}rz 1996},
pages = {93} }

[Abstract] [BibTeX]
G. Hinrichs, D. Preikszat

A new process for simultaneous fabrication of a buried and a surface oxide layer

Artikel in "Solid-State Electronics", vol. 39, p. 231-235, 1996

Abstract:
A new low energy ion implantation process for producing a buried oxide layer and a thin surface oxide at the same timeis presented. The utilized process is ion beam induced oxidation of silicon, which is based on the implantation of oxygenin an oxygen atmosphere. An oxidation mechanism is proposed. The dependence of the thickness of the surface oxideon the oxygen pressure in the implant chamber and on the O+ ion dose was investigated by Auger electronspectroscopy, C-V measurements and ellipsometry. The obtained thickness of the surface oxide was between 40 and 60 Å. The insulation properties have been proven to be good within a voltage range of a few volts by I-V measurements.

BibTeX:
@article{fabrication:1996,
author = {G. Hinrichs and D. Preikszat},
title = {{A} new process for simultaneous fabrication of a buried and a surface oxide layer},
year = {1996},
journal = {Solid-State Electronics},
pages = {231-235},
volume = {39} }

[Abstract] [BibTeX]
R. Paul, S. Paul

Arbeitsbuch zu Elektrotechnik 1 (Felder, einfache Netzwerke)

Buch, erschienen bei Springer Verlag (Berlin), 1996

Abstract:

BibTeX:
@book{Arbeitsbuch_E-Technik:1996,
author = {R. Paul and S. Paul},
title = {{A}rbeitsbuch zu {E}lektrotechnik 1 ({F}elder, einfache {N}etzwerke)},
year = {1996},
address = {Berlin},
publisher = {Springer Verlag} }

[BibTeX]
R. Paul, S. Paul

Arbeitsbuch zu Elektrotechnik 2 (Netzwerke)

Buch, erschienen bei Springer Verlag (Berlin), 1996

Abstract:

BibTeX:
@book{Arbeitsbuch_E-Technik2:1996,
author = {R. Paul and S. Paul},
title = {{A}rbeitsbuch zu {E}lektrotechnik 2 ({N}etzwerke)},
year = {1996},
address = {Berlin},
publisher = {Springer Verlag} }

[BibTeX]
R. Paul, S. Paul

Repetitorium der Elektrotechnik

Buch, erschienen bei Springer Verlag, 1996

Abstract:

BibTeX:
@book{Repetitorium_Elektrotechnik:19,
author = {R. Paul and S. Paul},
title = {{R}epetitorium der {E}lektrotechnik},
year = {1996},
publisher = {Springer Verlag} }

[BibTeX]

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1995

C. Gatzke, D. Schröder

Transient three-dimensional device simulation with PARDESIM

In Tagungsband "Proceedings of the 1995 Workshop on High Performance Electron Devices for Microwave & Optoelectronic Applications (EDMO '95)", Verlag IEEE, 1995, p. 124
London, 27 Nov. 1995

Abstract:
A device simulator that solves semiconductor models on a parallel computer system has been developed. We present our method for the numerical solution of time dependent semiconductor equations in up to three dimensions. The chosen discretisation in time is suitable for stiff problems where time constants spread over many orders of magnitude. The efficiency of the approach is demonstrated with some examples including the simulation of photo detectors.

BibTeX:
@inproceedings{Transient_device_simulation:1995,
author = {C. Gatzke and D. Schr{\"o}der},
title = {{T}ransient three-dimensional device simulation with {P}{A}{R}{D}{E}{S}{I}{M}},
year = {1995},
month = {11},
booktitle = {Proceedings of the 1995 Workshop on High Performance Electron Devices for Microwave {&} Optoelectronic Applications (EDMO '95)},
note = {London, 27 Nov. 1995},
pages = {124},
publisher = {IEEE} }

[Abstract] [BibTeX]
M. Brandstetter

Ableitung konsistenter Datenaustauschformate für den analog-physikalischen CAD Bereich durch geeignete Erweiterung der standardisierten Informationsmodelle

In Tagungsband "Tagungsband 7. E.I.S.-Workshop", 1995
7. E.I.S.-Workshop, Chemnitz, 7.-8. November 1995

Abstract:

BibTeX:
@inproceedings{Datenaustauschformate:1995,
author = {M. Brandstetter},
title = {{A}bleitung konsistenter {D}atenaustauschformate f{\"u}r den analog-physikalischen {C}{A}{D} {B}ereich durch geeignete {E}rweiterung der standardisierten {I}nformationsmodelle},
year = {1995},
month = {11},
booktitle = {Tagungsband 7. E.I.S.-Workshop},
note = {7. E.I.S.-Workshop, Chemnitz, 7.-8. November 1995} }

[BibTeX]
U. Witkowski, D. Schröder

Numerical and analytical modelling of head resistances of diffused resistors

In Tagungsband "Proceedings of the 6th International Conference on Simulation of Semiconductor Devices and Processes (SISDEP '95)", Verlag Springer Verlag (Wien), 1995, p. 155, Herausgeber Ryssel, Pichler
Erlangen, 6.-8. Sept. 1995

Abstract:
Head resistances of diffused resistors are investigated by means of numerical device simulation. Outgoing from an understanding of the current flow pattern, an analytical model for the calculation of the head resistance from known geometric and technological parameters is developed. The results of the simulations and the modelling are verified by comparison with experimental data.

BibTeX:
@inproceedings{resistor:1995,
author = {U. Witkowski and D. Schr{\"o}der},
title = {{N}umerical and analytical modelling of head resistances of diffused resistors},
year = {1995},
month = {09},
booktitle = {Proceedings of the 6th International Conference on Simulation of Semiconductor Devices and Processes (SISDEP '95)},
address = {Wien},
editor = {Ryssel, Pichler},
note = {Erlangen, 6.-8. Sept. 1995},
pages = {155},
publisher = {Springer Verlag} }

[Abstract] [BibTeX]
U. Witkowski, D. Schröder

Simulation of the forward behaviour of hybrid Schottky-/pn- diodes

In Tagungsband "Proceedings of the 6th International Conference on Simulation of Semiconductor Devices and Processes (SISDEP '95)", Verlag Springer Verlag (Wien), 1995, p. 356, Herausgeber Ryssel, Pichler
Erlangen, 6-8 Sept. 1995

Abstract:
Device simulations of a hybrid diode - an integrated combination of a Schottky diode and a pn-diode - are presented. It is shown that under low forward bias the device acts like a Schottky diode, while under strong forward bias the behaviour turns into that of a pn-diode. Geometric variations allow to make a trade-off between the small Schottky diode forward voltage drop and the low on-resistance of a pn-diode.

BibTeX:
@inproceedings{Schottky:1995,
author = {U. Witkowski and D. Schr{\"o}der},
title = {{S}imulation of the forward behaviour of hybrid {S}chottky-/pn- diodes},
year = {1995},
month = {09},
booktitle = {Proceedings of the 6th International Conference on Simulation of Semiconductor Devices and Processes (SISDEP '95)},
address = {Wien},
editor = {Ryssel, Pichler},
note = {Erlangen, 6-8 Sept. 1995},
pages = {356},
publisher = {Springer Verlag} }

[Abstract] [BibTeX]
R. Paul

Digitale Grundschaltungen, Beitrag zum "Handbuch der Schaltungstechnik"

Buch, erschienen bei Teubner Verlag (Stuttgart), 1995

Abstract:

BibTeX:
@book{Digitale_Grundschaltungen,
author = {R. Paul},
title = {{D}igitale {G}rundschaltungen, {B}eitrag zum "{H}andbuch der {S}chaltungstechnik"},
year = {1995},
address = {Stuttgart},
publisher = {Teubner Verlag} }

[BibTeX]
R. Paul

Elektrotechnik und Elektronik für Informatiker, Band 2, Grundgebiete der Elektronik

Buch, erschienen bei Teubner Verlag (Stuttgart), 1995

Abstract:

BibTeX:
@book{Grundgebiete:1995,
author = {R. Paul},
title = {{E}lektrotechnik und {E}lektronik f{\"u}r {I}nformatiker, {B}and 2, {G}rundgebiete der {E}lektronik},
year = {1995},
address = {Stuttgart},
publisher = {Teubner Verlag} }

[BibTeX]
R. Paul

Grundschaltungen der Analogtechnik, Beitrag zum "Handbuch der Schaltungstechnik"

Buch, erschienen bei Teubner Verlag (Stuttgart), 1995

Abstract:

BibTeX:
@book{Handbuch_Schaltungstechnik:1995,
author = {R. Paul},
title = {{G}rundschaltungen der {A}nalogtechnik, {B}eitrag zum "{H}andbuch der {S}chaltungstechnik"},
year = {1995},
address = {Stuttgart},
publisher = {Teubner Verlag} }

[BibTeX]

top

1994

M. Brandstetter

From the Library Cell to the Produceable Design

In Tagungsband "Proceedings of the Eurochip Workshop 1994", 1994, p. 449
Dresden, 17.-19. Okt. 1994

Abstract:

BibTeX:
@inproceedings{Library_Cell:1994,
author = {M. Brandstetter},
title = {{F}rom the {L}ibrary {C}ell to the {P}roduceable {D}esign},
year = {1994},
month = {10},
booktitle = {Proceedings of the Eurochip Workshop 1994},
note = {Dresden, 17.-19. Okt. 1994},
pages = {449} }

[BibTeX]
D. Schröder, T. Ostermann, O. Kalz

Non-ideal contacts - Schottky diode soft-breakdown and hybrid diode with contact over pn-junction

In Tagungsband "Proceedings of the 5th International Workshop on Numerical Modelling of Processes and Devices for Integrated Circuits (NUPAD V)", Verlag IEEE, 1994, p. 75
Honolulu, Hawaii, 5.-6. Juni 1994

Abstract:
We applied our model of non-ideal metal-semiconductor contacts to contacts on material of various low and high dopings and on pn-junctions. Respective simulation results are presented in the paper. First, the apparent barrier lowering, which is due to tunneling, is shown as a function of doping and contact voltage drop. The soft breakdown of a Schottky diode under reverse bias is simulated. Finally we investigate how the potential in a hybrid diode is affected where the pn-junction is covered by a metal contact.

BibTeX:
@inproceedings{contacts:1994,
author = {D. Schr{\"o}der and T. Ostermann and O. Kalz},
title = {{N}on-ideal contacts - {S}chottky diode soft-breakdown and hybrid diode with contact over pn-junction},
year = {1994},
month = {06},
booktitle = {Proceedings of the 5th International Workshop on Numerical Modelling of Processes and Devices for Integrated Circuits (NUPAD V)},
note = {Honolulu, Hawaii, 5.-6. Juni 1994},
pages = {75},
publisher = {IEEE} }

[Abstract] [BibTeX]
D. Schröder, T. Ostermann, O. Kalz

Comparison of transport models for the simulation of degenerate semiconductors

Artikel in "Semiconductor Science and Technology", vol. 9, p. 364, 1994

Abstract:
A form of the transport equations for degenerate semiconductors is presented which accounts for degeneracy by introducing an effective potential in the drift term. Thus the formulation is particularly suited for implementation into existing drift-diffusion device simulators. The individual terms of the effective potential are discussed, and it is shown that a simplified formulations is justified in the case where the degenerate regions are charge neutral.

BibTeX:
@article{semiconductors:1994,
author = {D. Schr{\"o}der and T. Ostermann and O. Kalz},
title = {{C}omparison of transport models for the simulation of degenerate semiconductors},
year = {1994},
journal = {Semiconductor Science and Technology},
pages = {364},
volume = {9} }

[Abstract] [BibTeX]
R. Paul

Elektrotechnik und Elektronik für Informatiker, Band 1, Grundgbegriffe der Elektrotechnik

Buch, erschienen bei Teubner Verlag (Stuttgart), 1994

Abstract:

BibTeX:
@book{Grundbegriffe:1994,
author = {R. Paul},
title = {{E}lektrotechnik und {E}lektronik f{\"u}r {I}nformatiker, {B}and 1, {G}rundgbegriffe der {E}lektrotechnik},
year = {1994},
address = {Stuttgart},
publisher = {Teubner Verlag} }

[BibTeX]
R. Paul

Grundlagen Elektrotechnik 1 (Netzwerke), 3. Auflage

Buch, erschienen bei Springer Verlag (Berlin), 1994

Abstract:

BibTeX:
@book{Elektrotechnik:1994,
author = {R. Paul},
title = {{G}rundlagen {E}lektrotechnik 1 ({N}etzwerke), 3. {A}uflage},
year = {1994},
address = {Berlin},
publisher = {Springer Verlag} }

[BibTeX]
D. Schroeder

Modelling of interface carrier transport for device simulation

Buch, erschienen bei Springer, 1994

Abstract:
The book contains a comprehensive review of the physics, modelling and simulation of electron transport at interfaces in semiconductor devices. Particular emphasis is put on the consistent derivation of interface or boundary conditions for semiconductor device simulation. It combines a review of existing interface charge transport models with original developments. A unified representation of charge transport at semiconductor interfaces is introduced. Models for the most important interfaces are derived, classified within the unique modelling framework, and discussed in the context of device simulation. Discretization methods for numerical solution techniques are presented.

The book is of interest with respect to a wide range of electronic engineering activities, as process design, device design, process characterization, research in microelectronics, or device simulator development. It is also useful for students and lectures in courses of electronic engineering, and it supplements the library of technically oriented solid-state physicists. It originated from lecturers the author held in recent years for students of electrical engineering at the Technical University of Hamburg-Harburg, Germany.

BibTeX:
@book{Schroeder:1994,
author = {D. Schroeder},
title = {{M}odelling of interface carrier transport for device simulation},
year = {1994},
publisher = {Springer} }

[Abstract] [BibTeX] [DOI]
R. Paul

MOS-Feldeffekttransistoren

Buch, erschienen bei Springer Verlag (Berlin), 1994

Abstract:

BibTeX:
@book{MOSFET:1994,
author = {R. Paul},
title = {{M}{O}{S}-{F}eldeffekttransistoren},
year = {1994},
address = {Berlin},
publisher = {Springer Verlag} }

[BibTeX]

top

1993

D. Schröder, T. Ostermann, O. Kalz

Nonlinear contact resistance and inhomogeneous current distribution at ohmic contacts

In Tagungsband "Proceedings of the 5th International Conference on Simulation of Semiconductor Devices and Processes (SISDEP '93)", Verlag Springer Verlag (Wien), 1993, p. 445, Herausgeber Selberherr, Stippel, Strasser
Wien, 7.-9. Sept. 1993

Abstract:
Results of simulations are presented that make use of a recently proposed model for non-ideal ohmic contacts. The model considers both tunneling and thermionic emission currents across the contact. The nonlinearity of the contact resistance is discussed. The two-dimensional current distribution under the contact arising from doping variations is investigated. It is shown that slight doping variations can result in strong current inhomogenities.

BibTeX:
@inproceedings{NonlinContactRes:1993,
author = {D. Schr{\"o}der and T. Ostermann and O. Kalz},
title = {{N}onlinear contact resistance and inhomogeneous current distribution at ohmic contacts},
year = {1993},
month = {09},
booktitle = {Proceedings of the 5th International Conference on Simulation of Semiconductor Devices and Processes (SISDEP '93)},
address = {Wien},
editor = {Selberherr, Stippel, Strasser},
note = {Wien, 7.-9. Sept. 1993},
pages = {445},
publisher = {Springer Verlag} }

[Abstract] [BibTeX]
O. Kalz, D. Schröder

PARDESIM - A parallel device simulator on a transputer based MIMD-machine

In Tagungsband "Proceedings of the 5th International Conference on Simulation of Semiconductor Devices and Processes (SISDEP '93)", Verlag Springer Verlag (Wien), 1993, p. 245, Herausgeber Selberherr, Stippel, Strasser
Wien, 7.-9. Sept. 1993

Abstract:
In this paper we present a parallel 3D device simulator on a MIMD-machine. We havei nvestigated the efficiency of a parallel implementation, especially for the fine-grained parallelized iterative linear solvers like ILU-BCG. As a result we have found that an efficient employment of some 10 processors is possible on a MIMD-computer with the same convergence behaviour as on an adequate large sequential computer.

BibTeX:
@inproceedings{PARDESIM:1993,
author = {O. Kalz and D. Schr{\"o}der},
title = {{P}{A}{R}{D}{E}{S}{I}{M} - {A} parallel device simulator on a transputer based {M}{I}{M}{D}-machine},
year = {1993},
month = {09},
booktitle = {Proceedings of the 5th International Conference on Simulation of Semiconductor Devices and Processes (SISDEP '93)},
address = {Wien},
editor = {Selberherr, Stippel, Strasser},
note = {Wien, 7.-9. Sept. 1993},
pages = {245},
publisher = {Springer Verlag} }

[Abstract] [BibTeX]
A. Bredenfeld, O. Schettler, M. Brandstetter, D. Schröder

Integration of EDA and TCAD tools using a flexible design data schema

Buch, erschienen bei GMD (St. Augustin), vol. 765, Serie "Arbeitspapiere der GMD", 1993

Abstract:
In this paper we present a prototype design environment utilizing a schema independent programming interface combined with a common design data schema to tightly integrate design tools form the domains Electronic Design Automation (EDA) and Technology CAD (TCAD). The advantages gained from the insulation of design data manipulation and design data presentation on a fine-grain level as well as the impact on the tool integration process are discussed. The common design data schema enables interoperability of design tools from the EDA and TCAD domains.

BibTeX:
@book{TCAD-Tools:1993,
author = {A. Bredenfeld and O. Schettler and M. Brandstetter and D. Schr{\"o}der},
title = {{I}ntegration of {E}{D}{A} and {T}{C}{A}{D} tools using a flexible design data schema},
year = {1993},
address = {St. Augustin},
publisher = {GMD},
series = {Arbeitspapiere der GMD},
volume = {765} }

[Abstract] [BibTeX]

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1992

D. Schröder

A boundary condition for the Poisson equation at non-ideal metal-semiconductor contacts

In Tagungsband "Proceedings of the 8th International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits (NASECODE VIII)", 1992, p. 105
Vienna, Austria, 18.-22. Mai 1992

Abstract:
A boundary condition for the Poisson equation at non-ideal contacts is presented, taking both thermionic emission and tunneling into account. The model enables simulations of devices with non-ideal contacts that cannot be described properly by the usual boundary conditions. It is demonstrated that the condition yields the commonly used Schottky and ohmic contact boundary conditions in the limits of low resp. high doping.

BibTeX:
@inproceedings{Poisson_equation:1992,
author = {D. Schr{\"o}der},
title = {{A} boundary condition for the {P}oisson equation at non-ideal metal-semiconductor contacts},
year = {1992},
month = {05},
booktitle = {Proceedings of the 8th International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits (NASECODE VIII)},
note = {Vienna, Austria, 18.-22. Mai 1992},
pages = {105} }

[Abstract] [BibTeX]
W. Drangmeister, D. Schröder

Device model parameter extraction within a TCAD/EDA framework: automation and integration issues

In Tagungsband "Proceedings of the 8th International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits (NASECODE VIII)", 1992, p. 105
Vienna, Austria, 18.-22. Mai 1992

Abstract:
The ever decreasing device dimensions of integrated circuits introduce the fact that the stochastical nature of a fabrication process is gaining more and more influence on circuit performance. It becomes increasingly necessary tointegrate technology CAD tools -TCAD tools- into circuit design system [1]. Moreover, for an automated analog design the access to tools of the process/device level is indispensible.

Within an EDA/TCAD design environment - (EDA: Electronic Design Automation) - a parameter extraction tool represents the link between conventional circuit design systems and technology CAD tools. Two problems have to be addressed to the end: Integration of the extraction tool into the design framework and complete automation of the extraction process. The paper illustrates both integration and automation issues using the MOPEXX (MOdel Parameter EXtraction controlled by an eXpert system) parameter extractor as a vehicle.

BibTeX:
@inproceedings{parameter_extraction:1992,
author = {W. Drangmeister and D. Schr{\"o}der},
title = {{D}evice model parameter extraction within a {T}{C}{A}{D}/{E}{D}{A} framework: automation and integration issues},
year = {1992},
month = {05},
booktitle = {Proceedings of the 8th International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits (NASECODE VIII)},
note = {Vienna, Austria, 18.-22. Mai 1992},
pages = {105} }

[Abstract] [BibTeX]
D. Boning, G. Chin, R. Cottle, W. Dietrich, S. Duvall, M. Giles, R. Harris, M. Karasick, N. Khalil, M. Law, M.J. McLennan, P.K. Mozumder, L. Nackman, S. Nassif, V.T. Rajan, D. Schröder, R. Tremain, D.M.H. Walker, R. Wang, A. Wong

Developing and integrating TCAD applications with the Semiconductor Wafer Representation

In Tagungsband "Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD IV)", Verlag IEEE, 1992, p. 199
Seattle, USA, 31. Mai - 1. Juni 1992

Abstract:
This paper describes the Semiconductor Wafer Representation (SWR) for representing the wafer state during process and device simulation. The goal of the SWR is to provide a server that supplies many of the functions needed for developing and integrating technology CAD (TCAD) applications, in order to greatly reduce tool integration and development time. Under the auspices of the CAD Framework Initiative, the Technology CAD Framework Group, a working group of corporate, vendor, and university TCAD developers have completed the architecture and a C++ programming interface for a SWR draft standard. A prototype has been developed and used both to integrate existing TCAD tools and to develop several simple new tools.

BibTeX:
@inproceedings{Wafer_representation:1992,
author = {D. Boning and G. Chin and R. Cottle and W. Dietrich and S. Duvall and M. Giles and R. Harris and M. Karasick and N. Khalil and M. Law and M.J. McLennan and P.K. Mozumder and L. Nackman and S. Nassif and V.T. Rajan and D. Schr{\"o}der and R. Tremain and D.M.H. Walker and R. Wang and A. Wong},
title = {{D}eveloping and integrating {T}{C}{A}{D} applications with the {S}emiconductor {W}afer {R}epresentation},
year = {1992},
month = {05},
booktitle = {Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD IV)},
note = {Seattle, USA, 31. Mai - 1. Juni 1992},
pages = {199},
publisher = {IEEE} }

[Abstract] [BibTeX]
J. Blödel, M. Brandstetter, P. Conradi, W. Drangmeister, R. Hartenstein, D. Schröder

An information model describing the exchange of IC technology data

In Tagungsband "Proceedings of the 3rd International Workshop on Electronic Design Automation Frameworks (EDAF '92)", Verlag Elsevier, 1992, p. 9
Bad Lippspringe (Germany), 23.-25. März 1992, Elsevier 1992

Abstract:
Traditionally, Electronic Design Automation (EDA) and CAD for the Development of IC-technologies (TCAD) are two separate domains. This paper presents an Information Model describing the link between EDA and TCAD. On the basis of this Information Model it is possible to investigate the integration of EDA and TCAD tools in one common Framework. Results are described which have been achieved by the development of a prototype which integrates tools from both domains.

BibTeX:
@inproceedings{model_describing:1992,
author = {J. Bl{\"o}del and M. Brandstetter and P. Conradi and W. Drangmeister and R. Hartenstein and D. Schr{\"o}der},
title = {{A}n information model describing the exchange of {I}{C} technology data},
year = {1992},
month = {03},
booktitle = {Proceedings of the 3rd International Workshop on Electronic Design Automation Frameworks (EDAF '92)},
note = {Bad Lippspringe (Germany), 23.-25. M{\"a}rz 1992, Elsevier 1992},
pages = {9},
publisher = {Elsevier} }

[Abstract] [BibTeX]
D. Schröder, D. Ventura, A. Gnudi, G. Baccarani

Boundary conditions for spherical harmonics expansion of Boltzmann equation

Artikel in "Electronics Letters", vol. 28, p. 995, 1992

Abstract:
A cost effective solution of the Boltzmann equation can be obtained by a spherical harmonics expansion. The Letter introduces improved boundary conditions which account for the fact that the electrons absorbed by a contact may be strongly heated. It is shown that simulations with the new boundary conditions lead to improved results compared to the equilibrium boundary conditions used previously.

BibTeX:
@article{sperical_expansion:1992,
author = {D. Schr{\"o}der and D. Ventura and A. Gnudi and G. Baccarani},
title = {{B}oundary conditions for spherical harmonics expansion of {B}oltzmann equation},
year = {1992},
journal = {Electronics Letters},
pages = {995},
volume = {28} }

[Abstract] [BibTeX]
D. Despres, W. Schellin, W. Jasnoch, F. Diniyarian, A. Bredenfeld, S. Heymann, O. Schettler, U. Hunzelmann, M. Brandstetter, D. Schröder, J. Blödel, K.-H. Schmidt, J. Pfeifer

The DASSY Prototype

Buch, erschienen bei GMD (St. Augustin), 1992

Abstract:
This paper presents the prototype implemented within the DASSY project (DASSY = Data Transfer and Interfaces for Open, Integrated VLSI Design Systems). The goal of the joint project DASSY was the development of a standard interface between open, integrated VLSI design systems and arbitrary tools. The interface has to be largely independent of the underlying data handling systems and should be oriented towards the requirements of existing standard formats in the VLSI design domain. The purpose of the DASSY prototype is to demonstrate by several implementations that all of the goals are attainable. The goal is to build a demonstration prototype in which the design tools cooperate by using the common design data representation provided by the common schema. At the start of the DASSY project, design tools of the project partners were analysed and logical links between the different design data domains were exposed. The result of this analysis are employed not only to integrate design tools in the environment but to use the detected links to construct an integrated, interacting design environment.

BibTeX:
@book{DASSY:1992,
author = {D. Despres and W. Schellin and W. Jasnoch and F. Diniyarian and A. Bredenfeld and S. Heymann and O. Schettler and U. Hunzelmann and M. Brandstetter and D. Schr{\"o}der and J. Bl{\"o}del and K.-H. Schmidt and J. Pfeifer},
title = {{T}he {D}{A}{S}{S}{Y} {P}rototype},
year = {1992},
address = {St. Augustin},
publisher = {GMD} }

[Abstract] [BibTeX]
D. Schröder

The inflow moments method for the description of electron transport at material interfaces

Artikel in "Journal of Applied Physics", vol. 72, p. 964, 1992

Abstract:
This paper introduces the inflow moments method as a general procedure for the derivation of interface or boundary conditions for advanced models of carrier transport in semiconductor devices. It is based on a general interface condition for the Boltzmann equation accounting for particle and energy balance at material interfaces, as metal-semiconductor contacts or semiconductor heterojunctions. Interface conditions for transport models based on integrations of the Boltzmann equation are consistently derived by the corresponding integrations of the Boltzmann interface condition. The method is illustrated by a treatment of thermionic emission of hot electrons at a semiconductor heterojunction, resulting in interface conditions for the particle as well as the energy balance equation.

BibTeX:
@article{electron_transport:1992,
author = {D. Schr{\"o}der},
title = {{T}he inflow moments method for the description of electron transport at material interfaces},
year = {1992},
journal = {Journal of Applied Physics},
pages = {964},
volume = {72} }

[Abstract] [BibTeX]

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