2008

• Wjatscheslaw Galjan, Desislava Naydenova, Jakob M. Tomasik, Dietmar Schroeder and Wolfgang H. Krautschneider
  A Portable SoC-based ECG-System for 24h x 7d Operating Time
  In Tagungsband "IEEE BioCAS", 2008, p. 85-88
  Baltimore, USA, 20.-22. Nov. 2008
  Abstract:
  A portable battery powered 3-channel ECG-system is presented. This system can be operated up to 10 days by two standard AA batteries. It acquires 3 ECG signals with 16 bit resolution using a dedicated System on Chip (SoC) with an embedded DSP for power efficient data handling. The digitized data are filtered with an 80th order FIR filter and stored on a Compact Flash (CF) card that can be read out using a standard PC operating system. Combining high performance analog parts for signal acquisition and a powerful DSP on a single chip opens up innovative possibilities in reduction of system size and power consumption.
  BibTeX:
  @inproceedings{Galjan:ECG:2008,
  author = {Wjatscheslaw Galjan and Desislava Naydenova and Jakob M. Tomasik and Dietmar Schroeder and Wolfgang H. Krautschneider},
  title = {{A} {P}ortable {S}o{C}-based {E}{C}{G}-{S}ystem for 24h x 7d {O}perating {T}ime},
  year = {2008},
  month = {11},
  booktitle = {IEEE BioCAS},
  note = {Baltimore, USA, 20.-22. Nov. 2008},
  pages = {85-88} }
  [Abstract] [BibTeX]
  
  
• Jakob M. Tomasik, Kristian M. Hafkemeyer, Wjatscheslaw Galjan, Dietmar Schroeder, and Wolfgang H. Krautschneider
  A 130nm CMOS Programmable Operational Amplifier
  In Tagungsband "NORCHIP 2008", 2008
  Tallinn, Estonia, 17.-18. Nov. 2008
  Abstract:
  In this work we present a programmable 1.2 V Operational Amplifier (OpAmp) realized in a standard 130 nm CMOS technology. The OpAmp is based on a 3 V rail-to-rail input/output topology. The experimental results show the feasibility of using higher voltage topologies in conjunction with multi-threshold (multi-Vth) process options for low voltage designs. The programming range extends from a low-noise to a low-power mode. In addition, a constant-gm stage has been added to the rail-to-rail input. In low-noise mode the OpAmp has a low input thermal noise voltage of 5.1 nV/√Hz and in lowpower mode a power consumption of only 203 μW. Over the whole programming range the OpAmp maintains unity-gain stability with its phase margin varying between 58° and 62°.
  BibTeX:
  @inproceedings{Tomasik:OpAmp:2008,
  author = {Jakob M. Tomasik and Kristian M. Hafkemeyer and Wjatscheslaw Galjan and Dietmar Schroeder and and Wolfgang H. Krautschneider},
  title = {{A} 130nm {C}{M}{O}{S} {P}rogrammable {O}perational {A}mplifier},
  year = {2008},
  month = {11},
  booktitle = {NORCHIP 2008},
  note = {Tallinn, Estonia, 17.-18. Nov. 2008} }
  [Abstract] [BibTeX]
  
  
• Nashwa Abo Elneel, Erkan Aksoy, and Dietmar Schroeder
  A Power-Adaptable Entropy-Coding A/D Converter
  In Tagungsband "NORCHIP 2008", 2008
  Tallinn, Estonia, 17.-18. Nov. 2008
  Abstract:
  We report on a redesigned entropy-coding analog/digital converter (ADC) that combines analog/digital conversion and entropy-coding for integrated data compression and low-power operation. The new version has an increased flexibility of operation in terms of adaptable resolution, conversion rate and input signal statistics. This feature allows to adaptively react to changes of the situation and to put the converter in each case into the optimum configuration. A comprehensive power model of the converter is presented that reflects precisely the power consumption determined from experiments. The model is very useful for optimizing the converter configuration in the node of a wireless sensor network for specific situations. A possible application is demonstrated.
  BibTeX:
  @inproceedings{na:ECOC4:2008,
  author = {Nashwa Abo Elneel and Erkan Aksoy and and Dietmar Schroeder},
  title = {{A} {P}ower-{A}daptable {E}ntropy-{C}oding {A}/{D} {C}onverter},
  year = {2008},
  month = {11},
  booktitle = {NORCHIP 2008},
  note = {Tallinn, Estonia, 17.-18. Nov. 2008} }
  [Abstract] [BibTeX]
  
  
• Kristian M. Hafkemeyer, Arthur Schott, Paola Vega-Castillo, and Wolfgang H. Krautschneider
  Analog Circuit Calibration with Single Poly Non-Volatile Memories
  In Tagungsband "NORCHIP 2008", 2008
  Tallinn, Estonia, 17.-18. Nov. 2008
  Abstract:
  A single poly non-volatile memory module for analog circuit calibration fabricated in a standard 350 nm CMOS process is presented. This module performs the read, program and verify operations for non-volatile storage applications. This circuitry can be used, e.g. for storing data to individually adjust sensitive device parameters of biomedical analog front ends to meet precisely the target specifications. The module can be embedded in analog or mixed signal chips based on 350 nm CMOS technology.
  BibTeX:
  @inproceedings{Hafkemeyer:SPNVM:2008,
  author = {Kristian M. Hafkemeyer and Arthur Schott and Paola Vega-Castillo and and Wolfgang H. Krautschneider},
  title = {{A}nalog {C}ircuit {C}alibration with {S}ingle {P}oly {N}on-{V}olatile {M}emories},
  year = {2008},
  month = {11},
  booktitle = {NORCHIP 2008},
  note = {Tallinn, Estonia, 17.-18. Nov. 2008} }
  [Abstract] [BibTeX]
  
  
• Harish Balasubramaniam, Wjatscheslaw Galjan and Wolfgang H. Krautschneider
  A Configurable Multi-Mode Dual Slope ADC in 130nm CMOS for Biomedical Signal Acquisition
  In Tagungsband "ProRISC2008 Workshop", 2008
  ProRISC 2008
  Abstract:
  A configurable multi mode dual slope ADC for acquisition of biomedical signals has been implemented in a 1.2Volt/ 130nm CMOS technology. Configurability of the ADC in terms of speed, resolution and accuracy make this ADC adaptable for multiple applications. The ADC has eight configurations with a highest resolution of 13 bits at 38.3kS/s and highest performance of 72.56kS/s at 11 bit resolution. The reconfigurability is achieved by use of an integrated resistor array which is set externally. Proper matching techniques and low noise design allow the ADC to have accurate detection of input signal voltages as small as 25 μV without any noise and offset reduction techniques. At a supply voltage of 1.2V the ADC can detect signals between 200mV and 1V and frequencies of up to 35 kHz nyquist rate.
  BibTeX:
  @inproceedings{Balasubramaniam:ADC:2008,
  author = {Harish Balasubramaniam and Wjatscheslaw Galjan and Wolfgang H. Krautschneider},
  title = {{A} {C}onfigurable {M}ulti-{M}ode {D}ual {S}lope {A}{D}{C} in 130nm {C}{M}{O}{S} for {B}iomedical {S}ignal {A}cquisition},
  year = {2008},
  month = {11},
  booktitle = {ProRISC2008 Workshop},
  note = {ProRISC 2008} }
  [Abstract] [BibTeX]
  
  
• Lait Abu-Saleh, Jakob M. Tomasik, Wjatscheslaw Galjan, Wolfgang H. Krautschneider
  A SoC Based Mobile EEG Signal Acquisition System Using Multi-Sensor-Recording to Reduce Noise and Artifacts
  In Tagungsband "ProRISC2008 Workshop", 2008, p. 291-294
  Veldhoven, The Netherlands, 27.-28. Nov. 2008
  Abstract:
  Two methods are presented to reduce the effect of electrode artifacts and increase the quality of Electroencephalogram (EEG) signals. A cross-correlation method is used to reduce electrode artifacts and an autocorrelation method applies weights to the EEG input signals according to the noise content of these signals. The EEG data acquisition is achieved using a multisensor-recording technique. The methods were tested and verified using a mobile EEG signal acquisition system with a biomedical signal acquisition System on Chip (SoC). The results show an improvement in signal quality in comparison to the conventional acquisition of EEG signals.
  BibTeX:
  @inproceedings{AbuSaleh:EEG:2008,
  author = {Lait Abu-Saleh and Jakob M. Tomasik and Wjatscheslaw Galjan and Wolfgang H. Krautschneider},
  title = {{A} {S}o{C} {B}ased {M}obile {E}{E}{G} {S}ignal {A}cquisition {S}ystem {U}sing {M}ulti-{S}ensor-{R}ecording to {R}educe {N}oise and {A}rtifacts},
  year = {2008},
  month = {11},
  booktitle = {ProRISC2008 Workshop},
  note = {Veldhoven, The Netherlands, 27.-28. Nov. 2008},
  pages = {291-294} }
  [Abstract] [BibTeX]
  
  
• Nashwa Abo Elneel, Fabian Wagner, Dietmar Schroeder, and Wolfgang H. Krautschneider
  An Approach for an Efficient Transition from System-on-Chip to System-in-Package
  In Tagungsband "SAFE2008 Workshop", 2008
  SAFE2008
  Abstract:
  An approach for an efficient transition from System-on-Chip (SoC) to System-in-Package (SiP) for biomedical signal acquisition is presented. An effective work flow has been developed for the SoC-to-SiP transition and functional block separation. Block redesign for reduced interconnects has been realized. Finally, by an optimized floorplanning and die stacking for the SiP blocks an overall area reduction by a factor of 2 compared to the SoC has been achieved.
  BibTeX:
  @inproceedings{na:SoC-to-SiP:2008,
  author = {Nashwa Abo Elneel and Fabian Wagner and Dietmar Schroeder and and Wolfgang H. Krautschneider},
  title = {{A}n {A}pproach for an {E}fficient {T}ransition from {S}ystem-on-{C}hip to {S}ystem-in-{P}ackage},
  year = {2008},
  month = {11},
  booktitle = {SAFE2008 Workshop},
  note = {SAFE2008} }
  [Abstract] [BibTeX]
  
  
• Müller, Claas and Erdler, Gilbert and Kuhl, Matthias and Manoli, Yiannos and GmbH, Micronas
  Electric voltage supply
  oct 2008
  EP Patent App. 20,080,018,466
  Abstract:
  
  BibTeX:
  @misc{muller2008electric,
  author = {M{\"u}ller and Claas and Erdler and Gilbert and Kuhl and Matthias and Manoli and Yiannos and GmbH and Micronas},
  title = {{E}lectric voltage supply},
  year = {2008},
  month = {10},
  note = {EP Patent App. 20,080,018,466} }
  [BibTeX]
  
  
• C. Ucurum, H. Goebel, F.A. Yildirim, W. Bauhofer, and W. Krautschneider
  Hole trap related hysteresis in pentacene field-effect transistors
  Artikel in "Journal of Applied Physics", vol. 104, p. 84501, 2008
  Abstract:
  We have investigated hysteresis in pentacene-based field-effect transistors with SiO2 as gate dielectric. A clear hysteresis behavior in tranfer and output characteristics is reported. Measurements show that the observed hysteresis is due to hole trapping in the pentacene film. Long time constants of the trapping/detrapping mechanisms are demonstrated through transient measurements. An initialization routine to be performed prior to measurements is proposed to enable reproducible and reliable measurements on pentacene transistors.
  BibTeX:
  @article{Krautschneider:trap:2008,
  author = {C. Ucurum and H. Goebel and F.A. Yildirim and W. Bauhofer and and W. Krautschneider},
  title = {{H}ole trap related hysteresis in pentacene field-effect transistors},
  year = {2008},
  month = {10},
  journal = {Journal of Applied Physics},
  pages = {84501},
  volume = {104} }
  [Abstract] [BibTeX]
  
  
• Sebastian Georgi, Christoph Weyer, Martin Stemick, Christian Renner, Felix Hackbarth, Ulf Pilz, Jens Eichmann, Tobias Pilsak, Harald Sauff, Luis Torres, Klaus Dembowski, Fabian Wagner
  SomSeD: An Interdisciplinary Approach for Developing Wireless Sensor Networks
  In Tagungsband "7. GI/ITG KuVS Fachgespräch Drahtlose Sensornetze", 2008
  Berlin, 25.-26. September 2008
  Abstract:
  The research field "Self organized mobile Sensor and Data-networks" (SomSeD) is introduced. Its purpose is the investigation of Wireless Sensor Networks (WSN). It benefits from interdisciplinary exchange between various institutes of the Hamburg University of Technology (TUHH). Due to different design constraints (such as energy-efficiency and package size) compared to well known classical computer networks, all aspects of the development of WSNs must be reconsidered. This paper describes the advantage of having experts of various faculties both in computer science and electrical engineering in a single research field. In addition to the introduction of the participating institutes, the deployment of a WSN on the TUHH campus will be outlined.
  BibTeX:
  @inproceedings{Sebastian_Georgi:SomSeD:2008,
  author = {Sebastian Georgi and Christoph Weyer and Martin Stemick and Christian Renner and Felix Hackbarth and Ulf Pilz and Jens Eichmann and Tobias Pilsak and Harald Sauff and Luis Torres and Klaus Dembowski and Fabian Wagner},
  title = {{S}om{S}e{D}: {A}n {I}nterdisciplinary {A}pproach for {D}eveloping {W}ireless {S}ensor {N}etworks},
  year = {2008},
  month = {09},
  booktitle = {7. GI/ITG KuVS Fachgespr{\"a}ch Drahtlose Sensornetze},
  note = {Berlin, 25.-26. September 2008} }
  [Abstract] [BibTeX]
  
  
• Ronald M. Meixner and Holger H. Göbel and Haidi Qiu and Cihan Ucurum and Wilfried Klix and Roland Stenzel and Faruk Altan Yildirim and Wolfgang Bauhofer and Wolfgang H. Krautschneider
  A Physical-Based PSPICE Compact Model for Poly(3-hexylthiophene) Organic Field-Effect Transistors
  Artikel in "IEEE Transactions on Electron Devices", vol. 55, Nr. 7, p. 1776-1781, 2008
  Abstract:
  A PSPICE model for organic thin-film transistors(OFETs) employing poly(3-hexylthiophene-2,5-diyl) (P3HT) is derived. This model is based on the standard MOSFET Berkeley Short-channel IGFET Model equations, where the voltage dependences of the charge carrier mobility and the bulk conductivity are modeled by additional voltage-controlled current sources. The model requires only five additional parameters, which can be extracted from the output characteristics of the device. The model equations have been verified by device simulations, and the simulation results have been compared with measurements of P3HT OFETs.
  BibTeX:
  @article{Krautschneider:PSPICE:2008,
  author = {Ronald M. Meixner and Holger H. G{\"o}bel and Haidi Qiu and Cihan Ucurum and Wilfried Klix and Roland Stenzel and Faruk Altan Yildirim and Wolfgang Bauhofer and Wolfgang H. Krautschneider},
  title = {{A} {P}hysical-{B}ased {P}{S}{P}{I}{C}{E} {C}ompact {M}odel for {P}oly(3-hexylthiophene) {O}rganic {F}ield-{E}ffect {T}ransistors},
  year = {2008},
  month = {07},
  journal = {IEEE Transactions on Electron Devices},
  number = {7},
  pages = {1776-1781},
  volume = {55} }
  [Abstract] [BibTeX]
  
  
• A. Avellán and S. Jakschik and B. Tippelt and S. Kudelka and W. Krautschneider
  Post Hard Breakdown Conduction in MOS Capacitors With Silicon and Aluminum Oxide as Dielectric
  Artikel in "IEEE Electron Device Letters", vol. 29, Nr. 4, p. 366-368, 2008
  Abstract:
  Abstract—I–V curves as a function of voltage and temperature of MOS capacitors with silicon oxide and aluminum oxide after dielectric breakdown are presented. A different temperature behavior in accumulation is observed. The samples with aluminum oxide show an entirely positive temperature dependence, whereas the samples with silicon oxide have a crossover of the temperature dependent curves. This difference of the two sample types is attributed to the charge distribution according to the material of the breakdown spot, silicon for the case of silicon oxide, and aluminum for aluminum oxide. Thus, in the first case, a p-n junction is formed while a Schottky contact is created in the latter case. Atlas simulations and TEM analysis are presented that confirm this hypothesis. Index Terms—Current, dielectric breakdown, MOS devices.
  BibTeX:
  @article{Avellan:2008,
  author = {A. Avellán and S. Jakschik and B. Tippelt and S. Kudelka and W. Krautschneider},
  title = {{P}ost {H}ard {B}reakdown {C}onduction in {M}{O}{S} {C}apacitors {W}ith {S}ilicon and {A}luminum {O}xide as {D}ielectric},
  year = {2008},
  month = {04},
  journal = {IEEE Electron Device Letters},
  number = {4},
  pages = {366-368},
  volume = {29} }
  [Abstract] [BibTeX]
  
  
• N. Van Helleputte, J.M. Tomasik, W. Galjan, A. Mora-Sanchez, D. Schroeder, W.H. Krautschneider, R. Puers
  A flexible system-on-chip (SoC) for biomedical signal acquisition and processing
  Artikel in "Sensors and Actuators A: Physical", vol. 142, p. 361-368, 2008
  Abstract:
  In this paper, a system-on-chip (SoC) that combines multiple biomedical signal acquisition (ECG, EEG, Ep, and respiration-related signals) with on-chip digital processing is presented. The embedded flexibility of the SoC facilitates its use in a multitude of applications. Time-sharing of the operational transconductance amplifier within the analog-to-digital converters is employed in order to lower the power consumption and to save area. Built-in self-test (BIST) and autocalibration capabilities are included to enhance its reliability. The low noise analog front-end (AFE) is fully programmable to achieve the best power-noise trade-off for the application at hand. A prototype has been manufactured in 0.35 µn 3.3 V CMOS technology.
  BibTeX:
  @article{Tomasik:Actuators:2008,
  author = {N. Van Helleputte and J.M. Tomasik and W. Galjan and A. Mora-Sanchez and D. Schroeder and W.H. Krautschneider and R. Puers},
  title = {{A} flexible system-on-chip ({S}o{C}) for biomedical signal acquisition and processing},
  year = {2008},
  month = {03},
  journal = {Sensors and Actuators A: Physical},
  pages = {361-368},
  volume = {142} }
  [Abstract] [BibTeX]
  
  
• F. Wagner and Ch. Jakobi and J. Tomasik and K. Hafkemeyer and W. Galjan and D. Schroeder and W. Krautschneider
  Design and Implementation of an Automated Test Environment for Signal-Acquisition ASICs
  Artikel in "SCD Dresden", 2008
  Abstract:
  abstract: This paper presents the design of a test environment for a small number of signal acquisition ASICs. To keep the test time and cost as low as possible, an FPGA is used to translate the control commands, that are sent by a PC, to the chips. As the FPGA is flexible in programming and the sockets are removable, a very flexible test environment was developed.
  BibTeX:
  @article{Wagner:2008,
  author = {F. Wagner and Ch. Jakobi and J. Tomasik and K. Hafkemeyer and W. Galjan and D. Schroeder and W. Krautschneider},
  title = {{D}esign and {I}mplementation of an {A}utomated {T}est {E}nvironment for {S}ignal-{A}cquisition {A}{S}{I}{C}s},
  year = {2008},
  journal = {SCD Dresden} }
  [Abstract] [BibTeX]
  
  
• F. A. Yildrim, R. R. Schliewe, W. Bauhofer, R. M. Meixner, H. Goebel, W. Krautschneider
  Gate insulators and interface effects in organic thin-film transistors
  Artikel in "Elsevier ScienceDirect Organic Electronics", vol. 9, 2008
  Abstract:
  
  BibTeX:
  @article{Yildrim:Elsevier:2008,
  author = {F. A. Yildrim and R. R. Schliewe and W. Bauhofer and R. M. Meixner and H. Goebel and W. Krautschneider},
  title = {{G}ate insulators and interface effects in organic thin-film transistors},
  year = {2008},
  journal = {Elsevier ScienceDirect Organic Electronics},
  volume = {9} }
  [BibTeX]
  
  
• A. Domdey, K.M. Hafkemeyer, W.H. Krautschneider, and D. Schroeder
  Simultaneous large-scale reliability analysis of ultra-thin MOS gate dielectrics using an automated test system
  In Tagungsband "Advances in Radio Science", 2008, p. 205-207
  Kleinheubacher Berichte
  Abstract:
  This article presents an automated test system targeting the large-scale analysis of ultra-thin MOS gate dielectric degradation. The system allows for stress tests at elevated temperatures as well as supply voltages and long-term tests of thousands of MOS devices simultaneously. The aim is to build-up large and hence significant statistics about the degradation process as a function of time.
  BibTeX:
  @inproceedings{Domdey:MOS:2008,
  author = {A. Domdey and K.M. Hafkemeyer and W.H. Krautschneider and and D. Schroeder},
  title = {{S}imultaneous large-scale reliability analysis of ultra-thin {M}{O}{S} gate dielectrics using an automated test system},
  year = {2008},
  booktitle = {Advances in Radio Science},
  note = {Kleinheubacher Berichte},
  pages = {205-207} }
  [Abstract] [BibTeX]
  
  
• Gieschke, P and Nurcahyo, Y and Herrmann, M and Kuhl, M and Ruther, P and Paul, O
  Integrated stress mapping chip with 32 piezoresistive field effect transistors
  In Tagungsband "Proc. Eurosensors XXII", 2008, p. 292--295
  Abstract:
  
  BibTeX:
  @inproceedings{gieschke2008integrated,
  author = {Gieschke and P and Nurcahyo and Y and Herrmann and M and Kuhl and M and Ruther and P and Paul and O},
  title = {{I}ntegrated stress mapping chip with 32 piezoresistive field effect transistors},
  year = {2008},
  booktitle = {Proc. Eurosensors XXII},
  pages = {292--295} }
  [BibTeX]
  
  

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