2000

• R. Göttsche, A. Avellan, D. Preikszat, W. Krautschneider
  Multifunktionale Logikeinheiten als rekonfigurierbare Redundanzelemente
  In Tagungsband "Mikroelektronik für die Informationstechnik", Verlag VDE-Verlag (Berlin/Offenbach), 2000, vol. 162, Serie "ITG-Fachbericht", p. 151
  ITG-Workshop, Darmstadt, 20.-21.11.2000
  Abstract:
  Die hier vorgestellte Arbeit handelt von multifunktionalen Logikelementen, welche die für die Zukunft wichtige Funktionalität pro Flächeneinheit wesentlich erhöhen. Sie erläutert die dazugehörigen Grundlagen und stellt eine in Folge dessen entwickelte rekonfigurierbare Logikredundanz für Volladdierer/-subtrahierer und einen ersten Ansatz eines Redundanz-Controllers für deren autonomen Einsatz vor.
  BibTeX:
  @inproceedings{Logikeinheiten:2000,
  author = {R. G{\"o}ttsche and A. Avellan and D. Preikszat and W. Krautschneider},
  title = {{M}ultifunktionale {L}ogikeinheiten als rekonfigurierbare {R}edundanzelemente},
  year = {2000},
  month = {11},
  booktitle = {Mikroelektronik f{\"u}r die Informationstechnik},
  address = {Berlin/Offenbach},
  note = {ITG-Workshop, Darmstadt, 20.-21.11.2000},
  pages = {151},
  publisher = {VDE-Verlag},
  series = {ITG-Fachbericht},
  volume = {162} }
  [Abstract] [BibTeX]
  
  
• A. Zuckerstätter, T. Schloesser, F. Hofmann, B. Yuwono, A. Gschwandtner, A. Grassl, G. Innertsberger, W. Krautschneider
  DRAM cell with high signal charge and small storage capacitance using the gain concept
  In Tagungsband "Proceedings European Solid-State Device Research Conference", 2000, p. 196
  European Solid-State Device Research Conference
  Abstract:
  A new DRAM cell has been developed that features high signal charge and low aspect ratio of the storage capacitor. It can be fabricated based on a standard CMOS process, so that the cell can be integrated into existing technologies. This has been verified by processing of demonstrator cells that provide signal charges greater by factors than as of conventional DRAM cells.
  BibTeX:
  @inproceedings{DRAMCell:2000,
  author = {A. Zuckerst{\"a}tter and T. Schloesser and F. Hofmann and B. Yuwono and A. Gschwandtner and A. Grassl and G. Innertsberger and W. Krautschneider},
  title = {{D}{R}{A}{M} cell with high signal charge and small storage capacitance using the gain concept},
  year = {2000},
  month = {09},
  booktitle = {Proceedings European Solid-State Device Research Conference},
  note = {European Solid-State Device Research Conference},
  pages = {196} }
  [Abstract] [BibTeX]
  
  
• B. Sell, J. Willer, K. Pomplun, A. Sänger, D. Schumann, W. Krautschneider
  Interface characteristics between tungsten silicide electrodes and thin dielectrics
  In Tagungsband "Materials for Advanced Metallization", 2000
  MAM2000, Stresa, Italy
  Abstract:
  In today's ULSI technology there is an increasing demand in metal electrodes for storage capacitors and transistors. In this publication we present an investigation of MOS capacitor structures with CVD Tungsten Silicide (WSix) as metal electrode in conjunction with Silicon dioxide (SiO2) and oxidized Nitride (NO). Bulk Silicon and poly Silicon were used as second electrode respectively. Tungsten Silicide has been used both as gate electrode and as bottom electrode. For both cases thermalstability up to 850°C with low leakage current has been shown. Band discontinuities between SiO2 and WSix were estimated from current-voltage measurements.
  BibTeX:
  @inproceedings{Interface:2000,
  author = {B. Sell and J. Willer and K. Pomplun and A. S{\"a}nger and D. Schumann and W. Krautschneider},
  title = {{I}nterface characteristics between tungsten silicide electrodes and thin dielectrics},
  year = {2000},
  booktitle = {Materials for Advanced Metallization},
  note = {MAM2000, Stresa, Italy} }
  [Abstract] [BibTeX]
  
  

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