1997

• D. Schröder, U. Witkowski
  Simulation of semiconductor devices with non-ideal metallic contacts
  Artikel in "IEEE Transactions on Electron Devices", vol. 44, Nr. 4, p. 679, 1997
  Abstract:
  A comprehensive model of metal-semiconductor contacts that includes both thermionic emission and tunneling effects is reported. The model is particularly suited for the simulation of power devices. As an application example, simulation results of a hybrid Schottky-/pn-diode, also known as Junction Barrier Controlled Schottky Diode (JBS) or Merged pn-Schottky Diode (MPS), are presented.
  BibTeX:
  @article{Simulation:Schr{\"o}der:1997,
  author = {D. Schr{\"o}der and U. Witkowski},
  title = {{S}imulation of semiconductor devices with non-ideal metallic contacts},
  year = {1997},
  journal = {IEEE Transactions on Electron Devices},
  number = {4},
  pages = {679},
  volume = {44} }
  [Abstract] [BibTeX]
  
  
• D. Schröder
  Boundary and interface conditions of transport equations for device simulation
  In Tagungsband "Festkörperprobleme/Advances in Solid State Physics", Verlag Vieweg Verlag (Braunschweig/Wiesbaden), 1997, vol. 36, p. 266-283, Herausgeber Helbig
  Abstract:
  For the simulation of semiconductor devices, models of the physical transport processes at the interfaces between different materials (semiconductors, metals, insulators) must be available. Usually, these models are formulated as boundary or interface conditions for the transport equations. In this paper, the inflow moments method is introduced, which allows to systematically derive such models from basic principles of interface electron transport. A review of a wide variety of models for semiconductors-semiconductor-, semiconductor-metal-, and semiconductor-insulator-interfaces is presented; the models are classified according to the general framework and discussed in the context of device simulation. In addition, a new model for hot electrons at an ohmic contact is included.
  BibTeX:
  @inproceedings{Boundary:1997,
  author = {D. Schr{\"o}der},
  title = {{B}oundary and interface conditions of transport equations for device simulation},
  year = {1997},
  booktitle = {Festk{\"o}rperprobleme/Advances in Solid State Physics},
  address = {Braunschweig/Wiesbaden},
  editor = {Helbig},
  pages = {266-283},
  publisher = {Vieweg Verlag},
  volume = {36} }
  [Abstract] [BibTeX]
  
  

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