1994

• M. Brandstetter
  From the Library Cell to the Produceable Design
  In Tagungsband "Proceedings of the Eurochip Workshop 1994", 1994, p. 449
  Dresden, 17.-19. Okt. 1994
  Abstract:
  
  BibTeX:
  @inproceedings{Library_Cell:1994,
  author = {M. Brandstetter},
  title = {{F}rom the {L}ibrary {C}ell to the {P}roduceable {D}esign},
  year = {1994},
  month = {10},
  booktitle = {Proceedings of the Eurochip Workshop 1994},
  note = {Dresden, 17.-19. Okt. 1994},
  pages = {449} }
  [BibTeX]
  
  
• D. Schröder, T. Ostermann, O. Kalz
  Non-ideal contacts - Schottky diode soft-breakdown and hybrid diode with contact over pn-junction
  In Tagungsband "Proceedings of the 5th International Workshop on Numerical Modelling of Processes and Devices for Integrated Circuits (NUPAD V)", Verlag IEEE, 1994, p. 75
  Honolulu, Hawaii, 5.-6. Juni 1994
  Abstract:
  We applied our model of non-ideal metal-semiconductor contacts to contacts on material of various low and high dopings and on pn-junctions. Respective simulation results are presented in the paper. First, the apparent barrier lowering, which is due to tunneling, is shown as a function of doping and contact voltage drop. The soft breakdown of a Schottky diode under reverse bias is simulated. Finally we investigate how the potential in a hybrid diode is affected where the pn-junction is covered by a metal contact.
  BibTeX:
  @inproceedings{contacts:1994,
  author = {D. Schr{\"o}der and T. Ostermann and O. Kalz},
  title = {{N}on-ideal contacts - {S}chottky diode soft-breakdown and hybrid diode with contact over pn-junction},
  year = {1994},
  month = {06},
  booktitle = {Proceedings of the 5th International Workshop on Numerical Modelling of Processes and Devices for Integrated Circuits (NUPAD V)},
  note = {Honolulu, Hawaii, 5.-6. Juni 1994},
  pages = {75},
  publisher = {IEEE} }
  [Abstract] [BibTeX]
  
  
• D. Schröder, T. Ostermann, O. Kalz
  Comparison of transport models for the simulation of degenerate semiconductors
  Artikel in "Semiconductor Science and Technology", vol. 9, p. 364, 1994
  Abstract:
  A form of the transport equations for degenerate semiconductors is presented which accounts for degeneracy by introducing an effective potential in the drift term. Thus the formulation is particularly suited for implementation into existing drift-diffusion device simulators. The individual terms of the effective potential are discussed, and it is shown that a simplified formulations is justified in the case where the degenerate regions are charge neutral.
  BibTeX:
  @article{semiconductors:1994,
  author = {D. Schr{\"o}der and T. Ostermann and O. Kalz},
  title = {{C}omparison of transport models for the simulation of degenerate semiconductors},
  year = {1994},
  journal = {Semiconductor Science and Technology},
  pages = {364},
  volume = {9} }
  [Abstract] [BibTeX]
  
  
• R. Paul
  Elektrotechnik und Elektronik für Informatiker, Band 1, Grundgbegriffe der Elektrotechnik
  Buch, erschienen bei Teubner Verlag (Stuttgart), 1994
  Abstract:
  
  BibTeX:
  @book{Grundbegriffe:1994,
  author = {R. Paul},
  title = {{E}lektrotechnik und {E}lektronik f{\"u}r {I}nformatiker, {B}and 1, {G}rundgbegriffe der {E}lektrotechnik},
  year = {1994},
  address = {Stuttgart},
  publisher = {Teubner Verlag} }
  [BibTeX]
  
  
• R. Paul
  Grundlagen Elektrotechnik 1 (Netzwerke), 3. Auflage
  Buch, erschienen bei Springer Verlag (Berlin), 1994
  Abstract:
  
  BibTeX:
  @book{Elektrotechnik:1994,
  author = {R. Paul},
  title = {{G}rundlagen {E}lektrotechnik 1 ({N}etzwerke), 3. {A}uflage},
  year = {1994},
  address = {Berlin},
  publisher = {Springer Verlag} }
  [BibTeX]
  
  
• D. Schroeder
  Modelling of interface carrier transport for device simulation
  Buch, erschienen bei Springer, 1994
  Abstract:
  The book contains a comprehensive review of the physics, modelling and simulation of electron transport at interfaces in semiconductor devices. Particular emphasis is put on the consistent derivation of interface or boundary conditions for semiconductor device simulation. It combines a review of existing interface charge transport models with original developments. A unified representation of charge transport at semiconductor interfaces is introduced. Models for the most important interfaces are derived, classified within the unique modelling framework, and discussed in the context of device simulation. Discretization methods for numerical solution techniques are presented.
  
  The book is of interest with respect to a wide range of electronic engineering activities, as process design, device design, process characterization, research in microelectronics, or device simulator development. It is also useful for students and lectures in courses of electronic engineering, and it supplements the library of technically oriented solid-state physicists. It originated from lecturers the author held in recent years for students of electrical engineering at the Technical University of Hamburg-Harburg, Germany.
  BibTeX:
  @book{Schroeder:1994,
  author = {D. Schroeder},
  title = {{M}odelling of interface carrier transport for device simulation},
  year = {1994},
  publisher = {Springer} }
  [Abstract] [BibTeX] [DOI]
  
  
• R. Paul
  MOS-Feldeffekttransistoren
  Buch, erschienen bei Springer Verlag (Berlin), 1994
  Abstract:
  
  BibTeX:
  @book{MOSFET:1994,
  author = {R. Paul},
  title = {{M}{O}{S}-{F}eldeffekttransistoren},
  year = {1994},
  address = {Berlin},
  publisher = {Springer Verlag} }
  [BibTeX]
  
  

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