1992

• D. Schröder
  A boundary condition for the Poisson equation at non-ideal metal-semiconductor contacts
  In Tagungsband "Proceedings of the 8th International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits (NASECODE VIII)", 1992, p. 105
  Vienna, Austria, 18.-22. Mai 1992
  Abstract:
  A boundary condition for the Poisson equation at non-ideal contacts is presented, taking both thermionic emission and tunneling into account. The model enables simulations of devices with non-ideal contacts that cannot be described properly by the usual boundary conditions. It is demonstrated that the condition yields the commonly used Schottky and ohmic contact boundary conditions in the limits of low resp. high doping.
  BibTeX:
  @inproceedings{Poisson_equation:1992,
  author = {D. Schr{\"o}der},
  title = {{A} boundary condition for the {P}oisson equation at non-ideal metal-semiconductor contacts},
  year = {1992},
  month = {05},
  booktitle = {Proceedings of the 8th International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits (NASECODE VIII)},
  note = {Vienna, Austria, 18.-22. Mai 1992},
  pages = {105} }
  [Abstract] [BibTeX]
  
  
• W. Drangmeister, D. Schröder
  Device model parameter extraction within a TCAD/EDA framework: automation and integration issues
  In Tagungsband "Proceedings of the 8th International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits (NASECODE VIII)", 1992, p. 105
  Vienna, Austria, 18.-22. Mai 1992
  Abstract:
  The ever decreasing device dimensions of integrated circuits introduce the fact that the stochastical nature of a fabrication process is gaining more and more influence on circuit performance. It becomes increasingly necessary tointegrate technology CAD tools -TCAD tools- into circuit design system [1]. Moreover, for an automated analog design the access to tools of the process/device level is indispensible.
  
  Within an EDA/TCAD design environment - (EDA: Electronic Design Automation) - a parameter extraction tool represents the link between conventional circuit design systems and technology CAD tools. Two problems have to be addressed to the end: Integration of the extraction tool into the design framework and complete automation of the extraction process. The paper illustrates both integration and automation issues using the MOPEXX (MOdel Parameter EXtraction controlled by an eXpert system) parameter extractor as a vehicle.
  BibTeX:
  @inproceedings{parameter_extraction:1992,
  author = {W. Drangmeister and D. Schr{\"o}der},
  title = {{D}evice model parameter extraction within a {T}{C}{A}{D}/{E}{D}{A} framework: automation and integration issues},
  year = {1992},
  month = {05},
  booktitle = {Proceedings of the 8th International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits (NASECODE VIII)},
  note = {Vienna, Austria, 18.-22. Mai 1992},
  pages = {105} }
  [Abstract] [BibTeX]
  
  
• D. Boning, G. Chin, R. Cottle, W. Dietrich, S. Duvall, M. Giles, R. Harris, M. Karasick, N. Khalil, M. Law, M.J. McLennan, P.K. Mozumder, L. Nackman, S. Nassif, V.T. Rajan, D. Schröder, R. Tremain, D.M.H. Walker, R. Wang, A. Wong
  Developing and integrating TCAD applications with the Semiconductor Wafer Representation
  In Tagungsband "Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD IV)", Verlag IEEE, 1992, p. 199
  Seattle, USA, 31. Mai - 1. Juni 1992
  Abstract:
  This paper describes the Semiconductor Wafer Representation (SWR) for representing the wafer state during process and device simulation. The goal of the SWR is to provide a server that supplies many of the functions needed for developing and integrating technology CAD (TCAD) applications, in order to greatly reduce tool integration and development time. Under the auspices of the CAD Framework Initiative, the Technology CAD Framework Group, a working group of corporate, vendor, and university TCAD developers have completed the architecture and a C++ programming interface for a SWR draft standard. A prototype has been developed and used both to integrate existing TCAD tools and to develop several simple new tools.
  BibTeX:
  @inproceedings{Wafer_representation:1992,
  author = {D. Boning and G. Chin and R. Cottle and W. Dietrich and S. Duvall and M. Giles and R. Harris and M. Karasick and N. Khalil and M. Law and M.J. McLennan and P.K. Mozumder and L. Nackman and S. Nassif and V.T. Rajan and D. Schr{\"o}der and R. Tremain and D.M.H. Walker and R. Wang and A. Wong},
  title = {{D}eveloping and integrating {T}{C}{A}{D} applications with the {S}emiconductor {W}afer {R}epresentation},
  year = {1992},
  month = {05},
  booktitle = {Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD IV)},
  note = {Seattle, USA, 31. Mai - 1. Juni 1992},
  pages = {199},
  publisher = {IEEE} }
  [Abstract] [BibTeX]
  
  
• J. Blödel, M. Brandstetter, P. Conradi, W. Drangmeister, R. Hartenstein, D. Schröder
  An information model describing the exchange of IC technology data
  In Tagungsband "Proceedings of the 3rd International Workshop on Electronic Design Automation Frameworks (EDAF '92)", Verlag Elsevier, 1992, p. 9
  Bad Lippspringe (Germany), 23.-25. März 1992, Elsevier 1992
  Abstract:
  Traditionally, Electronic Design Automation (EDA) and CAD for the Development of IC-technologies (TCAD) are two separate domains. This paper presents an Information Model describing the link between EDA and TCAD. On the basis of this Information Model it is possible to investigate the integration of EDA and TCAD tools in one common Framework. Results are described which have been achieved by the development of a prototype which integrates tools from both domains.
  BibTeX:
  @inproceedings{model_describing:1992,
  author = {J. Bl{\"o}del and M. Brandstetter and P. Conradi and W. Drangmeister and R. Hartenstein and D. Schr{\"o}der},
  title = {{A}n information model describing the exchange of {I}{C} technology data},
  year = {1992},
  month = {03},
  booktitle = {Proceedings of the 3rd International Workshop on Electronic Design Automation Frameworks (EDAF '92)},
  note = {Bad Lippspringe (Germany), 23.-25. M{\"a}rz 1992, Elsevier 1992},
  pages = {9},
  publisher = {Elsevier} }
  [Abstract] [BibTeX]
  
  
• D. Schröder, D. Ventura, A. Gnudi, G. Baccarani
  Boundary conditions for spherical harmonics expansion of Boltzmann equation
  Artikel in "Electronics Letters", vol. 28, p. 995, 1992
  Abstract:
  A cost effective solution of the Boltzmann equation can be obtained by a spherical harmonics expansion. The Letter introduces improved boundary conditions which account for the fact that the electrons absorbed by a contact may be strongly heated. It is shown that simulations with the new boundary conditions lead to improved results compared to the equilibrium boundary conditions used previously.
  BibTeX:
  @article{sperical_expansion:1992,
  author = {D. Schr{\"o}der and D. Ventura and A. Gnudi and G. Baccarani},
  title = {{B}oundary conditions for spherical harmonics expansion of {B}oltzmann equation},
  year = {1992},
  journal = {Electronics Letters},
  pages = {995},
  volume = {28} }
  [Abstract] [BibTeX]
  
  
• D. Despres, W. Schellin, W. Jasnoch, F. Diniyarian, A. Bredenfeld, S. Heymann, O. Schettler, U. Hunzelmann, M. Brandstetter, D. Schröder, J. Blödel, K.-H. Schmidt, J. Pfeifer
  The DASSY Prototype
  Buch, erschienen bei GMD (St. Augustin), 1992
  Abstract:
  This paper presents the prototype implemented within the DASSY project (DASSY = Data Transfer and Interfaces for Open, Integrated VLSI Design Systems). The goal of the joint project DASSY was the development of a standard interface between open, integrated VLSI design systems and arbitrary tools. The interface has to be largely independent of the underlying data handling systems and should be oriented towards the requirements of existing standard formats in the VLSI design domain. The purpose of the DASSY prototype is to demonstrate by several implementations that all of the goals are attainable. The goal is to build a demonstration prototype in which the design tools cooperate by using the common design data representation provided by the common schema. At the start of the DASSY project, design tools of the project partners were analysed and logical links between the different design data domains were exposed. The result of this analysis are employed not only to integrate design tools in the environment but to use the detected links to construct an integrated, interacting design environment.
  BibTeX:
  @book{DASSY:1992,
  author = {D. Despres and W. Schellin and W. Jasnoch and F. Diniyarian and A. Bredenfeld and S. Heymann and O. Schettler and U. Hunzelmann and M. Brandstetter and D. Schr{\"o}der and J. Bl{\"o}del and K.-H. Schmidt and J. Pfeifer},
  title = {{T}he {D}{A}{S}{S}{Y} {P}rototype},
  year = {1992},
  address = {St. Augustin},
  publisher = {GMD} }
  [Abstract] [BibTeX]
  
  
• D. Schröder
  The inflow moments method for the description of electron transport at material interfaces
  Artikel in "Journal of Applied Physics", vol. 72, p. 964, 1992
  Abstract:
  This paper introduces the inflow moments method as a general procedure for the derivation of interface or boundary conditions for advanced models of carrier transport in semiconductor devices. It is based on a general interface condition for the Boltzmann equation accounting for particle and energy balance at material interfaces, as metal-semiconductor contacts or semiconductor heterojunctions. Interface conditions for transport models based on integrations of the Boltzmann equation are consistently derived by the corresponding integrations of the Boltzmann interface condition. The method is illustrated by a treatment of thermionic emission of hot electrons at a semiconductor heterojunction, resulting in interface conditions for the particle as well as the energy balance equation.
  BibTeX:
  @article{electron_transport:1992,
  author = {D. Schr{\"o}der},
  title = {{T}he inflow moments method for the description of electron transport at material interfaces},
  year = {1992},
  journal = {Journal of Applied Physics},
  pages = {964},
  volume = {72} }
  [Abstract] [BibTeX]
  
  

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